SOWIE Bo[MOS FET ['Rres2.633 FIELD EFFECT POWER TRANSISTOR 8.0 AMPERES 200, 150 VOLTS RDS(ON) = 0.6 2 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- \ ness and reliability. ia This design has been optimized to give superior performance G in most switching applications including: switching power s supplies, inverters, converters and solenoid/relay drivers. omega ake ments DLLME as) Also, the extended safe operating area with good linear 2H seovaan transfer characteristics makes it well suited for many linear fr seneest y Oe TIO aor 2561.38 applications such as audio amplifiers and servo motors. ; = Oa aata| A Features | : | f TEMPERATURE cae age . eye POINT Polysilicon gate Improved stability and reliability an + sep00 No secondary breakdown Excellent ruggedness | ya fn oo. .190(3.3) -4 be 9061015 e Ultra-fast switching Independent of temperature A i Fr sOne.ge8) TERM.1 Voltage controlled High transconductance TERM? BOOCa TIMIN. e Low input capacitance Reduced drive requirement TERM3~ | _ a . 033(0.84) . 67) pl be - e Excellent thermal stability Ease of paralleling 0 780) Paes 4 Mena 9581.99) a] c 21016.98 2110.53) UNIT TYPE jTERM.NTERM.2) TERMS TAB POWER MOS FET |T0-220-A8] GATE |ORAIN|SOURCE| DAAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF632 IRF633 UNITS Drain-Source Voltage Vpss 200 150 Volts Drain-Gate Voltage, Res = 1MO VpoGR 200 150 Volts Continuous Drain Current @ To = 25C ID 8.0 8.0 A To = 100C 5.0 5.0 A Pulsed Drain Current IDM 32 32 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 7 Watts Derate Above 25C 0.6 0.6 wc Operating and Storage Junction Temperature Range Ty, TstG ~55 to 150 -56 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Raja 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 199electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF632 BVpss 200 _ _ Volts (Vag = OV, ID = 250 uA) {RF633 150 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Ves = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, 0.8, V@g = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | VesctH) 2.0 _ 4.0 Volts (Vps = Vas; Ip = 250 pA) On-State Drain Current | 8.0 _ _ A (Vag = 10V, Vpg = 10V) D(ON) " Static Drain-Source On-State Resistance (Vas = 10V, Ip = 5.0A) Rps(ONn) _ 0.4 0.6 Ohms Forward Transconductance (Vps = 10V, Ip = 5.0A) Ofs 2.4 3.0 _ mhos dynamic characteristics Input Capacitance Ves = 0V Ciss _ 650 800 pF Output Capacitance Vps = 25V Coss _ 150 450 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 30 150 pF switching characteristics Turn-on Delay Time Vos = 90V ta(on) _ 15 _ ns Rise Time Ip = 5.0A, Vas = 15V tr _ 25 _ ns Turn-off Delay Time Reen = 500, Reg = 12.50 | taoff) _ 30 _ ns Fall Time (Res (EQuiv.) = 100) tt _ 20 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 8.0 A Pulsed Source Current Ism _ _ 32 A Diode Forward Voltage _ (To = 25C, Vas = OV, Ig = 8.0A) Vsp 1.0 18 Volts Reverse Recovery Time ter _ 300 _ ns (Ig = 9.0A, dig/dt = 100A/yusec, To = 125C) Qrar _ 2.5 _ uG *Pulse Test: Pulse width <= 300 us, duty cycle = 2% 100 80 60 40 20 10 8 6 4 2 IN THIS AREA Y LIMITED BY R 1.0 08 a6 0.4 Ip. ORAIN CURRENT (AMPERES) 0.2 0.1 1 2 4 6 810 20 40 6080100 200 Vos: DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 200 CONDITIONS: RDg(ON) CONDITIONS: Ip = 5.0 A, Vgg = 10V V@g(TH) CONDITIONS: Ip = 2504A, Vpg = Veg GS(TH} Rosion) AND Vegi) NORMALIZED -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rosjon) AND Vesiru) VS. TEMP.