SILICON RFIC LOW CURRENT AMPLIFIER UPC8179TB FOR MOBILE COMMUNICATIONS D FEATURES POWER GAIN vs. FREQUENCY * HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm) +20 VCC = 3.0 V * SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V 2.4 GHz TA = -40C TA = +25C UE +10 TA = +85C * HIGH EFFICIENCY: PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz 0 -10 -20 * POWER GAIN: GP = 13.5 dB TYP at f = 1.0 GHz GP = 15.5 dB TYP at f = 1.9 GHz GP = 15.5 dB TYP at f = 2.4 GHz 1.0 GHz -30 IN 1.9 GHz -40 * EXCELLENT ISOLATION: ISL = 44 dB TYP at f = 1.0 GHz ISL = 42 dB TYP at f = 1.9 GHz ISL = 41 dB TYP at f = 2.4 GHz 0.1 0.3 1.0 3.0 Output match for best performance at each frequency DESCRIPTION NT * LOW CURRENT CONSUMPTION: ICC = 4.0 mA TYP AT VCC = 3.0 V * OPERATING FREQUENCY: ICC = 4.0 mA TYP AT VCC = 3.0 V * LIGHT WEIGHT: 7 mg (standard Value) APPLICATIOIN SC O * Buffer amplifiers for 0.1 to 2.4 GHz mobile communications systems. ELECTRICAL CHARACTERISTICS, NEC's UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can be realized on internal 50 wideband matched IC. This low current amplifier uns on 3.0 V. This IC is manufactured using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has exellent performance uniformity and reliability. (Unless otherwise specified, TA = +25C, VCC = VOUT = 3.0 V, ZS = ZL = 50, at LC matched Frequency) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPC8179TB S06 UNITS MIN TYP MAX ICC Circuit Current (no input signal) mA 2.9 4.0 5.4 GP Power Gain, f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm dB 11.0 13.0 13.0 13.5 15.5 15.5 15.5 17.5 17.5 Isolation, f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm dB 39.0 37.0 36.0 44.0 42.0 41.0 - - - Output Power at 1 dB gain compression, f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz dB -0.5 -2.0 -3.0 3.0 1.5 1.0 - - - Noise Figure, f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz dB - - - 5.0 5.0 5.0 6.5 6.5 6.5 Input Return Loss, (without matching circuit) f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm dB 4.0 4.0 6.0 7.0 7.0 9.0 - - - DI ISOL P1dB NF RLIN California Eastern Laboratories UPC8179TB ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) RECOMMENDED OPERATING CONDITIONS PARAMETERS UNITS RATINGS VCC Supply Voltage, Pins 4 & 6 V 3.6 SYMBOLS ICC Circuit Current mA 15 VCC mW 270 TA C -40 to +85 C -55 to +150 dBm +5 PD Power TOP Operating Temperature TSTG Storage Temperature PIN Input Power Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85C). PIN FUNCTIONS Symbol 1 INPUT Pin Voltage 2.7 3.0 3.3 Operating Ambient Temperature C -40 +25 +85 Description Internal Equivalent Circuit Signal Input Pin. A internal matching circuit, configured with resistors, enable 50 W connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. 