April 1994 Edition 1.0 DATA SHEET MB814400D-60/-70 CMOS 1M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM (DRAM) that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400D features a "fast page" mode of operation whereby high-speed random access of up to 1,024-bits of data within the same row can be selected. The MB814400D DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory applications where very low power dissipation and high bandwidth are basic requirements of the design. Since the standby current of the MB814400D is very small, the device can be used as a non-volatile memory in equipment that uses batteries for primary and/or auxiliary power. The MB814400D is fabricated using silicon gate CMOS and Fujitsu's advanced four-layer polysilicon process. This process, coupled with three-dimensional stacked capacitor memory cells, reduces the possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements for the MB814400D are not critical and all inputs are TTL compatible. Plastic SOJ Package (LCC-26P-M04) PRODUCT LINE & FEATURES Parameter MB814400D-60 MB814400D-70 60ns max. 15ns max. 30ns max. 110ns min. 40ns min. 70ns max. 20ns max. 35ns max. 125ns min. 45ns min. RAS Access Time CAS Access Time Address Access Time Randam Cycle Time Fast Page Mode Cycle Time 605mW max. 550mW max. Low Power Operating current Dissipation Standby current 11mW max. (TTL level) / 5.5mW max. (CMOS level) * 1,048,576 words x 4Bit organization * Silicon gate, CMOS, 3D-Stacked capacitor Cell * Early write or OE controlled write capability * RAS only, CAS-before-RAS, or Hidden Refresh * All input and output are TTL compatible * Fast page Mode, Read-Modify-Write capability * 1024 refresh cycles every 16.4ms * On chip substrate bias generator for high performance ABSOLUTE MAXIMUM RATINGS (see NOTE) Parameter Package and Ordering Information Symbol Value VSS, VOT -1 to +7 V Voltage of VCC supply relative to VSS V CC -1 to +7 V Power Dissipation PD 1.0 W Short Circuit Output Current -- 50 mA TSTG -55 to +125 C Voltage at any pin relative to Vss Storage Temperature Unit NOTE: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Copyright - 26-pin plastic (300mil) SOJ, order as MB814400D-xxPJN This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit. 1994 by FUJITSU LIMITED 1