PIC18F2331/2431/4331/4431 Flash Microcontroller Programming Specification 1.0 DEVICE OVERVIEW 2.1 In High Voltage ICSP mode, the PIC18FXX31 requires two programmable power supplies: one for VDD and one for MCLR/VPP. Both supplies should have a minimum resolution of 0.25V. Refer to Section 6.0 for additional hardware parameters. This document includes the programming specifications for the following devices: * * * * PIC18F2331 PIC18F2431 PIC18F4331 PIC18F4431 2.0 2.1.1 PROGRAMMING OVERVIEW OF THE PIC18FXX31 LOW VOLTAGE ICSP PROGRAMMING In Low Voltage ICSP mode, the PIC18FXX31 can be programmed using a VDD source in the operating range. This only means that MCLR/VPP does not have to be brought to a different voltage but can instead be left at the normal operating voltage. Refer to Section 6.0 for additional hardware parameters. PIC18FXX31 devices can be programmed using either the high voltage In-Circuit Serial ProgrammingTM (ICSPTM) method, or the low voltage ICSP method. Both of these can be done with the device in the users' system. The low voltage ICSP method is slightly different than the high voltage method, and these differences are noted where applicable. This programming specification applies to PIC18FXX31 devices in all package types. TABLE 2-1: Hardware Requirements 2.2 Pin Diagrams The pin diagrams for the PIC18FXX31 family are shown in Figure 2-1, Figure 2-2, and Figure 2-3. The pin descriptions of these diagrams do not represent the complete functionality of the device types. Users should refer to the appropriate device data sheet for complete pin descriptions. PIN DESCRIPTIONS (DURING PROGRAMMING): PIC18FXX31 During Programming Pin Name Pin Name Pin Type Pin Description MCLR/VPP VPP P Programming Enable VDD(2) VDD P Power Supply VSS(2) VSS P Ground AVDD AVDD P Analog Power Supply AVSS AVSS P Analog Ground RB5 PGM I Low Voltage ICSPTM Input when LVP Configuration bit equals `1' (1) RB6 SCLK I Serial Clock RB7 SDATA I/O Serial Data Legend: Note 1: 2: I = Input, O = Output, P = Power See Section 5.3 for more detail. All power supply and ground must be connected, including AVDD and AVSS. 2010 Microchip Technology Inc. DS30500B-page 1 PIC18F2331/2431/4331/4431 FIGURE 2-1: PIN DIAGRAMS 28-Pin SDIP, SOIC 28 RB7/KBI3/PGD 2 27 RB6/KBI2/PGC RA1/AN1 3 26 RB5/KBI1/PWM4/PGM(1) RA2/AN2/VREF-/CAP1/INDX 4 5 25 24 RB4/KBI0/PWM5 RA3/AN3/VREF+/CAP2/QEA RA4/AN4/CAP3/QEB 6 23 RB2/PWM2 AVDD 7 8 22 21 RB1/PWM1 20 19 VDD AVSS RB3/PWM3 RB0/PWM0 OSC2/CLKO/RA6 9 10 RC0/T1OSO/T1CKI 11 18 RC7/RX/DT/SDO RC1/T1OSI/CCP2/FLTA 12 13 14 17 16 15 RC6/TX/CK/SS OSC1/CLKI/RA7 RC2/CCP1/FLTB RC3/T0CKI/T5CKI/INT0 Note 1: PIC18F2331/2431 *1 RA0/AN0 MCLR/VPP/RE3 VSS RC5/INT2/SCK/SCL RC4/INT1/SDI/SDA Low voltage programming must be enabled. MCLR/VPP/RE3 RA0/AN0 RA1/AN1 RA2/AN2/VREF-/CAP1/INDX RA3/AN3/VREF+/CAP2/QEA RA4/AN4/CAP3/QEB RA5/AN5/LVDIN RE0/AN6 RE1/AN7 RE2/AN8 AVDD AVSS OSC1/CLKI/RA7 OSC2/CLKO/RA6 RC0/T1OSO/T1CKI RC1/T1OSI/CCP2/FLTA RC2/CCP1/FLTB RC3/T0CKI(1)/T5CKI(1)/INT0 RD0/T0CKI/T5CKI RD1/SDO Note 1: 2: 3: 4: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 PIC18F4331/4431 40-Pin PDIP 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 RB7/KBI3/PGD RB6/KBI2/PGC RB5/KBI1/PWM4/PGM(2) RB4/KBI0/PWM5 RB3/PWM3 RB2/PWM2 RB1/PWM1 RB0/PWM0 VDD VSS RD7/PWM7 RD6/PWM6 RD5/PWM4(4) RD4/FLTA(3) RC7/RX/DT/SDO(1) RC6/TX/CK/SS RC5/INT2/SCK(1)/SCL(1) RC4/INT1/SDI(1)/SDA(1) RD3/SCK/SCL RD2/SDI/SDA RC3 is the alternate pin for T0CKI/T5CKI, RC4 is the alternate pin for SDI/SDA, RC5 is the alternate pin for SCK/SCL. Low voltage programming must be enabled. RD4 is the alternate pin for FLTA. RD5 is the alternate pin for PWM4. DS30500B-page 2 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 FIGURE 2-2: PIN DIAGRAMS (CONTINUED) 44 43 42 41 40 39 38 37 36 35 34 RC6/TX/CK/SS RC5/INT2/SCK(1)/SCL(1) RC4/INT1/SDI(1)/SDA(1) RD3/SCK/SCL RD2/SDI/SDA RD1/SDO RD0/T0CKI/T5CKI RC3/T0CKI(1)/T5CKI(1)/INT0 RC2/CCP1/FLTB RC1/T1OSI/CCP2/FLTA NC 44-Pin TQFP 1 2 3 4 5 6 7 8 9 10 11 PIC18F4331 PIC18F4431 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 RC7/RX/DT/SDO(1) RD4/FLTA(3) RD5/PWM4(4) RD6/PWM6 RD7/PWM7 VSS VDD RB0/PWM0 RB1/PWM1 RB2/PWM2 RB3/PWM3 NC RC0/T1OSO/T1CKI OSC2/CLKO/RA6 OSC1/CLKI/RA7 AVSS AVDD RE2/AN8 RE1/AN7 RE0/AN6 RA5/AN5/LVDIN RA4/AN4/CAP3/QEB RA3/AN3/VREF+/CAP2/QEB RA2/AN2/VREF-/CAP1/INDX RA1/AN1 RA0/AN0 MCLR/VPP/RE3 RB7/KBI3/PGD RB6/KBI2/PGC RB5/KBI1/PWM4/PGM(2) RB4/KBI0/PWM5 NC NC Note 1: 2: 3: 4: RC3 is the alternate pin for T0CKI/T5CKI, RC4 is the alternate pin for SDI/SDA, RC5 is the alternate pin for SCK/SCL. Low voltage programming must be enabled. RD4 is the alternate pin for FLTA. RD5 is the alternate pin for PWM4. 2010 Microchip Technology Inc. DS30500B-page 3 PIC18F2331/2431/4331/4431 FIGURE 2-3: PIN DIAGRAMS (CONTINUED) 44 43 42 41 40 39 38 37 36 35 34 RC6/TX/CK/SS RC5/INT2/SCK(1)/SCL(1) RC4/INT1/SDI(1)/SDA(1) RD3/SCK/SCL RD2/SDI/SDA RD1/SDO RD0/T0CKI/T5CKI RC3/T0CKI(1)/T5CKI(1)/INT0 RC2/CCP1/FLTB RC1/T1OSI/CCP2/FLTA RC0/T1OSO/T1CKI 44-Pin QFN 1 2 3 4 5 6 7 8 9 10 11 PIC18F4331 PIC18F4431 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 RC7/RX/DT/SDO(1) RD4/FLTA(3) RD5/PWM4(4) RD6/PWM6 RD7/PWM7 VSS VDD AVDD RB0/PWM0 RB1/PWM1 RB2/PWM2 OSC2/CLKO/RA6 OSC1/CLKI/RA7 VSS AVSS VDD VDD RE2/AN8 RE1/AN7 RE0/AN6 RA5/AN5/LVDIN RA4/AN4/CAP3/QEB RA3/AN3/VREF+/CAP2/QEA RA2/AN2/VREF-/CAP1/INDX RA1/AN1 RA0/AN0 MCLR/VPP/RE3 RB7/KBI3/PGD RB6/KBI2/PGC RB5/KBI1/PWM4/PGM(2) RB4/KBI0/PWM5 NC RB3/PWM3 Note 1: 2: 3: 4: RC3 is the alternate pin for T0CKI/T5CKI, RC4 is the alternate pin for SDI/SDA, RC5 is the alternate pin for SCK/SCL. Low voltage programming must be enabled. RD4 is the alternate pin for FLTA. RD5 is the alternate pin for PWM4. DS30500B-page 4 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 2.3 TABLE 2-2: Memory Map The code memory space extends from 0000h to 3FFFh (16 Kbytes) in four 4-Kbyte blocks. Addresses 0000h through 01FFh, however, define a "Boot Block" region that is treated separately from Block 0. All of these blocks define code protection boundaries within the code memory space. Device Code Memory Size (Bytes) PIC18F2331 000000h - 001FFFh (8K) PIC18F4331 PIC18F2431 000000h - 003FFFh (16K) PIC18F4431 In contrast, code memory panels are defined in 8-Kbyte boundaries. Panels are discussed in greater detail in Section 3.2. FIGURE 2-4: IMPLEMENTATION OF CODE MEMORY MEMORY MAP AND THE CODE MEMORY SPACE FOR PIC18FXX31 DEVICES 000000h Code Memory 003FFFh MEMORY SIZE/DEVICE 8 Kbytes (PIC18FX331) Address Range 16 Kbytes (PIC18FX431) 0000h Unimplemented Read as `0' Boot Block Address Range 0000h Boot Block 0FFFh CPB, WRTB, EBTRB 01FFh 0200h Block 0 0200h Block 0 0FFFh CP0, WRT0, EBTR0 0FFFh 1000h Block 1 Block Code Protection Controlled By: 1000h Block 1 1FFFh CP1, WRT1, EBTR1 1FFFh 2000h Block 2 1FFFFFh Unimplemented Read as `0' CP2, WRT2, EBTR2 2FFFh 3000h Block 3 3FFFh CP3, WRT3, EBTR3 3FFFh Configuration and ID Space 3FFFFFh Note: Sizes of memory areas not to scale. 2010 Microchip Technology Inc. DS30500B-page 5 PIC18F2331/2431/4331/4431 In addition to the code memory space, there are three blocks in the configuration and ID space that are accessible to the user through table reads and table writes. Their locations in the memory map are shown in Figure 2-5. Users may store identification information (ID) in eight ID registers. These ID registers are mapped in addresses 200000h through 200007h. The ID locations read out normally even after code protection is applied. Locations 300000h through 30000Dh are reserved for the configuration bits. These bits select various device options and are described in Section 5.0. These configuration bits read out normally even after code protection. Locations 3FFFFEh and 3FFFFFh are reserved for the device ID bits. These bits may be used by the programmer to identify what device type is being programmed and are described in Section 5.0. These device ID bits read out normally even after code protection. FIGURE 2-5: 2.3.1 MEMORY ADDRESS POINTER Memory in the address space 0000000h to 3FFFFFh is addressed via the table pointer which is comprised of three pointer registers: * TBLPTRU, at RAM address 0FF8h * TBLPTRH, at RAM address 0FF7h * TBLPTRL, at RAM address 0FF6h TBLPTRU TBLPTRH TBLPTRL Addr[21:16] Addr[15:8] Addr[7:0] The 4-bit command, `0000' (core instruction), is