SI-FOTODETEKTOREN, OPTISCHE SENSOREN
UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS
AND INFRARED EMITTERS
SAFETY INSTRUCTIONS
Osram Opto Semiconductor IREDs reach luminance/radiance levels approaching that of
filament lamps. Depending on the operating conditions (drive current, pulse duration, duty cycle,
optics, etc.) they may exceed the limits of class1, IEC 825.1/ EN 60825-1 *
)
considerably.
In order to minimize any risk of the damage to the human eyes, it is strongly recommended to
• use lowest possible drive level,
• use diffusing optics or diffused devices where possible,
• avoid staring into powerful emitters,
• use protective devices.
*) IEC 825.1 and EN 60825-1, resp. in the revision of July 1, 1994 lay down in class 1 extremely
low tolerance levels which are contested, in particular because they represent unexplained
contractions with other regulations and do not embrance other light sources such as
incandescent lamps, discharge lamps, etc. This may lead to changes of the tolerance levels
in the above referenced standards.
SICHERHEITSHINWEISE
Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T.
bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.
EN60825-1 je nach Betriebsbedingungen (Strom, Pulslänge, Tastverhältnis, Zusatzoptik, etc.)
erheblich überschreiten.*
)
In jedem Fall empfehlen wir zur Minimierung der Augengefährdung:
• möglichst niedrigen Betriebsstrom verwenden
• wo immer möglich diffuse Bauelemente oder - Streuscheiben einsetzen
• nicht in die Quelle schauen
• Schutzeinrichtungen verwenden.
*) IEC 825.1 bzw. EN60825-1 in der Fassung vom Juli 1994 legen für RED in der Klasse 1 sehr
niedrige Grenzwerte fest, die umstritten sind, insbesondere weil Widersprüche zu anderen
Vorschriften nicht geklärt sind und weil obige Normen andere Lichtquellen wie Glühlampen
und Entladungslampen bzw. natürliche Quellen nicht erfassen. Dies kann zu einer weiteren
Anpassung obiger Normen führen.
2
3
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
1. Foto IC für Fernsteuerung 1. Photo IC for Remote Control 11
2. Fotodetektoren in SMT 2. Photodetectors in SMT
(Oberflächenmontage) (Surface Mount Technology) 11
2.1 SMT-Transistoren 2.1 SMT-Transistors 11
2.2 SMT-Dioden 2.2 SMT-Diodes 14
2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes 14
2.2.2 SMT-PIN-Fotodioden mit Filter 2.2.2 SMT-PIN Photodiodes with Filter 14
2.2.3 SMT- Differenzdiode 2.2.3 SMT Differential Photodiode 15
3. Foto ICs 3. Photo ICs 15
3.1 Schmitt-Trigger 3.1 Schmitt-Trigger 15
3.2 Licht-Spannungswandler 3.2 Light to Voltage Converter 15
4. Fototransistoren 4. Phototransistors 16
4.1 Fototransistoren im Plastikgehäuse 4.1 Phototransistors in Plastic Package 16
4.1.1 im klaren Plastikgehäuse 4.1.1 in Clear Plastic Package 16
4.1.2 im Plastikgehäuse mit Filter für 880/950 nm IRED 4.1.2 in Plastic Package with Filter Matched for 880/950 nm IRED 16
4.2 Fototransistoren im Metallgehäuse 4.2 Phototransistors in Metal Package 17
4.3 Zeilen im klaren Plastikgehäuse bis zu 10 Transistoren 4.3 Arrays in Clear Plastic Package up to 10 Transistors 18
5. PN-Fotodioden 5. PN Photodiodes 18
5.1 im Plastikgehäuse 5.1 in Plastic Package 18
5.2 sperrstromarm 5.2 Low Reverse Current 19
6. Sehr schnelle PIN-Fotodioden 6 PIN Photodiodes
for High-Speed Applications 19
6.1 Sehr schnelle PIN-Fotodioden im Plastikgehäuse 6.1 PIN Photodiodes for High-Speed Applications in Plastic
Package 19
6.1.1 im klaren Plastikgehäuse 6.1.1 in Clear Plastic Package 19
6.1.2 im Plastikgehäuse mit Filter für 880 nm IRED 6.1.2 in Plastic Package with Filter Matched for 880 nm IREDs 20
6.1.3 im Plastikgehäuse mit Filter für 950 nm IRED 6.1.3 in Plastic Package with Filter Matched for 950 nm IREDs 21
6.2 Sehr schnelle PIN-Fotodioden 6.2 PIN Photodiodes for High-Speed Applications
im hermetisch dichten Metallgehäuse in Hermetically Sealed Metal Package 21
7. Fotodetektoren für spezielle 7. Photodetectors for Special
Anwendungen Applications 22
7.1 Blau-empfindliche Fotodiode 7.1 Blue-sensitive Photodiode 22
7.2 Fotodetektoren für den sichtbaren Bereich 7.2 Photodetectors for the Visible Range 22
7.2.1 Fotodiode für den sichtbaren Bereich (Vλ-Kurve) 7.2.1 Photodiode for the Visible Range (Vλ-Curve) 22
7.2.2 Fototransistor für den sichtbaren Bereich (Vλ-Kurve) 7.2.2 Phototransistor for the Visible Range (Vλ-Curve) 22
7.3 Großflächige PIN-Fotodiode 7.3 Large-Area PIN Photodiode 22
7.4 Zweifach-Fotodioden 7.4 Double Photodiodes 22
7.5 Ultraviolet empfindlicher Sensor 7.5 Ultraviolet Selective Sensor 23
8. Optische Sensoren 8. Optical Sensors
8.1 Gabellichtschranken 8.1 Slotted Interrupters 24
8.2 SMT-Reflexlichtschranken 8.2 SMT Reflective Sensors 25
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
4
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
1. Emitter in SMT 1. Emitters in SMT 28
2. Sehr schnelle Emitter 2. High-Speed High-Power Emitters 30
3. Emitter im Plastikgehäuse 3. Emitters in Plastic Package 31
4. Emitter im Metallgehäuse 4. Emitters in Metal Package 32
5. Miniatur-Emitter 5. Miniature Emitters 33
Lochblendenmessung Aperture measurement 34
Maßbilder Outline Drawings 35
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
5
TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN)SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS)
1. Foto IC für Fernsteuerung 1. Photo IC for Remote Control
SFH 5110 SFH 5111
2. Fotodetektoren in SMT
2.1.SMT-Transistoren
2. Photodetectors in SMT
2.1.SMT-Transistors
TOPLED®
SFH 320
SFH 320 FA
TOPLED® RG
SFH 3211
SFH 3211 FA
SIDELED®
SFH 325
SFH 325 FA
Multi TOPLED®
SFH 331 / SFH 7221 /
SFH 7225 / SFH 7226
SFH 3500
SFH 3505 SFH 3500 FA
SFH 3505 FA SFH 3400 / SFH 3401 / SFH 3410 SFH 3201
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
6
2.2.SMT-Fotodioden 2.2.SMT Photodiodes
BP 104 S / BPW 34 S BPW 34 S RG BP 104 FS / BPW 34 FS /
BPW 34 FAS BPW 34 FS RG /
BPW 34 FAS RG
SFH 2400
SFH 2400 FA SFH 2500
SFH 2500 FA SFH 2505
SFH 2505 FA KOM 2125
KOM 2125 FA
3. Foto ICs
3.1.Schmitt-Trigger
3. Photo ICs
3.1.Schmitt-Trigger
SFH 5440
SFH 5441 SFH 5140 F
SFH 5141 F SFH 5840
SFH 5841 SFH 5400
3.2.Licht-Spannungswandler 3.2.Light to Voltage Converter
SFH 5130
TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN)SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS)
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
7
4. Fototransistoren
4.1.im Plastik-Gehäuse
4. Phototransistors
4.1.in Plastic Package
SFH 309 / SFH 310
SFH 309 FA / SFH 310 FA SFH 309 P
SFH 309 PFA SFH 300 / SFH 313 / SFH 314
SFH 300 FA / SFH 313 FA /
SFH 314 FA
SFH 303
SFH 303 FA
LPT 80 A SFH 3100 F / SFH 3130 F
4.2.im Metall-Gehäuse 4.2.in Metal Package
BPY 62 / BPX 43 BPX 38 BP 103 / SFH 302
4.3.im Miniatur-Gehäuse 4.3.in Miniature Package / Arrays
SFH 305 BPX 81 BPX 83
TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN)SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS)
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
8
5. PN Fotodioden 5. PN Photodiodes
BPX 90
BPX 90 F BPW 33 BPX 63
6. Sehr schnelle PIN-Fotodioden 6. High-Speed PIN Photodiodes
BPW 34
BPW 34 F / BPW 34 FA / BP 104 F SFH 206 K SFH 229
SFH 229 FA SFH 203 / SFH 213 / SFH 214
SFH 203 FA / SFH 213 FA /
SFH 214 FA
SFH 203 P
SFH 203 PFA SFH 225 FA / SFH 235 FA SFH 205 F / SFH 205 FA SFH 204 F / SFH 204 FA
TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN)SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS)
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
9
SFH 216 BPX 65
7. Fotodetektoren für spezielle Anwendungen 7. Photodetectors for Special Applications
BPW 34 B BPW 21 / BPX 61 SFH 3410
SFH 221 BPX 48
BPX 48 F SFH 530
TYPENÜBERSICHT (SI-FOTODETEKTOREN, OPTISCHE SENSOREN)SUMMARY OF TYPES (SILICON PHOTODETECTORS, OPTICAL SENSORS)
OPTISCHE SENSOREN OPTICAL SENSORS
10
TYPENÜBERSICHT SUMMARY OF TYPES
8. Optische Sensoren
8.1.Gabellichtschranken
8. Optical Sensors
8.1.Slotted Interrupters
SFH 9300 SFH 9301 / SFH 9330 SFH 9302 SFH 9303
SFH 9304 SFH 9305 SFH 9306 SFH 9310
SFH 9340 / SFH 9341
Schmitt-Trigger SFH 9500 SFH 4110 / SFH 3100 F
8.2.SMT-Reflexlichtschranken 8.2.SMT Reflective Sensors
SFH 9201 / SFH 9202
Transistor Ausgang /
Transistor Output
SFH 9260 SFH 9240 / SFH 9241
Schmitt-Trigger
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
11
1. Foto IC für Fernsteuerung 1. Photo IC for Remote Control
TA = 25 °CTA = 25 °C
1) In Verbindung mit einer SFH 4510/4515 bei Betrieb mit IF = 500 mA wird eine Reichweite von ca. 30 m erreicht.
Together with an IRED SFH 4510/4515 under operating conditions IF = 500 mA an arrival distance of 30 m is possible.
2. Fotodetektoren in SMT 2. Photodetectors in SMT
(Oberflächenmontage) (Surface Mount Technology)
TA = 25 °CTA = 25 °C
Gehäuse
Package Typ
Type Frequenz
Frequency
f
kHz
Halbwinkel
Halfangle
ϕ
deg.
Min. Bestrahlungsstärke 1)
Min. threshold irradiance
Ee min
mW/m2
Ordering code Fig.
SFH 5110-30 30
± 50 horizontal
± 30 vertical 0.35 typ., 0.5 max.
Q62702-P5088
1
SFH 5110-33 33 Q62702-P5089
SFH 5110-36 36 Q62702-P5090
SFH 5110-38 38 Q62702-P5091
SFH 5110-40 40 Q62702-P5092
SFH 5111-30 30
± 50 horizontal
± 30 vertical 0.35 typ., 0.5 max.
Q62702-P5257
SFH 5111-33 33 Q62702-P5258
SFH 5111-36 36 Q62702-P5259
SFH 5111-38 38 Q62702-P5260
SFH 5111-40 40 Q62702-P5261
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IPCE (λ = 950 nm,
Ee = 0.1 mW/cm2,
VCE = 5 V)
µA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
2.1 SMT-Transistoren 2.1 SMT-Transistors
TOPLED
SFH 320
± 60 0.045
≥16
35 420 … 1100
– Q62702-P961
2
SFH 320-3 25 … 50 7 Q62702-P390
SFH 320-3/4 25 … 80 7/8 Q62702-P3602
SFH 320-4 40 … 80 8 Q62702-P1606
TOPLED
SFH 320 FA
± 60 0.045
≥ 16
35 740 … 1100
– Q62702-P988
SFH 320 FA-3 25 … 50 7 Q62702-P393
SFH 320 FA-3/4 25 … 80 7/8 Q62702-P3601
SFH 320 FA-4 40 … 80 8 Q62702-P1607
TOPLED RG
SFH 3211
± 60 0.045
≥ 16
35 420 … 1100 8
Q62702-P5127
3
SFH 3211-3 25 … 50 on request
SFH 3211-3/4 25 … 80 on request
SFH 3211-4 40 … 80 on request
TOPLED RG
SFH 3211 FA
± 60 0.045
≥ 16
35 740 … 1100
– on request
SFH 3211 FA-3 25 … 50 7 on request
SFH 3211 FA-3/4 25 … 80 7/8 on request
SFH 3211 FA-4 40 … 80 8 on request
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
12
SIDELED
SFH 325
± 60 0.045
≥ 16
35 420 … 1100
– Q62702-P1638
4
SFH 325-3 25 … 50 7 Q62702-P1610
SFH 325-3/4 25 … 80 7/8 Q62702-P3604
SFH 325-4 40 … 80 8 Q62702-P1611
SIDELED
SFH 325 FA
± 60 0.045
≥ 16
35 740 … 1100
– Q62702-P1639
SFH 325 FA-3 25 … 50 7 Q62702-P1614
SFH 325 FA-3/4 25 … 80 7/8 Q62702-P3603
SFH 325 FA-4 40 … 80 8 Q62702-P1615
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd Ie
mW/sr VF
VOrdering code Fig.
Multi TOPLED
SFH 331-JK
635 ± 60 4...12.5 – 2.0 at IF = 20 mA
Q62702-P1634 5
Empfänger
Detector Radiant
sensitive
area
mm2
IPCE (λ = 950
nm, Ee =
0.1 mW/cm2,
VCE = 5 V)
µA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
0.045 ≥16 35 380... 1150 7
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd Ie
mW/sr VF
VOrdering code Fig.
