TO-220 Plastic-Encapsulated Transistors
2SC2073 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.5 W (Tamb=25)
Collector current
ICM: 1.5 A
Collector-base voltage
V(BR)CBO: 150 V
Operating and storage junction temperature range
TJ, Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-b as e br eak down voltage V(BR)CBO Ic=100µA, IE=0 150 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 150 V
Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V
Collector cut-off current ICBO VCB=120V, IE=0
10 µA
Emitter cut-off current IEBO VEB=5V, IC=0
10 µA
DC current gain hFE(1) VCE=10V, IC=500mA 40 140
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA
1.5 V
Base-emitter voltage VBE VCE=10V, IC=500mA 0.65 0.85 V
Transition frequency fT V
CE=10V, IC=500mA 4 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 35 pF
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
Transys
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