DATA SHEET MOS INTEGRATED CIRCUIT PD29F032203AL-Y 32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) Description The PD29F032203AL-Y is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words x 8 bits) and WORD mode (2,097,152 words x 16 bits), are selectable so that the memory can be programmed in byte or word units. The PD29F032203AL-Y can be read while its contents are being erased or programmed. The memory cell is divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other bank thanks to the simultaneous execution architecture. The banks are 8M bits and 24M bits. This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the B type has a boot sector at the lowest address (sector). Because the PD29F032203AL-Y enables the boot sector to be erased, it is ideal for storing a boot program. In addition, program code that controls the flash memory can be also stored, and the program code can be programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided, each of which can be erased in 8K bytes units. Once a program or erase command sequence has been executed, an automatic program or automatic erase function internally executes program or erase and verification automatically. Because the PD29F032203AL-Y can be electrically erased or programmed by writing an instruction, data can be reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of applications. This flash memory is packed in a 48-pin PLASTIC TSOP(I) and 63-pin TAPE FBGA. Features * Two bank organization enabling simultaneous execution of program / erase and read * Bank organization: 2 banks (8M bits + 24M bits) * Memory organization : 4,194,304 words x 8 bits (BYTE mode) 2,097,152 words x 16 bits (WORD mode) * Sector organization : 71 sectors (8K bytes / 4K words x 8 sectors, 64K bytes / 32K words x 63 sectors) * 2 types of sector organization * T type : Boot sector allocated to the highest address (sector) * B type : Boot sector allocated to the lowest address (sector) * 3-state output * Automatic program * Program suspend / resume The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M15504EJ5V0DS00 (5th edition) Date Published September 2002 NS CP (K) Printed in Japan The mark shows major revised points. (c) 2001 PD29F032203AL-Y * Unlock bypass program * Automatic erase * Chip erase * Sector erase (sectors can be combined freely) * Erase suspend / resume * Program / Erase completion detection * Detection through data polling and toggle bits * Detection through RY (/BY) pin * Sector group protection * Any sector group can be protected * Any protected sector group can be temporary unprotected * Sectors can be used for boot application * Hardware reset and standby using /RESET pin * Automatic sleep mode * Boot block sector protect by /WP (ACC) pin * Conforms to common flash memory interface (CFI) * Extra One Time Protect Sector provided PD29F032203AL Access time ns (MAX.) -A85TY, -A85BY Operating supply voltage V 85 3.0 