NXP Semiconductors Data Sheet: Technical Data MKW2xDxxx Rev. 2, 05/2016 MKW2xD Data Sheet Supports MKW24D512V, MKW22D512V, MKW21D512V, and MKW21D256V Products MKW2xDxxxVHA5 The MKW2xD is a low power, compact integrated device consisting of: * A high-performance 2.4 GHz IEEE 802.15.4 compliant radio transceiver * A powerful ARM Cortex-M4 MCU system with connectivity * Precision mixed signal analog peripherals The MKW2xD family of devices are used to easily enable connectivity based on the IEEE 802.15.4 Standard. Core Processor and Memories * 50 MHz Cortex-M4 CPU with DSP capabilities * Up to 512 KB of flash memory * Up to 64 KB of SRAM Typical Applications * Smart Energy 1.x * ZigBee Home Automation * ZigBee Healthcare * ZigBee RF4CE * ZigBee Light Link * Thread * Home Area Networks consisting of * Meters * Gateways * In-home displays * Connected appliances * Networked Building Control and Home Automations with * Lighting Control * HVAC * Security 64 LQFP 8.0x8.0x0.91 mm P 0.5 mm Peripherals * USB * Cryptographic Acceleration * 16-bit ADC * 12-bit DAC * Flexible timers Radio transceiver performance * Up to -102 dBm receiver sensitivity * +8 dBm maximum transmit output power * Up to 58 dBm channel rejection * Current consumption is minimized with peak transmit current of 17 mA at 0 dBm output power, and peak receive current of 15 mA in Low Power Preamble Search mode. Package and Operating Characteristics * Packaged in an 8 x 8 mm LGA with 56 contacts * Voltage range: 1.8 V to 3.6 V * Ambient temperature range: -40C to 105C NXP reserves the right to change the production detail specifications as may be required to permit improvements in the design of its products. (c) 2013-2016 NXP B.V. Ordering Information Operatin g Temp Range (TA) Device Memory Options Package Description MKW21D256VHA5(R) -40 to 105C 8x8 LGA (R: tape and reel) 32 KB SRAM, 256 KB flash Additional FlexMemory with up to 64 KB FlexNVM and up to 4 KB FlexRAM. No USB. MKW21D512VHA5(R) -40 to 105C 8x8 LGA (R: tape and reel) 64 KB SRAM, 512 KB flash Supports higher memory option and additional GPIO. No USB. No FlexNVM or FlexRAM. MKW22D512VHA5(R) -40 to 105C 8x8 LGA (R: tape and reel) 64 KB SRAM, 512 KB flash Supports full speed USB 2.0. No FlexNVM or FlexRAM. MKW24D512VHA5(R) -40 to 105C 8x8 LGA (R: tape and reel) 64 KB SRAM, 512 KB flash Supports Smart Energy 2.0 and full-speed USB 2.0. No FlexNVM or FlexRAM. Related Resources Type Description Resource Selector Guide The Kinetis MCUs Product Selector is a web-based tool that features interactive application wizards and a dynamic product selector. Product Selector Fact Sheet The Fact Sheet gives overview of the product key features and its uses. KW2X Fact Sheet Reference Manual The Reference Manual contains a comprehensive description of the structure and function (operation) of a device. MKW2xDRM1 Data Sheet The Data Sheet includes electrical characteristics and signal connections. This document. Package drawing Package dimensions are provided in package drawings. 98ASA00393D1 1. To find the associated resource, go to http://www.nxp.com and perform a search using this term. 2 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Table of Contents 1 Features.............................................................................. 4 1.1 Block diagram............................................................ 4 1.2 Radio features............................................................4 1.3 Microcontroller features............................................. 5 2 Transceiver description....................................................... 8 2.1 Key specifications...................................................... 8 2.2 RF interface and usage..............................................9 2.2.1 Clock output feature.......................................9 2.3 Transceiver functions.................................................10 2.3.1 Receive.......................................................... 10 2.3.2 Transmit......................................................... 10 2.3.3 Clear channel assessment (CCA), energy 3 4 5 6 detection (ED), and link quality indicator (LQI)...............................................................11 2.3.4 Packet processor........................................... 12 2.3.5 Packet buffering............................................. 13 2.4 Dual PAN ID...............................................................14 System and power management.........................................15 3.1 Modes of operation.................................................... 15 3.2 Power management...................................................15 Radio Peripherals................................................................16 4.1 Clock output (CLK_OUT)........................................... 16 4.2 General-purpose input output (GPIO)........................16 4.3 Serial peripheral interface (SPI).................................18 4.3.1 Features.........................................................18 4.4 Antenna diversity....................................................... 19 4.5 RF Output Power Distribution.................................... 19 MKW2xD operating modes................................................. 20 5.1 Transceiver Transmit Current Distribution................. 21 MKW2xD electrical characteristics...................................... 22 6.1 Radio recommended operating conditions................ 22 6.2 Ratings.......................................................................23 6.2.1 Thermal handling ratings............................... 23 6.2.2 Moisture handling ratings...............................23 6.2.3 ESD handling ratings..................................... 23 6.2.4 Voltage and current operating ratings............24 7 MCU Electrical characteristics.............................................24 7.1 Maximum ratings........................................................24 7.2 AC electrical characteristics.......................................25 7.3 Nonswitching electrical specifications........................26 MKW2xD Data Sheet, Rev. 2, 05/2016 7.3.1 7.3.2 7.3.3 7.3.4 7.3.5 7.3.6 Voltage and current operating requirements..26 LVD and POR operating requirements.......... 27 Voltage and current operating behaviors....... 28 Power mode transition operating behaviors...28 Power consumption operating behaviors.......29 EMC radiated emissions operating behaviors....................................................... 33 7.3.7 Designing with radiated emissions in mind.... 34 7.3.8 Capacitance attributes................................... 34 7.4 Switching specifications............................................. 34 7.4.1 Device clock specifications............................ 34 7.4.2 General switching specifications....................35 7.5 Thermal specifications............................................... 36 7.5.1 Thermal operating requirements....................36 7.5.2 Thermal attributes.......................................... 36 7.6 Peripheral operating requirements and behaviors..... 37 7.6.1 Core modules.................................................37 7.6.2 System modules............................................ 40 7.6.3 Clock modules............................................... 40 7.6.4 Memories and memory interfaces..................45 7.6.5 Security and integrity modules.......................49 7.6.6 Analog............................................................50 7.6.7 Timers............................................................ 57 7.6.8 Communication interfaces............................. 57 8 Transceiver Electrical Characteristics................................. 66 8.1 DC electrical characteristics.......................................66 8.2 AC electrical characteristics.......................................67 8.3 SPI timing: R_SSEL_B to R_SCLK........................... 68 8.4 SPI timing: R_SCLK to R_MOSI and R_MISO.......... 69 9 Crystal oscillator reference frequency................................. 69 9.1 Crystal oscillator design considerations.....................69 9.2 Crystal requirements..................................................69 10 Pin diagrams and pin assignments..................................... 71 10.1 MKW21D256/MKW21D512 Pin Assignment............. 71 10.2 MKW22/24D512V Pin Assignment............................ 72 10.3 Pin assignments.........................................................72 11 Dimensions..........................................................................76 11.1 Obtaining package dimensions..................................76 12 Revision History.................................................................. 77 3 NXP Semiconductors Features 1 Features This section provides a simplified block diagram and highlights the device features. 1.1 Block diagram Core ARM(R) CortexTM -M4 50 MHz Debug Interfaces DSP Interrupt Controller Security and Integrity Cyclic Redundancy Check (CRC) 16bit ADC Tamper Detect HighSpeed Comparator with 6bit DAC Cryptography Authentication Unit Internal and External Watchdogs Program Flash (up to 512 KB) DMA FlexNVM 64 KB 4 KB FlexRAM MKW21D256 only Timers SRAM (up to 64 KB) IEEE 802.15.4 2006 2.4 GHz Antenna Diversity 32 MHz OSC Communication Interfaces FlexTimer USB OntheGo (HS) Programmable Delay Block I2C Periodic Interrupt Timers UART (ISO 7816) USB Device Charger Detect (DCD) SPI USB Voltage Regulator LowPower Timer Independent RealTime Clock (RTC) Random Number Generator Standard Feature Memories LowLeakage Wakeup Unit Analog RF Transceiver System Dual PAN ID SPI Clocks PhaseLocked Loop Frequency Locked Loop Low/High Frequency Oscillators Internal Reference Clocks Optional Figure 1. MKW2xD simplified block diagram 1.2 Radio features * Fully compliant 802.15.4 Standard transceiver supports 250 kbps data rate with OQPSK modulation in 5.0 MHz channels with direct sequence spread-spectrum (DSSS) encode and decode 4 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Features * Operates on one of 16 selectable channels in the 2.4 GHz frequency ISM band * Programmable output power * Supports 2.36 to 2.4 GHz Medical Band (MBAN) frequencies with same modulation as IEEE 802.15.4 * Hardware acceleration for IEEE(R) 802.15.4 2006 packet processing * Random number generator * Support for dual PAN mode * 32 MHz crystal reference oscillator with on board trim capability to supplement external load capacitors * Programmable frequency clock output (CLK_OUT) * Control port for Antenna Diversity mode * Clocks * 32 MHz crystal oscillator * Internal 1 kHz low power oscillator * DC to 32 MHz external square wave input clock * Small RF footprint * Differential input/output port used with external balun * Integrated transmit/receive switch * Supports single ended and antenna diversity options * Low external components count * Supports external PA and LNA 1.3 Microcontroller features * Core: * ARM Cortex-M4 Core at 50 MHz (1.25 MIPS/MHz) * Supports DSP instructions MKW2xD Data Sheet, Rev. 2, 05/2016 5 NXP Semiconductors Features * Nested vectored interrupt controller (NVIC) * Asynchronous wake-up interrupt controller (AWIC) * Debug and trace capability * 2-pin serial wire debug (SWD) * IEEE 1149.1 Joint Test Action Group (JTAG) * IEEE 1149.7 compact JTAG (cJTAG) * Trace port interface unit (TPIU) * Flash patch and breakpoint (FPB) * Data watchpoint and trace (DWT) * Instrumentation trace macrocell (ITM) * Enhanced trace macrocell (ETM) * System and power management: * Software and hardware watchdog with external monitor pin * DMA controller with 16 channels * Low-leakage wake-up unit (LLWU) * Power management controller with 10 different power modes * Non-maskable interrupt (NMI) * 128-bit unique identification (ID) number per chip * Memories and memory interfaces: * Up to 512 KB Program Flash * Up to 64 KB of SRAM * In MKW21D256, FlexMemory with up to 64 KB FlexNVM and up to 4 KB FlexRAM can be partitioned. * EEPROM has endurance of 10 million cycles over full voltage and temperature range and read-while-write capability * Flash security and protection features * Serial flash programming interface (EzPort) 6 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Features * Clocks * Multi-purpose clock generator * PLL and FLL operation * Internal reference clocks (32 kHz or 2 MHz) * Three separate crystal oscillators * 3 MHz to 32 MHz crystal oscillator for MCU * 32 kHz to 40 kHz crystal oscillator for MCU or RTC * 32 MHz crystal oscillator for Radio * Internal 1 kHz low power oscillator * DC to 50 MHz external square wave input clock * Security and integrity * Hardware CRC module to support fast cyclic redundancy checks * Tamper detect and secure storage * Hardware random-number generator * Hardware encryption supporting DES, 3DES, AES, MD5, SHA-1, and SHA-256 algorithms * 128-bit unique identification (ID) number per chip * Analog * 16-bit SAR ADC * High-speed Analog comparator (CMP) with 6-bit DAC * Timers * Up to 12 channels; 7 channels support external connections; 5 channels are internal only * Carrier modulator timer (CMT) * Programmable delay block (PDB) * 1x4ch programmable interrupt timer (PIT) MKW2xD Data Sheet, Rev. 2, 05/2016 7 NXP Semiconductors Transceiver description * Low-power timer (LPT) * FlexTimers that support general-purpose PWM for motor control functions * Communications * One SPI * Two I2C with SMBUS support * Three