Multi TOPLED
SFH 7221
880 ± 60 – 4 1.5 at IF = 20 mA
Q62702-P1819 6
Empfänger
Detector Radiant
sensitive
area
mm2
IPCE (λ = 950
nm, Ee =
0.1 mW/cm2,
VCE = 5 V)
µA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
0.045 ≥16 35 380... 1150 7
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd VF
VOrdering code Fig.
Multi TOPLED
SFH 7225
591 ± 60 125 typ. 2.0 at IF = 20 mA
on request 5
Empfänger
Detector Radiant
sensitive
area
mm2
IPCE (Ev =
1000 lx
Standard
light A
VCE = 5 V)
µA
VCEO
V
Crosstalk IPCE
(IF = 20 mA,
VCE = 5 V)
µA
0.045 650 typ. 35 850 typ.
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd VF
VOrdering code Fig.
Multi TOPLED
SFH 7226
645 ± 60 70 typ. 2.0 at IF = 20 mA
on request 5
Empfänger
Detector Radiant
sensitive
area
mm2
IPCE (Ev =
1000 lx
Standard
light A
VCE = 5 V)
µA
VCEO
V
Crosstalk IPCE
(IF = 20 mA,
VCE = 5 V)
µA
0.045 650 typ. 35 850 typ.
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IPCE (λ = 950 nm,
Ee = 0.1 mW/cm2,
VCE = 5 V)
µA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
2.1 SMT-Transistoren 2.1 SMT-Transistors (cont’d)
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
13
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IPCE (λ = 950 nm,
Ee = 0.1 mW/cm2,
VCE = 5 V)
mA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
2.1 SMT-Transistoren 2.1 SMT-Transistors (cont’d)
SFH 3500
± 13 0.55
2.5 … 20.0
Ee = 0.5 mW/cm2
35 450 … 1060
– Q62702-P5031
7SFH 3500-3/4 2.5 … 8.0 14/17 Q62702-P5205
SFH 3500-5/6 6.3 … 20.0 20/24 Q62702-P5206
SFH 3505
± 13 0.55
2.5 … 20.0
35 450 … 1060
– Q62702-P5050
8SFH 3505-3/4 2.5 … 8.0 14/17 Q62702-P5207
SFH 3505-5/6 6.3 … 20.0 20/24 Q62702-P5208
SFH 3500 FA
± 13 0.55
2.5 … 20.0
35 740 … 1070
– Q62702-P5032
7SFH 3500 FA-3/4 2.5 … 8.0 14/17 Q62702-P5201
SFH 3500 FA-5/6 6.3 … 20.0 20/24 Q62702-P5202
SFH 3505 FA
± 13 0.55
2.5 … 20.0
35 740 … 1070
– Q62702-P5051
8SFH 3505 FA-3/4 2.5 … 8.0 14/17 Q62702-P5203
SFH 3505 FA-5/6 6.3 … 20.0 20/24 Q62702-P5304
SFH 3400 ± 60 0.55 0.063 … 0.32
Ee = 0.1 mW/cm2
20
70 (t < 2 min.) 460 … 1080 – Q62702-P1796 9
SFH 3400-2/3 0.1 … 0.32 24/34 Q62702-P3605
SFH 3401
(mit Basisanschluß/
with base
connection) ± 60 0.55 0.063 … 0.32 20
70 (t < 2 min.) 460 … 1080 – Q62702-P5014 10
SFH 3401-2/3 0.1 … 0.32 24/34 Q62702-P5200
SFH 3201
± 60 0.55
0.063 …0.32 20
70 (t < 2 min.) 460 … 1080
– Q62702-P5043
11
SFH 3201-2/3 0.1 … 0.32 24/34 Q62702-P5209
SMT-Transistor (Vλ - Kurve) SMT-Transistor (Vλ - Curve)
SFH 3410 ± 60 0.29 > 0.0035
EV = 20 Lx
6.3 350 … 970 – Q62702-P5160 12
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
14
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP (λ = 950 nm,
Ee = 1 mW/cm2,
VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 20 V,
RL = 50 Ω)
ns
Ordering code Fig.
2.2 SMT-Dioden 2.2 SMT-Diodes
2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes
BP 104 S ± 60 2.2 × 2.2 55 (≥ 40)
EV = 1000 lx
2 (≤ 30) 400 … 1100 10
Q62702-P1605 13
BPW 34 S
± 60 2.65 × 2.65 80 (≥ 50)
Q62702-P1602 14
BPW 34 S E9087
Reverse Gullwing Q62702-P1790 15
SFH 2400 ± 60 1 × 1 10 (> 5.5)
EV = 1000 Lx
1 (≤ 5)
VR = 20 V
400 … 1100 5 Q62702-P1794 16
SFH 2500 ± 15 1 × 1 70 (> 50)
λ = 870 nm
1 (≤ 5) 400 … 1100 5 Q62702-P5034 7
SFH 2505 ± 15 1 × 1 70 (> 50) 1 (≤ 5) 400 … 1100 5 Q62702-P5029 8
2.2.2 SMT-PIN-Fotodioden mit Filter 2.2.2 SMT-PIN Photodiodes with Filter
BP 104 FS ± 60 2.2 × 2.2 34 (≥ 25) 2 (≤ 30) 800 … 1100 10 Q62702-P1646 13
BPW 34 FS ± 60 2.65 × 2.65 50 (≥ 40) 2 (≤ 40) 800 … 1100 10 Q62702-P1604
14
BPW 34 FAS ± 60 2.65 × 2.65 50 (≥ 40)
λ = 870 nm
2 (≤ 30) 740 … 1100 10 Q62702-P463
BPW 34 FS E9087
Reverse Gullwing ± 60 2.65 × 2.65 50 (≥ 40)
λ = 950 nm
2 (≤ 30) 780 … 1100 20 Q62702-P1826 15
BPW 34 FAS E9087
Reverse Gullwing
λ = 870 nm
730 … 1100 Q62702-P1829
SFH 2400 FA ± 60 1 × 1 6.2 (≥ 3.6) 1 (≤ 5)
VR = 20 V
750 … 1100 5 Q62702-P5035 16
SFH 2500 FA ± 15 1 × 1 70 (> 50) 1 (≤ 5) 750 … 1100 5 Q62702-P1795 7
SFH 2505 FA ± 15 1 × 1 70 (> 50) 1 (≤ 5) 750 … 1100 5 Q62702-P5030 8
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
15
3. Foto ICs 3. Photo ICs
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(EV = 1000 lx,
VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 10 V,
RL = 50 Ω)
ns
Ordering code Fig.
2.2 SMT-Dioden 2.2 SMT-Diodes (cont’d)
2.2.3 SMT- Differenzdiode 2.2.3 SMT Differential Photodiode
KOM 2125
± 60 4 (diode A)
10 (diode B)
40 (≥ 30) diode A
100 (≥ 75) diode B
5 (
≤
30) diode A
10 (
≤
30) diode B
400 … 1100
13 diode A
20 diode B
Q62702-K47
17
KOM 2125 FA
26 (≥ 20)
diode A,
70 (≥ 50)
diode B
λ = 870 nm,
Ee = 1 mW/cm2
750 … 1100 Q62702-P5313
Package Type ϕ
deg.
VCC
V
Switching thres-
hold Ee
(VCC = 5 V)
mW/cm2
λ10%
nm
IO
mA
tPHL/tPLH
µs
Ordering code Fig.
3.1 Schmitt-Trigger 3.1 Schmitt-Trigger
SFH 5440
± 60 4 … 18 0.170 (<
0.320)
λ = 950 nm
400 … 1100 < 16 5 (< 15)
Q62702-P5114
18
SFH 5441 Q62702-P5115
SFH 5140 F
± 14 4 … 18 0.015 (< 0.05)
λ = 950 nm
840 … 1080 < 16 5 (< 15)
Q62702-P5112
19
SFH 5141 F Q62702-P5113
SFH 5840
± 10 4 … 18 0.01 (< 0.032)
λ = 950 nm
400 … 1100 < 16 5 (< 15)
Q62702-P5116
20
SFH 5841 Q62702-P5117
SFH 5400 ± 60 4.5 … 15 1.3
λ = 660 nm
500 … 900 – 25 … 40 0.2 Q62703-Q2275 21
Package Type ϕ
deg.
VDD
V
S (VCC = 5 V,
λ = 428 nm)
V/µW/cm2
λ10%
nm
IDD
mA
tr/tf
µs
Ordering code Fig.
3.2 Licht-Spannungswandler 3.2 Light to Voltage Converter
SFH 5130 ± 43 4.5 … 5.5 1.18 400 … 1100 1.5 (< 4.5) 50 /
70 (< 250) on request 22
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
16
4. Fototransistoren 4. Phototransistors
TA = 25 °CTA = 25 °C
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IPCE (λ = 950 nm,
Ee = 0.5 mW/cm2,
VCE = 5 V)
mA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
4.1 Fototransistoren im Plastikgehäuse 4.1 Phototransistors in Plastic Package
4.1.1 im klaren Plastikgehäuse 4.1.1 in Clear Plastic Package
T 1
SFH 309
± 12 0.045
≥ 0.4
35 380 … 1080
– Q62702-P859
23
SFH 309-3/4 0.63 … 2.0 6/7 Q62702-P3592
SFH 309-4 1.0 … 2.0 7 Q62702-P998
SFH 309-4/5 1.0 … 3.2 7/8 Q62702-P3593
SFH 309-5 1.6 … 3.2 8 Q62702-P999
SFH 309-5/6 1.6 … 5.0 8/9 Q62702-P3594
SFH 310 ± 25 0.19 ≥ 0.4 70 380 … 1080 – Q62702-P874 24
SFH 310-2/3 0.63 … 2.0 7/8 Q62702-P3595
T 1
SFH 309 P ± 75 0.045 ≥ 0.063 35 380 … 1080 8 Q62702-P245 25
T 1¾
SFH 313 ± 10 0.55 ≥ 2.5 50 450 … 1100 – Q62702-P1667 26
SFH 313-2/3 4.0 … 12.5 10/12 Q62702-P3598
SFH 314 ± 40 0.55 ≥ 0.63 50 450 … 1100 – Q62702-P1668 27
SFH 314-2/3 1.0 … 3.2 10/12 Q62702-P3600
SFH 300 ± 25 0.12 ≥ 0.63 35 420 … 1130 – Q62702-P1189 28
SFH 300-3/4 1.0 … 3.2 10 Q62702-P3586
T 1¾
SFH 303
± 20 0.3
≥ 1.0
50 450 … 1100
– Q62702-P957
29
SFH 303-3/4 1.6 … 5.0 13/15 Q62702-P3588
LPT 80 A ± 35 0.3 ≥ 0.25 30 400 … 1100 10 Q68000-A7852 30
4.1.2 im Plastikgehäuse mit Filter für 880/950 nm IRED 4.1.2 in Plastic Package with Filter Matched for 880/950 nm IRED
T 1
SFH 309 FA
± 12 0.045
≥ 0.4
35 730 … 1100
– Q62702-P941
23
SFH 309 FA-3/4 0.63 … 2.0 6/7 Q62702-P3590
SFH 309 FA-4 1.0 … 2.0 7 Q62702-P178
SFH 309 FA-4/5 1.0 … 3.2 7/8 Q62702-P3591
SFH 309 FA-5 1.6 … 3.2 8 Q62702-P180
SFH 309 FA-5/6 1.6 … 5.0 8/10 Q62702-P5199
SFH 310 FA ± 25 0.19 ≥ 0.4 70 730 … 1100 – Q62702-P1673 24
SFH 310 FA-2/3 0.63 … 2.0 7/9 Q62702-P3596
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
17
4.1.2 Fototransistoren im Plastikgehäuse 4.1.2 Phototransistors in Plastic Package (cont’d)
T 1
SFH 309 PFA ± 75 0.045 ≥ 0.063 35 730 … 1100 – Q62702-P246 25
T 1¾
SFH 313 FA
± 10 0.55
≥ 2.5
50 730 … 1100
– Q62702-P1674
26SFH 313 FA-2/3 4.0 … 12.5 10/12 Q62702-P3597
SFH 313 FA-3/4 6.3 … 20 12/14 Q62702-P5196
SFH 314 FA ± 40 0.55 ≥ 0.63 50 730 … 1100 – Q62702-P1675 27
SFH 314 FA-2/3 1.0 … 3.2 10/12 Q62702-P3599
SFH 300 FA ± 25 0.12 ≥ 0.63 35 730 … 1100 – Q62702-P1193 28
SFH 300 FA-3/4 1.0 … 3.2 10 Q62702-P3585
T 1¾
SFH 303 FA
± 20 0.3
≥ 1
50 730 … 1100
– Q62702-P958
29
SFH 303 FA-3/4 1.6 … 5.0 13/15 Q62702-P3587
SFH 3100 F ± 14 0.11 > 0.25 30 840 … 1080 7/9 Q62702-P5073
31
SFH 3130 F
Photodarlington ± 25 0.11 typ. 25 20
70 ( t < 2 min.) 840 … 1060 – Q62702-P5250
4.2 Fototransistoren im Metallgehäuse 4.2 Phototransistors in Metal Package
TO-18
BPY 62
± 8 0.12
0.5 … 2.5
50 420 … 1130
– Q60215-Y62
32
BPY 62-3 0.8 … 1.6 7 Q60215-Y1112
BPY 62-3/4 0.8 … 2.5 7/9 Q62702-P5198
BPY 62-4 1.25 … 2.5 9 Q60215-Y1113
BPX 43
± 15 0.675
≥ 0.8
50 450 … 1100
– Q62702-P16
32
BPX 43-2/3 0.8 … 2.5 9/12 Q62702-P3580
BPX 43-3 1.25 … 2.5 12 Q62702-P16-S3
BPX 43-3/4 1.25 … 4.0 12/14 Q62702-P3581
BPX 43-4 2.0 … 4.0 15 Q62702-P16-S4
BPX 43-4/5 ≥2.0 15/18 Q62702-P3582
BPX 43-5 ≥ 3.2 18 Q62702-P16-S5
TO-18
BPX 38
± 40 0.675
≥ 0.2
50 450 … 1120
– Q62702-P15
33
BPX 38-2/3 0.2 … 0.63 9/12 Q62702-P3578
BPX 38-3 0.32 … 0.63 12 Q62702-P15-S3
BPX 38-3/4 0.32 … 1.0 12/15 Q62702-P3579
BPX 38-4 0.5 … 1.0 15 Q62702-P15-S4
BPX 38-4/5 ≥ 0.5 15/18 Q62702-P5197
BPX 38-5 ≥ 0.8 18 Q62702-P15-S5
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IPCE (λ = 950 nm,
Ee = 0.5 mW/cm2,
VCE = 5 V)
mA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
18
5. PN-Fotodioden 5. PN Photodiodes
TA = 25 °CTA = 25 °C
4.2 Fototransistoren im Metallgehäuse 4.2 Phototransistors in Metal Package (cont’d)
TO-18
SFH 302 ± 40 0.675 ≥ 0.4 50 450 … 1100 – Q62702-P1641 34
BP 103 ± 55 0.12 ≥ 0.08 50 420 … 1130 – Q62702-P75 34
BP 103-3/4 0.125 … 0.4 7/9 Q62702-P3577
4.3 Zeilen im klaren Plastikgehäuse bis zu 10 Transistoren 4.3 Arrays in Clear Plastic Package up to 10 Transistors
SFH 305
±16 0.17
≥ 0.25
32 440 … 1070
– Q62702-P836
35
SFH 305-2/3 0.25 … 0.8 5.5/6 Q62702-P3589
BPX 81
±18 0.17
≥0.25
32 440 … 1070
– Q62702-P20
36
BPX 81-2/3 0.2 … 0.8 5.5/6 Q62702-P3583
BPX 81-3 0.4 … 0.8 6 Q62702-P43-S3
BPX 81-3/4 0.4 … 1.25 6/8 Q62702-P3584
BPX 81-4 ≥0.63 8 Q62702-P43-S4
BPX 83
BPX 82
±18
2 × 0.17
≥0.25 32 440 … 1070 –
Q62702-P21
37
BPX 83 3 × 0.17 Q62702-P25
BPX 84 4 × 0.17 Q62702-P30
BPX 85 5 × 0.17 Q62702-P31
BPX 86 6 × 0.17 Q62702-P22
BPX 87 7 × 0.17 Q62702-P32
BPX 88 8 × 0.17 Q62702-P33
BPX 89 9 × 0.17 Q62702-P26
BPX 80 10 × 0.17 Q62702-P28
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(λ = 950 nm,
Ee = 1 mW/cm2,
VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
5.1 im Plastikgehäuse 5.1 in Plastic Package
BPX 90 ± 60 1.75 × 3.15 45 (≥ 32)
EV = 1000 lx
5 (≤ 180) 400 … 1100 1.3 Q62702-P47 38
BPX 90 F ± 60 1.75 × 3.15 26 (≥ 16) 5 (≤ 180) 800 … 1100 1.3 Q62702-P928 38
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IPCE (λ = 950 nm,
Ee = 0.5 mW/cm2,
VCE = 5 V)
mA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
19
6. Sehr schnelle PIN-Fotodioden 6. PIN Photodiodes
for High-Speed Applications
5.2 sperrstromarm 5.2 Low Reverse Current
BPW 33 ± 60 2.71 × 2.71 75 (≥ 35)
EV = 1000 lx
20 (≤ 100) pA,
(VR = 1 V) 350 … 1100 1.5 Q62702-P76 39
TO-18
BPX 63 ± 75 0.985 × 0.985 10 (≥ 8) 5 (≤ 20) pA,
(VR = 1 V) 350 … 1100 1.3 Q62702-P55 40
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 20 V,
RL = 50 Ω)
ns
Ordering code Fig.