used to load the table pointer prior to using many read or write operations. CONFIGURATION AND ID LOCATIONS FOR PIC18FXX31 DEVICES 000000h Code Memory 01FFFFh Unimplemented Read as `0' 1FFFFFh Configuration and ID Space 2FFFFFh ID Location 1 200000h ID Location 2 200001h ID Location 3 200002h ID Location 4 200003h ID Location 5 200004h ID Location 6 200005h ID Location 7 200006h ID Location 8 200007h CONFIG1L 300000h CONFIG1H 300001h CONFIG2L 300002h CONFIG2H 300003h CONFIG3L 300004h CONFIG3H 300005h CONFIG4L 300006h CONFIG4H 300007h CONFIG5L 300008h CONFIG5H 300009h CONFIG6L 30000Ah CONFIG6H 30000Bh CONFIG7L 30000Ch CONFIG7H 30000Dh Device ID1 3FFFFEh Device ID2 3FFFFFh 3FFFFFh Note: Sizes of memory areas are not to scale. DS30500B-page 6 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 2.4 High Level Overview of the Programming Process FIGURE 2-7: Figure 2-7 shows the high level overview of the programming process. First, a bulk erase is performed. Next, the code memory, ID locations, and data EEPROM are programmed. These memories are then verified to ensure that programming was successful. If no errors are detected, the configuration bits are then programmed and verified. HIGH LEVEL PROGRAMMING FLOW Start Perform Bulk Erase Program Memory 2.5 Entering High Voltage ICSP Program/Verify Mode Program IDs The High Voltage ICSP Program/Verify mode is entered by holding SCLK and SDATA low and then raising MCLR/VPP to VIHH (high voltage). Once in this mode, the code memory, data EEPROM, ID locations, and configuration bits can be accessed and programmed in serial fashion. Program Data The sequence that enters the device into the Program/ Verify mode places all unused I/Os in the high impedance state. 2.5.1 Verify Program Verify IDs ENTERING LOW VOLTAGE ICSP PROGRAM/VERIFY MODE When the LVP configuration bit is `1' (see Section 5.3), the Low Voltage ICSP mode is enabled. Low Voltage ICSP Program/Verify mode is entered by holding SCLK and SDATA low, placing a logic high on PGM, and then raising MCLR/VPP to VIH. In this mode, the RB5/PGM pin is dedicated to the programming function and ceases to be a general purpose I/O pin. Verify Data Program Configuration Bits Verify Configuration Bits The sequence that enters the device into the Program/ Verify mode places all unused I/Os in the high impedance state. Done FIGURE 2-6: ENTERING HIGH VOLTAGE PROGRAM/ VERIFY MODE FIGURE 2-8: ENTERING LOW VOLTAGE PROGRAM/ VERIFY MODE P15 P13 P12 P12 P1 VIH MCLR/VPP D110 MCLR/VPP VDD VIH VDD PGM SDATA SDATA SCLK SCLK SDATA = Input 2010 Microchip Technology Inc. SDATA = Input DS30500B-page 7 PIC18F2331/2431/4331/4431 2.6 TABLE 2-3: Serial Program/Verify Operation The SCLK pin is used as a clock input pin and the SDATA pin is used for entering command bits and data input/output during serial operation. Commands and data are transmitted on the rising edge of SCLK, latched on the falling edge of SCLK, and are Least Significant bit (LSb) first. COMMANDS FOR PROGRAMMING 4-Bit Command Description Core Instruction (Shift in16-bit instruction) 0000 Shift out TABLAT register 0010 Table Read 1000 All instructions are 20 bits, consisting of a leading 4-bit command followed by a 16-bit operand, which depends on the type of command being executed. To input a command, SCLK is cycled four times. The commands needed for programming and verification are shown in Table 2-3. Table Read, post-increment 1001 Table Read, post-decrement 1010 Table Read, pre-increment 1011 Table Write 1100 Table Write, post-increment by 2 1101 Depending on the 4-bit command, the 16-bit operand represents 16 bits of input data, or 8 bits of input data and 8 bits of output data. Table Write, post-decrement by 2 1110 Table Write, start programming 1111 2.6.1 4-BIT COMMANDS Throughout this specification, commands and data are presented as illustrated in Table 2-4. The 4-bit command is shown MSb first. The command operand, or "Data Payload", is shown <MSB><LSB>. Figure 2-9 demonstrates how to serially present a 20-bit command/operand to the device. 2.6.2 TABLE 2-4: SAMPLE COMMAND SEQUENCE 4-Bit Command Data Payload 1101 3C 40 CORE INSTRUCTION Core Instruction Table Write, post-increment by 2 The core instruction passes a 16-bit instruction to the CPU core for execution. This is needed to setup registers as appropriate for use with other commands. FIGURE 2-9: TABLE WRITE, POST-INCREMENT TIMING (1101) P2 1 P2A P2B 2 3 4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 2 1 3 4 SCLK P5 P5A P4 P3 SDATA 1 0 1 1 0 0 0 0 4-bit Command 0 0 0 1 0 0 0 1 4 C 16-bit Data Payload 1 1 1 0 0 n n n n 3 Fetch Next 4-bit Command SDATA = Input DS30500B-page 8 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 3.0 DEVICE PROGRAMMING 3.1 High Voltage ICSP Bulk Erase TABLE 3-2: 4-Bit Data Command Payload Erasing code or data EEPROM is accomplished by writing an "erase option" to address 3C0004h. Code memory may be erased portions at a time, or the user may erase the entire device in one action. "Bulk Erase" operations will also clear any code protect settings associated with the memory block erased. Erase options are detailed in Table 3-1. TABLE 3-1: BULK ERASE COMMAND SEQUENCE 0000 0000 0000 0000 0000 0000 1100 0E 6E 0E 6E 0E 6E 00 0000 0000 00 00 00 00 3C F8 00 F7 04 F6 80 MOVLW 3Ch MOVWF TBLPTRU MOVLW 00h MOVWF TBLPTRH MOVLW 04h MOVWF TBLPTRL Write 80h TO 3C0004h to erase entire device. NOP Hold SDATA low until erase completes. BULK ERASE OPTIONS Description Data Chip Erase 80h Erase Data EEPROM 81h Erase Boot Block 83h Erase Block 1 88h Erase Block 2 89h Erase Block 3 8Ah Erase Block 4 8Bh FIGURE 3-1: BULK ERASE FLOW Start Load Address Pointer to 3C0004h The actual bulk erase function is a self-timed operation. Once the erase has started (falling edge of the 4th SCLK after the NOP command), serial execution will cease until the erase completes (parameter P11). During this time, SCLK may continue to toggle but SDATA must be held low. Write 80h to Erase Entire Device The code sequence to erase the entire device is shown in Table 3-2 and the flowchart is shown in Figure 3-1. Note: Core Instruction Delay P11+P10 Time A bulk erase is the only way to reprogram code protect bits from an on-state to an off-state. Non-code protect bits are not returned to default settings by a bulk erase. These bits should be programmed to ones, as outlined in Section 3.6, "Configuration Bits Programming". FIGURE 3-2: Done BULK ERASE TIMING P10 1 2 3 4 2 1 15 16 1 2 3 4 1 2 15 16 1 2 3 4 1 2 n n SCLK P5 SDATA 0 0 1 1 4-bit Command P5A 0 0 0 16-bit Data Payload 0 P5 0 0 0 0 4-bit Command P5A 0 0 0 0 16-bit Data Payload P11 0 0 0 0 4-bit Command Erase Time 16-bit Data Payload SDATA = Input 2010 Microchip Technology Inc. DS30500B-page 9 PIC18F2331/2431/4331/4431 3.1.1 LOW VOLTAGE ICSP BULK ERASE When using low voltage ICSP, the part must be supplied by the voltage specified in parameter #D111 if a bulk erase is to be executed. All other bulk erase details as described above apply. If it is determined that a program memory erase must be performed at a supply voltage below the bulk erase limit, refer to the erase methodology described in Sections 3.1.2 and 3.2.2. If it is determined that a data EEPROM erase must be performed at a supply voltage below the bulk erase limit, follow the methodology described in Section 3.3 and write ones to the array. 3.1.2 ICSP MULTI-PANEL SINGLE ROW ERASE Irrespective of whether high or low voltage ICSP is used, it is possible to erase single row (64 bytes of data) in all panels at once. For example, in the case of a 16-Kbyte device (4 panels), 512 bytes through 64 bytes in each panel can be erased simultaneously during each erase sequence. In this case, the offset of the erase within each panel is the same (see Figure 3-5). Multi-panel single row erase is enabled by appropriately configuring the Programming Control register located at 3C0006h. DS30500B-page 10 The multi-panel single row erase duration is externally timed and is controlled by SCLK. After a "Start Programming" command is issued (4-bit, `1111'), a NOP is issued, where the 4th SCLK is held high for the duration of the programming time, P9. After SCLK is brought low, the programming sequence is terminated. SCLK must be held low for the time specified by parameter P10 to allow high voltage discharge of the memory array. The code sequence to program a PIC18FXX31 device is shown in Table 3-3. The flowchart shown in Figure 3-3 depicts the logic necessary to completely erase a PIC18FXX31 device. The timing diagram that details the "Start Programming" command, and parameters P9 and P10 is shown in Figure 3-6. Note: The TBLPTR register must contain the same offset value when initiating the programming sequence as it did when the write buffers were loaded. 