SILICON HIGH- POWER TRANSISTOR
PNP TIP36A/B/C
25A 125W
Technical Data
…designed for use in general-purpose switching and power amplifier
applications.
F DC Current Gain - h FE = 15(Min) @ IC = 15 Adc
F 25 A Collecter Current
F TO-218 Package
MAXIMUM RATINGS
Rating Symbol TIP36A TIP36B TIP36C Unit
Collector- Emitter Voltage V CEO 60 80 100 Vdc
Collector – Base Voltage V CB 60 80 100 Vdc
Emitter Base Voltage V EB 5 Vdc
Collector Current – Continuos
Peak I C25
40 Adc
Base Current I B5 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 125
1Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 1.0 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage(1)
[ Ic =30 mAdc, IB = 0 ] TIP36A
TIP36B
TIP36C
V
CEO(sus)
60
80
100
Vdc
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] TIP36A
TIP36B,TIP36C
ICE0 1.0
1.0
mAdc
Collector Cutoff Current
[ VCE =Rated VCEO,VBE = 0 ] ICES 700 µAdc
Emitter –Base Cutoff Current
[ VEB =5.0 Vdc , Ic = 0 ] IEBO 1 mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 1.5 Adc , VCE = 4.0 Vdc ]
[ Ic = 15Adc , VCE = 4.0 Vdc ]
hFE 25
15 ---
75
Collector-Emitter Saturation Voltage
[ Ic = 15Adc , IB = 1.5Adc ]
[ Ic = 25Adc , IB = 5.0Adc ] VCE(sat) 1.8
4.0 Vdc
Base-Emitter on Voltage
[ Ic =15.0 Adc , VCE= 4V]
[ Ic =25.0 Adc , VCE= 4.0V] VBE(on) 2.0
4.0 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=1Adc,VCE=10Vdc,ftest=1.0 MHz ] fT3 MHz
Small-Signal Current Gain
[ IC= 1 Adc, VCE=10 Vdc, f=1kHz] hfe 25
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%