FEATURES
SILICON RFIC LOW
CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
• SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
• HIGH EFFICIENCY:
PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz
PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz
PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz
• POWER GAIN:
GP = 13.5 dB TYP at f = 1.0 GHz
GP = 15.5 dB TYP at f = 1.9 GHz
GP = 15.5 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• LIGHT WEIGHT:
7 mg (standard Value)
UPC8179TB
California Eastern Laboratories
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
APPLICATIOIN
PART NUMBER UPC8179TB
PACKAGE OUTLINE S06
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICC Circuit Current (no input signal) mA 2.9 4.0 5.4
GP Power Gain, f = 1.0 GHz, PIN = -30 dBm dB 11.0 13.5 15.5
f = 1.9 GHz, PIN = -30 dBm 13.0 15.5 17.5
f = 2.4 GHz, PIN = -30 dBm 13.0 15.5 17.5
ISOL Isolation, f = 1.0 GHz, PIN = -30 dBm dB 39.0 44.0 –
f = 1.9 GHz, PIN = -30 dBm 37.0 42.0 –
f = 2.4 GHz, PIN = -30 dBm 36.0 41.0 –
P1dB Output Power at f = 1.0 GHz dB -0.5 3.0 –
1 dB gain f = 1.9 GHz -2.0 1.5 –
compression, f = 2.4 GHz -3.0 1.0 –
NF Noise Figure, f = 1.0 GHz dB – 5.0 6.5
f = 1.9 GHz – 5.0 6.5
f = 2.4 GHz – 5.0 6.5
RLIN Input Return Loss, f = 1.0 GHz, PIN = -30 dBm dB 4.0 7.0 –
(without matching f = 1.9 GHz, PIN = -30 dBm 4.0 7.0 –
circuit) f = 2.4 GHz, PIN = -30 dBm 6.0 9.0 –
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)
+10
0
+20
–10
–40
–20
–30
0.1 0.3 1.0 3.0
V
CC
= 3.0 V
1.0 GHz
2.4 GHz
1.9 GHz
T
A
= -40°C
T
A
= +85°C
T
A
= +25°C
POWER GAIN vs. FREQUENCY
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
DESCRIPTION
Output match for best performance
at each frequency