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 TABLE 3-3: ERASE CODE MEMORY CODE SEQUENCE 4-Bit Command Data Payload Core Instruction Step 1: Direct access to config memory. 0000 0000 0000 8E A6 8C A6 86 A6 BSF BSF BSF EECON1, EEPGD EECON1, CFGS EECON1, WREN Step 2: Configure device for multi-panel writes. 0000 0000 0000 0000 0000 0000 1100 0E 6E 0E 6E 0E 6E 00 3C F8 00 F7 06 F6 40 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write 3Ch TBLPTRU 00h TBLPTRH 06h TBLPTRL 40h to 3C0006h to enable multi-panel erase. Step 3: Direct access to code memory and enable erase. 0000 0000 0000 0000 0000 0000 8E 9C 88 6A 6A 6A A6 A6 A6 F8 F7 F6 BSF BCF BSF CLRF CLRF CLRF EECON1, EEPGD EECON1, CFGS EECON1, FREE TBLPTRU TBLPTRH TBLPTRL Step 4: Erase single row of all panels at an offset. 1111 0000 <DummyLSB> <DummyMSB> 00 00 Write 2 dummy bytes and start programming. NOP - hold SCLK high for time P9. Step 5: Repeat step 4, with Address Pointer incremented by 64 until all panels are erased. FIGURE 3-3: MULTI-PANEL SINGLE ROW ERASE CODE MEMORY FLOW Start Addr = 0 Configure Device for Multi-Panel Erase Start Erase Sequence and hold SCLK High Until Done Addr = Addr + 64 Delay P9 + P10 Time for Erase to Occur No All Panels Done? Yes Done 2010 Microchip Technology Inc. DS30500B-page 11 PIC18F2331/2431/4331/4431 3.2 Code Memory Programming Programming code memory is accomplished by first loading data into the appropriate write buffers and then initiating a programming sequence. Each panel in the code memory space (see Figure 2-4) has an 8-byte deep write buffer that must be loaded prior to initiating a write sequence. The actual memory write sequence takes the contents of these buffers and programs the associated EEPROM code memory. Typically, all of the program buffers are written in parallel (Multi-Panel Write mode). In other words, in the case of a 16-Kbyte device (2 panels with an 8-byte buffer per panel), 16 bytes will be simultaneously programmed during each programming sequence. In this case, the offset of the write within each panel is the same (see Figure 3-4). Multi-Panel Write mode is enabled by appropriately configuring the Programming Control register located at 3C0006h. FIGURE 3-4: The programming duration is externally timed and is controlled by SCLK. After a "Start Programming" command is issued (4-bit command, `1111'), a NOP is issued, where the 4th SCLK is held high for the duration of the programming time, P9. After SCLK is brought low, the programming sequence is terminated. SCLK must be held low for the time specified by parameter P10 to allow high voltage discharge of the memory array. The code sequence to program a PIC18FXX31 device is shown in Table 3-4. The flowchart shown in Figure 3-5 depicts the logic necessary to completely write a PIC18FXX31 device. The timing diagram that details the "Start Programming" command, and parameters P9 and P10, is shown in Figure 3-6. Note: The TBLPTR register must contain the same offset value when initiating the programming sequence as it did when the write buffers were loaded. ERASE AND WRITE BOUNDARIES Panel 2 8-byte Write Buffer TBLPTR<21:13> = 1 TBLPTR<2:0> = 7 TBLPTR<2:0> = 6 TBLPTR<2:0> = 5 TBLPTR<2:0> = 4 TBLPTR<2:0> = 3 TBLPTR<2:0> = 2 TBLPTR<2:0> = 1 TBLPTR<2:0> = 0 Erase Region (64 bytes) Offset = TBLPTR<12:3> Offset = TBLPTR<12:6> Panel 1 8-byte Write Buffer TBLPTR<21:13> = 0 TBLPTR<2:0> = 7 TBLPTR<2:0> = 6 TBLPTR<2:0> = 5 TBLPTR<2:0> = 4 TBLPTR<2:0> = 3 TBLPTR<2:0> = 2 TBLPTR<2:0> = 1 TBLPTR<2:0> = 0 Erase Region (64 bytes) Offset = TBLPTR<12:3> Offset = TBLPTR<12:6> Note: TBLPTR = TBLPTRU:TBLPTRH:TBLPTRL. DS30500B-page 12 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 TABLE 3-4: WRITE CODE MEMORY CODE SEQUENCE 4-Bit Command Data Payload Core Instruction Step 1: Direct access to config memory. 0000 0000 0000 8E A6 8C A6 86 A6 BSF BSF BSF EECON1, EEPGD EECON1, CFGS EECON1, WREN Step 2: Configure device for multi-panel writes. 0000 0000 0000 0000 0000 0000 1100 0E 6E 0E 6E 0E 6E 00 3C F8 00 F7 06 F6 40 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write 3Ch TBLPTRU 00h TBLPTRH 06h TBLPTRL 40h to 3C0006h to enable multi-panel writes. BSF BCF EECON1, EEPGD EECON1, CFGS MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write Write Write Write <Addr[21:16]> TBLPTRU <Addr[15:8]> TBLPTRH <Addr[7:0]> TBLPTRL 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes Step 3: Direct access to code memory. 0000 0000 8E A6 9C A6 Step 4: Load write buffer for Panel 1. 0000 0000 0000 0000 0000 0000 1101 1101 1101 1100 0E <Addr[21:16]> 6E F8 0E <Addr[15:8]> 6E F7 0E <Addr[7:0]> 6E F6 <LSB><MSB> <LSB><MSB> <LSB><MSB> <LSB><MSB> Step 5: Repeat for Panel 2. Step 6: Repeat for all but the last panel (N - 1). Step 7: Load write buffer for last panel. 0000 0000 0000 0000 0000 0000 1101 1101 1101 1111 0000 0E <Addr[21:16]> 6E F8 0E <Addr[15:8]> 6E F7 0E <Addr[7:0]> 6E F6 <LSB><MSB> <LSB><MSB> <LSB><MSB> <LSB><MSB> 00 00 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write Write Write Write NOP - <Addr[21:16]> TBLPTRU <Addr[15:8]> TBLPTRH <Addr[7:0]> TBLPTRL 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes and start programming hold SCLK high for time P9 To continue writing data, repeat steps 2 through 5, where the Address Pointer is incremented by 8 in each panel at each iteration of the loop. 2010 Microchip Technology Inc. DS30500B-page 13 PIC18F2331/2431/4331/4431 FIGURE 3-5: PROGRAM CODE MEMORY FLOW Start N=1 LoopCount = 0 Configure Device for Multi-Panel Writes Panel Base Address = (N - 1) x 2000h Addr = Panel Base Address + (8 x LoopCount) Load 8 Bytes to Panel N Write Buffer at <Addr> N=N+1 All Panel Buffers Written? No Yes N=1 LoopCount = LoopCount + 1 Start Write Sequence and Hold SCLK High until Done Delay P9+P10 Time for Write to Occur All Locations Done? No Yes Done FIGURE 3-6: TABLE WRITE AND START PROGRAMMING INSTRUCTION TIMING (1111) P10 1 2 3 4 1 3 2 4 5 6 15 16 1 2 3 4 SCLK 2 3 P5A P5 SDATA 1 P9 1 1 1 1 4-bit Command n n n n n n n n 16-bit Data Payload 0 0 0 0 0 4-bit Command Programming Time 0 0 16-bit Data Payload SDATA = Input DS30500B-page 14 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 3.2.1 SINGLE PANEL PROGRAMMING The programming example presented in Section 3.2 utilizes multi-panel programming. This technique greatly decreases the total amount of time necessary to completely program a device and is the recommended method of completely programming a device. There may be situations, however, where it is advantageous to limit writes to a single panel. In such cases, the user only needs to disable the multi-panel write feature of the device by appropriately configuring the Programming Control register located at 3C0006h. The single panel that will be written will automatically be enabled based on the value of the table pointer. Note: 3.2.2 Even though multi-panel writes are disabled, the user must still fill the 8-byte write buffer for the given panel. MODIFYING CODE MEMORY All of the programming examples up to this point have assumed that the device has been bulk erased prior to programming (see Section 3.1). It may be the case, however, that the user wishes to modify only a section of an already programmed device. The minimum amount of data that can be written to the device is 8 bytes. This is accomplished by placing the device in Single Panel Write mode (see Section 3.2.1), loading the 8-byte write buffer for the panel, and then initiating a write sequence. In this case, however, it is assumed that the address space to be written already has data in it (i.e., it is not blank). 