UARTs (w/ ISO7816, IrDA, and hardware flow control) * One USB On-The-Go Full Speed * Human-machine interface * GPIO with pin interrupt support, DMA request capability, digital glitch filter, and other pin control options * Operating characteristics * Voltage range 1.8 V - 3.6 V * Flash memory programming down to 1.8 V * Temperature range (TA) -40 to 105C 2 Transceiver description 2.1 Key specifications MKW2xD meets or exceeds all IEEE 802.15.4 performance specifications applicable to 2.4 GHz ISM and MBAN (Medical Band Area Network) bands. Key specifications for MKW2xD are: * ISM band: * RF operating frequency: 2405 MHz to 2480 MHz (center frequency range) * 5 MHz channel spacing * MBAN band: * RF operating frequency: 2360 MHz to 2400 MHz (center frequency range) * MBAN channel page 9 is (2360 MHz-2390 MHz band) 8 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Transceiver description * Fc = 2363.0 + 1.0 * k in MHz for k = 0, 1, 2, ...26 * MBAN channel page 10 is (2390 MHz-2400 MHz band) * Fc = 2390.0 + 1.0 * k in MHz for k = 0, 1, 2, ...8 * IEEE 802.15.4 Standard 2.4 GHz modulation scheme * Chip rate: 2000 kbps * Data rate: 250 kbps * Symbol rate: 62.5 kbps * Modulation: OQPSK * Receiver sensitivity: -102 dBm, typical (@1% PER for 20 byte payload packet) * Differential bidirectional RF input/output port with integrated transmit/receive switch * Programmable output power from -35 dBm to +8 dBm. 2.2 RF interface and usage The MKW2xD RF output ports are bidirectional (diplexed between receive/transmit modes) and differential enabling interfaces with numerous off-chip devices such as a balun. When using a balun, this device provides an interface to directly connect between a single-ended antenna and the MKW2xD RF ports. In addition, MKW2xD provides four output driver ports that can have both drive strength and slew rate configured to control external peripheral devices. These signals designated as ANT_A, ANT_B, RX_SWITCH, and TX_SWITCH when enabled are switched via an internal hardware state machine. These ports provide control features for peripheral devices such as: * Antenna diversity modules * External PAs * External LNAs * T/R switches MKW2xD Data Sheet, Rev. 2, 05/2016 9 NXP Semiconductors Transceiver functions 2.2.1 Clock output feature The CLK_OUT digital output can be enabled to drive the system clock to the MCU. This provides a highly accurate clock source based on the transceiver reference oscillator. The clock is programmable over a wide range of frequencies divided down from the reference 32 MHz (see Table 2). The CLK_OUT pin will be enabled upon POR. The frequency CLK_OUT default to 4 MHz (32 MHz/8). 2.3 Transceiver functions 2.3.1 Receive The receiver has the functionality to operate in either normal run state or low power run state that can be considered as a partial power down mode. Low power run state can save a considerable amount of current by duty-cycling some sections of the receiver lineup during preamble search and is referred to as Low Power Preamble Search mode (LPPS). The radio receiver path is based upon a near zero IF (NZIF) architecture incorporating front end amplification, one mixed signal down conversion to IF that is programmably filtered, demodulated and digitally processed. The RF front end (FE) input port is differential that shares the same off chip matching network with the transmit path. 2.3.2 Transmit MKW2xD transmits OQPSK modulation having power and channel selection adjustment per user application. After the channel of operation is determined, coarse and fine tuning is executed within the Frac-N PLL to engage signal lock. After signal lock is established, the modulated buffered signal is then routed to a multi-stage amplifier for transmission. The differential signals at the output of the PA (RFOUTP, RFOUTN) are converted as single ended (SE) signals with off chip components as required. 10 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Transceiver functions 2.3.3 Clear channel assessment (CCA), energy detection (ED), and link quality indicator (LQI) The MKW2xD supports three clear channel assessment (CCA) modes of operation including energy detection (ED) and link quality indicator (LQI). Functionality for each of these modes is as follows. 2.3.3.1 CCA mode 1 CCA mode 1 has two functions: * To estimate the energy in the received baseband signal. This energy is estimated based on receiver signal strength indicator (RSSI). * To determine whether the energy is greater than a set threshold. The estimate of the energy can also be used as the Link Quality metric. In CCA Mode 1, the MKW2xD must warm up from Idle to Receive mode where RSSI averaging takes place. 2.3.3.2 CCA mode 2 CCA mode 2 detects whether there is any 802.15.4 signal transmitting in the frequency band that an 802.15.4 transmitter intends to transmit. From the definition of CCA mode 2 in the 802.15.4 standard, the requirement is to detect an 802.15.4 complied signal. Whether the detected energy is strong or not is not important for CCA mode 2. 2.3.3.3 CCA mode 3 CCA mode 3 as defined by 802.15.4 standard is implemented using a logical combination of CCA mode 1 and CCA mode 2. Specifically, CCA mode 3 operates in one of two operating modes: * CCA mode 3 is asserted if both CCA mode 1 and CCA mode 2 are asserted. * CCA mode 3 is asserted if either CCA mode 1 or CCA mode 2 is asserted. This mode setting is available through a programmable register. MKW2xD Data Sheet, Rev. 2, 05/2016 11 NXP Semiconductors Transceiver functions 2.3.3.4 Energy detection (ED) Energy detection (ED) is based on receiver signal strength indicator (RSSI) and correlator output for the 802.15.4 standard. ED is an average value of signal strength. The magnitude from this measurement is calculated from the digital RSSI value that is averaged over a 128 s duration. 2.3.3.5 Link quality indicator (LQI) Link quality indicator (LQI) is based on receiver signal strength indicator (RSSI) or correlator output for the 802.15.4 standard. In this mode, the RSSI measurement is done during normal packet reception. LQI computations for the MKW2xD are based on either digital RSSI or correlator peak values. This setting is executed through a register bit where the final LQI value is available 64 s after preamble is detected. If a continuous update of LQI based on RSSI throughout the packet is desired, it can be read in a separate 8-bit register by enabling continuous update in a register bit. 2.3.4 Packet processor The MKW2xD packet processor performs sophisticated hardware filtering of the incoming received packet to determine if the packet is both PHY- and MAC-compliant, is addressed to this device, if the device is a PAN coordinator and whether a message is pending for the sending device. The packet processor greatly reduces the packet filtering burden on software allowing it to tend to higher-layer tasks with a lower latency and smaller software footprint. 2.3.4.1 Features * Aggressive packet filtering to enable long, uninterrupted MCU sleep periods * Fully compliant with both 2003 and 2006 versions of the 802.15.4 wireless standard * Supports all frame types, including reserved types * Supports all valid 802.15.4 frame lengths * Enables auto-Tx acknowledge frames (no MCU intervention) by parsing of frame control field and sequence number * Supports all source and destination address modes, and also PAN ID compression * Supports broadcast address for PAN ID and short address mode 12 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Transceiver functions * Supports "promiscuous" mode, to receive all packets regardless of address- and rules-checking * Allows frame type-specific filtering (e.g., reject all but beacon frames) * Supports SLOTTED and non-SLOTTED modes * Includes special filtering rules for PAN coordinator devices * Enables minimum-turnaround Tx-acknowledge frames for data-polling requests by automatically determining message-pending status * Assists MCU in locating pending messages in its indirect queue for data-polling end devices * Makes available to MCU detailed status of frames that fail address- or ruleschecking. * Supports Dual PAN mode, allowing the device to exist on 2 PAN's simultaneously * Supports 2 IEEE addresses for the device * Supports active promiscuous mode 2.3.5 Packet buffering The packet buffer is a 128-byte random access memory (RAM) dedicated to the storage of 802.15.4 packet contents for both TX and RX sequences. For TX sequences, software stores the contents of the packet buffer starting with the frame length byte at packet buffer address 0 followed by the packet contents at the subsequent packet buffer addresses. For RX sequences the incoming packet's frame length is stored in a register external to the packet buffer. Software will read this register to determine the number of bytes of packet buffer to read. This facilitates DMA transfer through the SPI. For receive packets, an LQI byte is stored at the byte immediately following the last byte of the packet (frame length +1). Usage of the packet buffer for RX and TX sequences is on a time-shared basis; receive packet data will overwrite the contents of the packet buffer. Software can inhibit receive-packet overwriting of the packet buffer contents by setting the PB_PROTECT bit. This will block RX packet overwriting, but will not inhibit TX content loading of the packet buffer via the SPI. MKW2xD Data Sheet, Rev. 2, 05/2016 13 NXP Semiconductors Transceiver functions 2.3.5.1 Features * 128 byte buffer stores maximum length 802.15.4 packets * Same buffer serves both TX and RX sequences * The entire Packet Buffer can be uploaded or downloaded in a single SPI burst. * Automatic address auto-incrementing for burst accesses * Single-byte access mode supported. * Entire packet buffer can be accessed in hibernate mode * Under-run error interrupt supported 2.4 Dual PAN ID In the past, radio transceivers designed for IEEE 802.15.4 applications allowed a device to associate to one and only one PAN (Personal Area Network) at any given time. The MKW2xD represents a high-performance SiP that includes hardware support for a device to reside in two networks simultaneously. In optional Dual PAN mode, the device alternates between the two (2) PANs under hardware or software control. Hardware support for Dual PAN operation consists of two (2) sets of PAN and IEEE addresses for the device, two (2) different channels (one for each PAN) and a programmable timer to automatically switch PANs (including on-the-fly channel changing) without software intervention. There are control bits to configure and enable Dual PAN mode, and read only bits to monitor status in Dual PAN mode. A device can be configured to be a PAN coordinator on either network, both networks or neither. For the purpose of defining PAN in the context of Dual PAN mode, two (2) sets of network parameters are maintained; PAN0 and PAN1. PAN0 and PAN1 will be used to refer to the two (2) PANs where each parameter set uniquely identifies a PAN for Dual PAN mode. These parameters are described in Table 1. Table 1. PAN0 and PAN1 descriptions PAN0 PAN1 Channel0 (PHY_INT0, PHY_FRAC0) Channel1 (PHY_INT1, PHY_FRAC1) MacPANID0 (16-bit register) MacPANID1 (16-bit register) MacShortAddrs0 (16-bit register) MacShortAddrs1 (16-bit register) MacLongAddrs0 (64-bit registers) MacLongAddrs1 (64-bit registers) PANCORDNTR0 (1-bit register) PANCORDNTR1 (1-bit register) 14 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 System and power management During device initialization if Dual PAN mode is used, software will program both parameter sets to configure the hardware for operation on two (2) networks. 3 System and power management The MKW2xD is a low power device that also supports extensive system control and power management modes to maximize battery life and provide system protection. 3.1 Modes of operation The transceiver modes of operation include: * Idle mode * Doze mode * Low power (LP) / hibernate mode * Reset / powerdown mode * Run mode 3.2 Power management The MKW2xD power management is controlled through programming the modes of operation. Different modes allow for different levels of power-down and RUN operation. For the receiver, programmable power modes available are: * Preamble search * Preamble search sniff * Low Power Preamble Search (LPPS) * Fast Antenna Diversity (FAD) Preamble search * Packet decoding MKW2xD Data Sheet, Rev. 2, 05/2016 15 NXP Semiconductors Radio Peripherals 4 Radio Peripherals The MKW2xD provides a set of I/O pins useful for suppling a system clock to the MCU, controlling external RF modules/circuitry, and GPIO. 4.1 Clock output (CLK_OUT) MKW2xD integrates a programmable clock to source numerous frequencies for connection with various MCUs. Package pin 39 can be used to provide this clock source as required allowing the user to make adjustments per their application requirement. The transceiver CLK_OUT pin is internally connected to the MCU EXTAL pin so that no external connection is needed to drive the MCU clock. Care must be taken that the clock output signal does not interfere with the reference oscillator or the radio. Additional functionality this feature supports is: * XTAL domain can be completely gated off (hibernate mode) * SPI communication allowed in hibernate Table 2. CLK_OUT CLK_OUT_DIV [2:0] CLK_OUT frequency 0 32 MHz1 1 16 MHz 2 8 MHz 3 4 MHz 4 2 MHz 5 1 MHz 6 62.5 kHz 7 32.786 kHz 1 1 1. May require high drive strength for proper signal integrity. There is an enable/disable bit for CLK_OUT. When disabling, the clock output will optionally continue to run for 128 clock cycles after disablement. There is also be one (1) bit available to adjust the CLK_OUT I/O pad drive strength. 