1MBH08D-120 Molded IGBT
1200V / 8A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Equivalent Circuit Schematic
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector DC Tc=25°C IC25
current Tc=105°C IC105
1ms Tc=25°C Icp
Max. power dissipation (IGBT) PC
Max. power dissipation (FWD) PC
Operating temperature Tj
Storage temperature Tstg
Screw torque -
Rating
1200
±20
15
8
39
135
85
+150
-40 to +150
70
Unit
V
V
A
A
A
W
W
°C
°C
cm
C:Collector
E:Emitter
G:Gate
IGBT +
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Switching
Time Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
ton
tr
toff
tf
VF
trr
1.0
––20
5.5 8.5
3.5
1000
160
–60
1.2
0.6
1.5
0.5
0.16
0.11
0.30
0.50
3.0
0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, I C=8mA
VGE=15V, IC=8A
VGE=0V
VCE=10V
f=1MHz
VCC=600V, IC=8A
VGE=±15V
RG=200 ohm
(Half Bridge)
VCC=600V, IC=8A
VGE=+15V
RG=20 ohm
(Half Bridge)
IF=8A
IF=8A, VGE=-10V,
VR=200V, di/dt=100A/µs
mA
µA
V
V
pF
µs
µs
V
µs
Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance characteristics
Thermal resistance 0.92
1.47 IGBT
FWD °C/W
°C/W
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Outline drawings, mm
FWD
TO-3PL
Characteristics
1MBH08D-120 Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector-Emitter voltage : VCE (V)
Collector current : IC (A)
Collector current : IC (A)
Collector-Emitter voltage : VCE (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage : VCE (V)
Gate-Emitter voltage : VGE (V) Gate-Emitter voltage : VGE (V)
Switching time vs. Collector current
VCC=600V, RG=20, VGE=±15V, Tj=25°C Switching time vs. Collector current
VCC=600V, RG=20, VGE=±15V, Tj=125°C
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Collector current : IC (A) Collector current : IC (A)
IGBT Module
Characteristics
1MBH08D-120
Gate resistance : RG ()
Switching time vs. RG
VCC=600V, IC=8A, VGE=±15V , Tj=25°C
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Gate resistance : RG ()
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Switching time vs. RG
VCC=600V, IC=8A, VGE=±15V, Tj=125°C
Dynamic input characteristics
Tj=25°C
Collector-Emitter voltage : VCE (V)
Gate charge : Qg (nc)
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Capacitance : Cies, Coes, Cres (nF)
Collector-Emitter voltage : VCE (V)
Collector current : IC (A)
Collector-Emitter voltage : VCE (V) Gate voltage : VGE (V)
Short circuit current : ISC (A)
Gate-Emitter voltage : VGE (V)
Reverse Biased Safe Operating Area
+VGE=15V, -VGE 15V, Tj 125°C, RG 20
=
<=
<=
>Typical short circuit capability
VCC=800V, RG=20, Tj=125°C,
Short circuit time : tSC (µs)
IGBT Module
Characteristics
1MBH08D-120
Reverse recovery time vs. Forward current
VR=200V, -di/dt=100A/µsec
Reverse recovery time : trr [nsec]
Forward current : IF (A) Forward current : IF (A)
Reverse recovery current : Irr [A]
Forward Voltage vs. Forward current
Forward current : IF [A]
Forward voltage : VF (V)
Reverse recovery chracteristics vs. -di/dt
IF=8A, Tj=125°C
Reverse recovery time : trr [nsec]
-di/dt [A/µsec]
Reverse recovery current : Irr [A]
Transient thermal resistance
Reverse recovery current vs. Forward current
VR=200V, -di/dt=100A/µsec
Thermal resistance : Rth(j-c) [°C/W]
Pulse width : PW (sec)