2010 Microchip Technology Inc. The minimum amount of code memory that may be erased at a given time is 64 bytes. Again, the device must be placed in Single Panel Write mode. The EECON1 register must then be used to erase the 64-byte target space prior to writing the data. When using the EECON1 register to act on code memory, the EEPGD bit must be set (EECON1<7> = 1) and the CFGS bit must be cleared (EECON1<6> = 0). The WREN bit must be set (EECON1<2> = 1) to enable writes of any sort (e.g., erases), and this must be done prior to initiating a write sequence. The FREE bit must be set (EECON1<4> = 1) in order to erase the program space being pointed to by the table pointer. The erase sequence is initiated by the setting the WR bit (EECON1<1> = 1). It is strongly recommended that the WREN bit be set only when absolutely necessary. To help prevent inadvertent writes when using the EECON1 register, EECON2 is used to "enable" the WR bit. This register must be sequentially loaded with 55h and then AAh, immediately prior to asserting the WR bit in order for the write to occur. The erase will begin on the falling edge of the 4th SCLK after the WR bit is set. After the erase sequence terminates, SCLK must still be held low for the time specified by parameter #P10 to allow high voltage discharge of the memory array. DS30500B-page 15 PIC18F2331/2431/4331/4431 TABLE 3-5: MODIFYING CODE MEMORY 4-Bit Command Data Payload Core Instruction Step 1: Direct access to config memory. 0000 0000 8E A6 8C A6 BSF BSF EECON1, EEPGD EECON1, CFGS Step 2: Configure device for single panel writes. 0000 0000 0000 0000 0000 0000 1100 0E 6E 0E 6E 0E 6E 00 3C F8 00 F7 06 F6 00 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write 3Ch TBLPTRU 00h TBLPTRH 06h TBLPTRL 00h to 3C0006h to enable single panel writes. Step 3: Direct access to code memory. 0000 0000 8E A6 9C A6 BSF EECON1, EEPGD BCF EECON1, CFGS Step 4: Set the table pointer for the block to be erased. 0000 0000 0000 0000 0000 0000 0E 6E 0E 6E 0E 6E <Addr[21:16]> F8 <Addr[8:15]> F7 <Addr[7:0]> F6 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF <Addr[21:16]> TBLPTRU <Addr[8:15]> TBLPTRH <Addr[7:0]> TBLPTRL Step 5: Enable memory writes and set up an erase. 0000 0000 84 A6 88 A6 BSF EECON1, WREN BSF EECON1, FREE Step 6: Perform required sequence. 0000 0000 0000 0000 0E 6E 0E 6E 55 A7 AA A7 MOVLW MOVWF MOVLW MOVWF 55h EECON2 0AAh EECON2 Step 7: Initiate erase. 0000 0000 82 A6 00 00 BSF EECON1, WR NOP Step 8: Wait for P11+P10 and then disable writes. 0000 94 A6 BCF EECON1, WREN Step 9: Load write buffer for panel. The correct panel will be selected based on the table pointer. 0000 0000 0000 0000 1101 1101 1101 1111 0000 0E <Addr[8:15]> 6E F7 0E <Addr[7:0]> 6E F6 <LSB><MSB> <LSB><MSB> <LSB><MSB> <LSB><MSB> 00 00 MOVLW MOVWF MOVLW MOVWF Write Write Write Write NOP - <Addr[8:15]> TBLPTRH <Addr[7:0]> TBLPTRL 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes and start programming hold SCLK high for time P9 To continue writing data, repeat step 8, where the Address Pointer is incremented by 8 at each iteration of the loop. DS30500B-page 16 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 3.3 FIGURE 3-7: Data EEPROM Programming PROGRAM DATA FLOW Data EEPROM is accessed one byte at a time via an Address Pointer (register pair EEADR:EEADRH) and a data latch (EEDATA). Data EEPROM is written by loading EEADR:EEADRH with the desired memory location, EEDATA with the data to be written, and initiating a memory write by appropriately configuring the EECON1 and EECON2 registers. A byte write automatically erases the location and writes the new data (erase-before-write). Start Set Address Set Data Enable Write When using the EECON1 register to perform a data EEPROM write, both the EEPGD and CFGS bits must be cleared (EECON1<7:6> = 00). The WREN bit must be set (EECON1<2> = 1) to enable writes of any sort, and this must be done prior to initiating a write sequence. The write sequence is initiated by setting the WR bit (EECON1<1> = 1). It is strongly recommended that the WREN bit be set only when absolutely necessary. Unlock Sequence 55h - EECON2 AAh - EECON2 Start Write Sequence To help prevent inadvertent writes when using the EECON1 register, EECON2 is used to "enable" the WR bit. This register must be sequentially loaded with 55h and then AAh, immediately prior to asserting the WR bit in order for the write to occur. Yes No Done ? The write begins on the falling edge of the 4th SCLK after the WR bit is set. It ends when the WR bit is cleared by hardware. Yes Done After the programming sequence terminates, SCLK must still be held low for the time specified by parameter P10 to allow high voltage discharge of the memory array. FIGURE 3-8: No WR bit Clear ? DATA EEPROM WRITE TIMING P10 1 2 3 4 1 2 1 15 16 2 SCLK P5 SDATA 0 0 0 P5A 0 n 4-bit Command BSF EECON1, WR Poll WR bit, Repeat until Clear (see below) n 16-bit Data Payload SDATA = Input 1 2 3 4 1 2 15 16 1 2 3 4 1 2 15 16 SCLK P5 P5A P5 P5A Poll WR bit SDATA 0 0 0 0 0 4-bit Command MOVF EECON1, W, 0 0 0 4-bit Command SDATA = Input 2010 Microchip Technology Inc. 0 MOVWF TABLAT Shift Out Data (see Figure 4-4) SDATA = Output DS30500B-page 17 PIC18F2331/2431/4331/4431 TABLE 3-6: PROGRAMMING DATA MEMORY 4-Bit Command Data Payload Core Instruction Step 1: Direct access to data EEPROM. 0000 0000 9E A6 9C A6 BCF EECON1, EEPGD BCF EECON1, CFGS Step 2: Set the data EEPROM Address Pointer. 0000 0000 0000 0000 0E 6E OE 6E <Addr> A9 <AddrH> AA MOVLW MOVWF MOVLW MOVWF <Addr> EEADR <AddrH> EEADRH Step 3: Load the data to be written. 0000 0000 0E <Data> 6E A8 MOVLW <Data> MOVWF EEDATA Step 4: Enable memory writes. 0000 84 A6 BSF EECON1, WREN Step 5: Perform required sequence. 0000 0000 0000 0000 0E 6E 0E 6E 55 A7 AA A7 MOVLW MOVWF MOVLW MOVWF 0X55 EECON2 0XAA EECON2 Step 6: Initiate write. 0000 82 A6 BSF EECON1, WR Step 7: Poll WR bit, repeat until the bit is clear. 0000 0000 0010 50 A6 6E F5 <LSB><MSB> MOVF EECON1, W, 0 MOVWF TABLAT Shift out data(1) Step 8: Disable writes. 0000 94 A6 BCF EECON1, WREN Repeat steps 2 through 8 to write more data. Note 1: See Figure 4-4 for details on shift out data timing. DS30500B-page 18 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 3.4 ID Location Programming Note: The ID locations are programmed much like the code memory except that multi-panel writes must be disabled. The single panel that will be written will automatically be enabled based on the value of the table pointer. The ID registers are mapped in addresses 200000h through 200007h. These locations read out normally even after code protection. TABLE 3-7: Even though multi-panel writes are disabled, the user must still fill the 8-byte data buffer for the panel. Table 3-7 demonstrates the code sequence required to write the ID locations. WRITE ID SEQUENCE 4-Bit Command Data Payload Core Instruction Step 1: Direct access to config memory. 0000 0000 8E A6 8C A6 BSF BSF EECON1, EEPGD EECON1, CFGS Step 2: Configure device for single panel writes. 0000 0000 0000 0000 0000 0000 1100 0E 6E 0E 6E 0E 6E 00 3C F8 00 F7 06 F6 00 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write 3Ch TBLPTRU 00h TBLPTRH 06h TBLPTRL 00h to 3C0006h to enable single panel writes. BSF BCF EECON1, EEPGD EECON1, CFGS Step 3: Direct access to code memory. 0000 0000 8E A6 9C A6 Step 4: Load write buffer. Panel will be automatically determined by address. 0000 0000 0000 0000 0000 0000 1101 1101 1101 1111 0000 0E 20 6E F8 0E 00 6E F7 0E 00 6E F6 <LSB><MSB> <LSB><MSB> <LSB><MSB> <LSB><MSB> 00 00 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Write Write Write Write NOP - 20h TBLPTRU 00h TBLPTRH 00h TBLPTRL 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes and post-increment address by 2 2 bytes and start programming hold SCLK high for time P9 In order to modify the ID locations, refer to the methodology described in Section 3.2.2, "Modifying Code Memory". As with code memory, the ID locations must be erased before modified. 2010 Microchip Technology Inc. DS30500B-page 19 PIC18F2331/2431/4331/4431 3.5 Boot Block Programming 3.6 The boot block segment is programmed in exactly the same manner as the ID locations (see Section 3.4). Multi-panel writes must be disabled so that only addresses in the range 0000h to 01FFh will be written. The code sequence detailed in Table 3-7 should be used, except that the address data used in "Step 2" will be in the range 000000h to 0001FFh. TABLE 3-8: Configuration Bits Programming Unlike code memory, the configuration bits are programmed a byte at a time. The "Table Write, Begin Programming" 4-bit command (1111) is used but only 8 bits of the following 16-bit payload will be written. The LSB of the payload will be written to even addresses, and the MSB will be written to odd addresses. The code sequence to program two consecutive configuration locations is shown in Table 3-8. SET ADDRESS POINTER TO CONFIGURATION LOCATION 4-Bit Command Data Payload Core Instruction Step 1: Direct access to config memory. 