Mimix Broadband's three stage 27.0-31.0 GHz GaAs MMIC
power amplifier has a small signal gain of 21.0 dB with
+35.5 dBm saturated output power. The device also
includes Lange couplers to achieve good input/output
return loss. This MMIC uses Mimix Broadband’s GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Ka-Band 4 W Power Amplifier
Balanced Design Provides Good Input/Output Match
21.0 dB Small Signal Gain
+35.5 dBm Saturated Output Power
+43.0 dBm Output Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+6.0 VDC2
325,825,1575 mA
+0.3 VDC
+25 dBm
-65 to +165 ºC
-55 to +85 ºC
175 ºC
Chip Device Layout
Page 1 of 11
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
P1027-BD
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)2
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Saturated Output Power (Psat)2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.5V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
mA
mA
Min.
27.0
-
-
-
-
-
-
-
-
-
-1.0
-
-
-
Typ.
-
20.0
20.0
21.0
+/-1.0
50.0
+34.5
+43.0
+35.5
+5.5
-0.7
250
625
1185
Max.
31.0
-
-
-
-
-
-
-
-
+5.8
0.0
300
750
1435
(2) Measured on wafer pulsed.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Page 2 of 11
P1027-BD
Power Amplifier Measurements (On-Wafer1)
Note [1] Measurements – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um
in from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
XP1027-BD Vd=5.0 V, Vg=-0.7 V, Id1=221 mA
Id2=551 mA, Id3=1045 mA
16
17
18
19
20
21
22
23
24
25
26
25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency (GHz)
Gain (dB)
XP1027-BD Vd=5.0 V, Vg=-0.7 V, Id1=221 mA
Id2=551 mA, Id3=1045 mA
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Gain/Reverse Isolation (dB)
XP1027-BD Vd=5.0 V, Vg=-0.7 V, Id1=221 mA
Id2=551 mA, Id3=1045 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency (GHz)
Input Return Loss (dB)
XP1027-BD Vd=5.0 V, Vg=-0.7 V, Id1=221 mA
Id2=551 mA, Id3=1045 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Input Return Loss (dB)
XP1027-BD Vd=5.0 V, Vg=-0.7 V, Id1=221 mA
Id2=551 mA, Id3=1045 mA
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency (GHz)
Output Return Loss (dB)
XP1027-BD Vd=5.0 V, Vg=-0.7 V, Id1=221 mA
Id2=551 mA, Id3=1045 mA
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Output Return Loss (dB)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Page 3 of 11
P1027-BD
Power Amplifier Measurements (On-Wafer1) (cont.)
Note [1] Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
XP1027-BD Vd=6.0 V, Vg=-0.6 V, Id1=312 mA
Id2=791 mA, Id3=1549 mA
30
31
32
33
34
35
36
37
38
39
40
27.0 28.0 29.0 30.0 31.0 32.0 33.0
XP1027-BD Vd=6.0 V, Vg=-0.6 V, Id1=312 mA
Id2=791 mA, Id3=1549 mA
0
2
4
6
8
10
12
14
16
18
20
22
24
26
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
28 GHz 29 GHz 30 GHz 31 GHz 32 GHz
XP1027-BD Vd=6.0 V, Vg=-0.6 V, Id1=312 mA
Id2=791 mA, Id3=1549 mA, Freq=30 GHz
0
200
400
600
800
1000
1200
1400
1600
1800
2000
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
Id1, Id2 and Id3 (mA)
Id1 Id2 Id3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Page 4 of 11
P1027-BD
Power Amplifier Measurements (On-Wafer1) (cont.)