6.1 Sehr schnelle PIN-Fotodioden im Plastikgehäuse 6.1 PIN Photodiodes for High-Speed Applications in Plastic
Package
6.1.1 im klaren Plastikgehäuse 6.1.1 in Clear Plastic Package
BPW 34 ± 60 2.65 × 2.65 80 (≥ 50)
EV = 1000 lx
2 (≤ 30) 400 … 1100 10 Q62702-P73 39
TO-92
SFH 206K ± 60 2.65 × 2.65 80 (≥ 50) 2 (≤ 30) 400 … 1100 10 Q62702-P129 41
T 1
SFH 229 ± 17 0.56 × 0.56 28 (≥ 18)
EV = 1000 lx
0.05 (≤ 5) 380 … 1100 5 Q62702-P215 23
T 1¾
SFH 203 ± 20 1 × 180 (≥ 50) 1 (≤ 10)
(VR = 20 V) 400 … 1100 5 Q62702-P955 42
SFH 213 ± 10 1 × 1 135 (≥ 100) 1 (≤ 10)
(VR = 20 V) 400 … 1100 5 Q62702-P930 26
SFH 214 ± 40 1 × 145 (≥ 30) 1 (≤ 10)
(VR = 20 V) 400 … 1100 5 Q62702-P922 27
T 1¾
SFH 203 P ± 75 1 × 1 9.5 (≥ 5) 1 (≤ 10)
(VR = 20 V) 400. … 1100 5 Q62702-P946 43
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(λ = 950 nm,
Ee = 1 mW/cm2,
VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 5 V,
RL = 1 kΩ)
µs
Ordering code Fig.
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
20
6.1.Sehr schnelle PIN-Fotodioden im Plastikgehäuse 6.1 PIN Photodiodes for High-Speed Applications in Plastic
Package (cont’d)
6.1.2 im Plastikgehäuse mit Filter für 880 nm IRED 6.1.2 in Plastic Package with Filter Matched for 880 nm IREDs
SFH 225 FA ± 60 2.2 × 2.2 34 (≥ 25)
λ = 870 nm, Ee = 1 mW/cm2
2 (≤ 30) 740 … 1100 10 Q62702-P1051 44
SFH 235 FA ± 65 2.65 × 2.65 50 (≥ 40) 2 (≤ 30) 740 … 1100 10 Q62702-P273 44
TO-92
SFH 205 FA ± 60 2.65 × 2.65 60 (≥ 45) 2 (≤ 30) 740 … 1100 10 Q62702-P1677 45
BPW 34 FA ± 60 2.65 × 2.65 50 (≥ 40) 2 (≤ 30) 740 … 1100 10 Q62702-1129 39
T 1
SFH 229 FA ± 17 0.56 × 0.56 40 (≥ 22)
λ = 950 nm, Ee = 1 mW/cm2
0.05 (≤ 5) 740 … 1100 5 Q62702-P216 23
T 1¾
SFH 203 FA ± 20 1 × 1 100 (≥ 60) 1 (≤ 10)
(VR = 20 V) 740 … 1100 5 Q62702-P956 42
SFH 213 FA ± 10 1 × 190 (≥ 65)
λ = 870 nm
1 (≤ 10)
(VR = 20 V) 750 … 1100 5 Q62702-P1671 26
SFH 214 FA ± 40 1 × 125 (≥ 20) 1 (≤ 10)
(VR = 20 V) 750 … 1100 5 Q62702-P1672 27
T 1¾
SFH 203 PFA ± 75 1 × 1 6.2 (≥ 3.6)
λ = 950 nm
1 (≤ 10)
(VR = 20 V) 740 … 1100 5 Q62702-P947 43
TO-92
SFH 204 FA ± 60 2.2 × 2.2 52 (≥ 43)
λ = 870 nm
2 (≤ 30) 740 … 1120 10 Q62702-P1793 46
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 20 V,
RL = 50 Ω)
ns
Ordering code Fig.
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
21
6.1.3 im Plastikgehäuse mit Filter für 950 nm IRED 6.1.3 in Plastic Package with Filter Matched for 950 nm IREDs
BP 104 F ± 60 2.2 × 2.2 34 (≥ 25)
λ = 950 nm, Ee = 1 m/cm2
2 (≤ 30) 800 … 1100 10 Q62702-P84 47
BPW 34 F ± 60 2.65 × 2.65 50 (≥ 40) 2 (≤ 30) 800 … 1100 10 Q62702-P929 39
TO-92
SFH 205 F ± 60 2.65 × 2.65 60 (≥ 45) 2 (≤ 30) 800 … 1100 10 Q62702-P102 45
TO-92
SFH 204 F ± 60 2.2 × 2.2 52 (≥ 43) 2 (≤ 30) 780 … 1120 10 Q62702-P5052 46
6.2 Sehr schnelle PIN-Fotodioden 6.2 PIN Photodiodes for High-Speed Applications
im hermetisch dichten Metallgehäuse in Hermetically Sealed Metal Package
TO-18
SFH 216 ± 12 1 × 150 (≥ 35)
EV = 1000 lx
1 (≤ 5) 350 … 1100 5 Q62702-P936 48
TO-18
BPX 65 ± 40 1 × 110 (≥ 5.5) 1 (≤ 5) 350 … 1100 5 Q62702-P27 49
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 20 V,
RL = 50 Ω)
ns
Ordering code Fig.
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
22
7. Fotodetektoren für spezielle 7. Photodetectors for Special
Anwendungen Applications
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
µA
IR
(VR = 10 V)
nA
Sλ rel
%
tr,tf
(VR = 5 V)
µs
Ordering code Fig.
7.1 Blau-empfindliche Fotodiode 7.1 Blue-sensitive Photodiode
BPW 34 B ± 60 2.73 × 2.73
14.8 (> 10.8)
Ee = 1 mW/cm2
λ = 400 nm
VR = 5 V
2 (≤ 30) 30%
(400 nm) 25 ns
(RL = 50 Ω)Q62702-P945 39
7.2 Fotodetektoren für den sichtbaren Bereich 7.2 Photodetectors for the Visible Range
7.2.1 Fotodiode für den sichtbaren Bereich (Vλ-Kurve) 7.2.1 Photodiode for the Visible Range (Vλ-Curve)
TO-39
BPW 21 ± 55 2.73 ×2.73 10 (> 5.5)
EV = 1000 lx
VR = 0 V
8 (≤ 200) pA
(VR = 1 V) 100%
(550 nm) 1.5
(RL = 1 kΩ)Q62702-P885 50
7.2.2 Fototransistor für den sichtbaren Bereich (Vλ-Kurve) 7.2.2 Phototransistor for the Visible Range (Vλ-Curve)
SFH 3410 ± 60 0.29 >3.5
E
V = 20 lx
VCE = 5 V
3 (< 50)
VCE = 5 V 100%
(570 nm) – Q62702-P5160 12
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(VR = 5 V,
EV = 1000 lx,
standard light A)
µA
IR
(VR = 10 V)
nA
λ10 %
nm
tr,tf
(VR = 5 V)
ns
Ordering code Fig.
7.3 Großflächige PIN-Fotodiode 7.3 Large-Area PIN Photodiode
TO-39
BPX 61 ± 55 2.65 ×2.65 70 (≥ 50) 2 (≤ 30) 400 … 1100 20
(RL = 50 Ω)Q62705-P25 50
7.4 Zweifach-Fotodioden 7.4 Double Photodiodes
TO-39
SFH 221 ± 55 2 mal/times
2.2 × 0.7 24 (≥ 15) 10 (≤ 100) 400 … 1100 500
(RL = 1 kΩ)Q62702-P270 51
SI-FOTODETEKTOREN SILICON PHOTODETECTORS
23
7.5 Ultraviolet empfindlicher Sensor 7.5 Ultraviolet Selective Sensor
7.4 Zweifach-Fotodioden 7.4 Double Photodiodes (cont’d)
BPX 48 ± 60
2 mal/times
2.2 × 0.7
24 (≥ 15) 10 (≤ 100) 400 … 1150 500
(RL = 1 kΩ)Q62702-P17-S1
52
BPX 48F ± 60 7.5 (≥ 4.0)
Ee = 0.5 mW/cm2
λ = 950 nm 10 (≤ 100) 400 … 1150 500
(RL = 1 kΩ)Q62702-P305
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
VOUT
(VS = 5 V,
λ = 313 nm,
Ee=
mV
λpeak
nm
Responsivity
to ambient
light
(> 400 nm)
mV/lx
λ10 %
nm
Ordering code Fig.
TO-39
SFH 530-Y/B/G/R ±7.5 1 > 135 313 < 0.5 270 … 370 Q62702-P5079 53
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(VR = 5 V,
EV = 1000 lx,
standard light A)
µA
IR
(VR = 10 V)
nA
λ10 %
nm
tr,tf
(VR = 5 V)
ns
Ordering code Fig.
1nW
mm2
------------
OPTISCHE SENSOREN OPTICAL SENSORS
24
8. Optische Sensoren 8. Optical Sensors
Package Type Features Slot width
mm
Aperture slit
width on
emitter/sen-
sor side
mm
ICE
(IF = 20 mA,
VCE = 5 V)
mA
ICEO
(IF = 0,
VCE = 20 V)
nA
VF
(IF = 20 mA)
V
Ordering code Fig.