16 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Radio Peripherals 4.2 General-purpose input output (GPIO) In addition to the MCU supported GPIOs, the radio supports 2 GPIO pins. All I/O pins will have the same supply voltage and depending on the supply, can vary from 1.8 V up to 3.6 V. When the pin is configured as a general-purpose output or for peripheral use, there will be specific settings required per use case. Pin configuration will be executed by software to adjust input/output direction and drive strength, capability. When the pin is configured as a general-purpose input or for peripheral use, software (see Table 3) can enable a pull-up or pull-down device. Immediately after reset, all pins are configured as high-impedance general-purpose inputs with internal pull-up devices enabled. Features for these pins include: * Programmable output drive strength * Programmable output slew rate * Hi-Z mode * Programmable as outputs or inputs (default) Table 3. Pin configuration summary Pin function configuration Details I/O buffer full drive mode1 I/O buffer partial drive mode1 I/O buffer high impedance2 Units Min. Typ. Max. Source or sink -- 10 -- mA Source or sink -- 2 -- mA Off state -- -- 10 nA time3 2 4 6 ns No slew, partial drive Rise and fall time 2 4 6 ns Slew, full drive Rise and fall time 6 12 24 ns Slew, partial drive Rise and fall time 6 12 24 ns No slew, full drive Propagation 1. 2. 3. 4. 5. 6. Tolerance delay4, no slew Rise and fall Full drive5 -- -- 11 ns Propagation delay, no slew Partial drive6 -- -- 11 ns Propagation delay, slew Full drive -- -- 50 ns Propagation delay, slew Partial drive -- -- 50 ns For this drive condition, the output voltage will not deviate more than 0.5 V from the rail reference VOH or VOL. Leakage current applies for the full range of possible input voltage conditions. Rise and fall time values in reference to 20% and 80% Propagation Delay measured from/to 50% voltage point. Full drive values provided are in reference to a 75 pF load. Partial drive values provided are in reference to a 15 pF load. MKW2xD Data Sheet, Rev. 2, 05/2016 17 NXP Semiconductors Radio Peripherals 4.3 Serial peripheral interface (SPI) The MKW2xD SiP uses a SPI interface allowing the MCU to communicate with the radio's register set and packet buffer. The SPI is a slave-only interface; the MCU must drive R_SSEL_B, R_SCLK and R_MOSI. Write and read access to both direct and indirect registers is supported, and transfer length can be single-byte or bursts of unlimited length. Write and read access to the Packet buffer can also be single-byte or a burst mode of unlimited length. The SPI interface is asynchronous to the rest of the IC. No relationship between R_SCLK and MKW2xD's internal oscillator is assumed. And no relationship between R_SCLK and the CLK_OUT pin is assumed. All synchronization of the SPI interface to the IC takes place inside the SPI module. SPI synchronization takes place in both directions; register writes and register reads. The SPI is capable of operation in all power modes, except Reset. Operation in hibernate mode allows most transceiver registers and the complete packet buffer to be accessed in the lowest-power operating state enabling minimal power consumption, especially during the register-initialization phase of the radio. The SPI design features a compact, single-byte control word, reducing SPI access latency to a minimum. Most SPI access types require only a single-byte control word, with the address embedded in the control word. During control word transfer (the first byte of any SPI access), the contents of the IRQSTS1 register (MKW2xD radio's highest-priority status register) are always shifted out so that the MCU gets access to IRQSTS1, with the minimum possible latency, on every SPI access. 4.3.1 Features * 4-wire industry standard interface, supported by all MCUs * SPI R_SCLK maximum frequency 16 MHz (for SPI write accesses) * SPI R_SCLK maximum frequency 9 MHz (for SPI read accesses) * Write and read access to all radio registers (direct and indirect) * Write and read access to packet buffer * SPI accesses can be single-byte or burst * Automatic address auto-incrementing for burst accesses 18 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Radio Peripherals * The entire packet buffer can be uploaded or downloaded in a single SPI burst * Entire packet buffer and most registers can be accessed in hibernate mode * Built-in synchronization inside the SPI module to/from the rest of the radio 4.4 Antenna diversity To improve the reliability of RF connectivity to long range applications, the antenna diversity feature is supported without using the MCU through use of four dedicated control pins (package pins 44, 45, 46, and 47). Fast antenna diversity (FAD) mode supports this radio feature and, when enabled, will allow the choice of selection between two antennas during the preamble phase. By continually monitoring the received signal, the FAD block will select the first antenna of which the received signal has a correlation factor above a predefined progammable threshold. The FAD accomplishes the antenna selection by sequentially switching between the two antennas testing for the presence of suitably strong s0 symbol where the first antenna to reach this condition is then selected for the reception of the packet. The antenna's are monitored for a period of 28 s each. The antenna switching is continued until 1.5 valid s0 symbols are detected. The demodulator then continues with normal preamble search before declaring "Preamble Detect". 4.5 RF Output Power Distribution The following figure shows the linear region of the output and the typical power distribution of the radio as a function of PA_PWR [4:0] range. The PA_PWR [4:0] is the lower 5 bits of the PA_PWR 0x23 direct register and has a usable range of 3 to 31 decimal. MKW2xD Data Sheet, Rev. 2, 05/2016 19 NXP Semiconductors MKW2xD operating modes Figure 2. MKW2xD transmit power vs. PA_PWR step 5 MKW2xD operating modes For the discussion of this topic, the primary radio and MCU operating modes are combined so that overall power consumption can then be derived. Depending on the stop requirements of the user application, a variety of stop modes are available that provide state retention, partial power down or full power down of certain logic and/or memory. I/O states are held in all modes of operation. Both the radio and MCU's power modes are described as follows. The radio has 6 primary operating modes: * Reset / power down * Low power (LP) / hibernate * Doze (low power with reference oscillator active) 20 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MKW2xD operating modes * Idle * Receive * Transmit Table 4 lists and describes the transceivers power modes and consumption. Table 4. Transceiver Power Modes Mode Definition Reset / All IC functions off, leakage only. RST asserted. powerdow n Low Crystal reference oscillator off. (SPI is functional.) power / hibernate Doze2 Crystal reference oscillator on but CLK_OUT output available only if selected. Current consumption1 < 100 nA < 1 A 500 A3 (no CLK_OUT) Idle Crystal reference oscillator on with CLK_OUT output available only if selected. 3 700 A (no CLK_OUT) Receive Crystal reference oscillator on. Receiver on. < 19.5 mA 4 15 mA, LPPS mode Transmit 1. 2. 3. 4. 5. Crystal reference oscillator on. Transmitter on. < 18 mA 5 Conditions: VBAT and VBAT_2 = 2.7 V, nominal process @ 25C While in Doze mode, 4 MHz max frequency can be selected for CLK_OUT. Typical Signal sensitivity = -102 dBm RF output = 0 dBm The MCU has a variety of operating modes. For each run mode there is a corresponding wait and stop mode. Wait modes are similar to ARM sleep modes. Stop modes (VLPS, STOP) are similar to ARM sleep deep mode. The very low power run (VLPR) operating mode can drastically reduce runtime power when the maximum bus frequency is not required to handle the application needs. The three primary modes of operation are run, wait and stop. The WFI instruction invokes both wait and stop modes for the chip. The primary modes are augmented in a number of ways to provide lower power based on application needs. MKW2xD Data Sheet, Rev. 2, 05/2016 21 NXP Semiconductors MKW2xD electrical characteristics 5.1 Transceiver Transmit Current Distribution The following figure shows the relation between the transmit power generated by the radio and its current consumption. Figure 3. MKW2xD transmit power vs transmit current (Radio Only) 6 MKW2xD electrical characteristics 6.1 Radio recommended operating conditions Table 5. Recommended operating conditions Characteristic Symbol Min Typ Max Unit VBAT, VDDINT 1.8 2.7 3.6 Vdc Input Frequency fin 2.360 -- 2.480 GHz Ambient Temperature Range TA -40 25 105 C Power Supply Voltage (VBAT = VDDINT) Table continues on the next page... 22 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Ratings Table 5. Recommended operating conditions (continued) Characteristic Symbol Min Typ Max Unit Logic Input Voltage Low VIL 0 -- 30% VDDINT V Logic Input Voltage High VIH 70% VDDINT -- VDDINT V SPI Clock Rate fSPI -- -- 16.0 MHz RF Input Power Pmax -- -- 10 dBm Crystal Reference Oscillator Frequency (40 ppm over operating conditions to meet the 802.15.4 Standard.) fref 32 MHz only 6.2 Ratings 6.2.1 Thermal handling ratings Symbol Description Min. Max. Unit Notes TSTG Storage temperature -55 150 C 1 TSDR Solder temperature, lead-free -- 260 C 2 1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life. 2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. 6.2.2 Moisture handling ratings Symbol MSL Description Moisture sensitivity level Min. Max. Unit Notes -- 3 -- 1 1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices. 6.2.3 ESD handling ratings Symbol Description Min. Max. Unit Notes VHBM Electrostatic discharge voltage, human body model -2000 +2000 V 1 VCDM Electrostatic discharge voltage, charged-device model -500 +500 V 2 Table continues on the next page... MKW2xD Data Sheet, Rev. 2, 05/2016 23 NXP Semiconductors MCU Electrical characteristics Symbol ILAT Description Min. Max. Unit Notes Latch-up current at ambient temperature of 105C -100 +100 mA 3 1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM). 2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components. 3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test. 6.2.4 Voltage and current operating ratings Symbol Description Min. Max. Unit VDD Digital supply voltage -0.3 3.6 V IDD Digital supply current -- 155 mA VDIO Digital input voltage (except RESET, EXTAL, and XTAL) -0.3 VDD + 0.3 V VAIO Analog1, RESET, EXTAL, and XTAL input voltage -0.3 VDD + 0.3 V Maximum current single pin limit (applies to all digital pins) -25 25 mA ID VDD - 0.3 VDD + 0.3 V VUSB0_DP VDDA Analog supply voltage USB0_DP input voltage -0.3 3.63 V VUSB0_DM USB0_DM input voltage -0.3 3.63 V 1. Analog pins are defined as pins that do not have an associated general purpose I/O port function. 7 MCU Electrical characteristics 7.1 Maximum ratings Table 6. Maximum ratings Requirement Note: Description Symbol Rating level Unit Power Supply Voltage VBAT, VBAT2 -0.3 to 3.6 Vdc Digital Input Voltage Vin -0.3 to (VDDINT + 0.3) Vdc RF Input Power Pmax +10 dBm Maximum ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. ESD1 Human Body Model HBM 2000 Vdc Machine Model MM 200 Vdc Table continues on the next page... 24 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 6. Maximum ratings (continued) Requirement Description Symbol Rating level Unit Charged Device Model CDM 750 Vdc Power ElectroStatic Discharge / Direct Contact Power ElectroStatic Discharge / Indirect Contact EMC2 Langer IC / EFT / P201 Langer IC / EFT / P201 No damage / latch up to 4000 No soft failure / reset to 1000 PESD No damage / latch up to 6000 No soft failure / reset to 1000 No damage / latch up to 5 EFT (Electro Magnetic Fast Transient) Vdc No soft failure / reset to 5 No damage / latch up to 300 No soft failure / reset to 150 Vdc Vdc Vdc Junction Temperature TJ +125 C Storage Temperature Range Tstg -65 to +165 C 1. Electrostatic discharge on all device pads meet this requirement 2. Electromagnetic compatibility for this product is low stress rating level Note Maximum ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 7.2 AC electrical characteristics Unless otherwise specified, propagation delays are measured from the 50% to the 50% point, and rise and fall times are measured at the 20% and 80% points, as shown in the following figure. MKW2xD Data Sheet, Rev. 2, 05/2016 25 NXP Semiconductors MCU Electrical characteristics Input Signal High Low VIH 80% 50% 20% Midpoint1 VIL Fall Time Rise Time The midpoint is VIL + (VIH - VIL) / 2 Figure 4. Input signal measurement reference 7.3 Nonswitching electrical specifications 7.3.1 Voltage and current operating requirements Table 7. Voltage and current operating requirements Symbol Description Min. Max. Unit VDD Supply voltage 1.8 3.6 V VDDA Analog supply voltage 1.8 3.6 V VDD - VDDA VDD-to-VDDA differential voltage -0.1 0.1 V VSS - VSSA VSS-to-VSSA differential voltage -0.1 0.1 V 1.8 3.6 V * 2.7 V VDD 3.6 V 0.7 x VDD -- V * 1.7 V VDD 2.7 V 0.75 x VDD -- V * 2.7 V VDD 3.6 V -- 0.35 x VDD V * 1.7 V VDD 2.7 V -- 0.3 x VDD V 0.06 x VDD -- V VBAT VIH VIL RTC battery supply voltage Input high voltage Input low voltage VHYS Input hysteresis IICIO I/O pin DC injection current -- single pin * VIN < VSS-0.3V (Negative current injection) * VIN > VDD+0.3V (Positive current injection) IICcont Notes Contiguous pin DC injection current --regional limit, includes sum of negative injection currents or sum of positive injection currents of 16 contiguous pins * Negative current injection * Positive current injection 1 mA -3 -- -- +3 -25 -- -- +25 mA Table continues on the next page... 26 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 7. Voltage and current operating requirements (continued) Symbol VRAM VRFVBAT Description Min. Max. Unit VDD voltage required to retain RAM 1.2 -- V VPOR_VBAT -- V VBAT voltage required to retain the VBAT register file Notes 1. All analog pins are internally clamped to VSS and VDD through ESD protection diodes. If VIN is less than VAIO_MIN or greater than VAIO_MAX, a current limiting resistor is required. The negative DC injection current limiting resistor is calculated as R=(VAIO_MIN-VIN)/|IICAIO|. The positive injection current limiting resistor is calculated as R=(VINVAIO_MAX)/|IICAIO|. Select the larger of these two calculated resistances if the pin is exposed to positive and negative injection currents. 