Note [1] Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
XP1027-BD Vd=5.5 V, Vg=-1.0 V to -0.6 V
Pin=+13 dBm to +9 dBm, Pulsed
30
31
32
33
34
35
36
37
38
39
40
27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency (GHz)
Output Power Psat (dBm)
XP1027-BD Vd=6.0 V, Vg=-1.0 V to -0.6 V
Pin=+13 dBm to +9 dBm, Pulsed
30
31
32
33
34
35
36
37
38
39
40
27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency (GHz)
Output Power Psat (dBm)
XP1027-BD Vd=5.5 V, Vg=Varied, Pulsed, Freq=30 GHz
0
5
10
15
20
25
30
35
40
18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
Power Added Efficiency (%)
Vg=-1.0V, Id=1196 mA
Vg=-0.9V, Id=1491 mA
Vg=-0.8V, Id=1683 mA
Vg=-0.7V, Id=1944 mA
Vg=-0.6V, Id=2318 mA
XP1027-BD Vd=6.0 V, Vg=Varied, Pulsed, Freq=30 GHz
0
5
10
15
20
25
30
35
40
18 20 22 24 26 28 30 32 34 36 38
Output Power (dBm)
Power Added Efficiency (%)
Vg=-1.0 V, Id=1346 mA
Vg=-0.9V, Id=1496 mA
Vg=-0.8V, Id=1795 mA
Vg=-0.7V, Id=2019 mA
Vg=-0.6V, Id=2468 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Page 5 of 11
P1027-BD
Power Amplifier Measurements (On-Wafer1) (cont.)
Note [1] Measurements – On-Wafer Output Power data has been taken using bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge. For optimum performance Mimix T-pad transition and tuned output matching network is recommended. For additional
information see the Mimix “T-Pad Transition” application note. Contact technical sales for output matching network information.
Additional Data – The XP1027 device consists of a balanced XP1026 pair. See the XP1026 data sheet for additional data concerning OIP3 control and
optimization.
XP1027-BD Vd=5.0 V, Vg=-0.9 V, Id1=198 mA
35
36
37
38
39
40
41
42
43
44
45
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Output Power per Tone (dBm)
Output Third Order Intercept (dBm)
28 GHz 29 GHz 30 GHz 31 GHz 32 GHz
XP1027-BD Vd=5.5 V, Vg=-0.9 V, Id1=204 mA
35
36
37
38
39
40
41
42
43
44
45
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Output Power per Tone (dBm)
Output Third Order Intercept (dBm)
28 GHz 29 GHz 30 GHz 31 GHz 32 GHz
XP1027-BD Vd=6.0 V, Vg=-0.9 V, Id1=208 mA
35
36
37
38
39
40
41
42
43
44
45
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Output Power per Tone (dBm)
Output Third Order Intercept (dBm)
28 GHz 29 GHz 30 GHz 31 GHz 32 GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Page 6 of 11
P1027-BD
Power Amplifier Measurements (Text Fixture1)
Note [1] Measurements – Test Fixture data includes all bond wire parasitics, uncompensated RF In/Out Mimix T-Pad transitions and RF ceramic
circuit losses. For Gain and Output Power curves RF In/Out circuit losses have been removed.
XP1027-BD Vd=6.0 V, Vg=-0.7 V
16
17
18
19
20
21
22
23
24
25
26
27
28
25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency GHz)
Gain (dB)
+85 deg C -40 deg C +25 deg C
XP1027-BD Vd=6.0 V, Vg=-0.7 V
-25
-20
-15
-10
-5
0
25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency GHz)
Input Return Loss (dB)
+85 deg C -40 deg C +25 deg C
XP1027-BD Vd=6.0 V, Vg=-0.7 V
-35
-30
-25
-20
-15
-10
-5
0
25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0
Frequency GHz)
Output Return Loss (dB)
+85 deg C -40 deg C +25 deg C
XP1027-BD Vd=6.0 V, Vg=-0.7 V
29
30
31
32
33
34
35
36
37
38
39
27.0 27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0 32.5
Frequency (GHz)
Output Power Psat (dBm)
+85 deg C -40 deg C +25 deg C
XP1027-BD Vd=6.0 V, Vg=-0.7 V
29
30
31
32
33
34
35
36
37
38
39
27.0 27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0 32.5
Frequency (GHz)
Output Power P1dB (dBm)
+85 deg C -40 deg C +25 deg C
XP1027-BD Vd=6.0 V, Vg=-0.7 V, Pulsed
29
30
31
32
33
34
35
36
37
38
39
27.0 27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0
Frequency (GHz)
Output Power Psat (dBm)
+85 deg C -40 deg C +25 deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Page 7 of 11
P1027-BD
S-Parameters (On-Wafer1)
Typcial S-Parameter Data for XP1027-BD
Vd=5.0 V, Id=1817 mA
Frequency S11 S11 S21 S21 S12 S12 S22 S22
(
GHz
)
(
Ma
g)
(
An
g)
(
Ma
g)
(
An
g)
(
Ma
g)
(
An
g)
(
Ma
g)
(
An
g)
( )
( g)
( g)
( g)
( g)
( g)
( g)
( g)
( g)
20.0 0.095 -161.19 0.018 141.50 0.0014 24.88 0.028 33.51
21.0 0.094 -176.82 0.030 145.61 0.0010 17.35 0.040 -2.58
22.0 0.081 167.19 0.053 145.02 0.0016 21.04 0.063 -39.25
23.0 0.056 150.22 0.133 149.82 0.0026 1.17 0.085 -71.83
24.0 0.021 156.80 0.609 127.34 0.0024 -30.49 0.077 -103.77
25.0 0.034 -112.97 2.829 60.25 0.0025 -64.53 0.041 -158.29
26.0 0.075 -132.74 8.859 -42.86 0.0025 -101.60 0.056 -35.72
27 0
172 62
13 061
157 41
0 0020
133 14
81 64
27
.
