MMBZ5221ELT1 Series Zener Voltage Regulators 225 mW SOT-23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features: * * * * * * * http://onsemi.com 3 Cathode 225 mW Rating on FR-4 or FR-5 Board Zener Voltage Range - 2.4 V to 91 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power - 225 W (8 x 20 s) Pb-Free Packages are Available 1 Anode 3 1 2 SOT-23 CASE 318 STYLE 8 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MARKING DIAGRAM 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V-0 xxx M xxx = Specific Device Code M = Date Code MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 s (Note 1) @ TL 25C Ppk 225 W Total Power Dissipation on FR-5 Board, (Note 2) @ TA = 25C Derated above 25C PD Device Package Shipping 225 1.8 mW mW/C MMBZ52xxELT1 SOT-23 3000/Tape & Reel 556 C/W MMBZ52xxELT3* SOT-23 10,000/Tape & Reel Thermal Resistance - Junction-to-Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25C Derated above 25C RJA PD 300 2.4 mW mW/C Thermal Resistance - Junction-to-Ambient RJA 417 C/W Junction and Storage Temperature Range TJ, Tstg -65 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR-5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. Semiconductor Components Industries, LLC, 2005 January, 2005 - Rev. 4 1 ORDERING INFORMATION For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *MMBZ5246EL, and MMBZ5252EL Not Available in 10,000/Tape & Reel. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Publication Order Number: MMBZ5221ELT1/D MMBZ5221ELT1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) IF Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 4) VZ (V) Zener Impedance @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR Device Device Marking Min Nom Max mA mA A V MMBZ5221ELT1G,T3G BE2 2.28 2.4 2.52 20 30 1200 0.25 100 1 MMBZ5226ELT1,T3 BE7 3.13 3.3 3.47 20 28 1600 0.25 25 1 MMBZ5228ELT1,T3 BE9 3.70 3.9 4.10 20 23 1900 0.25 10 1 MMBZ5229ELT1,T3 BF1 4.08 4.3 4.52 20 22 2000 0.25 5 1 MMBZ5230ELT1,T3 BF2 4.46 4.7 4.94 20 19 1900 0.25 5 2 MMBZ5231ELT1,T3 BF3 4.84 5.1 5.36 20 17 1600 0.25 5 2 MMBZ5232ELT1,T3 BF4 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMBZ5234ELT1,T3 BF6 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMBZ5235ELT1,T3 BF7 6.46 6.8 7.14 20 5 750 0.25 3 5 MMBZ5236ELT1,T3 BF8 7.12 7.5 7.88 20 6 500 0.25 3 6 MMBZ5237ELT1,T3 BF9 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMBZ5239ELT1,T3 BG2 8.65 9.1 9.55 20 10 600 0.25 3 7 MMBZ5240ELT1,T3 BG3 9.50 10 10.50 20 17 600 0.25 3 8 MMBZ5242ELT1,T3 BG5 11.40 12 12.60 20 30 600 0.25 1 9.1 MMBZ5243ELT1,T3 BG6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMBZ5244ELT1,T3 BG7 13.30 14 14.70 9 15 600 0.25 0.1 10 MMBZ5245ELT1,T3 BG8 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMBZ5246ELT1* BG9 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMBZ5248ELT1,T3 BH2 17.10 18 18.90 7 21 600 0.25 0.1 14 MMBZ5250ELT1,T3 BH4 19.00 20 21.00 6.2 25 600 0.25 0.1 15 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. The "G'' suffix indicates Pb-Free package available. *Not Available in the 10,0000/Tape & Reel. http://onsemi.com 2 MMBZ5221ELT1 Series ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 5) Device MMBZ5252ELT1* VZ (V) Zener Impedance Leakage Current @ IZT ZZT @ IZT Max mA mA A V 24 25.20 5.2 33 600 0.25 0.1 18 Device Marking Min Nom BH6 22.80 ZZK @ IZK IR @ VR MMBZ5253ELT1,T3 BH7 23.75 25 26.25 5 35 600 0.25 0.1 19 MMBZ5254ELT1,T3 BH8 25.65 27 28.35 4.6 41 600 0.25 0.1 21 MMBZ5255ELT1,T3 BH9 26.60 28 29.40 4.5 44 600 0.25 0.1 21 MMBZ5256ELT1,T3 BJ1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMBZ5257ELT1,T3 BJ2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMBZ5258ELT1,T3 BJ3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMBZ5262ELT1,T3 BJ7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37 MMBZ5263ELT1,T3 BJ8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 MMBZ5265ELT1 BK1 58.90 62 65.10 2 185 1400 0.25 0.1 47 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C. *Not Available in the 10,0000/Tape & Reel. http://onsemi.com 3 MMBZ5221ELT1 Series 8 100 7 VZ, TEMPERATURE COEFFICIENT (mV/C) VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES FOR MMBZ5221BLT1 SERIES 6 5 4 VZ @ IZT 3 TYPICAL TC VALUES FOR MMBZ5221BLT1 SERIES VZ @ IZT 10 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C) 1000 IZ = 1 mA TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMBZ5221ELT1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT ( A) TA = 25C 100 BIAS AT 50% OF VZ NOM 100 10 1 +150C 0.1 0.01 10 +25 C 0.00 1 0.0001 1 1 -55 C 0.00001 100 0 10 VZ, NOMINAL ZENER VOLTAGE (V) 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25C I Z , ZENER CURRENT (mA) 10 1 10 1 0.1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 0.01 12 10 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 s tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tP 20 10 0 0 20 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) TA = 25C 0.01 80 40 60 t, TIME (s) Figure 9. 8 x 20 s Pulse Waveform http://onsemi.com 5 80 90 MMBZ5221ELT1 Series PACKAGE DIMENSIONS SOT-23 TO-236AB CASE 318-08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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