SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,IN ORDER OF (1) MAX COLLECTOR DISSIPATION 5. SILICON NPN - LOW POWER TRANSISTORS (2) fab & (3) TYPE No. {3 | 1JMAX.(2| [DERATE| T{ABS MAX RATINGS @25C) MAX. TYPICAL h PARAMETERS DWG #1 C LINE TYPE OLL. IN| |M E|BVcbo |BVceo |BVebo | Icbo BIAS COMMON EMITTER Cob |STRUC|Y200 |E 0 No. No. DISS. | fab FREE |AM Ic @MAX| Vcb le hfe hoe hie hre -TURE | s/a |AD @25C AIR |X P Veb TO200)/D E (W) | (Hz) IWC (V) | (Vv) (Vv) | {A) (A) (V)_| (A) (mhos) (Q) |X.0001 | (F) Ser. T# [FVZ369AT T75m (500M5A/1.0m [82 | 40 | 15 4.5 [100m aon sp 400 | 30mal 771 T# 4.60p)_ (DPE |u5b 2# |FK918 175m |6O0OM&A|1.0m /8J | 30 | 15 3.0 | 50m | 10nd |1.00 |3.0mm| 50 t 2.0p |DPE |u17b 3# |FV918 175m__|600M8A/1.0m {53 | 30 | 15 3.0 | 50m | 10nZ 11.0% |3.0me | 50 t 2.0pf |DPE juSb 4 [40350 180m 35 Pp R92. |B 140351 180m 35 P R92a D 6 }40352 180m 35 P R92a D 7 {2SC402A 180m | 140M5 es, 50 100m |.20uf |3.00 |1.0md! 60 Tt 2.8p EM [u37 8 |28Cc631 180m | 140M8 J) 25 | 25 6.0 |100m |.20u 3.0D |1.0mZ /350 t 4.5p EM |u37 9 |2SC632 180m__|140M8 3/40 | 40 6.0 |100m_|.20ug__|3.00 |1.0mg |350 t 4.5p EM __|u37 10 /2SC633 180m | 140M8 es] 25 725 6.0 [100m |.20u 3.00 |1.0m% | 90 ft 4.5p EM |u37 11 |28C634 180m | 140M5 #3; 40 | 40 6.0 |100m |.20ud |3.00 |1.0mZ| 90 t 4.5p EM |u37 12# |AT345 180m __|400MSA/1.2m [ss | 45 | 45 3.0 | 20m _|100n 100;2.0m_ | 35 t#a 6007! (PL iTOt04 13# [AT346 180m /400M8A/1.2m |sJ | 45 | 45 3.0 | 20m /100n 100/2.0m | 35 T#A e00fd [PL {T0104 14% |AT355 180m |400M8A/1.2m [J | 20 | 20 3.0 | 20m |100n 10Z|2.0m | 35 THA 600m |PL jTO104 15# |AT356 180m __|400M8A/1.2m_|8J | 20 | 20 3.0 | 20m |100n 10Z|2.0m_| 35 t#A 6o00r [PL |T0104 16# |AT342 180m |[550M8 [1.2m |sJ | 20 | 20 3.0 | 20m [.10ud 10Z|2.0mG|35 #TA -47p PLT@ [R103 a 17# |AT343 180m |550M8 |1.2m j&J | 20 | 20 3.0 | 20m |.10ud 10Z|2.0m | 35 #tA .47p PLt |R103 a 18 [40470 180m __{700M_ {1.1m [8 | 45 3.0 | 50m |1.0u 6.0 {1.0m |170 t! 180fs T0104 1 40471 180m |700M8 {1.1m [ss | 45 3.0 | 50m 11.0u 6.08 |1.0md | 100 tA T80f$ TO104 20 |40469 180m |800M8 |1.1m [8J | 45 3.0 | 50m |1.0u 6.0% |1.0md }170 td 190fs (@ TO104|JD 21 |2N747t 200m 1.3m_|S | 25 | 25 3.0 | 50m |100n% 11.04 | 10m 30 tA 8.0p4 u95 22, [2N748t 200m 1.3m [8S | 30 | 30 3.0 | 50m 1100nd 11.00 | 10mg] 20 TA 8.0p) ug5 23 |2N847t 200m 7.7m |8S! 40 | 25 10} 50m }.10ud 24 |2N848t 200m 7.7m_ (8S | 20 | 15 6.0 | 50m |.10ud 28 {2N1082 200m 1.5m [sS| 25 | 25 @ [2.0 | 50m |.50u 5.09 | 10mg 10 A Spf | t [TOS 26 |JAN2N1082 200m 1.4m |S} 25 | 25D |2.0 | 50m |500n [5.02 | 10mg) 10 A 5.0p4 t |TO5 27 |2N4087 200m 2.6m _|#S) 12 | 12 5.0 |100m |100n 10% |2.0me [250 A 12pA TO98 |B 28 =[2N4087A 200m 2.6m /#S| 12 | 12 5.0 [100m /[100n 10D|2.0mg [250 A 12piA @ |TO98 |B 29 |3N1272 200m 1.3m [88 | 30 | 20 20| 10m | 10n 10B/ 1.0m }2.0 A 5.0p TO72 30 |4JX16A667 200m 2.6m_|#J| 18 | 18 5.0 |100m |.50u 10G|2.0mg | 55 *A PL |R67 31 |4JX16A667/G [200m 2.6m |#J) 18 | 18 5.0 |100m |.50u 109 /2.0m [235 A PL {R67 32 |43X16A667/0 |200m 2.6m |#J) 18 | 18 5.0 [100m |.50u 10Z|2.0m% | 90 A PL |R67 33 |4JX16A667/R_|200m 2.6m J118 | 18 5.0 |100m_ |.50u 10Z!2.0m | 55 A PL {R67 34 =[4JX16A667/Y [200m 2.6m |#J} 18 | 18 5.0 [100m [.50u 10Z/2.0mG]150 A PL [R67 35 |4JX16A668 200m 2.6m {#J| 18 | 18 5.0 |100m |.50u 10Z(2.0mZ | 90 *A PL !R67 36 _|4JX16A668/G |200m 2.6m_|#J} 18 | 18 5.0 |100m_ |.50u 10B|2.0m |235 A PL {R67 37 |4JX16A668/0 |200m 2.6m |#J. 18 |] 18 5.0 |100m |.50u 10B(2.0mg} 90 A PL [R67 38 |4JX16A668/Y |200m 2.6m |#J) 18 | 18 5.0 |100m |.50u 10D/2.0m |150 A PL |R67 39 |4JX16A669 200m 2.6m_|#J| 18 | 18 5.0 [100m |.50u 109 3.omg 150 *A PL___|R67 40 [4JX16A669/G |200m 2.6m |#J! 18 | 18 5.0 [100m |.50u 10Z|2.0mG 1235 A PL |R67 41 |4JX16A669/Y |200m 2.6m i#J] 18 | 18 5.0 |100m |.50u 10B|2.0m% |150 A PL {R67 42 |4JX16B670/G_|200m 2.6m_ |#45; 18 18 5.0 |200m |.50u 4.5D |2.0m 1180 tA PE [R67 43 [4JX16B670/R |200m 2.6m |#J| 18 | 18 5.0 [200m |.50u 4.5% |2.0m%