8.1 Gabellichtschranken 8.1 Slotted Interrupters
SFH 9300
no aperture
slits, high
current trans-
fer ratio
3.65 – / – > 1 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5019 54
SFH 9301
with vertical
aperture slits,
high resolu-
tion
3.18 1.27 / 0.25 > 0.7 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5083 55
SFH 9302
with vertical
aperture slits,
two moun-
ting tabs
3.18 1.27 / 0.25 > 0.7 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5084 56
SFH 9303
with vertical
aperture slits,
mounting tab
on sensor
side
3.18 1.27 / 0.25 > 0.7 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5085 57
SFH 9304
with vertical
aperture slits,
mounting tab
on emitter
side
3.18 1.27 / 0.25 > 0.7 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5086 58
SFH 9305
with vertical
aperture slits,
mounting tab
on sensor
side, loca-
ting pins
3.28 0.5 / 0.5 > 0.7 2 (≤ 50) 1.2 (≤ 1.4) on request 59
SFH 9306 with vertical
aperture slits,
locating pins 3.18 1.27 / 0.25 > 0.7 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5130 60
SFH 9310 horizontal
slits 5.00 0.5 / 0.5 > 0.7 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5214 61
SFH 9330
with vertical
aperture slits,
photo dar-
lington output
3.18 1.27 / 0.25 > 1
(at IF = 1 mA) <1 µA 1.2 (≤ 1.4) Q62702-P5263 62
SFH 9500
with vertical
aperture slits,
SMT version,
suitable for
reflow solde-
ring, locating
pins
5.00 0.5 / 0.5 > 1 2 (≤ 50) 1.2 (≤ 1.4) Q62702-P5066 63
OPTISCHE SENSOREN OPTICAL SENSORS
25
Package Type Features Slot
width
mm
Aperture slit
width on
emitter/sen-
sor side
mm
VCC
V
Thres-
hold
input
current
IF, ON
mA
Hystere-
sis
IF, OFF /
IF, ON
Propagation
delay time
tPHL, tPLH
(RL= 280 Ω,
VCC = 5 V,
IF= 4 mA)
µs
VF
(IF =
20 mA)
V
Ordering code Fig.
8.1 Gabellichtschranken 8.1 Slotted Interrupters (cont’d)
SFH 9340
Schmitt-
Trigger
output,
SFH 9340
active “low”
3.18 1.27 / 0.25 4 ... 18 0.6 (< 2) 0.6 2 1.2
(≤ 1.4) Q62702-P5120
64
SFH 9341
Schmitt-
Trigger
output,
SFH 9341
active “high”
3.18 1.27 / 0.25 4 ... 18 0.6 (< 2) 0.6 2 1.2
(≤ 1.4) Q62702-P5121
Package Type ICE
(IF = 10 mA, VCE = 5 V,
d = 1 mm)
mA
ICE0
(VCE = 10 V)
nA
VCE0
V
VF
(IF = 50 mA)
V
Ordering code Fig.
8.2 SMT-Reflexlichtschranken 8.2 SMT Reflective Sensors
SFH 9201 0.25 ... 2.00
3 (≤ 200)
30 1.25 (≤ 1.65)
Q62702-P5038
65
SFH 9201-2/3 0.40 ... 1.25 Q62702-P5056
SFH 9201-3/4 0.63 ... 2.00 Q62702-P5057
SFH 9202 0.063 ... 0.32
1 (≤ 50)
Q62702-P5039
SFH 9202-2/3 0.063 ... 0.2 Q62702-P5009
SFH 9202-3/4 0.10 ... 0.32 Q62702-P5010
SFH 9260 ≥ 0.25 1 (≤ 50) 30 1.85 (≤ 2.1)
(IF = 20 mA,
660 nm emitter) on request 65
Package Type Features VCC
V
Threshold
input current
IF, on
(VCC = 5 V,
d= 1 mm)
mA
Hystere-
sis
IF, OFF /
IF, ON
Propagation
delay time
tPHL, tPLH
(RL= 280 Ω,
VCC = 5 V,
IF= 20 mA)
ns
VF
(IF= 50 mA)
V
Ordering code Fig.
SFH 9240
Schmitt-
Trigger
Output,
active “low” 4 ... 18 3 (< 10) 0.6 2 1.25 (≤ 1.65)
Q62702-P5118
65
SFH 9241
Schmitt-
Trigger
Output,
active “high”
Q62702-P5119
IR-LUMINESZENZDIODEN INFRARED EMITTERS
26
TYPENÜBERSICHT (IR-LUMINESZENZDIODEN)SUMMARY OF TYPES (INFRARED EMITTERS)
1. Emitter in SMT 1. Emitters in SMT
TOPLED®
SFH 420 / SFH 4211 /
SFH 421 / SFH 4200
TOPLED® RG
SFH 4281 Mini TOPLED®
SFH 4203 SIDELED®
SFH 425 / SFH 426 / SFH 4205
SMR
SFH 4580
SFH 4585
SMR
SFH 4500 / SFH 4510
SFH 4505 / SFH 4515
Multi TOPLED®
SFH 331 / SFH 7222 / SFH 7221 /
SFH 7225 / SFH 7226
2. Sehr schnelle Emitter 2. High-Speed High-Power Emitters
TOPLED®
SFH 4200 SIDELED®
SFH 4205 Mini TOPLED®
SFH 4203 SMR
SFH 4500
SFH 4505
SFH 4301 SFH 4501 / SFH 4502 /
SFH 4503 SFH 495P SFH 4552
IR-LUMINESZENZDIODEN INFRARED EMITTERS
27
3. Emitter im Plastikgehäuse 3. Emitters in Plastic Package
IRL 80 A / IRL 81 A SFH 4110 SFH 484 / SFH 485 / SFH 486 LD 274
LD 271 SFH 415 / SFH 416 SFH 487 SFH 409
SFH 485 P SFH 487 P
4. Emitter im Metallgehäuse 4. Emitters in Metal Package
SFH 464 / SFH 483 / LD 242 SFH 400 / SFH 460 / SFH 480 SFH 4860 SFH 401 / SFH 481
SFH 402 / SFH 482
5. Miniatur-Emitter 5. Miniature Emitters
LD 261 LD 263 SFH 405
TYPENÜBERSICHT (IR-LUMINESZENZDIODEN)SUMMARY OF TYPES (INFRARED EMITTERS)
IR-LUMINESZENZDIODEN INFRARED EMITTERS
28
1. Emitter in SMT 1. Emitters in SMT
Package Type λpeak
nm ϕ
deg. Ie
mW/Sr VF
Vtr
ns Ordering code Fig.
TOPLED
SFH 420 950 ± 60 ≥ 2.5 1.3 at IF = 100 mA
tP = 20 ms 500 Q62702-P1690
66SFH 4211 950 ± 60 > 4 1.3 at IF = 100 mA
tP = 20 ms 500 Q62702-P1825
SFH 421 880 ± 60 > 4 1.5 at IF = 100 mA
tP = 20 ms 500 Q62702-P1055
SFH 4200 950 ± 60 > 4 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P978 67
TOPLED RG
SFH 4281 880 ± 60 > 4 1.5 at IF = 100 mA
tP = 20 ms 500 Q62702-P5000 89
Mini TOPLED
SFH 4203 950 ± 65 > 4 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5232 68
SIDELED
SFH 425 950 ± 60 ≥ 2.5 1.3 at IF = 100 mA
tP = 20 ms 500 Q62702-P330 90
SFH 426 880 ± 60 > 4 1.5 at IF = 100 mA
tP = 20 ms 500 Q62702-P331
SFH 4205 950 ± 60 > 4 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5165 69
T 1¾
SFH 4500 950 ± 14 > 25 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5163 70
SFH 4510 950 ± 14 ≥ 25 1.3 at IF = 100 mA
tP = 20 ms 500 Q62702-P1798 7
T 1¾
SFH 4505 950 ± 14 > 25 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5164 71
SFH 4515 950 ± 14 ≥ 25 1.3 at IF = 100 mA
tP = 20 ms 500 Q62702-P1821 8
T 1¾
SFH 4580 880 ± 15 ≥ 25 1.5 at IF = 100 mA
tP = 20 ms 500 Q62702-P1806 70
T 1¾
SFH 4585 880 ± 15 ≥ 25 1.5 at IF = 100 mA
tP = 20 ms 500 Q62702-P1799 71
IR-LUMINESZENZDIODEN INFRARED EMITTERS
29
Zwei Sender in SMT-Multi TOPLED Two Emitters in SMT-Multi TOPLED
Empfänger/Sender in SMT-Multi TOPLED Detector/Emitter in SMT-Multi TOPLED
Package Type λpeak
nm ϕ
deg. IV
mcd Ie
mW/sr VF
Vtr
ns Ordering code Fig.
Multi TOPLED
SFH 7222 880
565 ± 60 –
≥ 4 > 4
–1.5
2.0 at IF = 100 mA
IF = 10 mA 500
450 Q62702-P5095 72
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd Ie
mW/sr VF
VOrdering code Fig.
Multi TOPLED
SFH 331-JK
635 ± 60 4...12.5 – 2.0 at IF = 20 mA
Q62702-P1634 5
Empfänger
Detector
Radiant
sensitive
area
mm2
IPCE (λ = 950
nm, Ee =
0.1 mW/cm2,
VCE = 5 V)
µA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
0.045 ≥16 35 380 ... 1150 7
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd Ie
mW/sr VF
VOrdering code Fig.
Multi TOPLED
SFH 7221
880 ± 60 – 4 1.5 at IF = 20 mA
Q62702-P1819 6
Empfänger
Detector
Radiant
sensitive
area
mm2
IPCE (λ = 950
nm, Ee =
0.1 mW/cm2,
VCE = 5 V)
µA
VCEO
V
λ10%
nm
tr,tf
(IC = 1 mA,
VCC = 5 V,
RL = 1 kΩ)
µs
0.045 ≥16 35 380 ... 1150 7
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd VF
VOrdering code Fig.
Multi TOPLED
SFH 7225
591 ± 60 125 typ. 2.0 at IF = 20 mA
on request 5
Empfänger
Detector
Radiant
sensitive
area
mm2
IPCE (Ev =
1000 lx
Standard
light A
VCE = 5 V)
µA
VCEO
V
Crosstalk IPCE
(IF = 20 mA,
VCE = 5 V)
µA
0.045 650 typ. 35 850 typ.
Package Type Sender
Emitter λpeak
nm ϕ
deg. IV
mcd VF
VOrdering code Fig.
Multi TOPLED
SFH 7226
645 ± 60 70 typ. 2.0 at IF = 20 mA
on request 5
Empfänger
Detector
Radiant
sensitive
area
mm2
IPCE (Ev =
1000 lx
Standard
light A
VCE = 5 V)
µA
VCEO
V
Crosstalk IPCE
(IF = 20 mA,
VCE = 5 V)
µA
0.045 650 typ. 35 850 typ.
IR-LUMINESZENZDIODEN INFRARED EMITTERS
30
2. Sehr schnelle Emitter 2. High-Speed High-Power Emitters
Package Type λpeak
nm ϕ
deg. Ie
mW/sr VF
Vtr
ns Ordering code Fig.
TOPLED
SFH 4200 950 ± 60 > 4 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P978 67
SIDELED
SFH 4205 950 ± 60 > 4 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5165 69
Mini TOPLED
SFH 4203 950 ± 65 > 4 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5232 68
T 1¾
SFH 4500 950 ± 14 > 25 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5163 70
T 1¾
SFH 4505 950 ± 14 > 25 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5164 71
T 1¾
SFH 4301 950 ± 8 > 40 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5166 73
T 1¾
SFH 4501 950 ± 8 > 63 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5061 74
SFH 4502 950 ± 20 > 40 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5062 75
SFH 4503 950 ± 4 > 63 1.5 at IF = 100 mA
tP = 20 ms 10 Q62702-P5305 76
T 1¾
SFH 495 P 950 ± 30 > 160 2.1 at IF = 1 A
tP = 10 µs1 Q62702-Q2891 77
T 1¾
SFH 4552 950 ± 50 > 100 2.1 at IF = 1 A
tP = 10 µs1 Q62702-P5054 27
IR-LUMINESZENZDIODEN INFRARED EMITTERS
31
3. Emitter im Plastikgehäuse 3. Emitters in Plastic Package
Package Type λpeak
nm ϕ
deg. Ie
mW/sr VF
VOrdering code Fig.
IRL 81 A 880 ± 25 ≥ 1.0 1.5 at IF = 20 mA
tP = 20 ms Q68000-A8000 78
T 1¾
SFH 484
SFH 484-2 880 ± 8 50 … 320
80 … 160 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q1092
Q62703-Q1756 79
SFH 486 880 ± 11 ≥ 40 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q1094 80
SFH 485
SFH 485-2 880 ± 20 25 … 160
25 … 100 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q1093
Q62703-Q1547 81
T 1
SFH 487
SFH 487-2
SFH 487-3 880 ± 20 > 12.5
25 … 80
40 … 125 1.5 at IF = 100 mA
tP = 20 ms
Q62703-Q1095
Q62703-Q2174
Q62703-Q2175 73
T 1¾
SFH 485 P 880 ± 40 > 3.15 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q516 82
T 1
SFH 487 P 880 ± 65 > 2 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q517 83
IRL 80 A 950 ± 30 ≥ 0.4 1.2 at IF = 20 mA
tP = 20 ms Q68000-A7851 78
SFH 4110 950 ± 9 ≥ 1.6 1.2 at IF = 20 mA
tP = 20 ms Q62702-P5072 31
LD 274
LD 274-3 950 ± 10 ≥ 50
≥ 80 1.3 at IF = 100 mA
tP = 20 ms Q62703-Q1031
Q62703-Q1820 84
T 1¾
LD 271
LD 271 H 950 ± 25
15 (≥ 10)
≥ 16 1.3 at IF = 100 mA
tP = 20 ms
Q62703-Q148
Q62703-Q256 85
LD 271 L
LD 271 HL 15 (≥ 10)
≥ 16 Q62703-Q833
Q62703-Q838 42
Nicht für Neuentwicklungen/Not for new design
IR-LUMINESZENZDIODEN INFRARED EMITTERS
32
T 1¾
SFH 415
SFH 415-U 950 ± 17 ≥ 25
≥ 40 1.3 at IF = 100 mA
tP = 20 ms Q62702-P296
Q62702-P1137 42
SFH 416-R 950 ± 28 ≥ 10 1.3 at IF = 100 mA
tP = 20 ms Q62702-P1139 27
T 1
SFH 409
SFH 409-2 950 ± 20 ≥ 6.3
10 … 40 1.3 at IF = 100 mA
tP = 20 ms Q62702-P860
Q62702-P1002 73
4. Emitter im Metallgehäuse 4. Emitters in Metal Package
Package Type λpeak
nm ϕ
deg. Ie
mW/sr VF
VOrdering code Fig.