1.09 V GND through external inductor 4 OUTPUT Same as VCC voltage 6 4 Ground pin. This pin should be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. NT 2 3 5 VCC 2 Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with matching LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. SC O 6 TYP MAX V IN Pin No. UNITS MIN UE Dissipation2 PARAMETERS Supply Voltage D SYMBOLS 1 3 5 Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. 2.4 to 3.3 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25C) CIRCUIT CURRENT vs. TEMPERATURE CIRCUIT CURRENT vs. VOLTAGE 5 5 3 2 1 0 No signals Vcc = 3.0 V Circuit Current, ICC (mA) 4 DI Circuit Current, ICC (mA) No signals 4 3 2 1 0 0 1 2 Voltage, VCC (V) 3 4 -60 -40 -20 0 +20 +40 +60 Temperature, TA (C) +80 +100 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25C) 1.0 GHz Output Port Matching ISOLATION vs. FREQUENCY GAIN vs. FREQUENCY - 10 +20 VCC = 3.0 V TA = -40 C -20 Isolation, ISOL (dB) 0 -10 -30 TA = -40 C TA = +25C -40 UE TA = +25 C TA = +85C -20 -50 -60 -30 TA = +85 C -70 -40 0.1 0.3 0.1 3.0 1.0 0.3 INPUT RETURN LOSS vs. FREQUENCY IN Frequency, f (GHz) 3.0 OUTPUT RETURN LOSS vs. FREQUENCY +5 0 Vcc = 3.0 V -10 TA = +25 C TA = -40 C -15 -20 SC O -25 0.1 0.3 1.0 TA = -40C -5 TA = +25C -10 TA = +85C -15 -20 -25 0.1 3.0 0.3 TA = -40C 0 TA = +85C -5 TA = +25C DI -10 -15 -20 -25 -30 -40 -35 -30 -25 -20 -15 -10 -5 Input Power, PIN (dBm) 0 +5 0 Thirf Order Intermodulation Distortion, IM3 (dBc) +5 3.0 THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE +10 VCC = 3.0 V 1.0 Frequency, f (GHz) Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER VCC = 3.0 V 0 NT TA = +85 C -5 -30 Output Power, POUT (dBm) 1.0 Frequency, f (GHz) Output Return Loss, RLOUT (dBm) Gain, GP (dB) +10 Input Return Loss, RLIN (dB) D Vcc = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz -10 -20 Vcc = 2.4 V -30 Vcc = 3.0 V -40 Vcc = 3.3 V -50 -60 -20 -15 -10 -5 0 +5 Output Power of Each Tone, POUT (dBm) TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25C) 1.0 GHz Output Port Matching NOISE FIGURE vs. VOLTAGE D 6.0 TA = +85 C 5.0 UE Noise Figure, NF (dB) 5.5 TA = +25 C 4.5 4.0 TA = -40 C 3.5 3.0 2.0 2.5 3.0 3.5 IN Voltage, VCC (V) 1.9 GHz Output Port Matching ISOLATION vs. FREQUENCY GAIN vs. FREQUENCY -10 +20 Vcc = 3.0 V Vcc = 3.0 V TA = -40C NT -20 +10 0 TA = +85C -10 -20 SC O -30 Isolation, ISOL (dB) Gain, GP (dB) TA = +25C 0.3 1.0 TA = -40C TA = +25C -40 -50 TA = +85C -60 -70 -40 0.1 -30 0.1 3.0 -15 -20 -25 -30 Vcc = 3.0 V 0.1 0.3 1.0 Frequency, f (GHz) 3.0 VCC = 3.0 V Output Return Loss, RLOUT (dBm) TA = -40C DI Input Return Loss, RLIN (dB) TA = +25C -10 3.0 +5 0 -5 1.0 OUTPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY TA = +85C 0.3 Frequency, f (GHz) Frequency, f (GHz) 0 -5 -10 TA = +85C -15 TA = +25C -20 TA = -40C -25 0.1 0.3 1.0 Frequency, f (GHz) 3.0 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25C) 