2N6547 - MULTICOMP - Datasheet.Live

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SwitchmodeTM series NPN silicon power transistors.

The 2N6547 transistor is designed for high-voltage, high-speed, power switching in

inductive circuits where fall time is critical. They are particularly suited for 115 and 220

volts line operated switch-mode applications.

Features:

•High temperature performance specified for:

Reversed biased SOA with inductive loads.

Switching time with inductive loads.

Saturation voltages.

Leakage currents.

TO-204 (TO-3)

Style 1:

Pin 1. Base

2. Emitter

Collector (Case)

15 Ampere

NPN Silicon

Power Transistors

300 and 400 Volts

175 Watts

TO-3

Case 1-07

Dimensions Minimum Maximum

A1.550 (39.37) Reference

B - 1.050 (26.67)

C 0.250 (6.35) 0.335 (8.51)

D0.038 (0.97) 0.043 (1.09)

E0.055 (1.40) 0.070 (1.77)

G0.430 (10.92) BSC

H0.215 (5.46) BSC

K0.440 (11.18) 0.480 (12.19)

L0.665 (16.89) BSC

N - 0.830 (21.08)

Q0.151 (3.84) 0.165 (4.19)

U1.187 (30.15) BSC

V0.131 (3.33) 0.188 (4.77)

Dimensions : Inches (Millimetres)

Applications:

Switching regulators.

PWM inverters and motor controls.

Solenoid and relay drivers.

Deflection circuits.

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Rating Symbol Value Unit

Collector-Emitter Voltage VCEO (SUS) 400

V dc

Collector-Emitter Voltage VCEX (SUS) 450

Collector-Emitter Voltage VCEV 850

Emitter-Base Voltage VEB 9.0

Collector Current - Continuous

- Peak (2)

ICM

Adc

Base Current - Continuous

- Peak (2)

IBM

Emitter Current - Continuous

- Peak (2)

IEM

Total Power Dissipation

at TC= 25°C

at TC= 100°C

Derate above 25°C

175

100

1.0

W/°C

Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C

Maximum Ratings (1)

Characteristics Symbol Maximum Unit

Thermal Resistance, Junction-to-Case RθJC 1.0 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8 Inches

from Case for 5 Seconds TL275 °C

Thermal Characteristics

*Electrical Characteristics (TC= 25°C unless otherwise noted)

Characteristic Symbol Minimum Maximum Unit

Off Characteristics (1)

Collector-Emitter Sustaining Voltage

(lC = 100mA, lB= 0) 2N6547 VEO (sus) 400 -

V dc

Collector-Emitter Sustaining Voltage

(IC= 8A, Vclamp = Rated VCEX, TC= 100°C) 2N6547

(IC= 15A, Vclamp = Rated VCEO = 100V,

TC= 100°C) 2N6547

VCEX (sus)

450

300

Collector Cut off Current

(VCEV = Rated Value, VBE (off) = 1.5V dc)

(VCEV = Rated Value, VBE (off) = 1.5V dc, TC= 100°C)

ICEV - 1.0

4.0

mA dc

Collector Cut off Current

(VCE = Rated VCEV, RBE, = 50Ω, TC= 100°C) ICER - 5.0

Emitter Cut off Current

(VEB = 9.0V dc, IC= 0) IERO - 1.0

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Electrical Characteristics (TC= 25°C unless otherwise noted)

Characteristic Symbol Minimum Maximum Unit

Second Breakdown

Second Breakdown Collector Current with Base Forward Biased

t = 1.0s (Non-repetitive) (VCE = 100V dc) IS/b 0.2 - Adc

On Characteristic (1)

DC Current Gain

(lC= 5.0A dc, VCE = 2.0V dc)

(lC= 10A dc, VCE = 2.0V dc)

hFE 12

6.0

Collector-Emitter Saturation Voltage

(lC= 10A dc, IB= 2.0A dc)

(lC= 15A dc, IB= 3.0A dc)

(lC= 10A dc, IB= 2.0A dc, TC= 100°C)

VCE (sat) -1.5

5.0

2.5 V dc

Base-Emitter Saturation Voltage

(lC= 10A dc, IB= 2.0A dc)

(lC= 10A dc, IB= 2.0A dc, TC= 100°C

VBE (sat) - 1.6

Dynamic Characteristics

Current-Gain-Bandwidth Product

(lC= 500mA dc, VCE = 10V dc, ftest = 1.0MHz) fT6.0 28 MHz

Output Capacitance

(VCB = 10V dc, IE= 0, ftest = 1.0MHz) Cob 125 500 pF

Resistive Load

Delay Time

(VCC = 250V, IC= 10A,

IB1 = IB2 = 2.0A, tp= 100µS,

Duty Cycle ≤2.0%

td- 0.05

µs

Rise Time tr- 1.0

Storage Time ts- 4.0

Fall Time tf- 0.7

Inductive Load, Clamped

Storage Time (IC= 10A (pk), Vclamp = Rated VCEX, IB1 = 2.0A,

VBE (off) = 5.0V dc, TC= 100°C)

ts- 5.0

µs

Fall Time tf- 1.5

Storage Time (IC= 10A (pk), Vclamp = Rated VCEX, IB1 = 2.0A,

VBE (off) = 5.0V dc, TC= 25°C)

tsTypical 2.0

µs

Fall Time tfTypical 0.09

Switching Characteristics

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

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DC Current Gain

IC, Collector Current (Amperes)

hFE, DC Current Gain

Collector Saturation Region

VCE, Collector-Emitter Voltage (Volts)

IB, Collector Current (Amperes)

“On” Voltages

IC, Collector Current (Amperes)

V, Voltage (Volts)

Temperature Coefficients

θθV, Temperature Coefficients (mV/°C)

IC, Collector Current (Amperes)

Turn-On Time

IC, Collector Current (Amperes)

t, Time (ns)

Turn-Off Time

t, Time (ns)

IC, Collector Current (Amperes)

Typical Electrical Characteristics

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Forward Bias Safe Operating Area

VCE, Collector-Emitter Voltage (Volts)

IC, Collector Current (Amperes)

Reverse Bias Safe Operating Area

IC, Collector Current (Amperes)

VCE, Collector-Emitter Voltage (Volts)

Power Derating

TC, Case Temperature (°C)

Power Derating Factor (%)

Thermal Response

t, Time (ms)

r(t), Transient Thermal Resistance

(Normalized)

Maximum Rated Safe Operating Areas

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC– VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data is based on TC= 25°C; TJ (pk) is variable depending on

power level. Second breakdown pulse limits are valid for duty

cycles to 10% but must be derated when TC ≥25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown may be

found at any case temperature by using the appropriate curve.

TJ (pk) may be calculated from the data. At high case

temperatures, thermal limitations will reduce the power that can

be handled to values less than the limitations imposed by

second breakdown.

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Part Number Table

Description Part Number

Transistor, NPN, TO-3 2N6547

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