TO 18
SFH 464 E 7800 660 ± 23 ≥ 12.1
at IF = 50 mA
tP = 20 ms Q62702-Q1745 40
TO 18
SFH 460 660 ± 6 ≥ 16 2.1 at IF = 50 mA
tP = 20 ms Q62702-P478 86
TO 18
SFH 4860 660 ± 50 ≥ 0.63 2.1 at IF = 50 mA
tP = 20 ms Q62702-P5053 87
TO 18
SFH 480
SFH 480-2/3 880 ± 6 ≥ 20
40 … 125 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q1087
Q62703-Q5195 48
TO 18
SFH 481
SFH 481-1/2
SFH 481-2/3 880 ± 15 ≥ 10
10 … 32
16 … 40 1.5 at IF = 100 mA
tP = 20 ms
Q62703-Q1088
Q62703-Q4752
Q62703-Q4753 88
TO 18
SFH 483-L/M E 7800 880 ± 23 1 … 3.2 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q4755 40
3. Emitter im Plastikgehäuse 3. Emitters in Plastic Package
Package Type λpeak
nm ϕ
deg. Ie
mW/sr VF
VOrdering code Fig.
IR-LUMINESZENZDIODEN INFRARED EMITTERS
33
TO 18
SFH 482
SFH 482-1/2
SFH 482-2/3 880 ± 30 ≥ 3.15
4 … 12.5
6.3 … 20 1.5 at IF = 100 mA
tP = 20 ms
Q62703-Q1089
Q62703-Q4771
Q62703-Q4754 49
SFH 482 E 7800 880 ± 30 1 … 3.2 1.5 at IF = 100 mA
tP = 20 ms Q62703-Q2186
TO 18
LD 242
LD 242-2/3
LD 242 E7800 950 ± 40 ≥ 4
4…20
1…3.2 1.3 at IF = 100 mA
tP = 20 ms
Q62703-Q151
Q62703-Q4749
Q62703-Q3509 40
TO 18
SFH 400
SFH 400-3 950 ± 6 ≥ 20
32 … 125 1.3 at IF = 100 mA
tP = 20 ms Q62702-P96
Q62702-P784 48
TO 18
SFH 401
SFH 401-3 950 ± 15 ≥ 10
16 … 63 1.3 at IF = 100 mA
tP = 20 ms Q62702-P97
Q62702-P787 88
TO 18
SFH 402
SFH 402-3 950 ± 40 ≥ 2.5
4…16 1.3 at IF = 100 mA
tP = 20 ms Q62702-P98
Q62702-P790 49
5. Miniatur-Emitter 5. Miniature Emitters
Package Type λpeak
nm ϕ
deg. Ie
mW/sr VF
VOrdering code Fig.
LD 261
LD 261-5 950
± 30
2…10
3.2 … 6.3 1.3 at IF = 50 mA
tP = 20 ms Q62703-Q395
Q62703-Q67 36
LD 263
LD 262 (2 digits)
LD 263 (3 digits)
LD 264 (4 digits)
LD 265 (5 digits)
LD 266 (6 digits)
LD 267 (7 digits)
LD 268 (8 digits)
LD 269 (9 digits)
LD 260 (10 digits)
950 2 … 6.3 1.3 at IF = 50 mA
tP = 20 ms
Q62703-Q70
Q62703-Q71
Q62703-Q72
Q62703-Q73
Q62703-Q74
Q62703-Q75
Q62703-Q76
Q62703-Q77
Q62703-Q78
37
SFH 405 950 ± 16 ≥ 1.6 1.25 at IF = 40 mA
tP = 20 ms Q62702-P835 35
4. Emitter im Metallgehäuse 4. Emitters in Metal Package
Package Type λpeak
nm ϕ
deg. Ie
mW/sr VF
VOrdering code Fig.
IR-LUMINESZENZDIODEN INFRARED EMITTERS
34
Lochblendenmessung Aperture measurement
Für Lichtschrankenanwendungen sind Bauteile lieferbar,
die eine „Lochblendenmessung“ durchlaufen haben. Diese Messung ist durch den
Anhang „E 7800“ an die Typenbezeichnung gekennzeichnet.
Components for light reflection switch applications
are supplied which have passed an aperture measurement.
This measurement is denoted by “E 7800” added to the type designation.
Type L (mm) A (mm)
LD 242
SFH 483
SFH 482 Ø 1.1
Ø 2.0 4
5.4
Vorteile
Bei der Lochblendenmessung wird nur diejenige Strahlung in Achsrichtung
bewertet, die direkt aus der Oberfläche des Chips austritt. Reflexionen der
Bodenplatte und Seitenstrahlung fließen nicht in die Ie-Messung ein. Diese
reflektierte Strahlung ist störend, wenn die Chipoberfläche über Zusatzoptiken
abgebildet wird, z.B. beim Aufbau von Lichtschranken mit großer Reichweite. Der
Anwender erhält durch die Lochblendenmessung ein für Licht-
schrankenapplikationen optimal gemessenes Bauteil.
Advantages
Only the radiation in axial direction emitting directly from the chip surface will
be evaluated during aperture measurement. Radiation reflected by the
bottom plate and sidefacing of the chip will not be evaluated. This reflected
radiation is disruptive when the chip surface is supplemented by an additional
optical system e.g. in the construction of reflection switches. By using
components which have passed the aperture measurement test, the user
obtains devices which are optimally suited for the construction of reflection
switches.
OHA00230
L
100 mm
A
Detector
10 x 10 mm
2
ApertureChip position
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
35
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
Figure 1 SFH 5110, SFH 5111 Figure 2 SFH 320, SFH 320 FA
Figure 3 SFH 3211, SFH 3211 FA Figure 4 SFH 325, SFH 325 FA,
Figure 5 SFH 331, SFH 7225, SFH 7226 Figure 6 SFH 7221
GEOY6985
1.3 (0.051)
6.1 (0.240)
24.4 (0.961)
6.1 (0.240)
0.5 (0.020)
3.5 (0.138)
23.4 (0.921)
5.9 (0.232)
1.1 (0.043)
5.9 (0.232)
0.3 (0.012)
3.3 (0.130)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
1
2
3
4.9 (0.193)
5.1 (0.201)
2.8 (0.110)
3.0 (0.118)
32.0 (1.260)
30.0 (1.181)
2.54 (0.100)
Pinning SFH 5110
1 OUT
2 GND
3
Pinning SFH 5111
CC
VV
CC
3 GND
1 OUT
2
GPLY6030
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Collector marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
GPLY6067
0...0.1 (0.004)
Collector marking
4˚±1
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
3.4 (0.134)
3.0 (0.118)
(2.4 (0.094))
2.1 (0.083)
1.7 (0.067)
5.4 (0.213)
5.0 (0.197)
0.6 (0.024)
0.4 (0.016)
0.3 (0.012) min
0.3 (0.012) max
1.0 (0.039)
0.9 (0.035)
Collector
GPLY6068
(R1)
Collector marking
Collector Emitter
(2.4 (0.094))
2.8 (0.110)
2.4 (0.094)
4.2 (0.165)
3.8 (0.150)
0.9 (0.035)
1.1 (0.043)
spacing
2.54 (0.100)
0.7 (0.028)
(2.85 (0.112))
(1.4 (0.055))
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
3.8 (0.150)
4.2 (0.165)
(2.9 (0.114))
GPLY6924
CA
EC
32
41
0.4 (0.016)
0.6 (0.024)
0.18 (0.007)
0.12 (0.005)
0.1 (0.004) typ
0.5 (0.020)
1.1 (0.043)
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.6 (0.024)
0.8 (0.031)
2.3 (0.091)
2.1 (0.083)
2.6 (0.102)
3.0 (0.118)
3.0 (0.118)
3.4 (0.134)
(2.4 (0.094))
Package marking
Emission color : super-red (SFH 331)
3.3 (0.130)
3.7 (0.146)
GPLY6965
CC
EA
32
41
0.4 (0.016)
0.6 (0.024)
0.18 (0.007)
0.12 (0.005)
0.1 (0.004) typ
0.5 (0.020)
1.1 (0.043)
3.7 (0.146)
3.3 (0.130)
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.6 (0.024)
0.8 (0.031)
2.3 (0.091)
2.1 (0.083)
2.6 (0.102)
3.0 (0.118)
3.0 (0.118)
3.4 (0.134)
(2.4 (0.094))
Package marking
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
36
Figure 7 SFH 3500, SFH 3500 FA,
SFH 2500, SFH 2500 FA,
SFH 4510
Figure 8 SFH 3505, SFH 3505 FA,
SFH 2505, SFH 2505 FA
SFH 4515
Figure 9 SFH 3400 Figure 10 SFH 3401
Figure 11 SFH 3201 Figure 12 SFH 3410
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
GEOY6968
3.9 (0.154)
4.5 (0.177)
Cathode/
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
13.1 (0.516)
14.7 (0.579)
5.5 (0.217)
7.5 (0.295)
1.95 (0.077)
2.05 (0.081)
R((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
(-0.004...0.004)
3.7 (0.146)
3.3 (0.130)
2.7 (0.106)
2.3 (0.091)
4.5 (0.177)
3.9 (0.154)
Chip position
Collector
-0.1...0.1
GEOY6969
3.9 (0.154)
4.5 (0.177)
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
14.7 (0.579)
15.5 (0.610)
7.4 (0.291)
8.0 (0.315) ((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
R2.05 (0.081)
1.95 (0.077)
Cathode/
4.5 (0.177)
3.9 (0.154)
Chip position
(-0.006...0.006)
Collector
-0.15...0.15
GEOY6953
0.5 (0.020)
0.3 (0.012)
1.9 (0.075)
2.1 (0.083)
0.6 (0.024)
0.8 (0.031)
2.5 (0.098)
2.7 (0.106)
0.3 (0.012)
connected
EmitterCollector
4.8 (0.189)
4.4 (0.173)
1.1 (0.043)
1.0 (0.039)
0.2 (0.008)
0.3 (0.012)
0.0 (0.000)
0.1 (0.004)
Chip position
0.9 (0.035)
1.1 (0.043)
0.7 (0.028)
not
Active area
0.55 mm
2
GEOY6973
Collector
Base
Active area
0.55 mm
2
1.0 (0.039)
1.1 (0.043)
0.0 (0.000)
0.1 (0.004)
Chip position
0.3 (0.012)
0.2 (0.008)
4.8 (0.189)
4.4 (0.173)
0.7 (0.028)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
Emitter
2.5 (0.098)
2.7 (0.106)
0.3 (0.012)
0.5 (0.020)
1.9 (0.075)
2.1 (0.083)
0.9 (0.035)
1.1 (0.043)
3.4 (0.134)
3.0 (0.118)
5.8 (0.228)
6.2 (0.244)
0.15 (0.006)
0.13 (0.005)
0...0.1 (0...0.004)
2.1 (0.083)
1.7 (0.067)
4
6
1
3
GEOY6982
4.2 (0.165)
3.8 (0.150)
25
- Emitter Collector
12 3 4 6
5
---
0.3 (0.012)
0.5 (0.020)
spacing
spacing
0.4 (0.016)
0.7 (0.028)
B
A
0.2 M
A
Active area 0.55 (0.022)
0.1 M
B
2.54 (0.100)
1.27 (0.050)
GEOY6028
0.5 (0.020)
0.3 (0.012)
1.9 (0.075)
2.1 (0.083)
0.6 (0.024)
0.8 (0.031)
2.5 (0.098)
2.7 (0.106)
0.2 (0.008)
EmitterCollector
4.8 (0.189)
4.4 (0.173)
1.15 (0.045)
0.95 (0.037)
0.2 (0.008)
0.3 (0.012)
0.0 (0.000)
0.1 (0.004)
Chip position
0.9 (0.035)
1.1 (0.043)
0.6 (0.024) (not connected)
Active area
0.29 mm
2
0.2 (0.008)
0.6 (0.024)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
37