1.9 GHz Output Port Matching OUTPUT POWER vs. INPUT POWER +10 Thirf Order Intermodulation Distortion, IM3 (dBc) 0 TA = +25C -5 -10 TA = +85C -15 -20 -25 VCC = 3.0 V -30 -40 -35 -30 -25 -20 -15 -10 -5 0 -10 -20 Vcc = 3.3 V -30 Vcc = 3.0 V Vcc = 2.4 V -40 -50 -60 -20 +5 -15 -10 -5 0 +5 Output Power of Each Tone, POUT (dBm) IN Input Power, PIN (dBm) NOISE FIGURE vs. VOLTAGE 5.5 TA = +85 C 5.0 NT Noise Figure, NF (dB) f1 = 1 900 MHz f2 = 1 901 MHz UE Output Power, POUT (dBm) +5 D 0 TA = -40C 4.5 TA = +25 C 4.0 3.5 SC O TA = -40 C 3.0 2.0 2.5 3.5 3.0 Voltage, VCC (V) 2.4 GHz Output Port Matching ISOLATION vs. FREQUENCY GAIN vs. FREQUENCY -10 +20 VCC = 3.0 V VCC = 3.0 V TA = -40C -20 DI Gain, GP (dB) TA = +25C 0 -10 -20 TA = +85C Isolation, ISOL (dB) +10 TA = +25C -30 -40 TA = -40C -50 -30 -60 -40 -70 TA = +85C 0.1 0.3 1.0 Frequency, f (GHz) 3.0 0.1 0.3 1.0 Frequency, f (GHz) 3.0 TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25C) 2.4 GHz Output Port Matching OUTPUT RETURN LOSS vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY +5 0 Output Return Loss, RLOUT (dBm) TA = +25C TA = -40C -20 -25 VCC = 3.0 V -30 0.3 1.0 -10 TA = +85C -15 TA = +25C -20 TA = -40C 0.1 3.0 0.3 1.0 3.0 Frequency, f (GHz) IN Frequency, f (GHz) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE OUTPUT POWER vs. INPUT POWER +10 0 VCC = 3.0 V NT +5 0 TA = +25C -5 -10 TA = -40C -15 -20 TA = +85C -25 SC O Output Power, POUT (dBm) -5 -25 0.1 -30 -40 -35 -30 -25 -20 -15 -10 -5 0 +5 Input Power, PIN (dBm) NOISE FIGURE vs. VOLTAGE 5.5 TA = +85C 5.0 DI Noise Figure, NF (dB) 0 UE -15 4.5 TA = +25 4.0 TA = -40C 3.5 3.0 2.0 2.5 Thirf Order Intermodulation Distortion, IM3 (dBc ) Input Return Loss, RLIN (dB) -10 D VCC = 3.0 V TA = +85C -5 3.0 Voltage, VCC (V) 3.5 f1 = 2 400 MHz f2 = 2 401 MHz -10 Vcc = 2.4 V -20 -30 Vcc = 3.0 V -40 Vcc = 3.3 V -50 -60 -20 -15 -10 -5 0 +5 Output Power of Each Tone, POUT (dBm) UPC8179TB D TYPICAL SCATTERING PARAMETERS (TA = 25C) 0.1 G 1.0 G 0.1 G 2.0 G 1.0 G 2.0 G UE 3.0 G 3.0 G Coordinates in Ohms Frequency in GHz S11 VCC = VOUT = 3.0 V, ICC = 4.0 mA VCC = VOUT = 3.0 V, ICC = 4.0 mA S11 S21 S12 MAG ANG MAG ANG 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 0.824 0.692 0.594 0.533 0.499 0.474 0.460 0.450 0.441 0.438 0.431 0.426 0.427 0.417 0.413 0.408 0.398 0.387 0.380 0.366 0.352 0.341 0.330 0.320 0.304 0.296 0.285 0.272 0.267 0.256 0.248 -17.1 -25.9 -29.2 -30.7 -31.1 -32.0 -32.7 -34.0 -35.6 -37.7 -39.8 -42.0 -44.8 -48.1 -50.6 -54.6 -57.6 -61.6 -64.9 -69.1 -72.1 -75.6 -79.4 -82.4 -85.6 -88.2 -91.7 -94.3 -96.9 -99.5 -101.9 1.181 1.181 1.247 1.370 1.514 1.677 1.885 2.050 2.237 2.460 2.627 2.772 2.965 3.123 3.199 3.351 3.345 3.103 3.361 3.375 3.350 3.304 3.347 3.325 3.275 3.284 3.283 3.224 3.333 3.251 3.381 -177.7 -172.4 -167.4 -164.1 -162.4 -162.9 -163.8 -166.3 -169.2 -173.1 -177.3 178.4 