SILICON HIGH- POWER TRANSISTOR PNP TIP36A/B/C 25A 125W Technical Data ...designed for use in general-purpose switching and power amplifier applications. F DC Current Gain - h FE = 15(Min) @ IC = 15 Adc F 25 A Collecter Current F TO-218 Package MAXIMUM RATINGS Rating Symbol TIP36A TIP36B TIP36C Unit Collector- Emitter Voltage V CEO 60 80 100 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CB V EB IC 60 80 5 25 40 5 100 Vdc Vdc Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case IB PD Adc 125 1 -65 to +150 Tj,Tstg Watts W/C C Symbol Max. Unit R thjc 1.0 C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic C unless otherwise noted ] Symbol Min Typ Max Unit * OFF CHARACTERISTICS : Collector-Emitter Sustaining [ Ic =30 mAdc, IB = 0 ] Voltage(1) VCEO(sus) TIP36A TIP36B TIP36C Collector Cutoff Current ICE0 [ VCE = 30 Vdc, IB = 0 ] TIP36A TIP36B,TIP36C Collector Cutoff Current ICES [ VCE =Rated VCEO,VBE = 0 ] Emitter -Base Cutoff Current [ VEB =5.0 Vdc , Ic = 0 ] Vdc 60 80 100 mAdc IEBO 1.0 1.0 700 Adc 1 mAdc * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 1.5 Adc , VCE = 4.0 Vdc ] [ Ic = 15Adc , VCE = 4.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 15Adc , IB = 1.5Adc ] [ Ic = 25Adc , IB = 5.0Adc ] Base-Emitter on Voltage [ Ic =15.0 Adc , VCE= 4V] [ Ic =25.0 Adc , VCE= 4.0V] hFE 25 15 --75 VCE(sat) 1.8 4.0 Vdc VBE(on) 2.0 4.0 Vdc DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [Ic=1Adc,VCE=10Vdc,ftest=1.0 MHz ] Small-Signal Current Gain [ IC= 1 Adc, VCE=10 Vdc, f=1kHz] * fT 3 hfe 25 (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0% MHz