Figure 13 BP 104 FS, BP 104 S Figure 14 BPW 34 S, BPW 34 FS,
BPW 34 FAS Figure 15 BPW 34 S (E9087),
BPW 34 FAS (E9087),
BPW 34 FS (E9087)
Figure 16 SFH 2400, SFH 2400 FA Figure 17 KOM 2125, KOM 2125 FA Figure 18 SFH 5440, SFH 5441
Figure 19 SFH 5140 F, SFH 5141 F Figure 20 SFH 5840, SFH 5841
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6861
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
Chip position
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.20 (0.087) x 2.20 (0.087)
1.6 (0.063)
(0...0.004)
±0.2 (0.008)
0...0.1
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
±0.2 (0.008)
Chip position
0...0.1
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6916
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
±0.2 (0.008)
0...0.1
Chip position
GEOY6972
0.5 (0.020)
1.9 (0.075)
2.1 (0.083)
0.6 (0.024)
0.8 (0.031)
2.5 (0.098)
2.7 (0.106)
0.6 (0.024)
connected
Anode
Cathode
4.8 (0.189)
4.4 (0.173)
1.1 (0.043)
1.0 (0.039)
0.2 (0.008)
0.3 (0.012)
0.0 (0.000)
0.1 (0.004)
Chip position
0.9 (0.035)
notActive area
1 x 1
1.1 (0.043)
0.9 (0.035)
0.3 (0.012)
1.4 (0.055)
±0.2 (0.008)
4.5 (0.177)
4.3 (0.169)
8.5 (0.335)
8.2 (0.323)
0.9 (0.035)
0.7 (0.028)
GEOY6860
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
0...0.1 (0...0.004)
5.2 (0.205)
5.0 (0.197) 23
1
AB
Photosensitive area
B = 5 (0.197) x 2 (0.079)
A = 2 (0.079) x 2 (0.079)
Cathode
Active area
Chip position
GEOY6990
4.4 (0.173)
4.8 (0.189)
0.3 (0.012)
0.2 (0.008)
Chip position
0.1 (0.004)
0.0 (0.000)
1.1 (0.043)
1.0 (0.039)
0.8 (0.031)
0.6 (0.024)
0.5 (0.020)
0.3 (0.012)
1.1 (0.043)
0.9 (0.035)
1.9 (0.075)
2.1 (0.083)
2.5 (0.098)
2.7 (0.106)
Active area
GND OUT
CC
V
0.12 (0.005)
0.15 (0.006)
±0.1 (0.004)
GEOY6001
2.9 (0.114)
3.1 (0.122)
(0.5 (0.020) x 45˚)
0.85 (0.033)
1.05 (0.041)3.9 (0.154)
4.1 (0.161) 17.27 (0.680)
17.77 (0.700)
1.27 (0.050)
2.54 (0.100)
0.4 (0.016)
0.6 (0.024)
GND OUT
V
CC
V
0.66 (0.026)
0.86 (0.034)
0.84 (0.033)
1.04 (0.041) 0.9 (0.035)
0.7 (0.028)
1.4 (0.055)
1.6 (0.063)
1.3 (0.051)
1.1 (0.043)
R0.7 (0.028)
R0.9 (0.035)
(60˚)
2.5 (0.098)
1.27 (0.050)
0.5 (0.020)
0.3 (0.012)
0.5 (0.020)
3.0 (0.118)
2.8 (0.110)
2.2 (0.087)
2.0 (0.079)
GMOY6998
1.1 (0.043)
0.9 (0.035)
1.1 (0.043)
0.9 (0.035)
5.3 (0.209)
5.6 (0.220)
5.4 (0.213)
6.2 (0.244)
5.1 (0.201)
4.8 (0.189)
ø4.6 (0.181)
ø4.8 (0.189)
12.5 (0.492)
14.5 (0.571)
2.7 (0.106)
ø0.45 (0.018)
GND OUT
CC
V
Chip position
2.54 (0.100) spacing
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
38
Figure 21 SFH 5400 Figure 22 SFH 5130
Figure 23 SFH 309, SFH 309 FA,
SFH 229, SFH 229 FA Figure 24 SFH 310, SFH 310 FA
Figure 25 SFH 309 P, SFH 309 PFA Figure 26 SFH 313, SFH 313 FA
SFH 213, SFH 213 FA
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
GEOY6966
4.5 (0.177)
4.3 (0.169)
2.54 (0.100)
4.0 (0.157)
3.7 (0.146)
1.1 (0.043)
0.9 (0.035)
Photosensitive area
0.5 (0.020)x OUT
6.7 (0.264)
6.2 (0.244)
1.1 (0.043)
1.2 (0.047)
0...5˚
1.1 (0.043)
0.9 (0.035)
0.3 (0.012)
Chip position
spacing
GND
V
CC
0...0.1 (0...0.004)
0...0.1 (0...0.004)
0.5 (0.020)
GEOY6061
0.4 (0.016)
0.63 (0.025)
R0.9 (0.035) 5˚
5˚
0.9 (0.035)
2.54 (0.100)
4.6 (0.181)
2 (0.079)2 (0.079) 2.5 (0.098)
0.5 (0.020)
GND
0.5 (0.020)
(4 (0.157))
ø1.77 (0.070)
4.1 (0.161)
± 0.1 (0.004)
1.7 (0.067)
0.95 (0.037)
± 0.05 (0.002)
15.3 (0.602)
± 0.25 (0.010)
± 0.1 (0.004)
4.7 (0.185)
DD
V
OUT
V
0.6 (0.024)
0.4 (0.016)
4.0 (0.157)
3.6 (0.142)
ø3.1 (0.122)
ø2.9 (0.114)
4.1 (0.161)
3.9 (0.154)
5.2 (0.205)
4.5 (0.177)
3.5 (0.138)
6.3 (0.248)
5.9 (0.232)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
2.54 (0.100)
spacing
0.7 (0.028)
0.4 (0.016)
Chip position
Collector (Transistor)
Area not flat
GEOY6653
0.4 (0.016)
0.8 (0.031)
Cathode (Diode)
0.4 (0.016)
0.6 (0.024)
3.1 (0.122)
3.4 (0.134)
Area not flat
5.7 (0.224)
6.1 (0.240)
ø2.7 (0.106)
ø2.9 (0.114)
4.8 (0.189)
4.4 (0.173)
3.7 (0.146)
3.5 (0.138)
27.0 (1.063)
29.0 (1.142)
spacing
2.54 (0.100)
0.8 (0.031)
0.4 (0.016)
0.4 (0.016)
0.7 (0.028)
0.4 (0.016)
0.6 (0.024)
1.2 (0.047)
1.8 (0.071)
GEXY6710
0.9 (0.035)
1.1 (0.043)
Collector
0.6 (0.024)
0.4 (0.016)
4.0 (0.157)
3.6 (0.142)
ø3.1 (0.122)
ø2.9 (0.114)
2.0 (0.079)
1.7 (0.067)
3.1 (0.122)
2.5 (0.098)
3.5 (0.138)
4.5 (0.177)
4.1 (0.161)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
2.54 (0.100)
spacing
0.7 (0.028)
0.4 (0.016)
Chip position
Area not flat
GEOY6446
0.4 (0.016)
0.8 (0.031)
Emitter
Cathode (Diode)
GEXY6260
Collector (Transistor)
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047) Chip position
Cathode
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.5 (0.020)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
39
Figure 27 SFH 214, SFH 214 FA,
SFH 314, SFH 314 FA,
SFH 416, SFH 4552
Figure 28 SFH 300, SFH 300 FA
Figure 29 SFH 303, SFH 303 FA Figure 30 LPT 80 A
Figure 31 SFH 3100 F, SFH 3130 F, SFH 4110 Figure 32 BPX 43, BPY 62
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
ø5.1 (0.201)
ø4.8 (0.189)
2.54 (0.100)
spacing
5.7 (0.224)
5.5 (0.217)
6.9 (0.272)
6.1 (0.240)
4.0 (0.157)
3.4 (0.134)
29.5 (1.161)
27.5 (1.083)
1.8 (0.071)
1.2 (0.047)
0.8 (0.031)
0.4 (0.016)
Area not flat
0.6 (0.024)
0.4 (0.016)
Cathode (Diode) Chip position
GEXY6630
Collector (Transistor)
0.6 (0.024)
0.4 (0.016)
5.9 (0.232)
5.5 (0.217)
4.5 (0.177)
4.2 (0.165)
7.8 (0.307)
7.5 (0.295)
9.0 (0.354)
8.2 (0.323)
25.2 (0.992)
24.2 (0.953)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
0.6 (0.024)
0.4 (0.016)
1.0 (0.039)
0.7 (0.028)
ø5.1 (0.201)
Chip position
Area not flat
Emitter
GEOY6652
1.3 (0.051)
1.0 (0.039)
11.6 (0.457)
11.2 (0.441)
Collector
9.0 (0.354)
8.2 (0.323)
25.2 (0.992)
24.2 (0.953)
1.8 (0.071)
1.2 (0.047)
7.8 (0.307)
7.5 (0.295)
0.7 (0.028)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
11.5 (0.453)
10.9 (0.429)
6.9 (0.272)
2.54 (0.100)
spacing 2.54 (0.100)
spacing
5.1 (0.201)
4.8 (0.189)
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
B
Chip position
Area not flat
GEOY6351
CE
16.51 (0.650)
16.00 (0.630) 5.84 (0.230)
5.59 (0.220)
1.29 (0.051)
1.14 (0.045)
1.52 (0.060)
1.52 (0.060)
2.54 (0.100)
spacing
0.64 (0.025)
0.46 (0.018)
2.34 (0.092)
2.08 (0.082) 4.57 (0.180)
4.32 (0.170)
2.54 (0.100)
2.03 (0.080)
1.70 (0.067)
1.45 (0.057)
0.64 (0.025)
0.46 (0.018)
R = 0.76 (0.030)
Collector Plastic marking
GEOY6391
1.52 (0.060)
GEOY6976
2.54 (0.100)
1.04 (0.041)
4.1 (0.161)
17.77 (0.700)
3.1 (0.122)
R 0.9 (0.035)
0.5 (0.020) x 45˚
0.5 (0.020)
1.42 (0.056)
Cathode
1.04 (0.041)
0.84 (0.033)
0.9 (0.035)
60˚
3.0 (0.118)
2.2 (0.087)
16.5 (0.650)
0.6 (0.024)
Emitter/
2.0 (0.079)
2.8 (0.110)
0.4 (0.016)
16.0 (0.630)
17.27 (0.680)
1.22 (0.048)
2.9 (0.114)
R 0.7 (0.028)
0.84 (0.033)
3.9 (0.154)
0.3 (0.012)
0.7 (0.028)
0.64 (0.025)
0.84 (0.033)
1.6 (0.063)
1.4 (0.055)
1.3 (0.051)
1.1 (0.043)
ø5.6 (0.220)
ø5.3 (0.209)
2.54 (0.100)
spacing
ø4.8 (0.189)
E C B
(2.7 (0.106))
5.1 (0.201)
4.8 (0.189)
14.5 (0.571)
12.5 (0.492)
ø0.45 (0.018)
Radiant
GMOY6019
ø4.6 (0.181)
5.4 (0.213)
6.2 (0.244)
Chip position sensitive area
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
40
Figure 33 BPX 38 Figure 34 SFH 302, BP 103 Figure 35 SFH 305, SFH 405
Figure 36 BPX 81, LD 261 Figure 37 BPX 83, LD 263 Figure 38 BPX 90, BPX 90 F
Figure 39 BPW 33,
BPW 34, BPW 34 F, BPW 34 B, BPW 34 FA Figure 40 BPX 63, LD 242,
SFH 483, SFH 464
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
ø5.6 (0.220)
ø5.3 (0.209)
2.54 (0.100)
spacing
ø4.8 (0.189)
E C B
(2.7 (0.106))
5.3 (0.209)
5.0 (0.197)
14.5 (0.571)
12.5 (0.492)
ø0.45 (0.018)
Radiant
GMOY6018
Approx. weight 1.0 g
ø4.6 (0.181)
5.0 (0.197)
5.5 (0.217)
Chip position sensitive area
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
3.6 (0.142)
3.0 (0.118)
ø4.3 (0.169)
ø4.1 (0.161)
GETY6017
1.1 (0.043)
0.9 (0.035)
0.9 (0.035)
1.1 (0.043)
ø5.2 (0.205)
ø5.5 (0.217)
2.54 (0.100)
spacing
E C B
ø0.45 (0.018)
(2.7 (0.106))
Chip position sensitive area
Radiant
14.5 (0.571)
12.5 (0.492)
0.5 (0.020)
0.4 (0.016)
1.15 (0.045)
0.90 (0.035) 2.84 (0.112)
2.24 (0.088)
2.1 (0.083)
1.5 (0.059)
2.7 (0.106)
2.5 (0.098)
3.6 (0.142)
3.2 (0.126)
3.5 (0.138)
3.0 (0.118)
2.54 (0.100) spacing
1) Detaching area for tools,
flash not true to size.