173.2 168.0 161.8 156.8 151.2 145.5 140.9 136.3 132.3 127.9 124.8 121.2 117.3 113.7 111.0 106.5 104.3 101.1 96.0 SC O DI S22 MAG ANG MAG ANG 0.002 0.003 0.004 0.005 0.005 0.006 0.006 0.006 0.005 0.007 0.007 0.005 0.005 0.004 0.006 0.005 0.003 0.005 0.005 0.004 0.003 0.003 0.006 0.006 0.006 0.004 0.005 0.005 0.008 0.009 0.008 108.8 64.7 51.3 55.8 60.6 46.6 42.9 45.9 42.1 34.0 46.9 27.7 40.2 24.4 45.5 44.6 42.4 44.6 59.5 45.4 58.3 73.9 81.1 98.3 100.5 114.6 104.8 114.1 127.8 126.3 134.1 0.996 0.986 0.980 0.965 0.958 0.950 0.941 0.935 0.929 0.918 0.914 0.903 0.895 0.891 0.884 0.877 0.867 0.877 0.859 0.852 0.846 0.847 0.839 0.839 0.838 0.834 0.830 0.831 0.837 0.831 0.833 -2.4 -4.0 -5.8 -7.5 -8.6 -10.1 -11.2 -12.4 -13.8 -14.9 -16.0 -17.0 -18.3 -19.5 -20.4 -21.1 -22.1 -21.1 -24.4 -25.1 -25.9 -26.4 -27.4 -28.2 -29.1 -29.7 -30.6 -31.4 -32.0 -33.4 -34.0 NT GHz IN FREQUENCY S22 UPC8179TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD COMPONENT LIST 1.0 GHz Output Port Matching 1000 pF 0.75 pF 10 pF 12 nH D AMP-4 C1 C2 C3 L1 C2 L1 UE C1 Mounting Direction C3 IN C3C OUT IN Top View AMP-4 COMPONENT LIST OUT L2 IN C2 C3 C1 C6 C4 C5 AMP-4 SC O NT 1.9GHz Output Port Matching 1000 pF 0.75 pF 10 pF 3.3 nH L1 C1, C3, C5, C6 C2 C4 L1 COMPONENT LIST DI OUT L2 IN L1 C1, C2, C4, C5 C3 L1 L2 2.4 GHz Output Port Matching 1000 pF 10 pF 1.8 nH 2.7 nH C1 C3 C4 C5 C2 UPC8179TB TEST CIRCUITS <1> f = 1.0 GHz C3 D Vcc Output port matching circuit L1 50 C1 UE 6 C2 4 1 IN 50 OUT IN 2, 3, 5 <2> f = 1.9 GHz Vcc C4 C6 NT C5 6 50 C1 4 1 SC O IN Output port matching circuit L1 C2 C3 50 OUT 2, 3, 5 DI <3> f = 2.4 GHz 50 IN C1 Vcc C3 C5 C4 Output port matching circuit L1 6 4 1 L2 2, 3, 5 50 OUT C2 UPC8179TB SYSTEM APPLICATION EXAMPLE Low Noise Tr. I Q DEMOD .. N PLL PLL SW I 0 TX 90 UE PA D RX Q LEAD CONNECTIONS OUTLINE DIMENSIONS (Units in mm) 2.10.1 3 2.00.2 0.65 3 4 0.65 2 5 0.2 +0.1 -0 1.3 1 IN 1.250.1 2 1 0.7 0 ~0.1 (Bottom View) 4 4 3 5 5 2 6 6 1 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC NT 6 DOT ON BOTTOM SIDE 0.9 0.1 C3C (Top View) PACKAGE OUTLINE S06 +0.1 0.15 -0.5 RECOMMENDED P.C.B. LAYOUT (Units in mm) SC O ORDERING INFORMATION Note: All dimensions are typical unless otherwise specified. PART NUMBER UPC8179TB-E3-A 0.4 QTY 3K/Reel Note: DI 1.9 0.8 Embossed tape, 8 mm wide. Pins 1, 2, 3 are in tape pull-out direction. 0.65 0.65 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 919-2500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 05/03/2006 5-10 UE D 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives IN CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. NT CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS < 1000 PPM SC O Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) DI If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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