Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SC2073 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.5 W (Tamb=25) 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 150 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100A, IE=0 150 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 10 A Emitter cut-off current IEBO VEB=5V, IC=0 10 A DC current gain hFE(1) VCE=10V, IC=500mA VCE(sat) IC=500mA, IB=50mA Base-emitter voltage VBE VCE=10V, IC=500mA Transition frequency fT VCE=10V, IC=500mA 4 MHz Cob VCB=10V, IE=0, f=1MHz 35 pF Collector-emitter saturation voltage Collector output capacitance 40 140 0.65 1.5 V 0.85 V