0000 0000 8E A6 8C A6 BSF BSF EECON1, EEPGD EECON1, CFGS GOTO 100000h Step 2: Position the program counter(1). 0000 0000 EF 00 F8 00 Step 3(2): Set table pointer for config byte to be written. Write even/odd addresses. 0000 0000 0000 0000 0000 0000 1111 0000 0000 1111 0000 Note 1: 2: 0E 30 6E F8 0E 00 6E F7 0E 00 6E F6 <LSB><MSB ignored> 00 00 2A F6 <LSB ignored><MSB> 00 00 MOVLW 30h MOVWF TBLPTRU MOVLW 00h MOVWF TBLPRTH MOVLW 00h MOVWF TBLPTRL Load 2 bytes and start programming NOP - hold SCLK high for time P9 INCF TBLPTRL Load 2 bytes and start programming NOP - hold SCLK high for time P9 If the code protection bits are programmed while the program counter resides in the same block, then the interaction of code protection logic may prevent further table write. To avoid this situation, move the program counter outside the code protection area (e.g., GOTO 100000h). Enabling the write protection of configuration bits (WRTC = 0 in CONFIG6H) will prevent further writing of configuration bits. Always write all the configuration bits before enabling the write protection for configuration bits. FIGURE 3-9: DS30500B-page 20 CONFIGURATION PROGRAMMING FLOW Start Start Load Even Configuration Address Load Odd Configuration Address Program LSB Program MSB Delay P9 Time for Write Delay P9 Time for Write Done Done 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 4.0 READING THE DEVICE 4.1 Read Code Memory, ID Locations, and Configuration Bits The 4-bit command is shifted in LSb first. The table read is executed during the next 8 clocks, then shifted out on SDATA during the last 8 clocks, LSb to MSb. A delay of P6 must be introduced after the falling edge of the 8th SCLK of the operand to allow SDATA to transition from an input to an output. During this time, SCLK must be held low (see Figure 4-1). This operation also increments the table pointer by one, pointing to the next byte in code memory for the next read. Code memory is accessed one byte at a time via the 4-bit command, `1001' (table read, post-increment). The contents of memory pointed to by the table pointer (TBLPTRU:TBLPTRH:TBLPTRL) are loaded into the table latch and then serially output on SDATA. TABLE 4-1: This technique will work to read any memory in the 000000h to 3FFFFFh address space, so it also applies to the reading of the ID and Configuration registers. READ CODE MEMORY SEQUENCE 4-Bit Command Data Payload Core Instruction Step 1: Set table pointer. 0000 0000 0000 0000 0000 0000 0E 6E 0E 6E 0E 6E <Addr[21:16]> F8 <Addr[15:8]> F7 <Addr[7:0]> F6 MOVLW MOVWF MOVLW MOVWF MOVLW MOVWF Addr[21:16] TBLPTRU <Addr[15:8]> TBLPTRH <Addr[7:0]> TBLPTRL Step 2: Read memory into table latch and then shift out on SDATA, LSb to MSb. 1001 00 00 FIGURE 4-1: 1 TBLRD *+ TABLE READ POST-INCREMENT INSTRUCTION TIMING (1001) 2 3 4 1 2 3 4 5 6 7 9 8 10 11 12 13 14 15 1 16 2 3 4 SCLK P5 P6 P5A P14 SDATA 1 0 0 LSb 1 1 2 3 4 5 6 Shift Data Out SDATA = Input 2010 Microchip Technology Inc. SDATA = Output MSb n n n n Fetch Next 4-bit Command SDATA = Input DS30500B-page 21 PIC18F2331/2431/4331/4431 4.2 Verify Code Memory and ID Locations The verify step involves reading back the code memory space and comparing against the copy held in the programmer's buffer. Memory reads occur a single byte at a time, so two bytes must be read to compare against the word in the programmer's buffer. Refer to Section 4.1 for implementation details of reading code memory. FIGURE 4-2: The table pointer must be manually set to 200000h (base address of the ID locations) once the code memory has been verified. The post-increment feature of the table read 4-bit command may not be used to increment the table pointer beyond the code memory space. In a 16-Kbyte device, for example, a post-increment read of address 3FFFh will wrap the table pointer back to 0000h, rather than point to unimplemented address 4000h. VERIFY CODE MEMORY FLOW Start Set Pointer = 0 Set Pointer = 200000h Read Low Byte Read Low Byte Read High byte Read High byte Does Word = Expect Data? Does No Word = Expect Data? Failure, Report Error Yes No All Code Memory Verified? Yes No Failure, Report Error Yes No All ID Locations Verified? Yes Done DS30500B-page 22 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 4.3 Verify Configuration Bits FIGURE 4-3: READ DATA EEPROM FLOW A configuration address may be read and output on SDATA via the 4-bit command, `1001'. Configuration data is read and written in a byte-wise fashion, so it is not necessary to merge two bytes into a word prior to a compare. The result may then be immediately compared to the appropriate configuration data in the programmer's memory for verification. Refer to Section 4.1 for implementation details of reading configuration data. 4.4 Start Set Address Read Byte Read Data EEPROM Memory Data EEPROM is accessed one byte at a time via an Address Pointer (register pair EEADR:EEADRH) and a data latch (EEDATA). Data EEPROM is read by loading EEADR:EEADRH with the desired memory location and initiating a memory read by appropriately configuring the EECON1 register. The data will be loaded into EEDATA, where it may be serially output on SDATA via the 4-bit command, `0010' (Shift Out Data Holding register). A delay of P6 must be introduced after the falling edge of the 8th SCLK of the operand to allow SDATA to transition from an input to an output. During this time, SCLK must be held low (see Figure 4-4). Move to TABLAT Shift Out Data No Done ? Yes Done The command sequence to read a single byte of data is shown in Table 4-2. 2010 Microchip Technology Inc. DS30500B-page 23 PIC18F2331/2431/4331/4431 TABLE 4-2: READ DATA EEPROM MEMORY 4-Bit Command Data Payload Core Instruction Step 1: Direct access to data EEPROM. 0000 0000 9E A6 9C A6 BCF EECON1, EEPGD BCF EECON1, CFGS Step 2: Set the data EEPROM Address Pointer. 0000 0000 0000 0000 0E 6E OE 6E <Addr> A9 <AddrH> AA MOVLW MOVWF MOVLW MOVWF <Addr> EEADR <AddrH> EEADRH Step 3: Initiate a memory read. 0000 80 A6 BSF EECON1, RD Step 4: Load data into the Serial Data Holding register. 0000 0000 0010 Note 1: 50 A8 6E F5 <LSB><MSB> MOVF EEDATA, W, 0 MOVWF TABLAT Shift Out Data(1) The <LSB> is undefined. The <MSB> is the data. FIGURE 4-4: 1 SHIFT OUT DATA HOLDING REGISTER TIMING (0010) 2 3 4 1 2 3 4 5 6 7 9 8 10 11 12 13 14 15 16 1 2 3 4 SCLK P5 P6 P5A P14 SDATA 0 1 0 LSb 1 0 2 3 4 5 6 Shift Data Out SDATA = Input DS30500B-page 24 SDATA = Output MSb n n n n Fetch Next 4-bit Command SDATA = Input 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 4.5 Verify Data EEPROM A data EEPROM address may be read via a sequence of core instructions (4-bit command, `0000') and then output on SDATA via the 4-bit command, `0010' (Shift Out Data Holding register). The result may then be immediately compared to the appropriate data in the programmer's memory for verification. Refer to Section 4.4 for implementation details of reading data EEPROM. 4.6 Given that "Blank Checking" is merely code and data EEPROM verification with FFh expect data, refer to Section 4.4 and Section 4.2 for implementation details. FIGURE 4-5: BLANK CHECK FLOW Start Blank Check Device Blank Check The term "Blank Check" means to verify that the device has no programmed memory cells. All memories must be verified: code memory, data EEPROM, ID locations, and configuration bits. The Device ID registers (3FFFFEh:3FFFFFh) should be ignored. Is Device Blank? A "blank" or "erased" memory cell will read as a `1'. So, "Blank Checking" a device merely means to verify that all bytes read as FFh except the configuration bits. Unused (reserved) configuration bits will read `0' (programmed). Refer to Table 5-2 and Table 5-3 for blank configuration expect data for the various PIC18FXX31 devices. Abort 2010 Microchip Technology Inc. Yes Continue No DS30500B-page 25 PIC18F2331/2431/4331/4431 5.0 CONFIGURATION WORD 5.3 The PIC18FXX31 devices have several configuration words. These bits can be set or cleared to select various device configurations. All other memory areas should be programmed and verified prior to setting configuration words. These bits may be read out normally even after read or code protection. 