7.3.2 LVD and POR operating requirements Table 8. VDD supply LVD and POR operating requirements Symbol Description Min. Typ. Max. Unit VPOR Falling VDD POR detect voltage 0.8 1.1 1.5 V VLVDH Falling low-voltage detect threshold -- high range (LVDV=01) 2.48 2.56 2.64 V Low-voltage warning thresholds -- high range 1 VLVW1H * Level 1 falling (LVWV=00) 2.62 2.70 2.78 V VLVW2H * Level 2 falling (LVWV=01) 2.72 2.80 2.88 V VLVW3H * Level 3 falling (LVWV=10) 2.82 2.90 2.98 V VLVW4H * Level 4 falling (LVWV=11) 2.92 3.00 3.08 V -- 80 -- mV 1.54 1.60 1.66 V VHYSH Low-voltage inhibit reset/recover hysteresis -- high range VLVDL Falling low-voltage detect threshold -- low range (LVDV=00) Low-voltage warning thresholds -- low range 1 VLVW1L * Level 1 falling (LVWV=00) 1.74 1.80 1.86 V VLVW2L * Level 2 falling (LVWV=01) 1.84 1.90 1.96 V VLVW3L * Level 3 falling (LVWV=10) 1.94 2.00 2.06 V VLVW4L * Level 4 falling (LVWV=11) 2.04 2.10 2.16 V -- 60 -- mV VHYSL Low-voltage inhibit reset/recover hysteresis -- low range VBG Bandgap voltage reference 0.97 1.00 1.03 V tLPO Internal low power oscillator period -- factory trimmed 900 1000 1100 s MKW2xD Data Sheet, Rev. 2, 05/2016 Notes 27 NXP Semiconductors MCU Electrical characteristics 1. Rising threshold is the sum of falling threshold and hysteresis voltage Table 9. VBAT power operating requirements Symbol Description VPOR_VBAT Falling VBAT supply POR detect voltage Min. Typ. Max. Unit 0.8 1.1 1.5 V Notes 7.3.3 Voltage and current operating behaviors Table 10. Voltage and current operating behaviors Symbol VOH Description Min. Max. Unit * 2.7 V VDD 3.6 V, IOH = - 9 mA VDD - 0.5 -- V * 1.71 V VDD 2.7 V, IOH = -3 mA VDD - 0.5 -- V * 2.7 V VDD 3.6 V, IOH = -2 mA VDD - 0.5 -- V * 1.71 V VDD 2.7 V, IOH = -0.6 mA VDD - 0.5 -- V -- 100 mA * 2.7 V VDD 3.6 V, IOL = 9 mA -- 0.5 V * 1.71 V VDD 2.7 V, IOL = 3 mA -- 0.5 V * 2.7 V VDD 3.6 V, IOL = 2 mA -- 0.5 V * 1.71 V VDD 2.7 V, IOL = 0.6 mA -- 0.5 V -- 100 mA * @ full temperature range -- 1.0 A * @ 25 C -- 0.1 A -- 1 A Notes Output high voltage -- high drive strength Output high voltage -- low drive strength IOHT Output high current total for all ports VOL Output low voltage -- high drive strength Output low voltage -- low drive strength IOLT IIN Output low current total for all ports Input leakage current (per pin) IOZ Hi-Z (off-state) leakage current (per pin) 1 IOZ Total Hi-Z (off-state) leakage current (all input pins) -- 4 A RPU Internal pullup resistors 22 50 k 2 RPD Internal pulldown resistors 22 50 k 3 1. Tested by ganged leakage method 2. Measured at Vinput = VSS 3. Measured at Vinput = VDD 28 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics 7.3.4 Power mode transition operating behaviors All specifications except tPOR, and VLLSxRUN recovery times in the following table assume this clock configuration: * * * * CPU and system clocks = 50 MHz Bus clock = 50 MHz Flash clock = 25 MHz MCG mode: FEI Table 11. Power mode transition operating behaviors Symbol tPOR Description Min. After a POR event, amount of time from the point VDD reaches 1.71 V to execution of the first instruction across the operating temperature range of the chip. * 1.71 V/(VDD slew rate) 300 s Max. * VLLS2 RUN * VLLS3 RUN * LLS RUN * VLPS RUN * STOP RUN Notes s 1 -- 300 -- 1.7 V / (VDD slew rate) -- 150 s -- 79 s -- 79 s -- 6 s -- 5.2 s -- 5.2 s * 1.71 V/(VDD slew rate) > 300 s * VLLS1 RUN Unit 1. Normal boot (FTFL_OPT[LPBOOT]=1) 7.3.5 Power consumption operating behaviors Table 12. Power consumption operating behaviors Symbol IDDA IDD_RUN Description Analog supply current Min. Typ. Max. Unit Notes -- -- See note mA 1 Run mode current -- all peripheral clocks disabled, code executing from flash * @ 1.8 V * @ 3.0 V 2 -- 12.98 14 mA -- 12.93 13.8 mA Table continues on the next page... MKW2xD Data Sheet, Rev. 2, 05/2016 29 NXP Semiconductors MCU Electrical characteristics Table 12. Power consumption operating behaviors (continued) Symbol Description Min. IDD_RUN Run mode current -- all peripheral clocks enabled, code executing from flash * @ 1.8 V Typ. Max. Unit Notes 3, 4 -- 17.04 19.3 mA -- 17.01 18.9 mA -- 19.8 21.3 mA * @ 3.0 V * @ 25C * @ 125C IDD_WAIT Wait mode high frequency current at 3.0 V -- all peripheral clocks disabled -- 7.95 9.5 mA 2 IDD_WAIT Wait mode reduced frequency current at 3.0 V -- all peripheral clocks disabled -- 5.88 7.4 mA 5 IDD_STOP Stop mode current at 3.0 V * @ -40 to 25C * @ 50C * @ 70C * @ 105C -- 320 436 360 489 410 620 610 1100 A IDD_VLPR Very-low-power run mode current at 3.0 V -- all peripheral clocks disabled -- 754 -- A 6 IDD_VLPR Very-low-power run mode current at 3.0 V -- all peripheral clocks enabled -- 1.1 -- mA 7 IDD_VLPW Very-low-power wait mode current at 3.0 V -- 437 -- A 8 IDD_VLPS -- 7.33 24.2 14 32 28 48 110 280 3.14 4.8 6.48 28.3 13.85 44.6 55.53 71.3 2.19 3.4 4.35 4.35 8.92 24.6 35.33 45.3 1.77 3.1 2.81 13.8 5.20 22.3 19.88 34.2 1.03 1.8 IDD_LLS Very-low-power stop mode current at 3.0 V * @ -40 to 25C * @ 50C * @ 70C * @ 105C Low leakage stop mode current at 3.0 V * @ -40 to 25C * @ 50C * @ 70C * @ 105C IDD_VLLS3 Very low-leakage stop mode 3 current at 3.0 V * * * * -- -- @ -40 to 25C @ 50C @ 70C @ 105C IDD_VLLS2 Very low-leakage stop mode 2 current at 3.0 V * @ -40 to 25C * @ 50C * @ 70C * @ 105C IDD_VLLS1 Very low-leakage stop mode 1 current at 3.0 V * @ -40 to 25C -- -- A A A A A Table continues on the next page... 30 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 12. Power consumption operating behaviors (continued) Symbol Description Min. * @ 50C * @ 70C * @ 105C IDD_VLLS0 Very low-leakage stop mode 0 current at 3.0 V with POR detect circuit enabled * @ -40 to 25C * @ 50C * @ 70C * @ 105C -- IDD_VLLS0 Very low-leakage stop mode 0 current at 3.0 V with POR detect circuit disabled * @ -40 to 25C * @ 50C * @ 70C * @ 105C -- IDD_VBAT -- Average current when CPU is not accessing RTC registers at 3.0 V * @ -40 to 25C * @ 50C * @ 70C * @ 105C Typ. Max. 1.92 7.5 4.03 15.9 17.43 28.7 0.543 1.1 1.36 7.58 3.39 14.3 16.52 24.1 0.359 0.95 1.03 6.8 2.87 15.4 15.20 25.3 0.91 1.1 1.1 1.35 1.5 1.85 4.3 5.7 Unit Notes A A A 9 1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See each module's specification for its supply current. 2. 50 MHz core and system clock, 25 MHz bus clock, and 25 MHz flash clock. MCG configured for FEI mode. All peripheral clocks disabled. 3. 50 MHz core and system clock, 25 MHz bus clock, and 25 MHz flash clock. MCG configured for FEI mode. All peripheral clocks enabled, and peripherals are in active operation. 4. Max values are measured with CPU executing DSP instructions 5. 25 MHz core and system clock, 25 MHz bus clock, and 12.5 MHz flash clock. MCG configured for FEI mode. 6. 4 MHz core, system, and bus clock and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled. Code executing from flash. 7. 4 MHz core, system, and bus clock and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral clocks enabled but peripherals are not in active operation. Code executing from flash. 8. 4 MHz core, system, and bus clock and 1 MHz flash clock. MCG configured for BLPE mode. All peripheral clocks disabled. 9. Includes 32 kHz oscillator current and RTC operation. 7.3.5.1 Diagram: Typical IDD_RUN operating behavior The following data was measured under these conditions: * * * * MCG in FBE mode No GPIOs toggled Code execution from flash with cache enabled For the ALLOFF curve, all peripheral clocks are disabled except FTFL MKW2xD Data Sheet, Rev. 2, 05/2016 31 NXP Semiconductors MCU Electrical characteristics Figure 5. Run mode supply current vs. core frequency 32 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Figure 6. VLPR mode supply current vs. core frequency 7.3.6 EMC radiated emissions operating behaviors Table 13. EMC radiated emissions operating behaviors 1 Symbol Description Frequency band (MHz) Typ. Unit Notes 2, 3 VRE1 Radiated emissions voltage, band 1 0.15-50 19 dBV VRE2 Radiated emissions voltage, band 2 50-150 21 dBV VRE3 Radiated emissions voltage, band 3 150-500 19 dBV VRE4 Radiated emissions voltage, band 4 500-1000 11 dBV IEC level 0.15-1000 L -- VRE_IEC 3, 4 1. This data was collected on a MK20DN128VLH5 64pin LQFP device. 2. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150 kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits Measurement of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions--TEM Cell and Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic MKW2xD Data Sheet, Rev. 2, 05/2016 33 NXP Semiconductors MCU Electrical characteristics application code. The reported emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the measured orientations in each frequency range. 3. VDD = 3.3 V, TA = 25 C, fOSC = 12 MHz (crystal), fSYS = 48 MHz, fBUS = 48MHz 4. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions--TEM Cell and Wideband TEM Cell Method 7.3.7 Designing with radiated emissions in mind To find application notes that provide guidance on designing your system to minimize interference from radiated emissions: * Go to www.nxp.com. * Perform a keyword search for "EMC design." 7.3.8 Capacitance attributes Table 14. Capacitance attributes Symbol Description Min. Max. Unit CIN_A Input capacitance: analog pins -- 7 pF CIN_D Input capacitance: digital pins -- 7 pF 7.4 Switching specifications 7.4.1 Device clock specifications Table 15. Device clock specifications Symbol Description Min. Max. Unit System and core clock -- 50 MHz System and core clock when Full Speed USB in operation 20 -- MHz Bus clock -- 50 MHz fFLASH Flash clock -- 25 MHz fLPTMR LPTMR clock -- 25 MHz Notes Normal run mode fSYS fBUS VLPR mode1 fSYS System and core clock -- 4 MHz fBUS Bus clock -- 4 MHz Table continues on the next page... 34 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 15. Device clock specifications (continued) Symbol Description Min. Max. Unit fFLASH Flash clock -- 1 MHz fERCLK External reference clock -- 16 MHz LPTMR clock -- 25 MHz fLPTMR_pin fLPTMR_ERCLK LPTMR external reference clock -- 16 MHz fI2S_MCLK I2S master clock -- 12.5 MHz fI2S_BCLK I2S bit clock -- 4 MHz Notes 1. The frequency limitations in VLPR mode here override any frequency specification listed in the timing specification for any other module. 7.4.2 General switching specifications These general purpose specifications apply to all pins configured for: * GPIO signaling * Other peripheral module signaling not explicitly stated elsewhere Table 16. General switching specifications Symbol Description Min. Max. Unit Notes GPIO pin interrupt pulse width (digital glitch filter disabled) -- Synchronous path 1.5 -- Bus clock cycles 1, 2 GPIO pin interrupt pulse width (digital glitch filter disabled, analog filter enabled) -- Asynchronous path 100 -- ns 3 GPIO pin interrupt pulse width (digital glitch filter disabled, analog filter disabled) -- Asynchronous path 50 -- ns 3 External reset pulse width (digital glitch filter disabled) 100 -- ns 3 Port rise and fall time (high drive strength) 4 * Slew disabled * 1.71 VDD 2.7V -- 13 ns * 2.7 VDD 3.6V -- 7 ns * 1.71 VDD 2.7V -- 36 ns * 2.7 VDD 3.6V -- 24 ns * Slew enabled Port rise and fall time (low drive strength) 5 * Slew disabled MKW2xD Data Sheet, Rev. 2, 05/2016 -- 12 ns -- 6 ns 35 NXP Semiconductors MCU Electrical characteristics Table 16. General switching specifications Symbol Description Min. Max. Unit -- 36 ns -- 24 ns Notes * 1.71 VDD 2.7V * 2.7 VDD 3.6V * Slew enabled * 1.71 VDD 2.7V * 2.7 VDD 3.6V 1. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or may not be recognized. In Stop, VLPS, LLS, and VLLSx modes, the synchronizer is bypassed so shorter pulses can be recognized in that case. 2. The greater synchronous and asynchronous timing must be met. 3. This is the minimum pulse width that is guaranteed to be recognized as a pin interrupt request in Stop, VLPS, LLS, and VLLSx modes. 4. 75 pF load 5. 