TEFT4300 Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 (o 3 mm) plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with l p 900nm). The plastic lens provides a wide viewing angle of 30. y Features D D D D D D D High radiant sensitivity Fast response times T1 (o 3 mm) plastic package with IR filter 94 8637 Additional polarity sign Wide viewing angle = 30 Suitable for near infrared radiation Matches with TSUS 4300 GaAs infrared emitter Applications Optical switches Counters and sorters Interrupters Tape and card readers Encoders Position sensors Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient TELEFUNKEN Semiconductors Rev. A2, 21-Aug-96 Test Conditions x tp/T = 0.5, tp 10 ms Tamb 55 C x t x 3 s, 2 mm from case Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 70 5 50 100 100 100 -55...+100 260 450 Unit V V mA mA mW C C C K/W 1 (5) TEFT4300 Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Test Conditions IC = 1 mA Symbol V(BR)CEO VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee=1mW/cm2, l=950nm, VCE=5V ICEO CCEO Ica Min 70 0.8 Max Unit V 1 3 3.2 200 nA pF mA 30 925 875...1000 lp l0.5 Ee=1mW/cm2, l=950nm, Typ VCEsat IC=0.1mA VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W 0.3 ton toff fc deg nm nm V ms ms 2.0 2.3 180 kHz Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 I CEO - Collector Dark Current ( nA ) P tot - Total Power Dissipation ( mW ) 125 100 75 RthJA 50 25 0 20 40 60 80 101 100 Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 2 (5) VCE=20V 102 100 0 94 8308 103 20 94 8304 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Collector Dark Current vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A2, 21-Aug-96 C CEO - Collector Emitter Capacitance ( pF ) TEFT4300 I ca rel - Relative Collector Current 2.0 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 VCE=5V l=950nm 1 100 10 8 VCE=5V RL=100W l=950nm 6 4 toff 2 ton =1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 l ) rel 0.1 mW/cm2 0.1 1 10 6 8 10 12 14 1.0 0.8 0.6 0.4 0.2 0 800 100 VCE - Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage TELEFUNKEN Semiconductors Rev. A2, 21-Aug-96 4 IC - Collector Current ( mA ) S( 0.05 mW/cm2 2 Figure 7. Turn On/Turn Off Time vs. Collector Current - Relative Spectral Sensitivity l=950nm Ee 0 94 8293 10 Ica - Collector Light Current ( mA ) 1 VCE - Collector Emitter Voltage ( V ) 10 Figure 4. Collector Light Current vs. Irradiance 94 8305 0 0 0.1 Ee - Irradiance ( mW / cm2 ) 0.1 2 Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage t on / t off - Turn on / Turn off Time ( m s ) Ica - Collector Light Current ( mA ) 1 94 8302 4 94 8294 10 0.01 0.01 6 0.1 Figure 3. Relative Collector Current vs. Ambient Temperature 0.1 f=1MHz 8 100 Tamb - Ambient Temperature ( C ) 94 8239 10 94 8306 900 1000 1100 l - Wavelength ( nm ) Figure 8. Relative Spectral Sensitivity vs. Wavelength 3 (5) TEFT4300 S rel - Relative Sensitivity 0 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8303 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement Dimensions in mm 96 12172 4 (5) TELEFUNKEN Semiconductors Rev. A2, 21-Aug-96 TEFT4300 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 21-Aug-96 5 (5)