5.1 The LVP bit in Configuration register, CONFIG4L, enables low voltage ICSP programming. The LVP bit defaults to a `1' from the factory. If Low Voltage Programming mode is not used, the LVP bit can be programmed to a `0' and RB5/PGM becomes a digital I/O pin. However, the LVP bit may only be programmed by entering the High Voltage ICSP mode, where MCLR/VPP is raised to VIHH. Once the LVP bit is programmed to a `0', only the High Voltage ICSP mode is available and only the High Voltage ICSP mode can be used to program the device. ID Locations A user may store identification information (ID) in eight ID locations mapped in 200000h:200007h. It is recommended that the Most Significant nibble of each ID be 0Fh. In doing so, if the user code inadvertently tries to execute from the ID space, the ID data will execute as NOP. 5.2 Note 1: The normal ICSP mode is always available, regardless of the state of the LVP bit, by applying VIHH to the MCLR/VPP pin. Device ID Word 2: While in Low Voltage ICSP mode, the RB5 pin can no longer be used as a general purpose I/O. The device ID word for the PIC18FXX31 is located at 3FFFFEh:3FFFFFh. These bits may be used by the programmer to identify what device type is being programmed and read out normally even after code or read protection. TABLE 5-1: Low Voltage Programming (LVP) Bit DEVICE ID VALUES Device ID Value Device DEVID2 DEVID1 08h E0h PIC18F2431 08h C0h PIC18F4331 08h A0h PIC18F4431 08h 80h PIC18F2331 Note: The `x's in DEVID1 contain the device revision code. DS30500B-page 26 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 TABLE 5-2: PIC18FX431 CONFIGURATION BITS AND DEVICE IDS File Name Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Default/ Unprogrammed Value 300001h CONFIG1H IESO FCMEM -- -- FOSC3 FOSC2 FOSC1 FOSC0 1100 1111 300002h CONFIG2L -- -- -- -- BORV1 BORV0 BODEN PWRTEN 0000 1111 300003h CONFIG2H -- -- WINEN WDPS3 WDTPS0 WDTEN 0011 1111 300004h CONFIG3L -- -- T5REN 300005h CONFIG3H MCLRE -- -- 300006h CONFIG4L DEBUG -- -- -- -- 300008h CONFIG5L -- -- -- -- CP3 300009h CONFIG5H CPD CPB -- -- -- -- -- -- 1100 0000 30000Ah CONFIG6L -- -- -- -- WRT3 WRT2 WRT1 WRT0 0000 1111 30000Bh CONFIG6H WRTD WRTB WRTC -- -- -- -- -- 1110 0000 30000Ch CONFIG7L -- -- -- -- EBTR3 EBTR2 EBTR1 EBTR0 0000 1111 30000Dh CONFIG7H -- EBTRB -- -- -- -- -- -- 0100 0000 3FFFFEh DEVID1 DEV2 DEV1 DEV0 REV4 REV3 REV2 REV1 REV0 Table 5-1 3FFFFFh DEVID2 DEV10 DEV9 DEV8 DEV7 DEV6 DEV5 DEV4 DEV3 Table 5-1 Legend: x = unknown, u = unchanged, - = unimplemented, q = value depends on condition. Shaded cells are unimplemented, read as `0'. Bit 0 Default/ Unprogrammed Value TABLE 5-3: HPOL WDTPS2 WDTPS1 LPOL EXCLKMX PWM4MX PWMPIN -- -- 0011 1100 SSPMX -- FLTAMX 1001 1101 LVP -- STVREN 1000 0101 CP2 CP1 CP0 0000 1111 PIC18FX331 CONFIGURATION BITS AND DEVICE IDS File Name Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 300001h CONFIG1H IESO FCMEM -- -- FOSC3 FOSC2 FOSC1 FOSC0 1100 1111 300002h CONFIG2L -- -- -- -- BORV1 BORV0 BODEN PWRTEN 0000 1111 300003h CONFIG2H -- -- WINEN WDPS3 300004h CONFIG3L -- -- T5REN HPOL 300005h CONFIG3H MCLRE -- -- 300006h CONFIG4L DEBUG -- -- -- -- 300008h CONFIG5L -- -- -- -- -- 300009h CONFIG5H CPD CPB -- -- WDTPS2 WDTPS1 WDTPS0 WDTEN 0011 1111 PWMPIN -- -- 0011 1100 SSPMX -- FLTAMX 1001 1101 LVP -- STVREN 1000 0101 -- CP1 CP0 0000 0011 -- -- -- -- 1100 0000 0000 0011 LPOL EXCLKMX PWM4MX 30000Ah CONFIG6L -- -- -- -- -- -- WRT1 WRT0 30000Bh CONFIG6H WRTD WRTB WRTC -- -- -- -- -- 1110 0000 30000Ch CONFIG7L -- -- -- -- -- -- EBTR1 EBTR0 0000 0011 30000Dh CONFIG7H -- EBTRB -- -- -- -- -- -- 0100 0000 3FFFFEh DEVID1 DEV2 DEV1 DEV0 REV4 REV3 REV2 REV1 REV0 Table 5-1 3FFFFFh DEVID2 DEV10 DEV9 DEV8 DEV7 DEV6 DEV5 DEV4 DEV3 Table 5-1 Legend: x = unknown, u = unchanged, - = unimplemented, q = value depends on condition. Shaded cells are unimplemented, read as `0'. 2010 Microchip Technology Inc. DS30500B-page 27 PIC18F2331/2431/4331/4431 TABLE 5-4: Bit Name PIC18FXX31 CONFIGURATION BIT DESCRIPTIONS Configuration Words Description IESO CONFIG1H Internal External Switch Over bit 1 = Internal External Switch Over mode enabled 0 = Internal External Switch Over mode disabled FCMEN CONFIG1H Fail-Safe Clock Monitor Enable bit 1 = Fail-Safe Clock Monitor enabled 0 = Fail-Safe Clock Monitor disabled FOSC<3:0> CONFIG1H Oscillator Selection bits 11xx = External RC oscillator, CLKO function on RA6 101x = External RC oscillator, CLKO function on RA6 1001 = Internal RC oscillator, CLKO function on RA6, and port function on RA7 1000 = Internal RC oscillator, port function on RA6, and port function on RA7 0111 = External RC oscillator, port function on RA6 0110 = HS oscillator, PLL enabled (clock frequency = 4 x FOSC1) 0101 = EC oscillator, port function on RA6 0100 = EC oscillator, CLKO function on RA6 0011 = External RC oscillator, CLKO function on RA6 0010 = HS oscillator 0001 = XT oscillator 0000 = LP oscillator BORV<1:0> CONFIG2L Brown-out Reset Voltage bits 11 = VBOR set to 2.0V 10 = VBOR set to 2.7V 01 = VBOR set to 4.2V 00 = VBOR set to 4.5V BOREN CONFIG2L Brown-out Reset Enable bit 1 = Brown-out Reset enabled 0 = Disabled PWRTEN CONFIG2L Power-up Timer Enable bit 1 = PWRT disabled 0 = Enabled Note 1: 2: 3: 4: 5: Polarity control bits HPOL and LPOL define PWM signal output active and inactive states, PWM states generated by the fault inputs or PWM manual override. PWM6 and PWM7 output channels are only available on the PIC18F4X21 devices. When PWMPIN = 0, PWMEN<2:0> = 101 if device has eight PWM output pins (40 and 44-pin devices) and PWMEN<2:0> = 100 if the device has six PWM output pins (28-pin device). PWM output polarity is defined by HPOL and LPOL. This bit is reserved on PIC18F2X31 devices and should be maintained set (i.e., equal to `1'). For PIC18FX431 devices only. DS30500B-page 28 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 TABLE 5-4: Bit Name PIC18FXX31 CONFIGURATION BIT DESCRIPTIONS (CONTINUED) Configuration Words Description WINEN CONFIG2H Watchdog Timer Window Enable bit 1 = Enable window comparison 0 = Disable window comparison WDPS<3:0> CONFIG2H Watchdog Timer Postscale Select bits 1111 = 1:32,768 1110 = 1:16,384 1101 = 1:8,192 1100 = 1:4,096 1011 = 1:2,048 1010 = 1:1,024 1001 = 1:512 1000 = 1:256 0111 = 1:128 0110 = 1:64 0101 = 1:32 0100 = 1:16 0011 = 1:8 0010 = 1:4 0001 = 1:2 0000 = 1:1 WDTEN CONFIG2H Watchdog Timer Enable bit 1 = WDT enabled 0 = WDT disabled (control is placed on the SWDTEN bit in WDTCON register) GPTREN CONFIG3L GPT Reset upon CAP1 Special Event Trigger bit 1 = Special Event Reset enable (RESEN in TMR5CON register) is inactive. 0 = Special Event Reset enable (RESEN in TMR5CON register) is active and can enable the special event trigger signal from IC1 to reset the TMR5 time base. HPOL(1) CONFIG3L High Side Transistors Polarity bit (i.e., Odd PWM Output Polarity Control bit ) 1 = PWM 1, 3, 5, and 7 are active high (default) 0 = PWM 1, 3, 5, and 7 are active low LPOL(1) CONFIG3L Low Side Transistors Polarity bit (i.e., Even PWM Output Polarity Control bit) 1 = PWM 0, 2, 4, and 6 are active high (default) 0 = PWM 0, 2, 4, and 6 are active low PWMPIN(2) CONFIG3L PWM Output Pins RESET State Control bit 1 = PWM outputs disabled upon RESET (default) 0 = PWM outputs drive active states upon RESET(3) Note 1: 2: 3: 4: 5: Polarity control bits HPOL and LPOL define PWM signal output active and inactive states, PWM states generated by the fault inputs or PWM manual override. PWM6 and PWM7 output channels are only available on the PIC18F4X21 devices. When PWMPIN = 0, PWMEN<2:0> = 101 if device has eight PWM output pins (40 and 44-pin devices) and PWMEN<2:0> = 100 if the device has six PWM output pins (28-pin device). PWM output polarity is defined by HPOL and LPOL. This bit is reserved on PIC18F2X31 devices and should be maintained set (i.e., equal to `1'). For PIC18FX431 devices only. 2010 Microchip Technology Inc. DS30500B-page 29 PIC18F2331/2431/4331/4431 TABLE 5-4: Bit Name PIC18FXX31 CONFIGURATION BIT DESCRIPTIONS (CONTINUED) Configuration Words Description MCLRE CONFIG3H MCLR Pin Enable bit 1 = MCLR pin enabled; RE3 input pin disabled 0 = RE3 input pin enabled; MCLR disabled EXCLKMX(4) CONFIG3H TMR0/GPCKI External Clock Mux bit 1 = TMR0/T5CKI external clock input is multiplexed with RC3 0 = TMR0/T5CKI external clock input is multiplexed with RD0 PWM4MX(4) CONFIG3H PWM4 Mux bit 1 = PWM4 output is multiplexed with RB5 0 = PWM4 output is multiplexed with RD5 SSPMX(4) CONFIG3H SSP I/O Mux bit 1 = SCK/SCL clocks and SDA/SDI data are multiplexed with RC5 and RC4, respectively. SDO output is multiplexed with RC7. 