GEOY6137
3.0 (0.118)
2.5 (0.098)
0...5˚
Collector (SFH 305)
Cathode (SFH 405)
1)
GEOY6021
2.4 (0.094)
2.1 (0.083)
0.7 (0.028)
0.6 (0.024)
Collector (BPX 81)
Cathode (LD 261)
2.54 (0.100) spacing
1.5 (0.059)
2.1 (0.083)
2.7 (0.106)
2.5 (0.098)
3.2 (0.126)
3.6 (0.142)
3.0 (0.118)
3.5 (0.138)
1.9 (0.075)
1.7 (0.067)
position
Chip
0.25 (0.010)
0.15 (0.006)
1.4 (0.055)
1.0 (0.039)
A
A
0.4
0.5 (0.020)
0.4 (0.016)
Radiant sensitive area
(0.4 x 0.4)
Detaching area for tools, flash not true to size.1)
5˚...0
GEOY6367
7.4 (0.291)
7.0 (0.276)
0.7 (0.028)
0.6 (0.024)
Collector (BPX 83)
Cathode (LD 263)
2.54 (0.100)
spacing 1.5 (0.059)
2.1 (0.083)
2.7 (0.106)
2.5 (0.098)
3.2 (0.126)
3.6 (0.142)
3.0 (0.118)
3.5 (0.138)
1.9 (0.075)
1.7 (0.067)
position
Chip
0.25 (0.010)
0.15 (0.006)
0... 5˚
1.4 (0.055)
1.0 (0.039)
A
0.4
0.4 (0.016)
0.5 (0.020)
A
2.3 (0.091)
2.0 (0.079)
0.8 (0.031)
0.6 (0.024)
4.5 (0.177)
4.3 (0.169)
5.4 (0.213)
4.9 (0.193)
0.35 (0.014)
0.20 (0.008)
0.4 (0.016)
2.2 (0.087)
1.9 (0.075)
3.5 (0.138)
3.0 (0.118)
1.8 (0.071)
Cathode
GEOY6014
5.08 (0.200)
spacing
0.6 (0.024)
Photosensitive Area
2.0 (0.079)
0.6 (0.024)
0.8 (0.031)
0.3 (0.012)
0.5 (0.020)
0.6 (0.024)
0.4 (0.016) 0...5˚
GEOY6643
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
ø4.3 (0.169)
ø4.1 (0.161)
Chip position
3.6 (0.142)
3.0 (0.118)
2.54 (0.100)
spacing
GETY6625
1
Anode
Cathode (SFH 483)
(LD 242, BPX 63, SFH 464)
14.5 (0.571)
12.5 (0.492)
ø0.45 (0.018)
2.7 (0.106)
0.9 (0.035)
1.1 (0.043)
0.9 (0.035)
1.1 (0.043)
ø5.5 (0.217)
ø5.2 (0.205)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
41
Figure 41 SFH 206 K Figure 42 SFH 203, SFH 203 FA,
LD 271 L/HL, SFH 415
Figure 43 SFH 203 P, SFH 203 PFA Figure 44 SFH 225 FA, SFH 235 FA Figure 45 SFH 205 F, SFH 205 FA
Figure 46 SFH 204 F, SFH 204 FA Figure 47 BP 104 F
Figure 48 SFH 216, SFH 400, SFH 480 Figure 49 BPX 65, SFH 402, SFH 482
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
6.9 (0.272)
6.3 (0.248)
0.8 (0.031)
4.0 (0.157)
34 (1.339)
32 (1.260)
1.8 (0.071)
1.2 (0.047)
0.8 (0.031)
0.4 (0.016)
2.54 (0.100)
spacing
0.6 (0.024) x 0.5 (0.020)
0.4 (0.016) x 0.3 (0.012)
4.1 (0.161)
3.7 (0.146)
5.1 (0.201)
4.7 (0.185)
Cathode
Area not flat Radiant sensitive area
GEOY6647
7.8 (0.307)
7.5 (0.295)
9.0 (0.354)
8.2 (0.323)
29 (1.142)
27 (1.063)
1.8 (0.071)
1.2 (0.047)
4.8 (0.189)
4.2 (0.165)
ø5.1 (0.201)
ø4.8 (0.189)
0.8 (0.031)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
Area not flat
Chip position
Cathode
GEOY6645
0.6 (0.024)
0.4 (0.016)
5.9 (0.232)
5.5 (0.217)
1.0 (0.039)
0.5 (0.020)
3.85 (0.152)
3.35 (0.132)
5.0 (0.197)
4.2 (0.165)
29 (1.142)
27 (1.063)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
0.4 (0.016)
ø5.1 (0.201)
ø4.8 (0.189)
Chip position
Area not flat
GEOY6648
Cathode
3.8 (0.150)
7.2 (0.283)
6.6 (0.260)
1.8 (0.071)
1.2 (0.047)
2.54 (0.100)
spacing
1.1 (0.043)
0.7 (0.028)
0.6 (0.024)
0.4 (0.016) 0.75 (0.030)
0.45 (0.018)
35.5 (1.398)
33.5 (1.319)
0.5 (0.020)
0.3 (0.012)
3.1 (0.122)
2.6 (0.102)
5.1 (0.201)
4.6 (0.181)
Photosensitive
area
GEOY6422
Cathode
Surface
not flat
6.9 (0.272)
6.3 (0.248)
4.0 (0.157)
34 (1.339)
32 (1.260)
1.8 (0.071)
1.2 (0.047)
0.8 (0.031)
0.4 (0.016)
2.54 (0.100)
spacing
4.1 (0.161)
3.7 (0.146)
5.1 (0.201)
4.7 (0.185)
Cathode
Area not flat
Radiant sensitive area
GEOY6651
0.4 (0.016)
0.6 (0.024) 0.5 (0.020)
0.3 (0.012)
GEOY6964
Chip position
Area not flat
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
0.8 (0.031)
spacing
2.54 (0.100)
Cathode
1.2 (0.047)
1.8 (0.071)
34.0 (1.339)
32.0 (1.260)
4.7 (0.185)
5.1 (0.201)
5.3 (0.205)
4.9 (0.193)
0.3 (0.012)
0.5 (0.020)
6.3 (0.248)
5.7 (0.224)
3.8 (0.150)
GEOY6075
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
1.8 (0.071)
ø5.6 (0.220)
ø5.3 (0.209)
2.54 (0.100)
spacing
ø0.45 (0.018)
Cathode (SFH 480)
2.7 (0.106)
14.5 (0.571)
12.5 (0.492)
5.3 (0.209)
5.0 (0.197)
ø4.8 (0.189)
ø4.6 (0.181)
GEOY6314
7.4 (0.291)
6.6 (0.260)
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
Anode
Radiant
Sensitive area
Chip position (SFH 216, SFH 400)
5.5 (0.217)
5.0 (0.197)
ø5.3 (0.209)
ø5.0 (0.197)
GETY6013
Chip position
Cathode (SFH 402, BPX 65)
Anode (SFH 482)
0.9 (0.035)
1.1 (0.043)
0.9 (0.035)
1.1 (0.043)
ø5.3 (0.209)
ø5.6 (0.220)
2.54 (0.100)
spacing
14.5 (0.571)
12.5 (0.492)
ø4.6 (0.181)
ø4.8 (0.189)
sensitive area
Radiant
(2.7 (0.106))
ø0.45 (0.018)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
42
Figure 50 BPW 21, BPX 61 Figure 51 SFH 221
Figure 52 BPX 48, BPX 48 F Figure 53 SFH 530
Figure 54 SFH 9300 Figure 55 SFH 9301
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
ø0.45 (0.018) Cathode
3.4 (0.134)
3.0 (0.118) 14.5 (0.571)
12.5 (0.492)
5.08 (0.200)
spacing
ø6.0 (0.236)
ø5.8 (0.228)
sensitive area
GMOY6011
1.75 (0.069)
1.55 (0.061)
Chip position
ø9.5 (0.374)
ø9.0 (0.354)
ø8.0 (0.315)
ø8.3 (0.327)
0.3 (0.012) max
0.85 (0.033)
0.65 (0.026)
1.0 (0.039)
0.8 (0.031)
Radiant
2.0 (0.079)
Chip position
3.4 (0.134)
3.0 (0.118)
0.3 (0.012) max
14.5 (0.571)
12.5 (0.492)
ø6.0 (0.236)
ø5.8 (0.228)
ø8.3 (0.327)
ø8.0 (0.315)
ø0.45 (0.018)
5.08 (0.200)
spacing
Anode B
Isolated cathode
Anode A Metal case
GMOY6639
Radiant sensitive area
ø9.5 (0.374)
ø9.0 (0.354)
0.09 (0.004)
Radiant sensitive area
Diode system
2.0 (0.079) x 1.67 (0.066) each
0.85 (0.033)
0.65 (0.026)
1.0 (0.039)
0.8 (0.031)
4.05 (0.159)
3.75 (0.148)
0.5 (0.020)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
2.54 (0.100)
7.8 (0.307)
7.4 (0.291) 6.6 (0.260)
6.3 (0.248)
0.3 (0.012)
0.25 (0.010)
0.8 (0.031)
2.2 (0.087)
1.9 (0.075)
3.5 (0.138)
3.0 (0.118)
7.62 (0.300) spacing
1.10 (0.043) 0.09 (0.004)
0.4 (0.016)
2.45 (0.096)
2.54 (0.100)
1.85 (0.073)
2.25 (0.089)
cathode
anode
Radiant sensitive area
GEOY6638
Diode system
2.0 (0.079) x 0.67 (0.026)
0.6 (0.024)
0.5 (0.020)
0.7 (0.028)
0...5˚
GEOY6954
9.3 (0.366)
8.3 (0.327)
ø6.2 (0.244)
ø6.5 (0.256)
15 (0.591)
13 (0.512)
((1.8) (0.071))
((2.4) (0.094))
2.5 (0.098)
2.0 (0.079)
Chip position
0.9 (0.035)
0.7 (0.028)
3.6 (0.142)
3.6 (0.142)
9.0 (0.354)
9.5 (0.374)
0.75 (0.030)
0.55 (0.022)
OUT
V
GND
S
6.3 (0.248)
6.7 (0.264)
spacing
spacing
GPXY6986
3.78 (0.149)
3.52 (0.139)
10.80 (0.425)
10.54 (0.415)
3.31 (0.130)
2.81 (0.111)
10.55 (0.415)
10.05 (0.396)
optical axis
0.5 (0.020)
0.3 (0.012)
7.82 (0.308)
7.42 (0.292)
6.6 (0.260)
6.1 (0.240)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
12.05 (0.474)
11.55 (0.455)
6.0 (0.236)
6.6 (0.260)
2.75 (0.108)
3.25 (0.128)
2.35 (0.093)
1.85 (0.073)
Emitter
CollectorCathode
Anode
LED
(clear encapsulation) (black encapsulation)
Phototransistor
Pin Configuration
(top view)
3.38 (0.133)
2.98 (0.117)
12.52 (0.493)
12.12 (0.477)
11.0 (0.433)
10.6 (0.417)
optical axis
8.2 (0.323)
8.0 (0.315)
6.68 (0.263)
6.28 (0.247)
2.54 (0.100)
9.0 (0.354)
0.25 (0.010)
Emitter Sensor
GPXY6992
1
2
4
3
Circuitry
2.74 (0.108)
2.34 (0.092)
8.0 (0.315)
5.0 (0.197)
0.6 (0.024)
0.4 (0.016)
0.3 (0.012)
0.5 (0.020)
8.2 (0.323)
0.25 (0.010)
1.27 (0.050)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
43
Figure 56 SFH 9302 Figure 57 SFH 9303
Figure 58 SFH 9304 Figure 59 SFH 9305
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
GPXY6993
19.2 (0.756)
18.8 (0.740)
24.85 (0.978)
24.45 (0.963)
Emitter Sensor
1
2Circuitry
4
3
12.52 (0.493)
12.12 (0.477)
3.38 (0.133)
2.98 (0.117)
2.34 (0.092)
2.74 (0.108)
10.6 (0.417)
11.0 (0.433)
8.0 (0.315)
5.0 (0.197)
8.2 (0.323)
8.0 (0.315)
0.3 (0.012)
0.5 (0.020)
optical axis
6.28 (0.247)
6.68 (0.263)
0.25 (0.010)
2.54 (0.100)
0.4 (0.016)
0.6 (0.024)
8.2 (0.323)
9.0 (0.354)
1.27 (0.050)
0.25 (0.010)
3.28 (0.129)
3.08 (0.121)
GPXY6994
Emitter Sensor Circuitry
2
1 4
3
2.74 (0.108)
2.34 (0.092)
3.38 (0.133)
2.98 (0.117)
12.52 (0.493)
12.12 (0.477)
5.0 (0.197)
0.3 (0.012)
0.5 (0.020)
8.2 (0.323)
8.0 (0.315)
optical axis
6.28 (0.247)
6.68 (0.263)
9.0 (0.354)
8.2 (0.323)
0.25 (0.010)
0.4 (0.016)
0.6 (0.024)
2.54 (0.100)
3.28 (0.129)
3.08 (0.121)
1.27 (0.050)
0.25 (0.010)
18.75 (0.738)
18.25 (0.719)
15.9 (0.626)
15.4 (0.606)
11.0 (0.433)
8.0 (0.315)
10.6 (0.417)
GPXY6995
3.28 (0.129)
3.08 (0.121)
15.9 (0.626)
15.4 (0.606)
18.75 (0.738)
18.25 (0.719)
Emitter Sensor Circuitry
2
1 4
3
3.38 (0.133)
2.98 (0.117)
12.52 (0.493)
12.12 (0.477)
10.6 (0.417)
11.0 (0.433)
8.0 (0.315)
5.0 (0.197)
0.3 (0.012)
0.5 (0.020)
8.2 (0.323)
8.0 (0.315)
2.74 (0.108)
2.34 (0.092)
6.28 (0.247)
6.68 (0.263)
optical axis
0.4 (0.016) 2.54 (0.100)
0.6 (0.024)
0.25 (0.010)
8.2 (0.323)
9.0 (0.354)
1.27 (0.050)
0.25 (0.010)
GPXY6996
3.28 (0.129) optical axis
2.54 (0.100)
1
2
4
3
±0.2 (0.008)
±0.2 (0.008)
12.02 (0.473)
±0.2 (0.008)
15.75 (0.620)
6.25 (0.246)
±0.2 (0.008)
(13.1 (0.516))
±0.1 (0.004)
8.55 (0.337)
0.4 (0.016)
±0.1 (0.004)
±0.2 (0.008)
6.2 (0.244)
±0.1 (0.004)
0.66 (0.026)
±0.4 (0.016)
3.5 (0.138)
(0.5 (0.020))
Pin 2
Emitter Sensor
Circuitry
±0.2 (0.008)
1 (0.039)
±0.1 (0.004)
1.27 (0.050)
3 (0.118)
±0.1 (0.004)
18.45 (0.726)
±0.2 (0.008)
9.3 (0.366)
±0.2 (0.008)
Pin 1
Pin 3
Pin 4
±0.1 (0.004)
4.37 (0.172)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
44
Figure 60 SFH 9306 Figure 61 SFH 9310
Figure 62 SFH 9330 Figure 63 SFH 9500
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
GPXY6997
1.1 (0.043)
Emitter Sensor
0.9 (0.035)
Circuitry
2
1 4
3
12.52 (0.493)
12.12 (0.477)
3.38 (0.133)
2.98 (0.117)
11.0 (0.433)
10.6 (0.417)
8.0 (0.315)
2.34 (0.092)
2.74 (0.108)
5.0 (0.197)
0.5 (0.020)
0.3 (0.012)
8.2 (0.323)
8.0 (0.315)
optical axis
6.68 (0.263)
6.28 (0.247)
0.25 (0.010)
2.54 (0.100)
0.6 (0.024)
0.4 (0.016)
9.0 (0.354)
8.2 (0.323)
1.27 (0.050)
0.25 (0.010)
GPXY6010
Emitter Sensor
14.0 (0.551)
14.4 (0.567)
10.5 (0.413)
10.1 (0.398)
4.8 (0.189)
5.2 (0.205)
3.5 (0.138)
7.8 (0.307)
Optical axis
5.8 (0.228)
6.2 (0.244)
2.74 (0.108)
2.34 (0.092)
8.0 (0.315)
10.5 (0.413)
10.1 (0.398)
2.0 (0.079)
0.5 (0.020)
0.3 (0.012)
7.7 (0.303)
2.5 (0.098)
0.4 (0.016)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
Circuitry
2
1
3
4
Marking
this side
4
32
1
2.54 (0.100)
