053-7122 Rev - 11-2002
MS2290
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
DESCRI
DESCRIDESCRI
DESCRIPTION:
PTION:PTION:
PTION:
The MS2290 is a common emitter, silicon NPN, microwave
transistor designed for Class A driver applications under
DME or IFF pulse conditions. This device is capable of
withstanding an infinite load VSWR at any phase angle
under rated conditions.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter 20 V
VCBO Collector-Base Voltage 50 V
VEBO Emitter-Base Voltage 3.5 V
IC Collector Current 200 mA
PD Total Device Dissipation 7.0 W
Tstg Storage Temperature Range -65 + 150 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 25 °
°°
°C/W
Features
FeaturesFeatures
Features
• 1090 MHz
• 18 VOLTS
• Pout = 0.2 WATTS
• GP= 10 dB MINIMUM
• CLASS A OPERATION
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• COMMON EMITTER CONFIGURATION
053-7122 Rev - 11-2002
MS2290
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCEO I
C = 5.0 mA IB = 0 mA 20 --- --- V
BVCES I
C = 5.0 mA VBE = 0mA 50 --- --- V
BVCBO I
C = 5.0 mA IE = 0 mA 50 --- --- V
BVEBO I
E = 1.0 mA IC = 0 mA 3.5 --- --- V
ICBO V
CB = 20 V IE = 0 mA --- --- 0.5 mA
HFE VCE = 5.0 V IC = 100 mA 10 --- 100 ---
DYNAMIC
DYNAMIC DYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
GPE f =1090 MHz POUT = 0.2 W VCE = 18 V 10 --- --- dB
COB f = 1.0 MHz VCB = 28 V --- --- 5.0 pf
Conditions VCE = 18V Icq = 100mA
IMPEDANCE DATA
IMPEDANCE DATA IMPEDANCE DATA
IMPEDANCE DATA
Freq ZIN(Ω
ΩΩ
Ω) ZCL(Ω
ΩΩ
Ω)
1090 MHz 3.4 + j12 8.2 + j27
POUT = 200 mW
VCE = 18 V
053-7122 Rev - 11-2002
MS2290
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
