MS2290 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * * 1090 MHz 18 VOLTS Pout = 0.2 WATTS GP= 10 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: The MS2290 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit VCEO Collector-Emitter 20 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 3.5 V IC Collector Current 200 mA PD Total Device Dissipation 7.0 W -65 + 150 C 25 C/W Tstg Storage Temperature Range Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7122 Rev - 11-2002 MS2290 ELECTRICAL SPECIFICATIONS (Tcase = 25 25C) STATIC Symbol BVCEO BVCES BVCBO BVEBO ICBO HFE Test Conditions IC = 5.0 mA IC = 5.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 20 V VCE = 5.0 V IB = 0 mA VBE = 0mA IE = 0 mA IC = 0 mA IE = 0 mA IC = 100 mA Min. Value Typ. Max. Unit 20 50 50 3.5 --10 ------------- --------0.5 100 V V V V mA --- Min. Value Typ. Max. Unit 10 --- --- dB --- --- 5.0 pf DYNAMIC Symbol Test Conditions GPE f =1090 MHz POUT = 0.2 W COB f = 1.0 MHz VCB = 28 V VCE = 18V Icq = 100mA Conditions IMPEDANCE DATA Freq ZIN( ) ZCL( ) 1090 MHz 3.4 + j12 8.2 + j27 POUT = 200 mW VCE = 18 V 053-7122 Rev - 11-2002 VCE = 18 V MS2290 PACKAGE MECHANICAL DATA 053-7122 Rev - 11-2002