3.38 (0.133)
2.98 (0.117)
12.52 (0.493)
12.12 (0.477)
11.0 (0.433)
10.6 (0.417)
optical axis
8.2 (0.323)
8.0 (0.315)
6.68 (0.263)
6.28 (0.247)
2.54 (0.100)
9.0 (0.354)
0.25 (0.010)
Emitter Sensor
GPXY6052
2.74 (0.108)
2.34 (0.092)
8.0 (0.315)
5.0 (0.197)
0.6 (0.024)
0.4 (0.016)
0.3 (0.012)
0.5 (0.020)
8.2 (0.323)
0.25 (0.010)
1.27 (0.050)
1
Circuitry
4
32
GPXY6988
5.2 (0.205)
4.9 (0.193)
13.65 (0.537)
13.25 (0.522)
2.2 (0.087)
7.1 (0.280)
6.9 (0.272)
8.0 (0.315)
10.2 (0.402)
9.80 (0.386)
2.05 (0.081)
1.85 (0.073)
6.1 (0.240)
5.9 (0.232)
15.6 (0.614)
0...0.1 (0...0.004)
0.5 (0.020)
0.3 (0.012)
5.1 (0.201)
4.9 (0.193)
6.7 (0.264)
6.9 (0.272)
0.9 (0.035)
1.1 (0.043)
3.8 (0.150)
4.0 (0.157)
0.8 (0.031)
0.6 (0.024)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
6.0 (0.236)
6.2 (0.244)
Pin 3Pin 2
Pin 4Pin 1
0.4 (0.016)
0.6 (0.024)
Emitter Sensor
3
41
2Circuitry
Optical axis
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
45
Figure 64 SFH 9340, SFH 9341 Figure 65 SFH 9201, SFH 9202,
SFH 9240, SFH 9241,
SFH 9260
Figure 66 SFH 420, SFH 4211, SFH 421 Figure 67 SFH 4200
Figure 68 SFH 4203 Figure 69 SFH 4205
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
SensorEmitter
7.8 (0.307)
0.25 (0.100)
1.27 (0.050)
0.3 (0.012)
0.5 (0.020)
8.4 (0.331)
12.52 (0.493)
12.12 (0.477)
8.0 (0.315)
2.34 (0.092)
2.74 (0.108)
11.0 (0.433)
10.6 (0.417)
3.38 (0.133)
2.98 (0.117)
Optical Axis
2.54 (0.100)
0.25 (0.010)
0.4 (0.016)
0.6 (0.024)
6.68 (0.263)
6.28 (0.247)
8.2 (0.323)
9.0 (0.354)
1
2
GPX06012
Circuitry )
5 (GND)
4 (OUT)
3
DD
V
(Pin 2
Pin 1 Pin 4
Pin 5
Pin 3
5.0 (0.197)
1.27 (0.050)
3.4 (0.134)
3.0 (0.118)
5.8 (0.228)
6.2 (0.244)
0.15 (0.006)
0.13 (0.005)
0...0.1
1.27 (0.050) spacing
2.1 (0.083)
1.7 (0.067)
4
6
1
3
GEOY6840
4.2 (0.165)
3.8 (0.150)
0.3 (0.012)
0.5 (0.020)
25
(0...0.004)
Type
1234 56
SFH 9201,
SFH 9202,
SFH 9260
Anode – Emitter Collector – Cathode
SFH 9240,
SFH 9241
Anode OUT VCC – GND Cathode
GPLY6724
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Cathode marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
GPLY6059
(typ) 0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Anode marking
3.0 (0.118)
3.4 (0.134)
(2.4 (0.094))
0.1 (0.004)
4˚±1
GPLY6928
0.8 (0.031)
1.0 (0.039) 0.05 (0.002)
0.15 (0.006)
1.4 (0.055)
1.2 (0.047)
2.1 (0.083)
2.1 (0.083)
2.3 (0.091)
1.3 (0.051)
Cathode marking
0.5 (0.020)
0.3 (0.012)
Cathode
marking
Light emitting area
typ. 1.5 (0.059) x 1.0 (0.039)
1.5 (0.059)
1.2 (0.047)
0.8 (0.031)
+0.05 (0.002)
1.0 (0.039)
1.9 (0.075)
1.5 (0.059)
GPLY6060
1.1 (0.043)
0.9 (0.035)
2.54 (0.100)
spacing
(2.4 (0.094))
2.8 (0.110)
2.4 (0.094)
4.2 (0.165)
3.8 (0.150)
(2.85 (0.112))
0.7 (0.028)
4.2 (0.165)
3.8 (0.150)
(2.9 (0.114))
3.8 (0.150)
3.4 (0.134)
(R1)
Anode marking
Anode Cathode
(1.4 (0.055))
(0.3 (0.012))
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
46
Figure 70 SFH 4580, SFH 4500 Figure 71 SFH 4585, SFH 4505
Figure 72 SFH 7222 Figure 73 SFH 487, SFH 4301, SFH 409
Figure 74 SFH 4501 Figure 75 SFH 4502
Figure 76 SFH 4503 Figure 77 SFH 495 P
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
GEOY6960
3.9 (0.154)
4.5 (0.177)
Cathode
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
13.1 (0.516)
14.7 (0.579)
5.5 (0.217)
7.5 (0.295)
1.95 (0.077)
2.05 (0.081)
R((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
(-0.004...0.004)
3.7 (0.146)
3.3 (0.130)
2.7 (0.106)
2.3 (0.091)
Chip position
3.9 (0.154)
4.5 (0.177)
-0.1...0.1
GEOY6961
3.9 (0.154)
4.5 (0.177)
Cathode
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
14.7 (0.579)
15.5 (0.610)
7.4 (0.291)
8.0 (0.315) ((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
R2.05 (0.081)
1.95 (0.077)
Chip position
3.9 (0.154)
4.5 (0.177)
(-0.006...0.006)
-0.15...0.15
GPLY6025
AC
CA
32
41
0.4 (0.016)
0.6 (0.024)
0.18 (0.007)
0.12 (0.005)
0.1 (0.004) typ
0.5 (0.020)
1.1 (0.043)
3.7 (0.146)
3.3 (0.130)
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.6 (0.024)
0.8 (0.031)
2.3 (0.091)
2.1 (0.083)
2.6 (0.102)
3.0 (0.118)
3.0 (0.118)
3.4 (0.134)
(2.4 (0.094))
Package marking
IRED LED
6.3 (0.248)
5.9 (0.232)
4.1 (0.161)
3.9 (0.154)
5.2 (0.205)
4.5 (0.177)
Chip position
GEXY6250
Cathode
Anode (SFH 487, SFH 4301)
(SFH 409, SFH 4332)
4.0 (0.157)
3.6 (0.142)
0.4 (0.016)
0.7 (0.028)
0.8 (0.031)
0.4 (0.016)
0.4 (0.016)
Area not flat
1.2 (0.047)
1.8 (0.071)
29 (1.142)
27 (1.063)
ø3.1 (0.122)
ø2.9 (0.114)
(3.5 (0.138))
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing
2.54 (0.100)
spacing
27.5 (1.083)
29.5 (1.161)
1.2 (0.047)
1.8 (0.071) Anode 0.4 (0.016)
0.6 (0.024)
GEXY6952
8.2 (0.323)
9.0 (0.354)
7.5 (0.295)
7.8 (0.307)
0.8 (0.031)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
Area not flat
5.5 (0.217)
5.9 (0.232)
ø4.8 (0.189)
ø5.1 (0.201)
GEXY6718
Anode Anode
spacing
2.54 (0.100)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
Area not flat
1.8 (0.071)
1.2 (0.047)
29.0 (1.142)
27.0 (1.063) 9.0 (0.354)
8.2 (0.323)
ø5.1 (0.201)
ø4.8 (0.189)
7.8 (0.307)
7.5 (0.295) 5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
Anode
GEXY6048
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047)
Chip position
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.4 (0.016)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
GEXY6971
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
4.2 (0.165)
5.0 (0.197)
27.0 (1.063)
29.0 (1.142)
ø5.1 (0.201)
ø4.8 (0.189)
3.85 (0.152)
3.35 (0.132)
1.8 (0.071)
1.2 (0.047)
0.8 (0.031)
0.4 (0.016)
0.4 (0.016)
0.6 (0.024)
2.54 (0.100)
spacing
Chip positionArea not flat
Anode
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
47
Figure 78 IRL 80 A, IRL 81 A Figure 79 SFH 484
Figure 80 SFH 486 Figure 81 SFH 485
Figure 82 SFH 485 P Figure 83 SFH 487 P
Figure 84 LD 274 Figure 85 LD 271, LD 271 H
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
16.51 (0.650)
16.00 (0.630) 5.84 (0.230)
5.59 (0.220)
1.29 (0.051)
1.14 (0.045)
1.52 (0.060) 1.52 (0.060)
1.52 (0.060)
2.54 (0.100)
spacing
0.64 (0.025)
0.46 (0.018)
2.34 (0.092)
2.08 (0.082)
4.57 (0.180)
4.32 (0.170)
2.54 (0.100)
2.03 (0.080)
1.70 (0.067)
1.45 (0.057)
0.64 (0.025)
0.46 (0.018)
R = 0.76 (0.030)
Anode Plastic marking
GEOY6461
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047) Chip position
GEXY6271
Cathode
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.5 (0.020)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
2.54 (0.100)
spacing
5.2 (0.205)
5.8 (0.228)
Chip position
28.0 (1.102)
30.0 (1.181)
1.2 (0.047)
1.8 (0.071)
Anode
0.4 (0.016)
0.6 (0.024)
GEXY6626
8.2 (0.323)
9.0 (0.354)
7.5 (0.295)
7.8 (0.307)
0.8 (0.031)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
Area not flat
5.5 (0.217)
5.9 (0.232)
ø4.8 (0.189)
ø5.1 (0.201)
ø5.1 (0.201)
ø4.8 (0.189)
7.8 (0.307)
7.5 (0.295)
9.0 (0.354)
8.2 (0.323)
4.8 (0.189)
4.2 (0.165)
1.5 (0.059)
Chip position
GEXY6305
Cathode
spacing
2.54 (0.100)
0.4 (0.016)
0.6 (0.024)
27 (1.063)
29 (1.142)
0.5 (0.020)
0.8 (0.031)
Area not flat
0.4 (0.016)
0.6 (0.024)
5.5 (0.217)
5.9 (0.232)
5.9 (0.232)
5.5 (0.217)
ø5.1 (0.201)
ø4.8 (0.189)
2.54 (0.100)
spacing
3.85 (0.152)
3.35 (0.132)
5.0 (0.197)
4.2 (0.165)
1.0 (0.039)
0.5 (0.020)
Chip position
GEXY6306
Cathode
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
0.4 (0.016)
29 (1.142)
27 (1.063)
1.8 (0.071)
1.2 (0.047)
Area not flat
0.6 (0.024)
0.4 (0.016)
1.8 (0.071)
1.2 (0.047) 29 (1.142)
27 (1.063) 4.5 (0.177)
4.0 (0.157)
3.5 (0.138)
2.0 (0.079)
1.7 (0.067)
3.1 (0.122)
2.5 (0.098)
2.54 (0.100)
spacing
ø3.1 (0.122)
ø2.9 (0.114)
0.8 (0.031)
0.6 (0.024)
0.4 (0.016) 4.0 (0.157)
3.6 (0.142)
0.6 (0.024)
0.4 (0.016)
Chip position
Area not flat
GEXY6308
0.7 (0.028)
0.4 (0.016)
Cathode
0.4 (0.016)
Cathode
GEXY6051
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047)
Chip position
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.4 (0.016)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
4.8 (0.189)
4.2 (0.165)
11.4 (0.449)
11.0 (0.433)
14.0 (0.051)
13.0 (0.512)
1.3 (0.051)
1.0 (0.039)
Cathode
Chip position
GEXY6239
1.0 (0.039)
0.7 (0.028)
spacing
2.54 (0.100)
1.2 (0.047)
1.8 (0.071)
0.4 (0.016)
0.6 (0.024) Area not flat
8.2 (0.323)
9.0 (0.354)
7.8 (0.307)
7.5 (0.295)
ø5.1 (0.201)
ø4.8 (0.189)
5.5 (0.217)
5.9 (0.232)
0.4 (0.016)
0.6 (0.024)
SI-FOTODETEKTOREN, OPTISCHE SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS
UND IR-LUMINESZENZDIODEN AND INFRARED EMITTERS
48
Figure 86 SFH 460 Figure 87 SFH 4860
Figure 88 SFH 401, SFH 481 Figure 89 SFH 4281
Figure 90 SFH 425, SFH 426
Maßbilder in mm (inch) Outline Drawings dimensions in mm (inch)
Cathode
7.4 (0.291)
6.6 (0.260)
glass lens
GETY6090
Chip position
2.7 (0.106)
ø0.45 (0.018)
spacing
2.54 (0.100)
5.3 (0.209)
5.0 (0.197)
12.5 (0.492)
14.5 (0.571)
ø4.8 (0.189)
ø4.6 (0.181)
ø5.6 (0.220)
ø5.3 (0.209)
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
ø4.8 (0.189)
2.7 (0.106)
GMOY6983
ø4.6 (0.181)
4.05 (0.159)
3.45 (0.136)
Chip position
14.5 (0.571)
12.5 (0.492)
ø0.45 (0.018)
spacing
Cathode
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
5.5 (0.217)
5.2 (0.205)
2.54 (0.100)
Flat glass cap
ø2.54 (0.100)
5.3 (0.209)
5.0 (0.197) 6.4 (0.252)
5.6 (0.220)
ø4.8 (0.189)
glass
lens
welded
Anode
Cathode = SFH 481
= SFH 401
GETY6091
(package)
ø4.6 (0.181)
1.1 (0.043)
0.9 (0.035)
0.9 (0.035)
1.1 (0.043)
ø5.3 (0.209)
ø5.6 (0.220)
spacing
2.54 (0.100)
ø0.45 (0.018)
(2.7 (0.106)) Chip position
12.5 (0.492)
14.5 (0.571)
GPLY6899
0...0.1 (0.004)
Cathode marking
4˚±1
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
3.4 (0.134)
3.0 (0.118)
(2.4 (0.094))
2.1 (0.083)
1.7 (0.067)
5.4 (0.213)
5.0 (0.197)
0.6 (0.024)
0.4 (0.016)
0.3 (0.012) min
0.3 (0.012) max
1.0 (0.039)
0.9 (0.035)
GPLY6880
(R1)
Cathode marking
Cathode Anode
(2.4 (0.094))
2.8 (0.110)
2.4 (0.094)
4.2 (0.165)
3.8 (0.150)
0.9 (0.035)
1.1 (0.043)
spacing
2.54 (0.100)
0.7 (0.028)
(2.85 (0.112))
(1.4 (0.055))
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
3.8 (0.150)
4.2 (0.165)
(2.9 (0.114))
