qo 48 De rseyaye ooOoSO084 2 . 1RF150/151/152/153 7964142 SAMSUNG SEMICONDUCTOR ING Beene Stacie fae Fite mn abies an So N-CHANNEL FEATURES Low Rpsjon) Fast switching times - Low input capacitance Extended safe operating area TO-3 package (High current) PRODUCT SUMMARY Improved inductive ruggedness Rugged polysilicon gate cell structure Improved high temperature reliability = 98D 05084 POWER MOSFETS TO-3 Part Number Vos Ros(on) Ip D IRF160 100v | 0.0559 | 40a IRF151 60V 0.0550 40A IRF152 * 100V 0.08 2 33A Gg Ss IRF153 60V 0.089 33A MAXIMUM RATINGS Characteristic Symbol tRF150 IRF151 IRF152 IRF153 Unit Drain-Source Voltage (1) Voss 100 60 100 60 "Vde Drain-Gate Voltage (Ras=1.0MM) (1) VocR 100 60 100 60 Vde Gate-Source Voltage Vas +20 Vde Continuous Drain Current Te=25C Ip 40 40 33 33 Adc Continuous Drain Current To= 100C lo 25 25 20 20 Adc Drain CurrentPulsed (3) lom 160 160 132 132 Adc Gate Current-Pulsed loam 1.56 Adc Tota! Power Dissipation @ Tc=25C Pp 150 Watts Derate above 25C 1.2 wiec Operating and Storage Junction Temperature Range Ty, Tstg 55 to 150 c Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds Th 300 C Notes: (1) Ti=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature CEE sanisunc SEMICONDUCTOR 837964142, SAMSUNG SEMICO ONDL JCTOR ING. 980_05085 oT =39- u3 46 ve 7abuiu2 ooosoas yf ee NEL IRF150/151/152/153 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Te=25C unless otherwise specified) Characteristic Symbol] Type |Min| Typ | Max [Units Test Conditions . - Whiee 100) | | V lVes=ov Drain-Source Breakdown BVoss Voltage | (IRFA64 60 V_ |lp=250, . IRF153 -] 7 p= 250yA Gate Threshold Voltage - Vesin | ALL |2.0/ | 4.0] V [Vps=Ves, Ilp=250uA Gate-Source Leakage Forward] less ALL | -| 100 | nA |Vas=20V } Gate-Source Leakage Reverse] less ALL | | j-100] nA |Ves=-20V Zero Gate Voltage . loss ALL _ - 250] pA |Vos=Max. Rating, Ves=OV _ Drain Current . | | 1000} pA |Vos=Max. RatingX0.8, Vas=OV, To=125C IRF150 To . On-State Drain-Source wris1|4] | | A lnjon) Vos>lpjon)X Rosion) max. Vag= 10V Current (2) IRF152 : IRFi53|2| | | A IRF150 | 0.04 |0.055| 9 Static Drain-Source On-State | p IRF151 Ves=10V, Ip=2 DS(on) es= > Ip=20A Resistance (2) IRF162 . IRF163| | 9-06 | 0.08| 9 Forward Transconductance (2)| gts ALL /9:0/12.3 | B_|Vps>lp(on)X Rps(on) max.. lp=ZOA Input Capacitance . Ciss ALL | |2900| 3000) pF Output Capacitance Coss ALL | ~ | 1050/1500] pF |Ves=OV, Vps=25V, f=1.0MHz Reverse Transfer Capacitance] Cres ALL | | 450 | 500 | pF , Turn-On Delay Time taton) ALL j-j] = 35 | ns Rise Time tt | ALL | | | 100 | ns |00=0.5BVpss, 1o=20A, Zo=4.79 (MOSFET switching times are essentially Tum-Off Delay Time taro | ALL | | | 126 | MS lindependent of operating temperature. ) Fall Time ty ALL | | {| 100] ns . Total Gate Charge (Gate-Source Plus Gate- -Drain) Qg } ALL | | 72 | 120 | nc Vas=10V, Ip=50A, Vps=0.8 Max. Rating Gate-Source Charge Qos ALL | 18 Inc (Gate charge is essentially Independent of operating temperature. ) Gate-Drain (Miller) Charge | Qgq ALL || 54) | nC THERMAL RESISTANCE Junction-to-Case - Rinc | ALL | | | 0.83] KAW Case-to-Sink Rancs | ALL | |} 0.1 | K/W |Mounting surface flat, smooth, and greased Junction-to-Ambient : Rina ALL | -] 30 | K/W |Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300yus, Duty Cycles<2% _ (3) Repetitive rating: Pulse width limited by max. junction temperature cee SAMSUNG SEMICONDUCTOR . 