15 pF load 7.5 Thermal specifications 7.5.1 Thermal operating requirements Table 17. Thermal operating requirements Symbol Description Min. Max. Unit TJ Die junction temperature -40 125 C TA Ambient temperature1 -40 105 C 1. Maximum TA can be exceeded only if the user ensures that TJ does not exceed maximum TJ. The simplest method to determine TJ is: TJ = TA + RJA x chip power dissipation 7.5.2 Thermal attributes Board type Symbol Description 80 LQFP Unit Notes Single-layer (1s) RJA Thermal 50 resistance, junction to ambient (natural convection) C/W 1, 2 Four-layer (2s2p) RJA Thermal 35 resistance, junction to ambient C/W 1, 3 Table continues on the next page... 36 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Board type Symbol Description 80 LQFP Unit Notes (natural convection) Single-layer (1s) RJMA Thermal 39 resistance, junction to ambient (200 ft./min. air speed) C/W 1,3 Four-layer (2s2p) RJMA Thermal 29 resistance, junction to ambient (200 ft./min. air speed) C/W 1,3 -- RJB Thermal resistance, junction to board 19 C/W 4 -- RJC Thermal resistance, junction to case 8 C/W 5 -- JT Thermal characterization parameter, junction to package top outside center (natural convection) 2 C/W 6 1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions--Natural Convection (Still Air) with the single layer board horizontal. For the LQFP, the board meets the JESD51-3 specification. For the MAPBGA, the board meets the JESD51-9 specification. 3. Determined according to JEDEC Standard JESD51-6, Integrated Circuits Thermal Test Method Environmental Conditions--Forced Convection (Moving Air) with the board horizontal. 4. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental Conditions--Junction-to-Board. Board temperature is measured on the top surface of the board near the package. 5. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate temperature used for the case temperature. The value includes the thermal resistance of the interface material between the top of the package and the cold plate. 6. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions--Natural Convection (Still Air). 7.6 Peripheral operating requirements and behaviors 7.6.1 Core modules MKW2xD Data Sheet, Rev. 2, 05/2016 37 NXP Semiconductors MCU Electrical characteristics 7.6.1.1 Symbol J1 JTAG electricals Table 18. JTAG limited voltage range electricals Description Min. Max. Unit Operating voltage 2.7 3.6 V TCLK frequency of operation MHz * Boundary Scan 0 10 * JTAG and CJTAG 0 25 * Serial Wire Debug 0 50 1/J1 -- ns * Boundary Scan 50 -- ns * JTAG and CJTAG 20 -- ns * Serial Wire Debug 10 -- ns J2 TCLK cycle period J3 TCLK clock pulse width J4 TCLK rise and fall times -- 3 ns J5 Boundary scan input data setup time to TCLK rise 20 -- ns J6 Boundary scan input data hold time after TCLK rise 0 -- ns J7 TCLK low to boundary scan output data valid -- 25 ns J8 TCLK low to boundary scan output high-Z -- 25 ns J9 TMS, TDI input data setup time to TCLK rise 8 -- ns J10 TMS, TDI input data hold time after TCLK rise 1 -- ns J11 TCLK low to TDO data valid -- 17 ns J12 TCLK low to TDO high-Z J13 TRST assert time J14 TRST setup time (negation) to TCLK high -- 17 ns 100 -- ns 8 -- ns Table 19. JTAG full voltage range electricals Symbol J1 Description Min. Max. Unit Operating voltage 1.8 3.6 V TCLK frequency of operation MHz * Boundary Scan 0 10 * JTAG and CJTAG 0 20 * Serial Wire Debug 0 40 1/J1 -- ns * Boundary Scan 50 -- ns * JTAG and CJTAG 25 -- ns * Serial Wire Debug 12.5 -- ns J2 TCLK cycle period J3 TCLK clock pulse width Table continues on the next page... 38 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 19. JTAG full voltage range electricals (continued) Symbol Description Min. Max. Unit J4 TCLK rise and fall times -- 3 ns J5 Boundary scan input data setup time to TCLK rise 20 -- ns J6 Boundary scan input data hold time after TCLK rise 0 -- ns J7 TCLK low to boundary scan output data valid -- 25 ns J8 TCLK low to boundary scan output high-Z -- 25 ns J9 TMS, TDI input data setup time to TCLK rise 8 -- ns J10 TMS, TDI input data hold time after TCLK rise 1.4 -- ns J11 TCLK low to TDO data valid -- 22.1 ns J12 TCLK low to TDO high-Z -- 22.1 ns J13 TRST assert time 100 -- ns J14 TRST setup time (negation) to TCLK high 8 -- ns J2 J3 J3 TCLK (input) J4 J4 Figure 7. Test clock input timing TCLK J5 Data inputs J6 Input data valid J7 Data outputs Output data valid J8 Data outputs J7 Data outputs Output data valid Figure 8. Boundary scan (JTAG) timing MKW2xD Data Sheet, Rev. 2, 05/2016 39 NXP Semiconductors MCU Electrical characteristics TCLK J9 TDI/TMS J10 Input data valid J11 TDO Output data valid J12 TDO J11 TDO Output data valid Figure 9. Test Access Port timing TCLK J14 J13 TRST Figure 10. TRST timing 7.6.2 System modules There are no specifications necessary for the device's system modules. 7.6.3 Clock modules 40 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics 7.6.3.1 Symbol MCG specifications Table 20. MCG specifications Description Min. Typ. Max. Unit Notes fints_ft Internal reference frequency (slow clock) -- factory trimmed at nominal VDD and 25 C -- 32.768 -- kHz fints_t Internal reference frequency (slow clock) -- user trimmed 31.25 -- 39.0625 kHz fdco_res_t Resolution of trimmed average DCO output frequency at fixed voltage and temperature -- using SCTRIM and SCFTRIM -- 0.3 0.6 %fdco 1 fdco_res_t Resolution of trimmed average DCO output frequency at fixed voltage and temperature -- using SCTRIM only -- 0.2 0.5 %fdco 1 fdco_t Total deviation of trimmed average DCO output frequency over voltage and temperature -- +0.5/-0.7 2 %fdco 1, 2 fdco_t Total deviation of trimmed average DCO output frequency over fixed voltage and temperature range of 0-70C -- 0.3 1 %fdco 1, 2 fintf_ft Internal reference frequency (fast clock) -- factory trimmed at nominal VDD and 25C -- 4 -- MHz fintf_t Internal reference frequency (fast clock) -- user trimmed at nominal VDD and 25 C 3 -- 5 MHz floc_low Loss of external clock minimum frequency -- RANGE = 00 (3/5) x fints_t -- -- kHz floc_high Loss of external clock minimum frequency -- RANGE = 01, 10, or 11 (16/5) x fints_t -- -- kHz 31.25 -- 39.0625 kHz 20 20.97 25 MHz 40 41.94 50 MHz 60 62.91 75 MHz 80 83.89 100 MHz -- 23.99 -- MHz -- 47.97 -- MHz -- 71.99 -- MHz -- 95.98 -- MHz FLL ffll_ref fdco FLL reference frequency range DCO output frequency range Low range (DRS=00) 3, 4 640 x ffll_ref Mid range (DRS=01) 1280 x ffll_ref Mid-high range (DRS=10) 1920 x ffll_ref High range (DRS=11) 2560 x ffll_ref fdco_t_DMX3 DCO output frequency 2 Low range (DRS=00) 5,6 732 x ffll_ref Mid range (DRS=01) 1464 x ffll_ref Mid-high range (DRS=10) 2197 x ffll_ref High range (DRS=11) Table continues on the next page... MKW2xD Data Sheet, Rev. 2, 05/2016 41 NXP Semiconductors MCU Electrical characteristics Table 20. MCG specifications (continued) Symbol Description Min. Typ. Max. Unit -- 180 -- -- 150 -- -- -- 1 ms 48.0 -- 100 MHz -- 1200 -- A -- 700 -- A 2.0 -- 4.0 MHz Notes 2929 x ffll_ref Jcyc_fll FLL period jitter * fDCO = 48 MHz * fDCO = 98 MHz tfll_acquire FLL target frequency acquisition time ps 7 PLL fvco VCO operating frequency Ipll PLL operating current * PLL @ 96 MHz (fosc_hi_1 = 8 MHz, fpll_ref = 2 MHz, VDIV multiplier = 48) Ipll PLL operating current * PLL @ 48 MHz (fosc_hi_1 = 8 MHz, fpll_ref = 2 MHz, VDIV multiplier = 24) fpll_ref PLL reference frequency range Jcyc_pll PLL period jitter (RMS) Jacc_pll * fvco = 48 MHz -- 120 -- ps * fvco = 100 MHz -- 75 -- ps PLL accumulated jitter over 1s (RMS) 9 * fvco = 48 MHz -- 1350 -- ps * fvco = 100 MHz -- 600 -- ps Lock entry frequency tolerance 1.49 -- 2.98 % Dunl Lock exit frequency tolerance 4.47 -- 5.97 % Lock detector detection time 8 9 Dlock tpll_lock 8 -- -- 10-6 150 x + 1075(1/ fpll_ref) s 10 1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock mode). 2. 2 V <= VDD <= 3.6 V. 3. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=0. 4. The resulting system clock frequencies should not exceed their maximum specified values. The DCO frequency deviation (fdco_t) over voltage and temperature should be considered. 5. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32=1. 6. The resulting clock frequency must not exceed the maximum specified clock frequency of the device. 7. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed, DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running. 8. Excludes any oscillator currents that are also consuming power while PLL is in operation. 9. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise characteristics of each PCB and results will vary. 10. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL disabled (BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this specification assumes it is already running. 42 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics 7.6.3.2 7.6.3.2.1 Oscillator electrical specifications Oscillator DC electrical specifications Table 21. Oscillator DC electrical specifications Symbol Description Min. Typ. Max. Unit VDD Supply voltage 1.8 -- 3.6 V IDDOSC IDDOSC Supply current -- low-power mode (HGO=0) Notes 1 * 32 kHz -- 500 -- nA * 4 MHz -- 200 -- A * 8 MHz (RANGE=01) -- 300 -- A * 16 MHz -- 950 -- A * 24 MHz -- 1.2 -- mA * 32 MHz -- 1.5 -- mA Supply current -- high-gain mode (HGO=1) 1 * 32 kHz -- 5 -- A * 4 MHz -- 500 -- A * 8 MHz (RANGE=01) -- 600 -- A * 16 MHz -- 2.5 -- mA * 24 MHz -- 3 -- mA * 32 MHz -- 4 -- mA Cx EXTAL load capacitance -- -- -- 2, 3 Cy XTAL load capacitance -- -- -- 2, 3 RF Feedback resistor -- low-frequency, low-power mode (HGO=0) -- -- -- M Feedback resistor -- low-frequency, high-gain mode (HGO=1) -- 10 -- M Feedback resistor -- high-frequency, lowpower mode (HGO=0) -- -- -- M Feedback resistor -- high-frequency, high-gain mode (HGO=1) -- 1 -- M Series resistor -- low-frequency, low-power mode (HGO=0) -- -- -- k Series resistor -- low-frequency, high-gain mode (HGO=1) -- 200 -- k Series resistor -- high-frequency, low-power mode (HGO=0) -- -- -- k -- 0 -- k RS 2, 4 Series resistor -- high-frequency, high-gain mode (HGO=1) Table continues on the next page... MKW2xD Data Sheet, Rev. 2, 05/2016 43 NXP Semiconductors MCU Electrical characteristics Table 21. Oscillator DC electrical specifications (continued) Symbol 5 Vpp 1. 2. 3. 4. 5. Description Min. Typ. Max. Unit Peak-to-peak amplitude of oscillation (oscillator mode) -- low-frequency, low-power mode (HGO=0) -- 0.6 -- V Peak-to-peak amplitude of oscillation (oscillator mode) -- low-frequency, high-gain mode (HGO=1) -- VDD -- V Peak-to-peak amplitude of oscillation (oscillator mode) -- high-frequency, low-power mode (HGO=0) -- 0.6 -- V Peak-to-peak amplitude of oscillation (oscillator mode) -- high-frequency, high-gain mode (HGO=1) -- VDD -- V Notes VDD=3.3 V, Temperature =25 C See crystal or resonator manufacturer's recommendation Cx and Cy can be provided by using either integrated capacitors or external components. When low-power mode is selected, RF is integrated and must not be attached externally. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to any other device. 7.6.3.2.2 Symbol Oscillator frequency specifications Table 22. Oscillator frequency specifications Description Min. Typ. Max. Unit fosc_lo Oscillator crystal or resonator frequency -- lowfrequency mode (MCG_C2[RANGE]=00) 32 -- 40 kHz fosc_hi_1 Oscillator crystal or resonator frequency -- highfrequency mode (low range) (MCG_C2[RANGE]=01) 3 -- 8 MHz fosc_hi_2 Oscillator crystal or resonator frequency -- high frequency mode (high range) (MCG_C2[RANGE]=1x) 8 -- 32 MHz fec_extal Input clock frequency (external clock mode) -- -- 50 MHz tdc_extal Input clock duty cycle (external clock mode) 40 50 60 % Crystal startup time -- 32 kHz low-frequency, low-power mode (HGO=0) -- 750 -- ms Crystal startup time -- 32 kHz low-frequency, high-gain mode (HGO=1) -- 250 -- ms Crystal startup time -- 8 MHz high-frequency (MCG_C2[RANGE]=01), low-power mode (HGO=0) -- 0.6 -- ms Crystal startup time -- 8 MHz high-frequency (MCG_C2[RANGE]=01), high-gain mode (HGO=1) -- 1 -- ms tcst Notes 1, 2 3, 4 1. Other frequency limits may apply when external clock is being used as a reference for the FLL or PLL. 44 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics 2. When transitioning from FEI or FBI to FBE mode, restrict the frequency of the input clock so that, when it is divided by FRDIV, it remains within the limits of the DCO input clock frequency. 3. Proper PC board layout procedures must be followed to achieve specifications. 4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S register being set. NOTE The 32 kHz oscillator works in low power mode by default and cannot be moved into high power/gain mode. 7.6.3.3 32 kHz oscillator electrical characteristics 7.6.3.3.1 32 kHz oscillator DC electrical specifications Table 23. 32kHz oscillator DC electrical specifications Symbol Description Min. Typ. Max. Unit VBAT Supply voltage 1.8 -- 3.6 V Internal feedback resistor -- 100 -- M Cpara Parasitical capacitance of EXTAL32 and XTAL32 -- 5 7 pF Vpp1 Peak-to-peak amplitude of oscillation -- 0.6 -- V RF 1. When a crystal is being used with the 32 kHz oscillator, the EXTAL32 and XTAL32 pins should only be connected to required oscillator components and must not be connected to any other devices. 7.6.3.3.2 Symbol fosc_lo tstart 32 kHz oscillator frequency specifications Table 24. 32 kHz oscillator frequency specifications Description Min. Typ. Max. Unit Oscillator crystal -- 32.768 -- kHz Crystal start-up time -- 1000 -- ms 1 700 -- VBAT mV 2, 3 vec_extal32 Externally provided input clock amplitude Notes 1. Proper PC board layout procedures must be followed to achieve specifications. 