0
.
-
172
.
62
13
.
061
-
157
.
41
0
.
0020
-
133
.
14
.
-
81
.
64
28.0 0.033 -154.36 12.733 107.23 0.0011 -154.87 0.115 -101.71
29.0 0.037 -96.19 11.810 25.72 0.0023 -162.26 0.104 -112.08
30.0 0.045 -117.39 11.733 -52.07 0.0029 161.25 0.075 -109.13
31.0 0.080 -80.63 11.822 -136.80 0.0022 89.92 0.118 -95.89
32.0 0.102 -90.30 9.329 125.72 0.0011 21.55 0.169 -115.52
33.0 0.144 -99.69 5.029 35.62 0.0003 165.09 0.150 -140.18
34.0 0.186 -116.62 2.256 -35.68 0.0007 11.33 0.070 -154.59
35.0 0.172 -135.02 1.078 -91.79 0.0006 -10.99 0.022 -60.02
36.0 0.132 -147.33 0.569 -143.33 0.0003 151.55 0.100 -66.42
37.0 0.093 -137.42 0.314 168.21 0.0008 161.82 0.194 -78.20
38.0 0.082 -98.95 0.177 122.89 0.0013 29.32 0.249 -89.91
39.0 0.125 -83.78 0.106 81.94 0.0006 -45.43 0.278 -105.81
40.0 0.213 -91.17 0.070 41.66 0.0009 41.42 0.244 -124.19
Note [1] S-Parameters – On-Wafer S-Parameters have been taken using reduced bias conditions as shown. Measurements are referenced 150 um in
from RF In/Out pad edge.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
RF In
RF Out
Vg3
Vg3
Vg2
Vg1
Vd3
Vd2
Vd1
1
2 3 4 5 6 7
8
91011
12
13
14
3.500
(0.138)
1
2 3 4 56 7
8
91011
12
13
0.961
(0.038)
1.361
(0.054)
1.761
(0.069)
2.561
(0.101)
3.361
(0.132)
2.961
(0.117)
2.561
(0.101)
1.761
(0.069)
1.361
(0.054)
0.961
(0.038)
0.0
0.0
1.274
(0.050)
14
2.961
(0.117)
3.361
(0.132)
2.226
(0.088)
4.000
(0.158)
Mechanical Drawing
(Note: Engineering designator is 30SPA0536)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
Most DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF and Vd3 Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 8.68 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1A)
Bond Pad #3 (Vd1A)
Bond Pad #4 (Vg2A)
Bond Pad #5 (Vd2A)
Bond Pad #6 (Vg3A)
Bond Pad #7 (Vd3A)
Bond Pad #8 (RF Out)
Bond Pad #9 (Vd3B)
Bond Pad #10 (Vg3B)
Bond Pad #11 Vd2B)
Bond Pad #12 (Vg2B)
Bond Pad #13 (Vd1B)
Bond Pad #14 (Vg1B)
Page 8 of 11
P1027-BD
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Layout for reference only – It is recommended to bias
output stage from both sides.
Bias Arrangement (See App Notes [1], [2] and [3])
Vd3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
Page 9 of 11
P1027-BD
27.0-31.0 GHz GaAs MMIC
Power Amplifier
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1
through Vd3 at Vd(1,2,3)=5.5V with Id1=250mA, Id2=625mA and Id3=1185mA.