84|. 1.7964142 SAMSUNG SEMICONDUCTOR | INC 98D 05086 DO T3443 48 eB raeuaee oo0508e PERE NL UAL IRF150/151/152/153 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic - [Symbol] Type |Min| Typ | Max [Units Test Conditions | IRFISO] | 4o | A | Continuous Source Current ls IRF151 j Body Diode (Body Diode) . neieg| | | 33 | A [Modified MOSFET symbol D i showing the integral @ { 4 IRF150) | 160 | A |feverse P-N junction rectifier & $ i Pulse Source Current Ise IRF151 . j (Body Diode) (3) : IRF152; | _ | as0l a t . IRF153 } . heies| ~ | | 2:8 | V [To=25C, 1s=40A, Ves=0V } . Diode Forward Voltage (2) Vsp RFA . 52 =9R = = iRFi53| - 2.31 V [Tc=25C, ls=33A, Ves=0V . . 1 Reverse Recovery Time tr ALL ||600|] ns [Ty=150C, Ip=40A, die/dt=100A/pus { Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycile<2% ' (3) Repetitive rating: Pulse width limited by max. junction temperature 60 Ves= 10 2 g w ui = a = = & b @ 3 q cz s e 2 5 3 z Zz z < 5 & s 3 10 20 30 40 50 60 3 4. \ Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typlcal Transfer Characteristics 103: V g @ ec uo w a = 3 = E & & z & > 6 Oo fy z g ; = 5 a , : 6 $ 1 - F 2 10 0.4 9 10002 5 10 20 100 ! Vps, DRAIN-TO-SOURCE VOLTAGE (vouts) Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) | Typical Saturation Characteristics Maximum Safe Operating Area : . | } SAMSUNG SEMICONDUCTOR 88 q_ 2964142 SAMSUNG SEMICONDUCTOR INC "980 080870 T-39-13 7ILYL42 OOOSOS? B ALOK ANNEL IRF150/151/152/153 POWER MOSFETS = o a to o a = ct 1. Duty Factor. ont Per Unt Base=Ryo=0 83 Deg. CAV TaToPouZeuc (1) THERMAL IMPEDANCE (PER UNIT) ZnsctVRindc NORMALIZED EFFECTIVE TRANSIENT 2 8 6 10% 2 5 2 10% 2 5 11. SQUARE WAVE PULSE DURATION (SECONDS) ; Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration 20 ~ cy gts, TRANSCONDUCTANCE (SIEMENS) a (lbp, REVERSE DRAIN CURRENT (AMPERES) 9 10 20 0 4 2 3 4 5 8 \ lo, DRAIN CURRENT (AMPERES) Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transconductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage 2.5 G - 3 S 115 = 20 > & z a 3 # - g oo a 1.05 om 15 BE oS as S< wa 2: B2 28 ego C2 10 a z < 4 2 & <q z & 9 & 06 g 5S B 0.75 0 -40 0 40 80 120 160 40 0 40 80 120 160 Ta JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature e8 samsunc SEMICONDUCTOR 86i_2964142 SAMSUNG SEMICONDUCTOR INI 98D 05088 pT-34-13 Jraesau2 ooosose o ff - ee N-CHANNEL | IRF150/151/152/153 POWER MOSFETS 25 a 3 2 3 =< & s ) - 8 $ 16 w < 5 q < o a 10 3 z s f a a 10 30 40 60 0 28 56 412 140 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Voitage o a = = 2 W a z g oc wo B zw oO. < 2 5 z = 3 oO. z z 2 z 2 < = a $ o ec 0.02 9 oO 40 80 120 160 200 25 50 75 100 125 150 \ . Ip, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (*C} Typical On-Resistance Vs. Orain Current Maximum Drain Current Vs. Case Temperature 8 Pp, POWER DISSIPATION (WATTS) g 20 o 40 60 89 100 120 140 Ta, AMBIENT TEMPERATURE ("C) Power Vs. Temperature Derating Curve eE samsunc SEMICONDUCTOR 87