Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4 1Publication Order Number:
MMBZ5221ELT1/D
MMBZ5221ELT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features:
•225 mW Rating on FR−4 or FR−5 Board
•Zener Voltage Range − 2.4 V to 91 V
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•ESD Rating of Class 3 (>16 kV) per Human Body Model
•Peak Power − 225 W (8 x 20 s)
•Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 s (Note 1)
@ TL ≤ 25°CPpk 225 W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance −
Junction−to−Ambient RJA 556 °C/W
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance −
Junction−to−Ambient RJA 417 °C/W
Junction and Storage
Temperature Range TJ, Tstg −65 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
3
Cathode 1
Anode
MMBZ52xxELT1 SOT−23 3000/Tape & Reel
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
xxx = Specific Device Code
M = Date Code
xxx M
MMBZ52xxELT3* SOT−23 10,000/Tape & Reel
3
12
*MMBZ5246EL, and MMBZ5252EL
Not Available in 10,000/Tape & Reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MMBZ5221ELT1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 4) Zener Impedance Leakage Current
Device
VZ (V) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Device
Device
Marking Min Nom Max mA mA A V
MMBZ5221ELT1G,T3G† BE2 2.28 2.4 2.52 20 30 1200 0.25 100 1
MMBZ5226ELT1,T3 BE7 3.13 3.3 3.47 20 28 1600 0.25 25 1
MMBZ5228ELT1,T3 BE9 3.70 3.9 4.10 20 23 1900 0.25 10 1
MMBZ5229ELT1,T3 BF1 4.08 4.3 4.52 20 22 2000 0.25 5 1
MMBZ5230ELT1,T3 BF2 4.46 4.7 4.94 20 19 1900 0.25 5 2
MMBZ5231ELT1,T3 BF3 4.84 5.1 5.36 20 17 1600 0.25 5 2
MMBZ5232ELT1,T3 BF4 5.32 5.6 5.88 20 11 1600 0.25 5 3
MMBZ5234ELT1,T3 BF6 5.89 6.2 6.51 20 7 1000 0.25 5 4
MMBZ5235ELT1,T3 BF7 6.46 6.8 7.14 20 5 750 0.25 3 5
MMBZ5236ELT1,T3 BF8 7.12 7.5 7.88 20 6 500 0.25 3 6
MMBZ5237ELT1,T3 BF9 7.79 8.2 8.61 20 8 500 0.25 3 6.5
MMBZ5239ELT1,T3 BG2 8.65 9.1 9.55 20 10 600 0.25 3 7
MMBZ5240ELT1,T3 BG3 9.50 10 10.50 20 17 600 0.25 3 8
MMBZ5242ELT1,T3 BG5 11.40 12 12.60 20 30 600 0.25 1 9.1
MMBZ5243ELT1,T3 BG6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9
MMBZ5244ELT1,T3 BG7 13.30 14 14.70 9 15 600 0.25 0.1 10
MMBZ5245ELT1,T3 BG8 14.25 15 15.75 8.5 16 600 0.25 0.1 11
MMBZ5246ELT1* BG9 15.20 16 16.80 7.8 17 600 0.25 0.1 12
MMBZ5248ELT1,T3 BH2 17.10 18 18.90 7 21 600 0.25 0.1 14
MMBZ5250ELT1,T3 BH4 19.00 20 21.00 6.2 25 600 0.25 0.1 15
Devices listed in
bold, italic
are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
†The “G’’ suffix indicates Pb−Free package available.
*Not Available in the 10,0000/Tape & Reel.
MMBZ5221ELT1 Series
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3
ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)
Zener Voltage (Note 5) Zener Impedance Leakage Current
Device
VZ (V) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Device
Device
Marking Min Nom Max mA mA A V
MMBZ5252ELT1* BH6 22.80 24 25.20 5.2 33 600 0.25 0.1 18
MMBZ5253ELT1,T3 BH7 23.75 25 26.25 5 35 600 0.25 0.1 19
MMBZ5254ELT1,T3 BH8 25.65 27 28.35 4.6 41 600 0.25 0.1 21
MMBZ5255ELT1,T3 BH9 26.60 28 29.40 4.5 44 600 0.25 0.1 21
MMBZ5256ELT1,T3 BJ1 28.50 30 31.50 4.2 49 600 0.25 0.1 23
MMBZ5257ELT1,T3 BJ2 31.35 33 34.65 3.8 58 700 0.25 0.1 25
MMBZ5258ELT1,T3 BJ3 34.20 36 37.80 3.4 70 700 0.25 0.1 27
MMBZ5262ELT1,T3 BJ7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37
MMBZ5263ELT1,T3 BJ8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43
MMBZ5265ELT1 BK1 58.90 62 65.10 2 185 1400 0.25 0.1 47
Devices listed in
bold, italic
are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Not Available in the 10,0000/Tape & Reel.
MMBZ5221ELT1 Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
FOR MMBZ5221BLT1 SERIES
VZ @ IZT
100
VZ, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150°C75°C 25°C 0°C
MMBZ5221ELT1 Series
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5
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25°C
IR, LEAKAGE CURRENT ( A)
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.00
1
0.0001
0.00001 80706050403020100
+150°C
+25 °C
−55 °C
IZ, ZENER CURRENT (mA)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V) Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
Figure 9. 8 × 20 s Pulse Waveform
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (s)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
HALF VALUE IRSM/2 @ 20 s
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 s
MMBZ5221ELT1 Series
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6
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−08
ISSUE AK
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
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MMBZ5221ELT1/D
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