Separate biasing is recommended if the amplifier is to be used in a linear application
or at high levels of saturation, where gate rectification will alter the effective gate
control voltage. For non-critical applications it is possible to parallel all stages and
adjust the common gate voltage for a total drain current Id(total)=2060mA.
[Linear Applications] - For applications where the amplifier is being used in linear
operation, where best IM3 (Third-Order Intermod) performance is required at more
than 5dB below P1dB, it is also recommended to use active gate biasing to keep the
drain currents constant as the RF power and temperature vary; this gives the best
performance and most reproducible results. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single
transistor or a low power operational amplifier, with a low value resistor in series with
the drain supply used to sense the current. The gate voltage of the pHEMT is
controlled to maintain correct drain current compensating for changes over
temperature.
[Saturated Applications] - For applications where the amplifier RF output power is saturated, the optimum drain current will vary with RF drive and
each amplifier stage is best operated at a constant gate voltage. Significant gate currents will flow at saturation and bias circuitry must allow for
drain current growth under this condition to achieve best RF output power and power added efficiency. Additionally, if the input RF power level will
vary significantly, a more negative gate voltage will result in less die heating at lower RF input drive levels where the absence of RF cooling becomes
significant. Note under this bias condition, gain will then vary with RF drive
NOTE! - For any application it is highly recommended to bias the output amplifier stage from both sides for best RF and thermal performance.
CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vg1,2,3) is available before applying the positive
drain supply (Vd1,2,3). Additionally, it is recommended that the device gates are protected with Silicon diodes to limit the applied voltage.
App Note [2] Bias Arrangement
[For Individual Stage Bias] (recommended for linear/saturated applications) - Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass
capacitance (100-200 pF) as close to the device as possible. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended. All DC pads
have been tied together on chip and device can be biased from either side.
[For Parallel Stage Bias] (general applications) - The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (100-200 pF)
are tied together at one point after bypass capacitance. Additional DC bypass capacitance (1 nF and 3.3 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.
NOTE! In either arrangement, for most stable performance all unused DC pads must also be bypassed with at least 100-200 pf capacitance.
App Note [3] Material Stack-Up – In addition to the practical aspects of bias and bias arrangement, device base
material stack-up also must be considered for best thermal performance. A well thought out thermal path solution
will improve overall device reliability, RF performance and power added efficiency. The photo shows a typical high
power amplifier carrier assembly. The material stack-up for this carrier is shown below. This stack-up is highly
recommended for most reliable performance however, other materials (i.e. eutectic solder vs epoxy, copper
tungsten/copper moly rib, etc.) can be considered/possibly used but only after careful review of material thermal
properties, material availability and end application performance requirements.
Copper Block
AuSn Eutectic Solder
Alumina Substrate
Diemat DM6030HK Epoxy, ~1mil
MOLY Carrier, 25mil
Au plated
MOLY Rib, 5mil, Au plated
MMIC, 4mil
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Page 10 of 11
P1027-BD
XP1027-BD Vd=6.0 V, Id1=200 mA
Id2=500 mA, Id3=1100 mA
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
MTTF (hours)
XP1027-BD Vd=6.0 V, Id1=200 mA
Id2=500 mA, Id3=1100 mA
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E+06
1.00E+07
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
FITS
XP1027-BD Vd=6.0 V, Id1=200 mA
Id2=500 mA, Id3=1100 mA
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
Rth (deg C/W)
XP1027-BD Vd=6.0 V, Id1=200 mA
Id2=500 mA, Id3=1100 mA
130
140
150
160
170
180
190
200
210
220
230
55 65 75 85 95 105 115 125
Backplate Temperature (deg C)
Tch (deg C)
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of die placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10
Page 11 of 11
P1027-BD
Handling and Assembly Information
Part Number for Ordering Description
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxy is Die Mat DM6030HK or an epoxy with >52 W/m ºK thermal
conductivity cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the
top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the
Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform,
approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.
The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The
work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The
collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are
critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
XP1027-BD-000V RoHS compliant die packed in vacuum release gel packs
XP1027-BD-EV1 XP1027-BD evaluation module
27.0-31.0 GHz GaAs MMIC
Power Amplifier
Ordering Information
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2010 - Rev 25-Jan-10