STLICONIX INC LAE D @@ 46254735 0015097 1 SF Books , 2N6962 - - N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 PRODUCT SUMMARY ear | UH" | 100 0.060 30 T-39-13 TO-210AC (TO-61) tsolated Case This device contains berylilum oxide TOP VIEW ws 7 i1 NX 26 K3I@ ZH ~~ 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Vos 100 Vv Gate-Source Voltage Ves +30 Continuous Drain Current To = 25C lb 30 To = 100C 24 A Pulsed Drain Current low 120 Power Dissipation To = 25C Pp 150 WwW To = 100C 60 Operating Junction & Storage Temperature Range Ty Tstg -55 to 150 C Lead Temperature ('/,, from case for 10 sec.) Th 300 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM | UNITS Junction-to-Case Ric 0.83 Junction-to-Ambient Ria 40 K/W Case-to-Sink Rincs 0.4 Pulse width limited by maximum junction temperature (refer to transient thermal impedance data, Figure 11). 4-517SILICONIX INC L&E D Mi 6254735 0015056 3 2N6962 $F Siliconix incorporated ELECTRICAL CHARACTERISTICS (Ty = 25C Unless Otherwise Noted) T- 39. 1 3 : LIMITS PARAMETER SYMBOL TEST CONDITIONS TVP | MIN | MAX | UNIT STATIC Drain-Source Breakdown Voltage Vienjoss Vas = 0V, Ip = 250 pA 100 v Gate Threshold Voltage Vestn) Vos = Vas: Ip = 250 [A 2.0 4.0 Gate-Body Leakage lass Vos = OV, Veg = 20V +100 | nA Zero Gate Voltage Drain Current loss Vos = 0.8 X Viarjogs. Vas = OV 250 | pa Vos = 0.8 X Viaginss: Vas = OV, Ty = 125C 260 On-State Drain Current! Ixom) Vos = 1.8V, Vas = 10V 30 A Drain-Source On-State Resistance! Tosion) Vas = 10V Ip = 24A 0.45 0.060 | o Veg = 10V, Ip = 24A, Ty = 125C 0.08 0.004 Forward Transconductance! is Vos = 18V, Ip = 24A 12 9.0 27 s DYNAMIC Input Capacitance Cis ; . 2800 Output Capacitance Coss Vas = OV, Vos = 25V,f = 1 MHz 1100 pF Reverse Transfer Capacitance Crs 400 Total Gate Charge? Q, 64 50 125 Gate-Source Charge? Qgs Vos = 0.8 X Vienjoss, Vas = 10V, Ip = 30A 19 8 22 nc Gate-Drain Charge? Qga 35 25 65 Tum-On Delay Time? tayon) 15 35 Rise Time? t Voo = 254 R,=10 30 100 ns Tum-Off Delay Time? tacom Ip 22 24.4, Voen = 10V, Rg = 4.70 50 126 Fail Time? t 20 100 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (To = 25C) Continuous Current Ig 30 A Pulsed Current Igaa 120 Forward Voltage! Vp le = Ig. Veg = OV 060 | 19 Vv Reverse Recovery Time tr lp = Ig, dig/dt = 100 A/us 180 400 | ns Reverse Recovery Charga On 05 pc Pulse test Pulse Width < 300 asec, Duty Cycla << 2%. 2independent of operating temperature. SPulse width limited by maximum junction temperature (refer to transient thermal impedance data, Figure 11). 4-518SILICONIX INC . 16E-D Wm 8254735 0015099 5 5 Bion 2N6962 TYPICAL GHARACTERISTICS (25C Unless Otherwise Specified) Te 39- 13 Figure 1. Output Characteristics Figure 2. Transfer Characteristics. 50 Vag= 10V y = 2! a _ Vv 40 To= ; 55C = = 25C / & 5 i = 30 x a 3 a hy 125C 2 z z < 20 Qa. a l U 2 2 10 and yY 0 Q 2 4 6 8 10 0 2 4 6 8 10 Vag - DRAIN-TO-SOURGCE VOLTAGE (V) Ves - GATE-TO-SOURCE VOLTAGE ) Figure 3, Transconductance Figure 4, On-Resistance 25 0.5 Z _ we 20 Te = -55C4 2 0.4 <2 | een Oo < z 5 4s A | 8c 5 0.8 a on 8 JLT 125C i Vas= 10V Q 10 so S 0.2 f 7 - t 5 F A 0.1 & 2 20 V 0 0 | 0 10 20 30 40 50 0 25 50 75 100 125 lp - DRAIN CURRENT (A) Ip - DRAIN CURRENT (A) Figure 5. Capacitance Figure 6. Gate Charge 5000 18.0 = GB 12.8 @ 12. = 4000 5 w a 10.0 2 aa0o Q z & 5 3 7.5 cco Q - 6 ts 5.0 : 8 Oo 1000 1 2.8 a o 0 > Oo 0 10 20 30 40 60 0 20 40 60 80 100 Vos - DRAIN-TO-SOURCE VOLTAGE (V) Qg - TOTAL GATE CHARGE (nC) 4-519Ton rhe gee 7 remo ; roa mre r E norris SILICONIX INC 2N6962 | TYPICAL CHARACTERISTICS (Cont'd) Figure 7, On-Resistance ve. Junction Temperature L8E D MM 4254735 0015100 6 mm 1-39-13 Figure 8. Source-Draln Diode Forward Voltage 2.00 400 GS 1.75 > Ty = 25% 8 = t00 2 a 1-50 a be ON a Be 1.25 S 2m 2 09 0 Z 1.00 5! i ra a a I RB 0.75 | 2 = ra 0.50 1 -0 = =-10 30 70 110 150 0 0.6 1.0 1.5 2.0 2.5 T, - JUNCTION TEMPERATURE (C) Vsp ~ SOURCE-TO-DRAIN VOLTAGE (Vv) THERMAL RATINGS Figure 9, Maximum Drain Current vs. Casa Temperature Figure 10. Safe Operating Area 50 vs. Case Temperature 400 40 = 100 2 a = 30 c 5 s 5 iy 5 a PN o 20 <= * 10 3 x g 10 \ 2 10 U 20 a0 3 TUS T2S 150 Tg - CASE TEMPERATURE (C) Dc 2 10 100 600 Vos - DRAIN-TO-SOURCE VOLTAGE ) Operation In this area may be limited by Toston) 1 Figure 11. Normalized Effeotive Transient Thermal Impadance, Junction-to-Case Duty cycle= 0.5 0.2 0.1 0.1 0. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 0.01 io5 19+ 10 to? 19! 1 SQUARE WAVE PULSE DURATION (sec) 4-520