TEFT4300
TELEFUNKEN Semiconductors
Rev . A2, 21-Aug-96 1 (5)
Silicon NPN Phototransistor
Description
TEFT4300 is a high speed and high sensitive silicon
NPN epitaxial planar phototransistor in a standard T–1 (ø
3 mm) plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with
l
p
y
900nm).
The plastic lens provides a wide viewing angle of ± 30
°
.
Features
D
High radiant sensitivity
D
Fast response times
D
T1 (ø 3 mm) plastic package with IR filter
D
Additional polarity sign
D
Wide viewing angle ϕ = ± 30
°
D
Suitable for near infrared radiation
D
Matches with TSUS 4300 GaAs infrared emitter
94 8637
Applications
Optical switches
Counters and sorters
Interrupters
Tape and card readers
Encoders
Position sensors
Absolute Maximum Ratings
Tamb = 25
_
C
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage VCEO 70 V
Emitter Collector Voltage VECO 5 V
Collector Current IC50 mA
Peak Collector Current tp/T = 0.5, tp
x
10 ms ICM 100 mA
Total Power Dissipation Tamb
x
55
°
C Ptot 100 mW
Junction Temperature Tj100
°
C
Storage Temperature Range Tstg –55...+100
°
C
Soldering Temperature t
x
3 s, 2 mm from case Tsd 260
°
C
Thermal Resistance Junction/Ambient RthJA 450 K/W
TEFT4300
TELEFUNKEN Semiconductors
Rev . A2, 21-Aug-96
2 (5)
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage IC = 1 mA V(BR)CEO 70 V
Collector Dark Current VCE = 20 V, E = 0 ICEO 1 200 nA
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 CCEO 3 pF
Collector Light Current Ee=1mW/cm2,
l
=950nm,
VCE=5V Ica 0.8 3.2 mA
Angle of Half Sensitivity ϕ±30 deg
Wavelength of Peak Sensitivity
l
p925 nm
Range of Spectral Bandwidth
l
0.5 875...1000 nm
Collector Emitter Saturation
Voltage Ee=1mW/cm2,
l
=950nm,
IC=0.1mA VCEsat 0.3 V
Turn–On T ime VS=5V, IC=5mA, RL=100
W
ton 2.0
m
s
Turn–Off Time VS=5V, IC=5mA, RL=100
W
toff 2.3
m
s
Cut–Off Frequency VS=5V, IC=5mA, RL=100
W
fc180 kHz
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
020406080
0
25
50
75
100
125
P – Total Power Dissipation ( mW )
tot
Tamb – Ambient Temperature ( °C )
100
94 8308
RthJA
Figure 1. Total Power Dissipation vs. Ambient Temperature
94 8304
20
I – Collector Dark Current ( nA )
CEO
100
40 60 80
Tamb – Ambient Temperature ( °C )
100
101
102
103
104
VCE=20V
Figure 2. Collector Dark Current vs. Ambient Temperature
TEFT4300
TELEFUNKEN Semiconductors
Rev . A2, 21-Aug-96 3 (5)
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I – Relative Collector Current
ca rel
20 40 60 80
Tamb – Ambient Temperature ( °C )
100
1.6
1.8
VCE=5V
Ee=1mW/cm2
l
=950nm
Figure 3. Relative Collector Current vs. Ambient Temperature
0.01 0.1 1
0.01
0.1
1
10
I – Collector Light Current ( mA )
ca
Ee – Irradiance ( mW/cm2 )
10
94 8302
VCE=5V
l
=950nm
Figure 4. Collector Light Current vs. Irradiance
0.1 1 10
0.1
1
10
I – Collector Light Current ( mA )
ca
VCE – Collector Emitter Voltage ( V )
100
94 8305
Ee=1mW/cm2
0.5mW/cm2
0.2mW/cm2
0.1mW/cm2
0.05mW/cm2
l
=950nm
Figure 5. Collector Light Current vs. Collector Emitter Voltage
0.1 1 10
0
2
4
6
8
10
VCE – Collector Emitter Voltage ( V )
100
94 8294
C – Collector Emitter Capacitance ( pF )
CEO
f=1MHz
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
024 6 12
0
2
8
14
94 8293
t / t – Turn on / Turn off Time ( s )
off
IC – Collector Current ( mA )
m
on
6
4
108
VCE=5V
RL=100
W
l
=950nm
toff
ton
Figure 7. Turn On/Turn Off Time vs. Collector Current
800 900 1000 1100
94 8306
0
0.2
0.4
0.6
0.8
1.0
S ( ) – Relative Spectral Sensitivity
rel
l
– Wavelength ( nm )
l
Figure 8. Relative Spectral Sensitivity vs. Wavelength
TEFT4300
TELEFUNKEN Semiconductors
Rev . A2, 21-Aug-96
4 (5)
0.4 0.2 0 0.2 0.4
S – Relative Sensitivity
rel
0.6
94 8303
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
96 12172
TEFT4300
TELEFUNKEN Semiconductors
Rev . A2, 21-Aug-96 5 (5)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