to 3.6 -B85TY, -B85BY 2.7 to 3.3 * Operating ambient temperature: -40 to +85C * Program / erase time * Program: 9.0 s / byte (TYP.) 11.0 s / word (TYP.) * Sector erase : Program / erase cycle : 100,000 cycles 0.3 s (TYP.) (4K words sector), 0.5 s (TYP.) (32K words sector) Program / erase cycle : 300,000 cycles 0.5 s (TYP.) (4K words sector), 0.7 s (TYP.) (32K words sector) * Program / erase cycle : 300,000 cycles (MIN.) 2 Data Sheet M15504EJ5V0DS Power supply current (Active mode) mA (MAX.) Read Program / Erase 16 30 Standby current A (MAX.) 5 PD29F032203AL-Y Ordering Information Part number Access time Operating ns (MAX.) supply voltage Boot sector Package V PD29F032203ALGZ-A85TY-MJH 85 3.0 to 3.6 Top address (sector) (T type) 48-pin PLASTIC TSOP (I) (12 x 20) (Normal bent) Bottom address (sector) PD29F032203ALGZ-A85BY-MJH (B type) PD29F032203ALF9-A85TY-BS2 Top address (sector) 63-pin TAPE FBGA (11 x 7) (T type) Bottom address (sector) PD29F032203ALF9-A85BY-BS2 (B type) PD29F032203ALGZ-B85TY-MJH 2.7 to 3.3 Top address (sector) (T type) PD29F032203ALGZ-B85BY-MJH 48-pin PLASTIC TSOP (I) (12 x 20) (Normal bent) Bottom address (sector) (B type) PD29F032203ALF9-B85TY-BS2 Top address (sector) PD29F032203ALF9-B85BY-BS2 Bottom address (sector) 63-pin TAPE FBGA (11 x 7) (T type) (B type) Remark For address organization of sectors, see section Sector Organization / Sector Address Table. Data Sheet M15504EJ5V0DS 3 PD29F032203AL-Y Pin Configurations /xxx indicates active low signal. 48-pin PLASTIC TSOP (I) (12 x 20) (Normal bent) [ PD29F032203ALGZ-A85TY-MJH ] [ PD29F032203ALGZ-A85BY-MJH ] [ PD29F032203ALGZ-B85TY-MJH ] [ PD29F032203ALGZ-B85BY-MJH ] Marking Side A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 /WE /RESET NC /WP (ACC) RY (/BY) A18 A17 A7 A6 A5 A4 A3 A2 A1 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A0 to A20 : Address inputs I/O0 to I/O14 : Data Inputs / Outputs I/O15, A-1 : Data 15 Input / output (WORD mode) LSB address input (BYTE mode) /CE : Chip Enable /WE : Write Enable /OE : Output Enable /BYTE : Mode select /RESET : Hardware reset input RY (/BY) : Ready (Busy) output /WP (ACC) : Write Protect (Accelerated) input VCC : Supply Voltage GND : Ground NC Note : No Connection Note Some signals can be applied because this pin is not connected to the inside of the chip. Remark Refer to Package Drawings for the 1-pin index mark. 4 Data Sheet M15504EJ5V0DS A16 /BYTE GND I/O15, A-1 I/O7 I/O14 I/O6 I/O13 I/O5 I/O12 I/O4 VCC I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 I/O8 I/O0 /OE GND /CE A0 PD29F032203AL-Y 63-pin TAPE FBGA (11 x 7) [ PD29F032203ALF9-A85TY-BS2] [ PD29F032203ALF9-A85BY-BS2] [ PD29F032203ALF9-B85TY-BS2] [ PD29F032203ALF9-B85BY-BS2] Top View Bottom View Top View Bottom View 8 7 6 5 4 3 2 1 A B C D E F G H J K L M A B C D E F G H 8 7 A B NC NC 8 NC 7 NC 6 6 5 5 4 4 3 2 1 C 3 NC NC 2 NC 1 D E A B A15 A12 A13 A11 A12 A8 A9 A8 A19 /RESET /WE CE2s /WE