0 = SCK/SCL clocks and SDA/SDI data are multiplexed with RD3 and RD2, respectively. SDO output is multiplexed with RD1. FLTAMX(4) CONFIG3H FLTA Mux bit 1 = FLTA input is multiplexed with RC1 0 = FLTA input is multiplexed with RD4 BKBUG CONFIG4L Background Debugger Enable bit 1 = Background debugger disabled (RB6,RB7 have I/O port function) 0 = Background debugger functions enabled (RB6, RB7 have ICSP serial communication function) LVP CONFIG4L Low Voltage Programming Enable bit 1 = Low voltage programming enabled 0 = Low voltage programming disabled STVREN CONFIG4L Stack Overflow Reset Enable bit 1 = RESET on stack overflow/underflow enabled 0 = RESET on stack overflow/underflow disabled CP3(5) CONFIG5L Code Protection bit 1 = Block 3 (003000h-003FFFh) not code protected 0 = Block 3 (003000h-003FFFh) code protected CP2(5) CONFIG5L Code Protection bit 1 = Block 2 (002000h-002FFFh) not code protected 0 = Block 2 (002000h-002FFFh) code protected CP1 CONFIG5L Code Protection bit 1 = Block 1 (001000h-001FFFh) not code protected 0 = Block 1 (001000h-001FFFh) code protected CP0 CONFIG5L Code Protection bit 1 = Block 0 (000200h-000FFFh) not code protected 0 = Block 0 (000200h-000FFFh) code protected Note 1: 2: 3: 4: 5: Polarity control bits HPOL and LPOL define PWM signal output active and inactive states, PWM states generated by the fault inputs or PWM manual override. PWM6 and PWM7 output channels are only available on the PIC18F4X21 devices. When PWMPIN = 0, PWMEN<2:0> = 101 if device has eight PWM output pins (40 and 44-pin devices) and PWMEN<2:0> = 100 if the device has six PWM output pins (28-pin device). PWM output polarity is defined by HPOL and LPOL. This bit is reserved on PIC18F2X31 devices and should be maintained set (i.e., equal to `1'). For PIC18FX431 devices only. DS30500B-page 30 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 TABLE 5-4: Bit Name PIC18FXX31 CONFIGURATION BIT DESCRIPTIONS (CONTINUED) Configuration Words Description CPD CONFIG5H Code Protection bit Data EEPROM 1 = Data EEPROM not code protected 0 = Data EEPROM code protected CPB CONFIG5H Code Protection bit 1 = Boot block (000000-0001FFh) not code protected 0 = Boot block (000000-0001FFh) code protected WRT3(5) CONFIG6L Write Protection bit 1 = Block 3 (003000h-003FFFh) not write protected 0 = Block 3 (003000h-003FFFh) write protected WRT2(5) CONFIG6L Write Protection bit 1 = Block 2 (002000h-002FFFh) not write protected 0 = Block 2 (002000h-002FFFh) write protected WRT1 CONFIG6L Write Protection bit 1 = Block 1 (001000h-001FFFh) not write protected 0 = Block 1 (001000h-001FFFh) write protected WRT0 CONFIG6L Write Protection bit 1 = Block 0 (000200h-000FFFh) not write protected 0 = Block 0 (000200h-000FFFh) write protected WRTD CONFIG6H Write Protection bit Data EEPROM 1 = Data EEPROM not write protected 0 = Data EEPROM write protected WRTB CONFIG6H Write Protection bit 1 = Boot block (000000h-0001FFh) not write protected 0 = Boot block (000000h-0001FFh) write protected WRTC CONFIG6H Write Protection bit(1) 1 = Configuration registers (300000h-3000FF) not write protected 0 = Configuration registers (300000h-3000FF) write protected Note 1: 2: 3: 4: 5: Polarity control bits HPOL and LPOL define PWM signal output active and inactive states, PWM states generated by the fault inputs or PWM manual override. PWM6 and PWM7 output channels are only available on the PIC18F4X21 devices. When PWMPIN = 0, PWMEN<2:0> = 101 if device has eight PWM output pins (40 and 44-pin devices) and PWMEN<2:0> = 100 if the device has six PWM output pins (28-pin device). PWM output polarity is defined by HPOL and LPOL. This bit is reserved on PIC18F2X31 devices and should be maintained set (i.e., equal to `1'). For PIC18FX431 devices only. 2010 Microchip Technology Inc. DS30500B-page 31 PIC18F2331/2431/4331/4431 TABLE 5-4: Bit Name PIC18FXX31 CONFIGURATION BIT DESCRIPTIONS (CONTINUED) Configuration Words Description EBTR3(5) CONFIG7L Table Read Protection bit 1 = Block 3 (003000h-003FFFh) not protected from table reads executed in other blocks 0 = Block 3 (003000h-003FFFh) protected from table reads executed in other blocks EBTR2(5) CONFIG7L Table Read Protection bit 1 = Block 2 (002000h-002FFFh) not protected from table reads executed in other blocks 0 = Block 2 (002000h-002FFFh) protected from table reads executed in other blocks EBTR1 CONFIG7L Table Read Protection bit 1 = Block 1 (001000h-001FFFh) not protected from table reads executed in other blocks 0 = Block 1 (001000h-001FFFh) protected from table reads executed in other blocks EBTR0 CONFIG7L Table Read Protection bit 1 = Block 0 (000200h-000FFFh) not protected from table reads executed in other blocks 0 = Block 0 (000200h-000FFFh) protected from table reads executed in other blocks EBTRB CONFIG7H Table Read Protection bit 1 = Boot block (000000h-0001FFh) not protected from table reads executed in other blocks 0 = Boot block (000000h-0001FFh) protected from table reads executed in other blocks DEV<2:0> DEVID1 Device ID bits These bits are used with the DEV<10:3> bits in the Device ID Register 2 to identify the part number. REV<4:0> DEVID1 Revision ID bits These bits are used to indicate the device revision. DEV<10:3> DEVID2 Device ID bits These bits are used with the DEV<2:0> bits in the Device ID Register 1 to identify the part number. Note 1: 2: 3: 4: 5: Polarity control bits HPOL and LPOL define PWM signal output active and inactive states, PWM states generated by the fault inputs or PWM manual override. PWM6 and PWM7 output channels are only available on the PIC18F4X21 devices. When PWMPIN = 0, PWMEN<2:0> = 101 if device has eight PWM output pins (40 and 44-pin devices) and PWMEN<2:0> = 100 if the device has six PWM output pins (28-pin device). PWM output polarity is defined by HPOL and LPOL. This bit is reserved on PIC18F2X31 devices and should be maintained set (i.e., equal to `1'). For PIC18FX431 devices only. DS30500B-page 32 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 5.4 Embedding Configuration Word Information in the HEX File To allow portability of code, a PIC18FXX31 programmer is required to read the configuration word locations from the HEX file. If configuration word information is not present in the HEX file, then a simple warning message should be issued. Similarly, while saving a HEX file, all configuration word information must be included. An option to not include the configuration word information may be provided. When embedding configuration word information in the HEX file, it should start at address 300000h. Microchip Technology Inc. feels strongly that this feature is important for the benefit of the end customer. 