
CMST3904 NPN
CMST3906 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST3904,
CMST3906 types are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini™ surface mount package,
designed for small signal general purpose amplifier and
switching applications.
MARKING CODES: CMST3904: 1AC
CMST3906: 2AC
MAXIMUM RATINGS: (TA=25°C) SYMBOL CMST3904 CMST3906 UNITS
Collector-Base Voltage VCBO 60 40 V
Collector-Emitter Voltage VCEO 40 40 V
Emitter-Base Voltage VEBO 6.0 5.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 275 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 455 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
CMST3904 CMST3906
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=30V, VEB=3.0V - 50 - 50 nA
BVCBO I
C=10μA 60 - 40 - V
BVCEO I
C=1.0mA 40 - 40 - V
BVEBO I
E=10μA 6.0 - 5.0 - V
VCE(SAT) I
C=10mA, IB=1.0mA - 0.20 - 0.25 V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.30 - 0.40 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.65 0.85 0.65 0.85 V
VBE(SAT) I
C=50mA, IB=5.0mA - 0.95 - 0.95 V
hFE V
CE=1.0V, IC=0.1mA 40 - 60 -
hFE V
CE=1.0V, IC=1.0mA 70 - 80 -
hFE V
CE=1.0V, IC=10mA 100 300 100 300
hFE V
CE=1.0V, IC=50mA 60 - 60 -
hFE V
CE=1.0V, IC=100mA 30 - 30 -
fT V
CE=20V, IC=10mA, f=100MHz 300 - 250 - MHz
SOT-323 CASE
R4 (10-June 2010)
www.centralsemi.com