RY(/BY) /WP(ACC) /WP(ACC) /RESET A7 A17 /LB /UB A4 A3 A7 A6 A3 A0 to A20 M L K J H G F E D C B A Top View H G F E D C B A FTop View G C NC A14 A13 A10 A9 NC A20 A18 RY(/BY) A6 A18 A2 A5 A2 D H E NC A15 A14 A11 A10 A19 A16 A16 SA I/O7 I/O6 I/O5 A20 I/O2 A5 A17 A1 A4 I/O0 I/O1 A0 VSS A1 J F K G CIOf VSS /BYTE I/O15,A-1 I/O15, A-1 I/O7 I/O14 I/O13 I/O12 I/O13 I/O12 VCC I/O4 VCCs I/O10 I/O11 I/O3 VCCf I/O9 I/O8 I/O9 I/O10 /OE /CE /OE I/O0 A0 /CEf H GND I/O14 I/O6 I/O5 I/O4 CIOs I/O3 I/O11 I/O1 I/O2 GND I/O8 L M NC NC NC NC NC NC NC NC /CE1s : Address inputs I/O0 to I/O14 : Data Inputs / Outputs I/O15, A-1 : Data 15 Input / output (WORD mode) LSB address input (BYTE mode) /CE : Chip Enable /WE : Write Enable /OE : Output Enable /BYTE : Mode select /RESET : Hardware reset input RY (/BY) : Ready (Busy) output /WP (ACC) : Write Protect (Accelerated) input VCC : Supply Voltage GND NC Note : Ground : No Connection Note Some signals can be applied because this pin is not connected to the inside of the chip. Remark Refer to Package Drawings for the index mark. INPUT / OUTPUT PIN FUNCTION Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). Data Sheet M15504EJ5V0DS 5 PD29F032203AL-Y Block Diagram A0 to A20 Address buffers Bank 2 address Address latch VCC GND X-decoder Cell matrix (Bank 2) Y-decoder Y-gating Bank / Sector decoder I/O0 to I/O15, A-1 /WP(ACC) SA / WC Program / Erase voltage generator /RESET /WE /BYTE /CE /OE State control (Command register) Data latch SA / WC Bank 1 address 6 Address latch RY (/BY) Y-decoder Y-gating X-decoder Cell matrix (Bank 1) Data Sheet M15504EJ5V0DS Input / Output buffers PD29F032203AL-Y Sector Organization / Sector Address Table [ -A85TY, -B85TY ] (1/2) Bank Sector Organization K bytes / K words Bank 1 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Bank 2 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Sectors Address BYTE mode WORD mode 3FFFFFH 3FE000H 3FDFFFH 3FC000H 3FBFFFH 3FA000H 3F9FFFH 3F8000H 3F7FFFH 3F6000H 3F5FFFH 3F4000H 3F3FFFH 3F2000H 3F1FFFH 3F0000H 3EFFFFH 3E0000H 3DFFFFH 3D0000H 3CFFFFH 3C0000H 3BFFFFH 3B0000H 3AFFFFH 3A0000H 39FFFFH 390000H 38FFFFH 380000H 37FFFFH 370000H 36FFFFH 360000H 35FFFFH 350000H 34FFFFH 340000H 33FFFFH 330000H 32FFFFH 320000H 31FFFFH 310000H 30FFFFH 300000H 2FFFFFH 2F0000H 2EFFFFH 2E0000H 2DFFFFH 2D0000H 2CFFFFH 2C0000H 2BFFFFH 2B0000H 2AFFFFH 2A0000H 29FFFFH 290000H 28FFFFH 280000H 27FFFFH 270000H 26FFFFH 260000H 25FFFFH 250000H 24FFFFH 240000H 23FFFFH 230000H 1FFFFFH 1FF000H 1FEFFFH 1FE000H 1FDFFFH 1FD000H 1FCFFFH 1FC000H 1FBFFFH 1FB000H 1FAFFFH 1FA000H 1F9FFFH 1F9000H 1F8FFFH 1F8000H 1F7FFFH 1F0000H 1EFFFFH 1E8000H 1E7FFFH 1E0000H 1DFFFFH 1D8000H 1D7FFFH 1D0000H 1CFFFFH 1C8000H 1C7FFFH 1C0000H 1BFFFFH 1B8000H 1B7FFFH 1B0000H 1AFFFFH 1A8000H 1A7FFFH 1A0000H 19FFFFH 198000H 197FFFH 190000H 18FFFFH 188000H 187FFFH 180000H 17FFFFH 178000H 177FFFH 170000H 16FFFFH 168000H 167FFFH 160000H 15FFFFH 158000H 157FFFH 150000H 