2010 Microchip Technology Inc. 5.5 Checksum Computation The checksum is calculated by summing the following: * The contents of all code memory locations * The configuration word, appropriately masked * ID locations The Least Significant 16 bits of this sum are the checksum. Table 5-5 (pages 34 through 36) describes how to calculate the checksum for each device. Note 1: The checksum calculation differs depending on the code protect setting. Since the code memory locations read out differently depending on the code protect setting, the table describes how to manipulate the actual code memory values to simulate the values that would be read from a protected device. When calculating a checksum by reading a device, the entire code memory can simply be read and summed. The configuration word and ID locations can always be read. DS30500B-page 33 PIC18F2331/2431/4331/4431 TABLE 5-5: Device CHECKSUM COMPUTATION Code Protect Checksum Blank Value 0xAA at 0 and Max Address None SUM(0000:01FF)+SUM(0200:0FFF)+SUM(1000:1FFF)+ (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 0003)+ (CONFIG9 & 00C0)+(CONFIG10 & 0003)+(CONFIG11 & 00E0)+ (CONFIG12 & 0003)+(CONFIG13 & 0040) E464 E3BA Boot Block SUM(0200:0FFF)+SUM(1000:1FFF)+(CONFIG0 & 0000)+ (CONFIG1 & 00CF)+(CONFIG2 & 000F)+(CONFIG3 & 003F)+ (CONFIG4 & 003C)+(CONFIG5 & 009D)+(CONFIG6 & 0085)+ (CONFIG7 & 0000)+(CONFIG8 & 0003)+(CONFIG9 & 00C0)+ (CONFIG10 & 0003)+(CONFIG11 & 00E0)+(CONFIG12 & 0003)+ (CONFIG13 & 0040)+SUM(IDs) E640 E5F5 Boot Block/ Block 0 (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 0003)+ (CONFIG9 & 00C0)+(CONFIG10 & 0003)+(CONFIG11 & 00E0)+ (CONFIG12 & 0003)+(CONFIG13 & 0040)+SUM(IDs) 043D 0447 All (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 0003)+ (CONFIG9 & 00C0)+(CONFIG10 & 0003)+(CONFIG11 & 00E0)+ (CONFIG12 & 0003)+(CONFIG13 & 0040)+SUM(IDs) 043D 0447 PIC18F2331 Legend: Item CFGW = SUM[a:b] = SUM_ID = + = & = DS30500B-page 34 Description Configuration Word Sum of locations, a to b inclusive Byte-wise sum of lower four bits of all customer ID locations Addition Bit-wise AND 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 TABLE 5-5: Device CHECKSUM COMPUTATION (CONTINUED) Code Protect Checksum Blank Value 0xAA at 0 and Max Address None SUM(0000:01FF)+SUM(0200:0FFF)+SUM(1000:1FFF)+ SUM(2000:2FFF)+SUM(3000:3FFF)+(CONFIG0 & 0000)+ (CONFIG1 & 00CF)+(CONFIG2 & 000F)+(CONFIG3 & 003F)+ (CONFIG4 & 003C)+(CONFIG5 & 009D)+(CONFIG6 & 0085)+ (CONFIG7 & 0000)+(CONFIG8 & 000F)+(CONFIG9 & 00C0)+ (CONFIG10 & 000F)+(CONFIG11 & 00E0)+(CONFIG12 & 000F)+ (CONFIG13 & 0040) C488 C3DE Boot Block SUM(0200:0FFF)+SUM(1000:1FFF)+SUM(2000:2FFF)+ SUM(3000:3FFF)+(CONFIG0 & 0000)+(CONFIG1 & 00CF)+ (CONFIG2 & 000F)+(CONFIG3 & 003F)+(CONFIG4 & 003C)+ (CONFIG5 & 009D)+(CONFIG6 & 0085)+(CONFIG7 & 0000)+ (CONFIG8 & 000F)+(CONFIG9 & 00C0)+(CONFIG10 & 000F)+ (CONFIG11 & 00E0)+(CONFIG12 & 000F)+(CONFIG13 & 0040)+ SUM(IDs) C668 C61D Boot Block/ Block 0 SUM(2000:2FFF)+SUM(3000:3FFF)+(CONFIG0 & 0000)+ (CONFIG1 & 00CF)+(CONFIG2 & 000F)+(CONFIG3 & 003F)+ (CONFIG4 & 003C)+(CONFIG5 & 009D)+(CONFIG6 & 0085)+ (CONFIG7 & 0000)+(CONFIG8 & 000F)+(CONFIG9 & 00C0)+ (CONFIG10 & 000F)+(CONFIG11 & 00E0)+(CONFIG12 & 000F)+ (CONFIG13 & 0040)+SUM(IDs) E465 E41A All (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 000F)+ (CONFIG9 & 00C0)+(CONFIG10 & 000F)+(CONFIG11 & 00E0)+ (CONFIG12 & 000F)+(CONFIG13 & 0040)+SUM(IDs) 0459 0463 PIC18F2431 Legend: Item CFGW = SUM[a:b] = SUM_ID = + = & = Description Configuration Word Sum of locations, a to b inclusive Byte-wise sum of lower four bits of all customer ID locations Addition Bit-wise AND 2010 Microchip Technology Inc. DS30500B-page 35 PIC18F2331/2431/4331/4431 TABLE 5-5: Device CHECKSUM COMPUTATION (CONTINUED) Code Protect Checksum Blank Value 0xAA at 0 and Max Address None SUM(0000:01FF)+SUM(0200:0FFF)+SUM(1000:1FFF)+ (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 0003)+ (CONFIG9 & 0003)+(CONFIG10 & 00E0)+(CONFIG11 & 0003)+ (CONFIG12 & 0040)+(CONFIG13 & 0000) E3A4 E2FA Boot Block SUM(0200:0FFF)+SUM(1000:1FFF)+(CONFIG0 & 0000)+ (CONFIG1 & 00CF)+(CONFIG2 & 000F)+(CONFIG3 & 003F)+ (CONFIG4 & 003C)+(CONFIG5 & 009D)+(CONFIG6 & 0085)+ (CONFIG7 & 0000)+(CONFIG8 & 0003)+(CONFIG9 & 0003)+ (CONFIG10 & 00E0)+(CONFIG11 & 0003)+(CONFIG12 & 0040)+ (CONFIG13 & 0000)+SUM(IDs) E5C3 E578 Boot Block/ Block 0/ Block 1 (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 0003)+ (CONFIG9 & 0003)+(CONFIG10 & 00E0)+(CONFIG11 & 0003)+ (CONFIG12 & 0040)+(CONFIG13 & 0000)+SUM(IDs) 03C0 03CA All (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 0003)+ (CONFIG9 & 0003)+(CONFIG10 & 00E0)+(CONFIG11 & 0003)+ (CONFIG12 & 0040)+(CONFIG13 & 0000)+SUM(IDs) 03C0 03CA PIC18F4331 Legend: Item CFGW = SUM[a:b] = SUM_ID = + = & = DS30500B-page 36 Description Configuration Word Sum of locations, a to b inclusive Byte-wise sum of lower four bits of all customer ID locations Addition Bit-wise AND 2010 Microchip Technology Inc. PIC18F2331/2431/4331/4431 TABLE 5-5: Device CHECKSUM COMPUTATION (CONTINUED) Code Protect Blank Value 0xAA at 0 and Max Address None SUM(0000:01FF)+SUM(0200:0FFF)+SUM(1000:1FFF)+ SUM(2000:2FFF)+SUM(3000:3FFF)+(CONFIG0 & 0000)+ (CONFIG1 & 00CF)+(CONFIG2 & 000F)+(CONFIG3 & 003F)+ (CONFIG4 & 003C)+(CONFIG5 & 009D)+(CONFIG6 & 0085)+ (CONFIG7 & 0000)+(CONFIG8 & 000F)+(CONFIG9 & 00C0)+ (CONFIG10 & 000F)+(CONFIG11 & 00E0)+(CONFIG12 & 000F)+ (CONFIG13 & 0040) C488 C3DE Boot Block SUM(0200:0FFF)+SUM(1000:1FFF)+SUM(2000:2FFF)+ SUM(3000:3FFF)+(CONFIG0 & 0000)+(CONFIG1 & 00CF)+ (CONFIG2 & 000F)+(CONFIG3 & 003F)+(CONFIG4 & 003C)+ (CONFIG5 & 009D)+(CONFIG6 & 0085)+(CONFIG7 & 0000)+ (CONFIG8 & 000F)+(CONFIG9 & 00C0)+(CONFIG10 & 000F)+ (CONFIG11 & 00E0)+(CONFIG12 & 000F)+(CONFIG13 & 0040)+ SUM(IDs) C668 C61D Boot Block/ Block 0/ Block 1 SUM(2000:2FFF)+SUM(3000:3FFF)+(CONFIG0 & 0000)+ (CONFIG1 & 00CF)+(CONFIG2 & 000F)+(CONFIG3 & 003F)+ (CONFIG4 & 003C)+(CONFIG5 & 009D)+(CONFIG6 & 0085)+ (CONFIG7 & 0000)+(CONFIG8 & 000F)+(CONFIG9 & 00C0)+ (CONFIG10 & 000F)+(CONFIG11 & 00E0)+(CONFIG12 & 000F)+ (CONFIG13 & 0040)+SUM(IDs) E465 E41A All (CONFIG0 & 0000)+(CONFIG1 & 00CF)+(CONFIG2 & 000F)+ (CONFIG3 & 003F)+(CONFIG4 & 003C)+(CONFIG5 & 009D)+ (CONFIG6 & 0085)+(CONFIG7 & 0000)+(CONFIG8 & 000F)+ (CONFIG9 & 00C0)+(CONFIG10 & 000F)+(CONFIG11 & 00E0)+ (CONFIG12 & 000F)+(CONFIG13 & 0040)+SUM(IDs) 0459 0463 PIC18F4431 Legend: Item CFGW = SUM[a:b] = SUM_ID = + = & = 5.6 Checksum Description Configuration Word Sum of locations, a to b inclusive Byte-wise sum of lower four bits of all customer ID locations Addition Bit-wise AND Embedding Data EEPROM Information In the HEX File To allow portability of code, a PIC18FXX31 programmer is required to read the data EEPROM information from the HEX file. If data EEPROM information is not present, a simple warning message should be issued. Similarly, when saving a HEX file, all data EEPROM information must be included. An option to not include the data EEPROM information may be provided. When embedding data EEPROM information in the HEX file, it should start at address F00000h. Microchip Technology Inc. believes that this feature is important for the benefit of the end customer. 2010 Microchip Technology Inc. DS30500B-page 37 PIC18F2331/2431/4331/4431 6.0 AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/VERIFY TEST MODE Standard Operating Conditions Operating Temperature: 10C to 50C unless otherwise indicated Param No. Sym Characteristic Min Max Units Conditions D110 VIHH High Voltage Programming Voltage on MCLR/VPP 9.00 13.25 V D110A VIHL Low Voltage Programming Voltage on MCLR/VPP 2.00 5.50 V D111 VDD Supply Voltage during programming 2.00 5.50 V Normal programming 4.50 5.50 V Bulk erase operations D112 IPP Programming Current on MCLR/VPP -- 300 A D113 IDDP Supply Current during programming -- 5 mA V D031 VIL Input Low Voltage VSS 0.2 VSS D041 VIH Input High Voltage 0.8 VDD VDD V D080 VOL Output Low Voltage -- 0.6 V IOL = 8.5 mA D090 VOH Output High Voltage VDD - 0.7 -- V IOH = -3.0 mA D012 CIO Capacitive Loading on I/O pin (SDATA) -- 50 pF To meet AC specifications P2 Tsclk Serial Clock (SCLK) period P2A P2B TsclkL TsclkH Serial Clock (SCLK) Low Time Serial Clock (SCLK) High Time 100 -- ns VDD = 5.0V 1 -- s VDD = 2.0V 40 -- ns VDD = 5.0V 400 -- ns VDD = 2.0V 40 -- ns VDD = 5.0V 400 -- ns VDD = 2.0V P3 Tset1 Input Data Setup Time to serial clock 15 -- ns P4 Thld1 Input Data Hold Time from SCLK 15 -- ns P5 Tdly1 Delay between 4-bit command and command operand 20 -- ns P5A Tdly1a Delay between 4-bit command operand and next 4-bit command 20 -- ns P6 Tdly2 Delay between last SCLK of command byte to first SCLK of read of data word 20 -- ns P9 Tdly5 SCLK High Time (minimum programming time) 1 -- ms P10 Tdly6 SCLK Low Time after programming (high voltage discharge time) 5 -- s P11 Tdly7 Delay to allow self-timed data write or bulk erase to occur 10 -- ms P12 Thld2 Input Data Hold Time from MCLR/VPP 2 -- s P13 Tset2 VDD Setup Time to MCLR/VPP 100 -- ns P14 Tvalid Data Out Valid from SCLK 10 -- ns P15 Tset3 PGM Setup Time to MCLR/VPP 2 -- s DS30500B-page 38 2010 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2010, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 2010 Microchip Technology Inc. DS30500B-page 39 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 Taiwan - Hsin Chu Tel: 886-3-6578-300 Fax: 886-3-6578-370 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 01/05/10 DS30500B-page 40 2010 Microchip Technology Inc.