4
Absolute Maximum Ratings
AlGaAs HER
Red Low Low
Description Current HER Current Yellow Green Units
Average Power per 37 105 52 105 105 mW
Segment or DP
Peak Forward Current 45 90[2] 45 90[5] 90[7] mA
per Segment or DP
DC Forward Current 15[1] 30[3] 15[4] 30[6] 30[8] mA
per Segment or DP
Operating Temperature Range -20 to 100 -40 to +100 °C
Storage Temperature Range -40 to +100 °C
Reverse Voltage per 3.0 V
Segment or DP
Wavesoldering Temperature 250 °C
for 3 seconds 1.59 mm below body
Notes:
1. Derate above 91°C at 0.53 mA/°C.
2. See Figure 9 to establish pulsed conditions.
3. Derate above 53°C at 0.45 mA/°C.
4. Derate above 80°C at 0.38 mA/°C.
5. See Figure 10 to establish pulsed conditions.
6. Derate above 81°C at 0.52 mA/°C.
7. See Figure 11 to establish pulsed ocnditions.
8. Derate above 39°C at 0.37 mA/°C.
Electrical/Optical Characteristics at TA = 25°C
AlGaAs Red Low Current
Device Series Test
HDSP- Parameter Symbol Min. Typ. Max. Units Conditions
315/316H Luminous Intensity/Segment[1,2] IV 180 650 µcd IF = 1 mA
515/516H (Digit Average)
Forward Voltage/Segment or DP VF 1.8 2.2 V IF = 1 mA
Peak Wavelength λPEAK 645 nm
Dominant Wavelength[3] λd 637 nm
Reverse Voltage/Segment or DP[4] VR 3 15 V IR = 100 µA
Thermal Resistance LED RθJ-PIN 255 °C/W/Seg
Junction-to-Pin
HER
Device Series Test
HDSP- Parameter Symbol Min. Typ. Max. Units Conditions
315/316E Luminous Intensity/Segment[1,2] IV 450 2600 µcd IF = 10 mA
515/516E (Digit Average)
Forward Voltage/Segment or DP VF 1.9 2.5 V IF = 10 mA
Peak Wavelength λPEAK 635 nm
Dominant Wavelength[3] λd 626 nm
Reverse Voltage/Segment or DP[4] VR 3 30 V IR = 100 µA
Thermal Resistance LED RθJ-PIN 200 °C/W/Seg
Junction-to-Pin