14FFFFH 148000H 147FFFH 140000H 13FFFFH 138000H 137FFFH 130000H 12FFFFH 128000H 127FFFH 120000H 11FFFFH 118000H A20 Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14 A13 A12 FSA70 1 1 1 1 1 1 1 1 1 FSA69 1 1 1 1 1 1 1 1 0 FSA68 1 1 1 1 1 1 1 0 1 FSA67 1 1 1 1 1 1 1 0 0 FSA66 1 1 1 1 1 1 0 1 1 FSA65 1 1 1 1 1 1 0 1 0 FSA64 1 1 1 1 1 1 0 0 1 FSA63 1 1 1 1 1 1 0 0 0 FSA62 1 1 1 1 1 0 x x x FSA61 1 1 1 1 0 1 x x x FSA60 1 1 1 1 0 0 x x x FSA59 1 1 1 0 1 1 x x x FSA58 1 1 1 0 1 0 x x x FSA57 1 1 1 0 0 1 x x x FSA56 1 1 1 0 0 0 x x x FSA55 1 1 0 1 1 1 x x x FSA54 1 1 0 1 1 0 x x x FSA53 1 1 0 1 0 1 x x x FSA52 1 1 0 1 0 0 x x x FSA51 1 1 0 0 1 1 x x x FSA50 1 1 0 0 1 0 x x x FSA49 1 1 0 0 0 1 x x x FSA48 1 1 0 0 0 0 x x x FSA47 1 0 1 1 1 1 x x x FSA46 1 0 1 1 1 0 x x x FSA45 1 0 1 1 0 1 x x x FSA44 1 0 1 1 0 0 x x x FSA43 1 0 1 0 1 1 x x x FSA42 1 0 1 0 1 0 x x x FSA41 1 0 1 0 0 1 x x x FSA40 1 0 1 0 0 0 x x x FSA39 1 0 0 1 1 1 x x x FSA38 1 0 0 1 1 0 x x x FSA37 1 0 0 1 0 1 x x x FSA36 1 0 0 1 0 0 x x x FSA35 1 0 0 0 1 1 x x x Data Sheet M15504EJ5V0DS 7 PD29F032203AL-Y [ -A85TY, -B85TY ] Bank Sector Organization K bytes / K words Bank 2 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8 (2/2) Address Sectors Address BYTE mode WORD mode 22FFFFH 220000H 21FFFFH 210000H 20FFFFH 200000H 1FFFFFH 1F0000H 1EFFFFH 1E0000H 1DFFFFH 1D0000H 1CFFFFH 1C0000H 1BFFFFH 1B0000H 1AFFFFH 1A0000H 19FFFFH 190000H 18FFFFH 180000H 17FFFFH 170000H 16FFFFH 160000H 15FFFFH 150000H 14FFFFH 140000H 13FFFFH 130000H 12FFFFH 120000H 11FFFFH 110000H 10FFFFH 100000H 0FFFFFH 0F0000H 0EFFFFH 0E0000H 0DFFFFH 0D0000H 0CFFFFH 0C0000H 0BFFFFH 0B0000H 0AFFFFH 0A0000H 09FFFFH 090000H 08FFFFH 080000H 07FFFFH 070000H 06FFFFH 060000H 05FFFFH 050000H 04FFFFH 040000H 03FFFFH 030000H 02FFFFH 020000H 01FFFFH 010000H 00FFFFH 000000H 117FFFH 110000H 10FFFFH 108000H 107FFFH 100000H 0FFFFFH 0F8000H 0F7FFFH 0F0000H 0EFFFFH 0E8000H 0E7FFFH 0E0000H 0DFFFFH 0D8000H 0D7FFFH 0D0000H 0CFFFFH 0C8000H 0C7FFFH 0C0000H 0BFFFFH 0B8000H 0B7FFFH 0B0000H 0AFFFFH 0A8000H 0A7FFFH 0A0000H 09FFFFH 098000H 097FFFH 090000H 08FFFFH 088000H 087FFFH 080000H 07FFFFH 078000H 077FFFH 070000H 06FFFFH 068000H 067FFFH 060000H 05FFFFH 058000H 057FFFH 050000H 04FFFFH 048000H 047FFFH 040000H 03FFFFH 038000H 037FFFH 030000H 02FFFFH 028000H 027FFFH 020000H 01FFFFH 018000H 017FFFH 010000H 00FFFFH 008000H 007FFFH 000000H A20 Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14 A13 A12 FSA34 1 0 0 0 1 0 x x x FSA33 1 0 0 0 0 1 x x x FSA32 1 0 0 0 0 0 x x x FSA31 0 1 1 1 1 1 x x x FSA30 0 1 1 1 1 0 x x x FSA29 0 1 1 1 0 1 x x x FSA28 0 1 1 1 0 0 x x x FSA27 0 1 1 0 1 1 x x x FSA26 0 1 1 0 1 0 x x x FSA25 0 1 1 0 0 1 x x x FSA24 0 1 1 0 0 0 x x x FSA23 0 1 0 1 1 1 x x x FSA22 0 1 0 1 1 0 x x x FSA21 0 1 0 1 0 1 x x x FSA20 0 1 0 1 0 0 x x x FSA19 0 1 0 0 1 1 x x x FSA18 0 1 0 0 1 0 x x x FSA17 0 1 0 0 0 1 x x x FSA16 0 1 0 0 0 0 x x x FSA15 0 0 1 1 1 1 x x x FSA14 0 