NPN SILICON PLANAR TRANSISTOR CMBT9014
SOT-23
MARKING: AS BELOW
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 30 V
Collector -Emitter Voltage VCEO 30 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC 100 mA
Collector Dissipation PC 250 mW
Operating And Storage Junction Tj, Tstg -55 to +150 deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Base Voltage VCBO IC=100uA, IE=0 30 - - V
Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V
Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V
Collector Cut off Current ICBO VCB=30V, IE=0 - - 15 nA
Emitter Cut off Current IEBO VEB=5V, IC=0 - - 500 nA
DC Current Gain hFE IC=1mA, VCE=5V 150 - 1000
Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA - - 0.60 V
Base Emitter Saturation Voltage VBE(Sat) IC=100mA,IB=5mA - - 1.2 V
Dynamic Characteristics
Transition Frequency ft VCE=5V,IC=10mA, 125 - - MHz
f=100MHz
Output Capacitance Cob VCB=10V,f=1MHz - - 3.5 pF
Noise Figure NF VCE=5V, IC=200uA - - 4.0 dB
f=1kHz
CLASSIFICATION CMBT9014 B C D
hFE 150-1000 100-300 200-600 400-1000
MARKING 14 14B 14C 14D
PIN
NFI
URATI
N
NPN
1 = BA SE
2 = EMITTE R
3 = COLLECTOR
2
1
3
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company