2. This specification is for an externally supplied clock driven to EXTAL32 and does not apply to any other clock input. The oscillator remains enabled and XTAL32 must be left unconnected. 3. The parameter specified is a peak-to-peak value and VIH and VIL specifications do not apply. The voltage of the applied clock must be within the range of VSS to VBAT. 7.6.4 Memories and memory interfaces MKW2xD Data Sheet, Rev. 2, 05/2016 45 NXP Semiconductors MCU Electrical characteristics 7.6.4.1 Flash electrical specifications This section describes the electrical characteristics of the flash memory module. 7.6.4.1.1 Flash timing specifications -- program and erase The following specifications represent the amount of time the internal charge pumps are active and do not include command overhead. Table 25. NVM program/erase timing specifications Symbol Description Min. Typ. Max. Unit Notes thvpgm4 Longword Program high-voltage time -- 7.5 18 s -- thversscr Sector Erase high-voltage time -- 13 113 ms 1 -- 104 904 ms 1 Unit Notes thversblk256k Erase Block high-voltage time for 256 KB 1. Maximum time based on expectations at cycling end-of-life. 7.6.4.1.2 Symbol Flash timing specifications -- commands Table 26. Flash command timing specifications Description Min. Typ. Max. Read 1s Block execution time 1 trd1blk64k * 64 KB data flash -- -- 0.9 ms trd1blk256k * 256 KB program flash -- -- 1.7 ms trd1sec2k Read 1s Section execution time (flash sector) -- -- 60 s 1 tpgmchk Program Check execution time -- -- 45 s 1 trdrsrc Read Resource execution time -- -- 30 s 1 tpgm4 Program Longword execution time -- 65 145 s -- Erase Flash Block execution time 2 tersblk64k * 64 KB data flash -- 58 580 ms tersblk256k * 256 KB program flash -- 122 985 ms -- 14 114 ms tersscr Erase Flash Sector execution time Program Section execution time 2 -- tpgmsec512 * 512 bytes flash -- 2.4 -- ms tpgmsec1k * 1 KB flash -- 4.7 -- ms tpgmsec2k * 2 KB flash -- 9.3 -- ms trd1all Read 1s All Blocks execution time -- -- 1.8 ms 1 trdonce Read Once execution time -- -- 25 s 1 Table continues on the next page... 46 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 26. Flash command timing specifications (continued) Symbol Description Min. Typ. Max. Unit Notes tpgmonce Program Once execution time -- 65 -- s -- tersall Erase All Blocks execution time -- 250 2000 ms 2 tvfykey Verify Backdoor Access Key execution time -- -- 30 s 1 Swap Control execution time -- tswapx01 * control code 0x01 -- 200 -- s tswapx02 * control code 0x02 -- 70 150 s tswapx04 * control code 0x04 -- 70 150 s tswapx08 * control code 0x08 -- -- 30 s Program Partition for EEPROM execution time tpgmpart64k * 64 KB FlexNVM -- -- 138 -- ms Set FlexRAM Function execution time: tsetramff -- * Control Code 0xFF -- 70 -- s tsetram32k * 32 KB EEPROM backup -- 0.8 1.2 ms tsetram64k * 64 KB EEPROM backup -- 1.3 1.9 ms 260 s Byte-write to FlexRAM for EEPROM operation teewr8bers Byte-write to erased FlexRAM location execution time -- 175 Byte-write to FlexRAM execution time: teewr8b32k * 32 KB EEPROM backup teewr8b64k * 64 KB EEPROM backup 3 -- -- 385 1800 s 475 2000 s 260 s Word-write to FlexRAM for EEPROM operation teewr16bers Word-write to erased FlexRAM location execution time -- 175 Word-write to FlexRAM execution time: -- -- teewr16b32k * 32 KB EEPROM backup -- 385 1800 s teewr16b64k * 64 KB EEPROM backup -- 475 2000 s 540 s Longword-write to FlexRAM for EEPROM operation teewr32bers Longword-write to erased FlexRAM location execution time -- 360 Longword-write to FlexRAM execution time: -- -- teewr32b32k * 32 KB EEPROM backup -- 630 2050 s teewr32b64k * 64 KB EEPROM backup -- 810 2250 s 1. Assumes 25 MHz flash clock frequency. 2. Maximum times for erase parameters based on expectations at cycling end-of-life. 3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased. MKW2xD Data Sheet, Rev. 2, 05/2016 47 NXP Semiconductors MCU Electrical characteristics 7.6.4.1.3 Flash high voltage current behaviors Table 27. Flash high voltage current behaviors Symbol Description IDD_PGM IDD_ERS 7.6.4.1.4 Symbol Min. Typ. Max. Unit Average current adder during high voltage flash programming operation -- 2.5 6.0 mA Average current adder during high voltage flash erase operation -- 1.5 4.0 mA Reliability specifications Table 28. NVM reliability specifications Description Min. Typ.1 Max. Unit Notes Program Flash tnvmretp10k Data retention after up to 10 K cycles 5 50 -- years -- tnvmretp1k Data retention after up to 1 K cycles 20 100 -- years -- nnvmcycp Cycling endurance 10 K 50 K -- cycles 2 Data Flash tnvmretd10k Data retention after up to 10 K cycles 5 50 -- years -- tnvmretd1k Data retention after up to 1 K cycles 20 100 -- years -- nnvmcycd Cycling endurance 10 K 50 K -- cycles 2 FlexRAM as EEPROM tnvmretee100 Data retention up to 100% of write endurance 5 50 -- years -- tnvmretee10 Data retention up to 10% of write endurance 20 100 -- years -- Write endurance 3 nnvmwree16 * EEPROM backup to FlexRAM ratio = 16 35 K 175 K -- writes nnvmwree128 * EEPROM backup to FlexRAM ratio = 128 315 K 1.6 M -- writes nnvmwree512 * EEPROM backup to FlexRAM ratio = 512 1.27 M 6.4 M -- writes nnvmwree4k * EEPROM backup to FlexRAM ratio = 4096 10 M 50 M -- writes 1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant 25 C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering Bulletin EB619. 2. Cycling endurance represents number of program/erase cycles at -40 C Tj C. 3. Write endurance represents the number of writes to each FlexRAM location at -40 C Tj C influenced by the cycling endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and typical values assume all byte-writes to FlexRAM. 48 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics 7.6.4.2 EzPort switching specifications Num Table 29. EzPort switching specifications Description Min. Max. Unit Operating voltage 1.8 3.6 V EP1 EZP_CK frequency of operation (all commands except READ) -- fSYS/2 MHz EP1a EZP_CK frequency of operation (READ command) -- fSYS/8 MHz EP2 EZP_CS negation to next EZP_CS assertion 2 x tEZP_CK -- ns EP3 EZP_CS input valid to EZP_CK high (setup) 5 -- ns EP4 EZP_CK high to EZP_CS input invalid (hold) 5 -- ns EP5 EZP_D input valid to EZP_CK high (setup) 2 -- ns EP6 EZP_CK high to EZP_D input invalid (hold) 5 -- ns EP7 EZP_CK low to EZP_Q output valid -- EP8 EZP_CK low to EZP_Q output invalid (hold) 0 -- ns EP9 EZP_CS negation to EZP_Q tri-state -- 12 ns ns EZP_CK EP3 EP2 EP4 EZP_CS EP9 EP7 EP8 EZP_Q (output) EP5 EP6 EZP_D (input) Figure 11. EzPort Timing Diagram 7.6.5 Security and integrity modules MKW2xD Data Sheet, Rev. 2, 05/2016 49 NXP Semiconductors MCU Electrical characteristics 7.6.5.1 DryIce Tamper Electrical Specifications Information about security-related modules is not included in this document and is available only after a nondisclosure agreement (NDA) has been signed. To request an NDA, contact your local NXP sales representative. 7.6.6 Analog 7.6.6.1 ADC electrical specifications The 16-bit accuracy specifications listed in Table 1 and Table 31 are achievable on the differential pins ADCx_DP0, ADCx_DM0. All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy specifications. 7.6.6.1.1 16-bit ADC operating conditions Table 30. 16-bit ADC operating conditions Symbol Description Conditions Min. Typ.1 Max. Unit VDDA Supply voltage Absolute 1.8 -- 3.6 V VDDA Supply voltage Delta to VDD (VDD - VDDA) -100 0 +100 mV 2 VSSA Ground voltage Delta to VSS (VSS - VSSA) -100 0 +100 mV 2 VREFH ADC reference voltage high Absolute VDDA VDDA VDDA V 3 VREFL ADC reference voltage low Absolute VSSA VSSA VSSA V 4 VADIN Input voltage * 16-bit differential mode VREFL -- 31/32 * VREFH V * All other modes VREFL -- * 16-bit mode -- 8 10 * 8-bit / 10-bit / 12-bit modes -- 4 5 -- 2 5 CADIN RADIN RAS fADCK Input capacitance Input series resistance Notes VREFH pF k Analog source resistance (external) 13-bit / 12-bit modes 5 fADCK < 4 MHz -- -- 5 k ADC conversion clock frequency 13-bit mode 1.0 -- 18.0 MHz 6 Table continues on the next page... 50 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 30. 16-bit ADC operating conditions (continued) Description Conditions Min. Typ.1 Max. Unit Notes fADCK ADC conversion clock frequency 16-bit mode 2.0 -- 12.0 MHz 6 Crate ADC conversion rate 13-bit modes Symbol 7 No ADC hardware averaging 20.000 -- 818.330 Ksps Continuous conversions enabled, subsequent conversion time Crate ADC conversion rate 16-bit mode 7 No ADC hardware averaging 37.037 -- 461.467 Ksps Continuous conversions enabled, subsequent conversion time 1. Typical values assume VDDA = 3.0 V, Temp = 25 C, fADCK = 1.0 MHz, unless otherwise stated. Typical values are for reference only, and are not tested in production. 2. DC potential difference. 3. VREFH is internally tied to VDDA. 4. VREFL is internally tied to VSSA. 5. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as possible. The results in this data sheet were derived from a system that had < 8 analog source resistance. The RAS/CAS time constant should be kept to < 1 ns. 6. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear. 7. For guidelines and examples of conversion rate calculation, download the ADC calculator tool. SIMPLIFIED INPUT PIN EQUIVALENT CIRCUIT Pad leakage due to input protection ZAS RAS ZADIN SIMPLIFIED CHANNEL SELECT CIRCUIT RADIN ADC SAR ENGINE VADIN VAS CAS RADIN INPUT PIN INPUT PIN RADIN RADIN INPUT PIN CADIN Figure 12. ADC input impedance equivalency diagram MKW2xD Data Sheet, Rev. 2, 05/2016 51 NXP Semiconductors MCU Electrical characteristics 7.6.6.1.2 16-bit ADC electrical characteristics Table 31. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) Symbol Description Conditions1 Min. Typ.2 Max. Unit Notes 0.215 -- 1.7 mA 3 * ADLPC = 1, ADHSC = 0 1.2 2.4 3.9 MHz * ADLPC = 1, ADHSC = 1 2.4 4.0 6.1 MHz tADACK = 1/ fADACK * ADLPC = 0, ADHSC = 0 3.0 5.2 7.3 MHz * ADLPC = 0, ADHSC = 1 4.4 6.2 9.5 MHz LSB4 5 LSB4 5 LSB4 5 LSB4 VADIN = VDDA5 IDDA_ADC Supply current ADC asynchronous clock source fADACK Sample Time TUE DNL INL EFS EQ ENOB See Reference Manual chapter for sample times Total unadjusted error * 12-bit modes -- 4 6.8 * <12-bit modes -- 1.4 2.1 Differential nonlinearity * 12-bit modes -- 0.7 -1.1 to +1.9 * <12-bit modes -- 0.2 * 12-bit modes -- 1.0 * <12-bit modes -- 0.5 * 12-bit modes -- -4 -5.4 * <12-bit modes -- -1.4 -1.8 * 16-bit modes -- -1 to 0 -- * 13-bit modes -- -- 0.5 Integral non-linearity Full-scale error Quantization error Effective number of bits -0.3 to 0.5 -2.7 to +1.9 -0.7 to +0.5 LSB4 16-bit differential mode 6 * Avg = 32 12.8 14.5 * Avg = 4 11.9 13.8 -- -- bits bits 16-bit single-ended mode * Avg = 32 * Avg = 4 SINAD THD Signal-to-noise plus distortion See ENOB Total harmonic distortion 16-bit differential mode * Avg = 32 12.2 13.9 11.4 13.1 -- -- 6.02 x ENOB + 1.76 bits bits dB dB -- -94 7 -- dB 16-bit single-ended mode -- -85 -- Table continues on the next page... 52 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 31. 16-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued) Symbol Description Conditions1 Min. Typ.2 82 95 Max. Unit -- dB -- dB Notes * Avg = 32 SFDR Spurious free dynamic range 16-bit differential mode * Avg = 32 16-bit single-ended mode 78 7 90 * Avg = 32 EIL Input leakage error IIn x RAS mV IIn = leakage current (refer to the MCU's voltage and current operating ratings) Temp sensor slope Across the full temperature range of the device VTEMP25 Temp sensor voltage 25 C 1.55 1.62 1.69 mV/C 8 706 716 726 mV 8 1. All accuracy numbers assume the ADC is calibrated with VREFH = VDDA 2. Typical values assume VDDA = 3.0 V, Temp = 25 C, fADCK = 2.0 MHz unless otherwise stated. Typical values are for reference only and are not tested in production. 3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low power). For lowest power operation, ADC_CFG1[ADLPC] must be set, the ADC_CFG2[ADHSC] bit must be clear with 1 MHz ADC conversion clock speed. 4. 1 LSB = (VREFH - VREFL)/2N 5. ADC conversion clock < 16 MHz, Max hardware averaging (AVGE = %1, AVGS = %11) 6. Input data is 100 Hz sine wave. ADC conversion clock < 12 MHz. 7. Input data is 1 kHz sine wave. ADC conversion clock < 12 MHz. 8. ADC conversion clock < 3 MHz MKW2xD Data Sheet, Rev. 2, 05/2016 53 NXP Semiconductors MCU Electrical characteristics Typical ADC 16-bit Differential ENOB vs ADC Clock 100Hz, 90% FS Sine Input 15.00 14.70 14.40 14.10 ENOB 13.80 13.50 13.20 12.90 12.60 Hardware Averaging Disabled Averaging of 4 samples Averaging of 8 samples Averaging of 32 samples 12.30 12.00 1 2 3 4 5 6 7 8 9 10 11 12 ADC Clock Frequency (MHz) Figure 13. Typical ENOB vs. ADC_CLK for 16-bit differential mode Typical ADC 16-bit Single-Ended ENOB vs ADC Clock 100Hz, 90% FS Sine Input 14.00 13.75 13.50 13.25 13.00 ENOB 12.75 12.50 12.25 12.00 11.75 11.50 11.25 11.00 Averaging of 4 samples Averaging of 32 samples 1 2 3 4 5 6 7 8 9 10 11 12 ADC Clock Frequency (MHz) Figure 14. Typical ENOB vs. ADC_CLK for 16-bit single-ended mode 7.6.6.2 CMP and 6-bit DAC electrical specifications Table 32. Comparator and 6-bit DAC electrical specifications Symbol Description Min. Typ. VDD Supply voltage 1.8 -- 3.6 V Supply current, High-speed mode (EN=1, PMODE=1) -- -- 200 A IDDHS Max. Unit Table continues on the next page... 54 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 32. Comparator and 6-bit DAC electrical specifications (continued) Symbol Description Min. Typ. Max. Unit -- -- 20 A VSS - 0.3 -- VDD V -- -- 20 mV * CR0[HYSTCTR] = 00 -- 5 -- mV * CR0[HYSTCTR] = 01 -- 10 -- mV * CR0[HYSTCTR] = 10 -- 20 -- mV * CR0[HYSTCTR] = 11 -- 30 -- mV IDDLS Supply current, low-speed mode (EN=1, PMODE=0) VAIN Analog input voltage VAIO Analog input offset voltage VH Analog comparator hysteresis1 VCMPOh Output high VDD - 0.5 -- -- V VCMPOl Output low -- -- 0.5 V tDHS Propagation delay, high-speed mode (EN=1, PMODE=1) 20 50 200 ns tDLS Propagation delay, low-speed mode (EN=1, PMODE=0) 80 250 600 ns Analog comparator initialization delay2 -- -- 40 s 6-bit DAC current adder (enabled) -- 7 -- A IDAC6b INL 6-bit DAC integral non-linearity -0.5 -- 0.5 LSB3 DNL 6-bit DAC differential non-linearity -0.3 -- 0.3 LSB 1. Typical hysteresis is measured with input voltage range limited to 0.6 to VDD-0.6 V. 2. Comparator initialization delay is defined as the time between software writes to change control inputs (Writes to CMP_DACCR[DACEN], CMP_DACCR[VRSEL], CMP_DACCR[VOSEL], CMP_MUXCR[PSEL], and CMP_MUXCR[MSEL]) and the comparator output settling to a stable level. 3. 1 LSB = Vreference/64 MKW2xD Data Sheet, Rev. 2, 05/2016 55 NXP Semiconductors MCU Electrical characteristics 0.08 0.07 CMP Hystereris (V) 0.06 HYSTCTR Setting 0.05 00 0.04 01 10 11 0.03 0.02 0.01 0 0.1 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 Vin level (V) Figure 15. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 0) 56 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics 0.18 0.16 0.14 CMP Hysteresis (V) 0.12 HYSTCTR Setting 0.1 00 01 10 11 0.08 0.06 0.04 0.02 0 0.1 0.4 0.7 1 1.3 1.6 1.9 Vin level (V) 2.2 2.5 2.8 3.1 Figure 16. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 1) 7.6.7 Timers See General switching specifications. 7.6.8 Communication interfaces 7.6.8.1 USB electrical specifications The USB electricals for the USB On-the-Go module conform to the standards documented by the Universal Serial Bus Implementers Forum. For the most up-todate standards, visit usb.org. NOTE MKW2xD Data Sheet, Rev. 2, 05/2016 57 NXP Semiconductors MCU Electrical characteristics 7.6.8.2 USB DCD electrical specifications Table 33. USB0 DCD electrical specifications Symbol Description Min. Typ. Max. Unit VDP_SRC USB_DP source voltage (up to 250 A) 0.5 -- 0.7 V Threshold voltage for logic high 0.8 -- 2.0 V IDP_SRC VLGC USB_DP source current 7 10 13 A IDM_SINK USB_DM sink current 50 100 150 A RDM_DWN D- pulldown resistance for data pin contact detect 14.25 -- 24.8 k VDAT_REF Data detect voltage 0.25 0.33 0.4 V 7.6.8.3 VREG electrical specifications Table 34. VREG electrical specifications Symbol Description Min. Typ.1 Max. Unit VREGIN Input supply voltage 2.7 -- 5.5 V IDDon Quiescent current -- Run mode, load current equal zero, input supply (VREGIN) > 3.6 V -- 125 186 A IDDstby Quiescent current -- Standby mode, load current equal zero -- 1.27 30 A IDDoff Quiescent current -- Shutdown mode -- 650 -- nA -- -- 4 A * VREGIN = 5.0 V and temperature=25 C * Across operating voltage and temperature ILOADrun Maximum load current -- Run mode -- -- 120 mA ILOADstby Maximum load current -- Standby mode -- -- 1 mA VReg33out Regulator output voltage -- Input supply (VREGIN) > 3.6 V 3 3.3 3.6 V 2.1 2.8 3.6 V Regulator output voltage -- Input supply (VREGIN) < 3.6 V, pass-through mode 2.1 -- 3.6 V COUT External output capacitor 1.76 2.2 8.16 F ESR External output capacitor equivalent series resistance 1 -- 100 m ILIM Short circuit current -- 290 -- mA * Run mode * Standby mode VReg33out Notes 2 1. Typical values assume VREGIN = 5.0 V, Temp = 25 C unless otherwise stated. 2. Operating in pass-through mode: regulator output voltage equal to the input voltage minus a drop proportional to ILoad. 58 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics 7.6.8.4 DSPI switching specifications (limited voltage range) The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with master and slave operations. Many of the transfer attributes are programmable. The tables below provide DSPI timing characteristics for classic SPI timing modes. Refer to the DSPI chapter of the Reference Manual for information on the modified transfer formats used for communicating with slower peripheral devices. Table 35. Master mode DSPI timing (limited voltage range) Num Description Min. Max. Unit Operating voltage 2.7 3.6 V Frequency of operation -- 25 MHz 2 x tBUS -- ns Notes DS1 DSPI_SCK output cycle time DS2 DSPI_SCK output high/low time (tSCK/2) - 2 (tSCK/2) + 2 ns DS3 DSPI_PCSn valid to DSPI_SCK delay (tBUS x 2) - 2 -- ns 1 DS4 DSPI_SCK to DSPI_PCSn invalid delay (tBUS x 2) - 2 -- ns 2 DS5 DSPI_SCK to DSPI_SOUT valid -- 8.5 ns DS6 DSPI_SCK to DSPI_SOUT invalid -2 -- ns DS7 DSPI_SIN to DSPI_SCK input setup 15 -- ns DS8 DSPI_SCK to DSPI_SIN input hold 0 -- ns 1. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK]. 2. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC]. DSPI_PCSn DS3 DSPI_SCK (CPOL=0) DS7 DSPI_SIN DS4 DS8 First data DSPI_SOUT DS1 DS2 Data Last data DS5 First data DS6 Data Last data Figure 17. DSPI classic SPI timing -- master mode Table 36. Slave mode DSPI timing (limited voltage range) Num Description Operating voltage Frequency of operation Min. Max. Unit 2.7 3.6 V 12.5 MHz Table continues on the next page... MKW2xD Data Sheet, Rev. 2, 05/2016 59 NXP Semiconductors MCU Electrical characteristics Table 36. Slave mode DSPI timing (limited voltage range) (continued) Num Description Min. Max. Unit 4 x tBUS -- ns (tSCK/2) - 2 (tSCK/2) + 2 ns DS9 DSPI_SCK input cycle time DS10 DSPI_SCK input high/low time DS11 DSPI_SCK to DSPI_SOUT valid -- 10 ns DS12 DSPI_SCK to DSPI_SOUT invalid 0 -- ns DS13 DSPI_SIN to DSPI_SCK input setup 2 -- ns DS14 DSPI_SCK to DSPI_SIN input hold 7 -- ns DS15 DSPI_SS active to DSPI_SOUT driven -- 14 ns DS16 DSPI_SS inactive to DSPI_SOUT not driven -- 14 ns DSPI_SS DS10 DS9 DSPI_SCK DS15 (CPOL=0) DSPI_SOUT DS12 First data DS13 DSPI_SIN DS16 DS11 Last data Data DS14 First data Data Last data Figure 18. DSPI classic SPI timing -- slave mode 7.6.8.5 DSPI switching specifications (full voltage range) The DMA Serial Peripheral Interface (DSPI) provides a synchronous serial bus with master and slave operations. Many of the transfer attributes are programmable. The tables below provides DSPI timing characteristics for classic SPI timing modes. Refer to the DSPI chapter of the Reference Manual for information on the modified transfer formats used for communicating with slower peripheral devices. Table 37. Master mode DSPI timing (full voltage range) Num Description Min. Max. Unit Notes Operating voltage 1.8 3.6 V 1 Frequency of operation -- 12.5 MHz 4 x tBUS -- ns (tSCK/2) - 4 (tSCK/2) + 4 ns DS1 DSPI_SCK output cycle time DS2 DSPI_SCK output high/low time Table continues on the next page... 60 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 37. Master mode DSPI timing (full voltage range) (continued) Num Description Min. Max. Unit Notes DS3 DSPI_PCSn valid to DSPI_SCK delay (tBUS x 2) - 4 -- ns 2 DS4 DSPI_SCK to DSPI_PCSn invalid delay (tBUS x 2) - 4 -- ns 3 DS5 DSPI_SCK to DSPI_SOUT valid -- 10 ns DS6 DSPI_SCK to DSPI_SOUT invalid -4.5 -- ns DS7 DSPI_SIN to DSPI_SCK input setup 20.5 -- ns DS8 DSPI_SCK to DSPI_SIN input hold 0 -- ns 1. The DSPI module can operate across the entire operating voltage for the processor, but to run across the full voltage range the maximum frequency of operation is reduced. 2. The delay is programmable in SPIx_CTARn[PSSCK] and SPIx_CTARn[CSSCK]. 3. The delay is programmable in SPIx_CTARn[PASC] and SPIx_CTARn[ASC]. DSPI_PCSn DS3 DSPI_SCK (CPOL=0) DS7 DSPI_SIN DS1 DS2 DS4 DS8 First data DSPI_SOUT Data Last data DS5 First data DS6 Data Last data Figure 19. DSPI classic SPI timing -- master mode Table 38. Slave mode DSPI timing (full voltage range) Num Description Min. Max. Unit Operating voltage 1.8 3.6 V Frequency of operation -- 6.25 MHz 8 x tBUS -- ns (tSCK/2) - 4 (tSCK/2) + 4 ns DS9 DSPI_SCK input cycle time DS10 DSPI_SCK input high/low time DS11 DSPI_SCK to DSPI_SOUT valid -- 20 ns DS12 DSPI_SCK to DSPI_SOUT invalid 0 -- ns DS13 DSPI_SIN to DSPI_SCK input setup 2 -- ns DS14 DSPI_SCK to DSPI_SIN input hold 7 -- ns DS15 DSPI_SS active to DSPI_SOUT driven -- 19 ns DS16 DSPI_SS inactive to DSPI_SOUT not driven -- 19 ns MKW2xD Data Sheet, Rev. 2, 05/2016 61 NXP Semiconductors MCU Electrical characteristics DSPI_SS DS10 DS9 DSPI_SCK DS15 (CPOL=0) DSPI_SOUT DS12 First data DS13 DSPI_SIN DS16 DS11 Last data Data DS14 First data Data Last data Figure 20. DSPI classic SPI timing -- slave mode 7.6.8.6 I2C See General switching specifications. 7.6.8.7 UART See General switching specifications. 7.6.8.8 Normal Run, Wait and Stop mode performance over the full operating voltage range This section provides the operating performance over the full operating voltage for the device in Normal Run, Wait and Stop modes. Due to a limited set of pin availability in the SiP, the I2S/SAI block is usable only for receive mode and must be configured as a slave. Table 39. I2S/SAI master mode timing Num. Characteristic Min. Max. Unit Operating voltage 1.8 3.6 V S1 I2S_MCLK cycle time 40 -- ns S2 I2S_MCLK (as an input) pulse width high/low 45% 55% MCLK period S3 I2S_TX_BCLK/I2S_RX_BCLK cycle time (output) 80 -- ns S4 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% BCLK period S5 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ I2S_RX_FS output valid -- 15 ns S6 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ I2S_RX_FS output invalid 0 -- ns Table continues on the next page... 62 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics Table 39. I2S/SAI master mode timing (continued) Num. Characteristic Min. Max. Unit S7 I2S_TX_BCLK to I2S_TXD valid -- 15 ns S8 I2S_TX_BCLK to I2S_TXD invalid 0 -- ns S9 I2S_RXD/I2S_RX_FS input setup before I2S_RX_BCLK 25 -- ns S10 I2S_RXD/I2S_RX_FS input hold after I2S_RX_BCLK 0 -- ns S1 S2 S2 I2S_MCLK (output) S3 I2S_TX_BCLK/ I2S_RX_BCLK (output) S4 S4 S6 S5 I2S_TX_FS/ I2S_RX_FS (output) S10 S9 I2S_TX_FS/ I2S_RX_FS (input) S7 S8 S7 S8 I2S_TXD S9 S10 I2S_RXD Figure 21. I2S/SAI timing -- master modes Table 40. I2S/SAI slave mode timing Num. Characteristic Min. Max. Unit Operating voltage 1.8 3.6 V S11 I2S_TX_BCLK/I2S_RX_BCLK cycle time (input) 80 -- ns S12 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low (input) 45% 55% MCLK period S13 I2S_TX_FS/I2S_RX_FS input setup before I2S_TX_BCLK/I2S_RX_BCLK 10 -- ns S14 I2S_TX_FS/I2S_RX_FS input hold after I2S_TX_BCLK/I2S_RX_BCLK 2 -- ns S15 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output valid -- 29 ns S16 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output invalid 0 -- ns S17 I2S_RXD setup before I2S_RX_BCLK 10 -- ns S18 I2S_RXD hold after I2S_RX_BCLK 2 -- ns -- 21 ns S19 I2S_TX_FS input assertion to I2S_TXD output MKW2xD Data Sheet, Rev. 2, 05/2016 valid1 63 NXP Semiconductors MCU Electrical characteristics 1. Applies to first bit in each frame and only if the TCR4[FSE] bit is clear S11 S12 I2S_TX_BCLK/ I2S_RX_BCLK (input) S12 S15 S16 I2S_TX_FS/ I2S_RX_FS (output) S13 I2S_TX_FS/ I2S_RX_FS (input) S19 S14 S15 S16 S15 S16 I2S_TXD S17 S18 I2S_RXD Figure 22. I2S/SAI timing -- slave modes 7.6.8.9 VLPR, VLPW, and VLPS mode performance over the full operating voltage range This section provides the operating performance over the full operating voltage for the device in VLPR, VLPW, and VLPS modes. Due to a limited set of pin availability in the SiP, the I2S/SAI block is usable only for receive mode and must be configured as a slave. Table 41. I2S/SAI master mode timing in VLPR, VLPW, and VLPS modes (full voltage range) Num. Characteristic Min. Max. Unit Operating voltage 1.8 3.6 V S1 I2S_MCLK cycle time 62.5 -- ns S2 I2S_MCLK pulse width high/low 45% 55% MCLK period S3 I2S_TX_BCLK/I2S_RX_BCLK cycle time (output) 250 -- ns S4 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low 45% 55% BCLK period S5 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ I2S_RX_FS output valid -- 45 ns S6 I2S_TX_BCLK/I2S_RX_BCLK to I2S_TX_FS/ I2S_RX_FS output invalid 0 -- ns S7 I2S_TX_BCLK to I2S_TXD valid -- 45 ns S8 I2S_TX_BCLK to I2S_TXD invalid 0 -- ns S9 I2S_RXD/I2S_RX_FS input setup before I2S_RX_BCLK 75 -- ns S10 I2S_RXD/I2S_RX_FS input hold after I2S_RX_BCLK 0 -- ns 64 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 MCU Electrical characteristics S1 S2 S2 I2S_MCLK (output) S3 I2S_TX_BCLK/ I2S_RX_BCLK (output) S4 S4 S6 S5 I2S_TX_FS/ I2S_RX_FS (output) S10 S9 I2S_TX_FS/ I2S_RX_FS (input) S7 S8 S7 S8 I2S_TXD S9 S10 I2S_RXD Figure 23. I2S/SAI timing -- master modes Table 42. I2S/SAI slave mode timing in VLPR, VLPW, and VLPS modes (full voltage range) Num. Characteristic Min. Max. Unit Operating voltage 1.8 3.6 V S11 I2S_TX_BCLK/I2S_RX_BCLK cycle time (input) 250 -- ns S12 I2S_TX_BCLK/I2S_RX_BCLK pulse width high/low (input) 45% 55% MCLK period S13 I2S_TX_FS/I2S_RX_FS input setup before I2S_TX_BCLK/I2S_RX_BCLK 30 -- ns S14 I2S_TX_FS/I2S_RX_FS input hold after I2S_TX_BCLK/I2S_RX_BCLK 2 -- ns S15 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output valid -- 87 ns S16 I2S_TX_BCLK to I2S_TXD/I2S_TX_FS output invalid 0 -- ns S17 I2S_RXD setup before I2S_RX_BCLK 30 -- ns S18 I2S_RXD hold after I2S_RX_BCLK 2 -- ns S19 I2S_TX_FS input assertion to I2S_TXD output valid1 -- 72 ns 1. Applies to first bit in each frame and only if the TCR4[FSE] bit is clear MKW2xD Data Sheet, Rev. 2, 05/2016 65 NXP Semiconductors Transceiver Electrical Characteristics S11 S12 I2S_TX_BCLK/ I2S_RX_BCLK (input) S12 S15 S16 I2S_TX_FS/ I2S_RX_FS (output) S13 I2S_TX_FS/ I2S_RX_FS (input) S19 S14 S15 S16 S15 S16 I2S_TXD S17 S18 I2S_RXD Figure 24. I2S/SAI timing -- slave modes 8 Transceiver Electrical Characteristics 8.1 DC electrical characteristics Table 43. DC electrical characteristics (VBAT, VBAT2 = 2.7 V, TA=25 C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Power Supply Current (VBAT + VBAT2) Reset / power down1 Ileakage -- <60 <100 nA Hibernate1 ICCH -- <1 -- A Doze (No CLK_OUT) ICCD -- 500 -- A Idle (No CLK_OUT) ICCI -- 700 -- A Transmit mode (0 dBm nominal output power) ICCT -- 17 18 mA Receive mode (normal) ICCR -- 19 19.5 mA Receive mode (power preamble search) 15 (LPPS) Input current (VIN = 0 V or VDDINT) (All digital inputs) IIN -- -- 1 A Input low voltage (all digital inputs) VIL 0 -- 30% VDDINT V Input high voltage (all digital inputs) VIH 70% VDDINT -- VDDINT V Output high voltage (IOH = -1 mA) (all digital outputs) VOH 80% VDDINT -- VDDINT V Output low voltage (IOL = 1 mA) (all digital outputs) VOL 0 -- 20% VDDINT V 1. To attain specified low power current, all GPIO and other digital IO must be handled properly. 66 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Transceiver Electrical Characteristics 8.2 AC electrical characteristics Table 44. Receiver AC electrical characteristics (VBAT, VDDINT = 2.7 V, TA=25 C, fref = 32 MHz unless otherwise noted) Characteristic Sensitivity for 1% packet error rate (PER) (-40 to +105 C) Symbol Min Typ Max Unit SENSper -- -99 -97 dBm Sensitivity for 1% packet error rate (PER) (+25 C) SENSper -- -102 Saturation (maximum input level) SENSmax -10 -- -- dBm dBm +5 MHz (adjacent channel) -- 39 -- dB -5 MHz (adjacent channel) -- 33 -- dB +10 MHz (alternate channel) -- 50 -- dB -10 MHz (alternate channel) -- 50 -- dB >= 15 MHz -- 58 -- dB Frequency error tolerance -- -- 200 kHz Symbol rate error tolerance 80 -- -- ppm Channel rejection for dual port mode (1% PER and desired signal -82 dBm) Table 45. Transmitter AC electrical characteristics (VBAT, VDDINT = 2.7 V, TA=25 C, fref = 32 MHz unless otherwise noted) Characteristic Min Typ Max Unit absolute limit from -40C to -30 -- -- dBm Power Spectral Density2, Relative limit from -40C to +105C -20 -- -- dB -2 0 2 dBm -- 8 -- dBm -- 8 13 % -- 40 -- dB Power spectral +105C Symbol density1, Nominal output power3 Pout Maximum output power3 Error vector magnitude Output power control range4 Over the air data rate EVM -- 250 -- kbps 2nd harmonic5 -- <-50 <-40 dBm 3rd harmonic5 -- <-50 <-40 dBm 1. [f-fc] > 3.5 MHz, average spectral power is measured in 100 kHz resolution BW. 2. For the relative limit, the reference level is the highest reference power measured within 1 MHz of the carrier frequency. 3. Measurement is at the package pin. 4. Measurement is at the package pin on the output of the Tx/Rx switch. It does not degrade more than 2 dB across temperature and an additional 1 dB across all processes. Power adjustment will span nominally from -35 dBm to +8 dBm in 21 steps @ 2 dBm / step. 5. Measured with output power set to nominal (0 dBm) and temperature @ 25C. Trap filter is needed. MKW2xD Data Sheet, Rev. 2, 05/2016 67 NXP Semiconductors Transceiver Electrical Characteristics Table 46. RF port impedance Characteristic Symbol RFIN Pins for internal T/R switch configuration, TX mode Zin Typ 14.7 - j215 2.360 GHz 2.420 GHz 13.7 j18.7 2.480 GHz 13 - j16.3 RFIN Pins for internal or external T/R switch configuration, RX mode Unit Zin Ohm 14 - j9.5 2.360 GHz Ohm 13 - j7.6 2.420 GHz 12.3 - j5.6 2.480 GHz 8.3 SPI timing: R_SSEL_B to R_SCLK The following diagram describes timing constraints that must be guaranteed by the system designer. R_MOSI R_SCLK tASC t CSC t CKH t DT t CKL Figure 25. SPI timing: R_SSEL_B to R_SCLK tCSC (CS-to-SCK delay): 31.25 ns tASC (After SCK delay): 31.25 ns tDT (Minimum CS idle time): 62.5 ns tCKH (Minimum R_SCLK high time): 31.25 ns (for SPI writes); 55.55 ns (for SPI reads) tCKL (Minimum R_SCLK low time): 31.25 ns (for SPI writes); 55.55 ns (for SPI reads) Note The SPI master device deasserts R_SSEL_B only on byte boundaries, and only after guaranteeing the tASC constraint shown above. 68 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Crystal oscillator reference frequency 8.4 SPI timing: R_SCLK to R_MOSI and R_MISO The following diagram describes timing constraints that must be guaranteed by the system designer. These constraints apply to the Master SPI (R_MOSI), and are guaranteed by the radio SPI (R_MISO). R_SCLK R_MOSI R_MISO tDSU t DH Figure 26. SPI timing: R_SCLK to R_MOSI and R_MISO tDSU (data-to-SCK setup): 10 ns tDH (SCK-to-data hold): 10 ns 9 Crystal oscillator reference frequency This section provides application specific information regarding crystal oscillator reference design and recommended crystal usage. 9.1 Crystal oscillator design considerations The IEEE (R) 802.15.4 Standard requires that frequency tolerance be kept within 40 ppm accuracy. This means that a total offset up to 80 ppm between transmitter and receiver will still result in acceptable performance. The MKW2xD transceiver provides on board crystal trim capacitors to assist in meeting this performance, while the bulk of the crystal load capacitance is external. MKW2xD Data Sheet, Rev. 2, 05/2016 69 NXP Semiconductors Crystal oscillator reference frequency 9.2 Crystal requirements The suggested crystal specification for the MKW2xD is shown in Table 47. A number of the stated parameters are related to desired package, desired temperature range and use of crystal capacitive load trimming. Table 47. MKW2xD crystal specifications Parameter Value Unit Frequency 32 MHz Frequency tolerance (cut tolerance) 10 ppm at 25C Frequency stability (temperature) 25 ppm Over desired temperature range Aging1 2 ppm max Equivalent series resistance 60 max Load capacitance 5-9 pF Shunt capacitance <2 pF Mode of oscillation Condition max fundamental 1. A wider aging tolerance may be acceptable if application uses trimming at production final test. 70 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Pin diagrams and pin assignments 10 Pin diagrams and pin assignments VDD_REGD ANT_A ANT_B RX_SWITCH TX_SWITCH GND_PA RF_OUTP GND_PA RF_OUTN VDD_PA VDD_IF VDD_RF VBAT_RF XTAL_32M 10.1 MKW21D256/MKW21D512 Pin Assignment EXTAL_32M 1 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 GPIO1 2 57 58 41 GPIO2 3 40 PTA19/XTAL PTC4/LLWU_P8 4 59 60 39 PTA18/EXTAL/CLK_OUT PTC5/LLWU_P9 5 38 VDD_MCU PTC6/LLWU_P10 6 61 62 37 PTA4/LLWU_P3 PTC7 7 36 PTA3 PTD1 8 35 PTA2 PTD2/LLWU_P13 9 34 PTA1 33 PTA0 MKW21D256/512 63 GND flag GND flag VBAT2_RF RESET_B PTD3 10 PTD4/LLWU_P14 11 32 VBAT_MCU PTD5 12 31 EXTAL_32 PTD6/LLWU_P15 13 30 MKW2xD Data Sheet, Rev. 2, 05/2016 XTAL_32 TAMPER0/RTC_WAKEUP_B VSSA VREFL VDDA VREFH PTE19 PTE17 PTE18 PTE16 VDD_MCU PTE3 PTE4/LLWU_P2 PTE2/LLWU_P1 PTE0 14 29 15 16 17 18 19 20 21 22 23 24 25 26 27 28 PTE1/LLWU_P0 PTD7 71 NXP Semiconductors Pin diagrams and pin assignments 1 GPIO1 2 GPIO2 3 PTC4/LLWU_P8 4 PTC5/LLWU_P9 5 PTC6/LLWU_P10 6 PTC7 7 PTD1 8 PTD2/LLWU_P13 9 VDD_REGD ANT_A ANT_B RX_SWITCH TX_SWITCH GND_PA RF_OUTP RF_OUTN GND_PA VDD_PA VDD_RF VDD_IF 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 MKW22/24D512 (USB) EXTAL_32M VBAT_RF XTAL_32M 10.2 MKW22/24D512V Pin Assignment 57 58 63 GND flag 59 60 61 62 GND flag 41 VBAT2_RF RESET_B 40 PTA19/XTAL 39 PTA18/EXTAL/CLK_OUT 38 VDD_MCU 37 PTA4/LLWU_P3 36 PTA3 35 PTA2 34 PTA1 33 PTA0 PTD3 10 PTD4/LLWU_P14 11 32 VBAT_MCU PTD5 12 31 EXTAL_32 PTD6/LLWU_P15 13 30 XTAL_32 TAMPER0/RTC_WAKEUP_B VSSA VREFL VREFH VDDA VREGIN VOUT33 USB0_DP USB0_DM VDD_MCU PTE4/LLWU_P2 PTE3 PTE2/LLWU_P1 PTE0 14 29 15 16 17 18 19 20 21 22 23 24 25 26 27 28 PTE1/LLWU_P0 PTD7 10.3 Pin assignments Note SPI1 (ALT2): SPI1 is dedicated to the radio and is not an alternate MCU peripheral. Table 48. Pin Assignments MKW MKW 22/24 21D25 D512 6/512 (USB) Pin Name Default 1 1 EXTAL _32M EXTAL_32M 2 2 GPIO1 GPIO1 3 3 GPIO2 GPIO2 ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EZPO RT Table continues on the next page... 72 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Pin diagrams and pin assignments Table 48. Pin Assignments (continued) MKW MKW 22/24 21D25 D512 6/512 (USB) Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 4 4 PTC4/ LLWU_ P8 Disabled PTC4/ SPI0_ UART1 FTM0_ LLWU_ PCS0 _TX CH3 P8 CMP1_ OUT 5 5 PTC5/ LLWU_ P9 Disabled PTC5/ SPI0_ LPTM I2S0_R LLWU_ SCK R0_AL XD0 P9 T2 CMP0_ OUT 6 6 PTC6/ LLWU_ P10 CMP0_IN0 CMP0_ PTC6/ SPI0_ PDB0_ I2S0_R IN0 LLWU_ SOUT EXTR X_BCL P10 G K I2S0_ MCLK 7 7 PTC7 CMP0_IN1 CMP0_ PTC7 IN1 SPI0_ USB_S I2S0_R SIN OF_O X_FS UT 8 8 PTD1 ADC0_SE5b ADC0_ PTD1 SE5b SPI0_ UART2 SCK _CTS_ b 9 9 PTD2/ LLWU_ P13 Disabled 10 10 PTD3 Disabled 11 11 PTD4/ LLWU_ P14 ADC0_SE21 ADC0_ PTD4/ SPI0_ UART0 FTM0_ SE21 LLWU_ PCS1 _RTS_ CH4 P14 b EWM_I N 12 12 PTD5 ADC0_SE6b ADC0_ PTD5 SE6b SPI0_ UART0 FTM0_ PCS2 _CTS_ CH5 b/ UART0 _COL_ b EWM_ OUT_b 13 13 PTD6/ LLWU_ P15 ADC0_SE7b ADC0_ PTD6/ SPI0_ UART0 FTM0_ SE7b LLWU_ PCS3 _RX CH6 P15 FTM0_ FLT0 14 14 PTD7 ADC0_SE22 ADC0_ PTD7 SE22 CMT_I UART0 FTM0_ RO _TX CH7 FTM0_ FLT1 15 15 PTE0 ADC0_SE10 ADC0_ PTE0 SE10 SPI1_ UART1 PCS1 _TX 16 16 PTE1/ LLWU_ P0 DC0_SE11 ADC0_ PTE1/ SPI1_ UART1 SE11 LLWU_ SOUT _RX P0 TRAC I2C1_S SPI1_ E_D3 CL SIN 17 17 PTE2/ LLWU_ P1 ADC0_DP1 ADC0_ PTE2/ SPI1_ UART1 DP1 LLWU_ SCK _CTS_ P1 b TRAC E_D2 EZPO RT PTD2/ SPI0_ UART2 I2C0_S LLWU_ SOUT _RX CL P13 PTD3 SPI0_ UART2 I2C0_S SIN _TX DA TRAC I2C1_S RTC_C E_CLK DA LKOUT OUT Table continues on the next page... MKW2xD Data Sheet, Rev. 2, 05/2016 73 NXP Semiconductors Pin diagrams and pin assignments Table 48. Pin Assignments (continued) MKW MKW 22/24 21D25 D512 6/512 (USB) Pin Name Default ALT0 ALT1 ADC0_ PTE3 DM1 ALT2 ALT3 ALT4 SPI1_ UART1 SIN _RTS_ b ALT5 ALT6 18 18 PTE3 ADC0_DM1 TRAC E_D1 19 19 PTE4/ LLWU_ P2 Disabled 20 20 VDD_M CU VDD 21 PTE16 ADC0_SE4a ADC0_ PTE16 SPI0_ UART2 FTM_C SE4a PCS0 _TX LKIN0 FTM0_ FLT3 22 PTE17 ADC0_SE5a ADC0_ PTE17 SPI0_ UART2 FTM_C SE5a SCK _RX LKIN1 LPTM R0_AL T3 23 PTE18 ADC0_SE6a ADC0_ PTE18 SPI0_ UART2 I2C0_S SE6a SOUT _CTS_ DA b 24 PTE19 ADC0_SE7a ADC0_ PTE19 SPI0_ UART2 I2C0_S SE7a SIN _RTS_ CL b 21 USB0_ DP USB0_DP USB0_ DP 22 USB0_ DM USB0_DM USB0_ DM 23 VOUT3 3 VOUT33 VOUT3 3 24 VREGI N VREGIN VREGI N PTE4/ SPI1_ LLWU_ PCS0 P2 25 25 VDDA VDDA VDDA 26 26 VREFH VREFH VREF H 27 27 VREFL VREFL VREFL 28 28 VSSA VSSA VSSA 29 29 TAMPE TAMPER0/ TAMP R0/ RTC_WAKEUP_B ER0/ RTC_ RTC_ WAKE WAKE UP_B UP_B 30 30 XTAL3 2 XTAL32 XTAL3 2 31 31 EXTAL 32 EXTAL32 EXTAL 32 32 32 VBAT_ MCU VBAT_MCU VBAT_ MCU ALT7 EZPO RT SPI1_ SOUT TRAC E_D0 Table continues on the next page... 74 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Pin diagrams and pin assignments Table 48. Pin Assignments (continued) MKW MKW 22/24 21D25 D512 6/512 (USB) Pin Name Default ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EZPO RT 33 33 PTA0 JTAG_TCLK/ SWD_CLK/ EZP_CLK PTA0 UART0 FTM0_ _CTS_ CH5 b/ UART0 _COL_ b JTAG_ EZP_C TCLK/ LK SWD_ CLK 34 34 PTA1 JTAG_TDI/ EZP_DI PTA1 UART0 FTM0_ _RX CH6 JTAG_ EZP_D TDI I 35 35 PTA2 JTAG_TDO/ TRACE_SWO/ EZP_DO PTA2 UART0 FTM0_ _TX CH7 JTAG_ EZP_D TDO/ O TRAC E_SW O 36 36 PTA3 JTAG_TMS/ SWD_DIO PTA3 UART0 FTM0_ _RTS_ CH0 b JTAG_ TMS/ SWD_ DIO 37 37 PTA4/ NMI_b/EZP_CS_b LLWU_ P3 38 38 VDD2_ MCU VDD 39 39 PTA18 EXTAL0 EXTAL PTA18 0 FTM0_ FTM_C FLT2 LKIN0 40 40 PTA19 XTAL0 XTAL0 PTA19 FTM1_ FTM_C FLT0 LKIN1 41 41 RESET _b RESET_b 42 42 VBAT2 _RF VBAT2_RF 431 431 VDD_R EGD VDD_REGD 44 44 ANT_A ANT_A 45 45 ANT_B ANT_B 46 46 RX_S WITCH RX_SWITCH 47 47 TX_SW ITCH TX_SWITCH 48 48 GND_P A VSSA_PA 49 49 RF_OU TP RF_OUTP PTA4/ LLWU_ P3 FTM0_ CH1 NMI_b EZP_C S_b VDD LPTM R0_AL T1 RESET _b Table continues on the next page... MKW2xD Data Sheet, Rev. 2, 05/2016 75 NXP Semiconductors Dimensions Table 48. Pin Assignments (continued) MKW MKW 22/24 21D25 D512 6/512 (USB) Pin Name Default 50 50 RF_OU TN RF_OUTN 51 51 GND_P A VSSA_PA 521 521 VDD_P A VDD_PA 531 531 VDD_I F VDD_IF 541 541 VDD_R F VDD_RF 55 55 VBAT_ RF VBAT 56 56 XTAL_ 32M XTAL_32M 57 57 Factory test Do not connect 58 58 Factory test Do not connect 59 59 Factory test Do not connect 60 60 Factory test Do not connect 61 61 Factory test Do not connect 62 62 Factory test Do not connect 63 63 GND_P Connect to ground A ALT0 ALT1 ALT2 ALT3 ALT4 ALT5 ALT6 ALT7 EZPO RT 1. This pin is used for external bypassing of an internal regulator. DO NOT connect to power. 11 Dimensions 11.1 Obtaining package dimensions Package dimensions are provided in package drawings. To find a package drawing, go to nxp.com and perform a keyword search for the drawing's document number: 76 NXP Semiconductors MKW2xD Data Sheet, Rev. 2, 05/2016 Revision History If you want the drawing for this package 63 MAPLGA Then use this document number 98ASA00393D 12 Revision History The following table provides a revision history for this document. Table 49. Revision History Rev. No. Date 2 05/2016 MKW2xD Data Sheet, Rev. 2, 05/2016 Substantial Changes * Updated features list and added pin package diagram on front page. * Added Related Resources table. * Updated structure of section 4 and added section 4.5 "RF Output Power Distribution". * Added section 5.1 "Transceiver Transmit Current Distribution". * Updated pin diagrams with correct pin assignments. * Replaced MKW2x with MKW2xD through out. 77 NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. 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