0 1 1 1 0 x x x FSA13 0 0 1 1 0 1 x x x FSA12 0 0 1 1 0 0 x x x FSA11 0 0 1 0 1 1 x x x FSA10 0 0 1 0 1 0 x x x FSA9 0 0 1 0 0 1 x x x FSA8 0 0 1 0 0 0 x x x FSA7 0 0 0 1 1 1 x x x FSA6 0 0 0 1 1 0 x x x FSA5 0 0 0 1 0 1 x x x FSA4 0 0 0 1 0 0 x x x FSA3 0 0 0 0 1 1 x x x FSA2 0 0 0 0 1 0 x x x FSA1 0 0 0 0 0 1 x x x FSA0 0 0 0 0 0 0 x x x Data Sheet M15504EJ5V0DS PD29F032203AL-Y [ -A85BY, -B85BY ] Bank Sector Organization K bytes / K words Bank 2 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (1/2) Address Sectors Address BYTE mode WORD mode 3FFFFFH 3F0000H 3EFFFFH 3E0000H 3DFFFFH 3D0000H 3CFFFFH 3C0000H 3BFFFFH 3B0000H 3AFFFFH 3A0000H 39FFFFH 390000H 38FFFFH 380000H 37FFFFH 370000H 36FFFFH 360000H 35FFFFH 350000H 34FFFFH 340000H 33FFFFH 330000H 32FFFFH 320000H 31FFFFH 310000H 30FFFFH 300000H 2FFFFFH 2F0000H 2EFFFFH 2E0000H 2DFFFFH 2D0000H 2CFFFFH 2C0000H 2BFFFFH 2B0000H 2AFFFFH 2A0000H 29FFFFH 290000H 28FFFFH 280000H 27FFFFH 270000H 26FFFFH 260000H 25FFFFH 250000H 24FFFFH 240000H 23FFFFH 230000H 22FFFFH 220000H 21FFFFH 210000H 20FFFFH 200000H 1FFFFFH 1F0000H 1EFFFFH 1E0000H 1DFFFFH 1D0000H 1CFFFFH 1C0000H 1FFFFFH 1F8000H 1F7FFFH 1F0000H 1EFFFFH 1E8000H 1E7FFFH 1E0000H 1DFFFFH 1D8000H 1D7FFFH 1D0000H 1CFFFFH 1C8000H 1C7FFFH 1C0000H 1BFFFFH 1B8000H 1B7FFFH 1B0000H 1AFFFFH 1A8000H 1A7FFFH 1A0000H 19FFFFH 198000H 197FFFH 190000H 18FFFFH 188000H 187FFFH 180000H 17FFFFH 178000H 177FFFH 170000H 16FFFFH 168000H 167FFFH 160000H 15FFFFH 158000H 157FFFH 150000H 14FFFFH 148000H 147FFFH 140000H 13FFFFH 138000H 137FFFH 130000H 12FFFFH 128000H 127FFFH 120000H 11FFFFH 118000H 117FFFH 110000H 10FFFFH 108000H 107FFFH 100000H 0FFFFFH 0F8000H 0F7FFFH 0F0000H 0EFFFFH 0E8000H 0E7FFFH 0E0000H A20 Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14 A13 A12 FSA70 1 1 1 1 1 1 x x x FSA69 1 1 1 1 1 0 x x x FSA68 1 1 1 1 0 1 x x x FSA67 1 1 1 1 0 0 x x x FSA66 1 1 1 0 1 1 x x x FSA65 1 1 1 0 1 0 x x x FSA64 1 1 1 0 0 1 x x x FSA63 1 1 1 0 0 0 x x x FSA62 1 1 0 1 1 1 x x x FSA61 1 1 0 1 1 0 x x x FSA60 1 1 0 1 0 1 x x x FSA59 1 1 0 1 0 0 x x x FSA58 1 1 0 0 1 1 x x x FSA57 1 1 0 0 1 0 x x x FSA56 1 1 0 0 0 1 x x x FSA55 1 1 0 0 0 0 x x x FSA54 1 0 1 1 1 1 x x x FSA53 1 0 1 1 1 0 x x x FSA52 1 0 1 1 0 1 x x x FSA51 1 0 1 1 0 0 x x x FSA50 1 0 1 0 1 1 x x x FSA49 1 0 1 0 1 0 x x x FSA48 1 0 1 0 0 1 x x x FSA47 1 0 1 0 0 0 x x x FSA46 1 0 0 1 1 1 x x x FSA45 1 0 0 1 1 0 x x x FSA44 1 0 0 1 0 1 x x x FSA43 1 0 0 1 0 0 x x x FSA42 1 0 0 0 1 1 x x x FSA41 1 0 0 0 1 0 x x x FSA40 1 0 0 0 0 1 x x x FSA39 1 0 0 0 0 0 x x x FSA38 0 1 1 1 1 1 x x x FSA37 0 1 1 1 1 0 x x x FSA36 0 1 1 1 0 1 x x x FSA35 0 1 1 1 0 0 x x x Data Sheet M15504EJ5V0DS 9 PD29F032203AL-Y [ -A85BY, -B85BY ] Bank Sector Organization K bytes / K words Bank 2 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Bank 1 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 8/4 8/4 8/4 8/4 8/4 8/4 8/4 8/4 10 (2/2) Address Sectors Address BYTE mode WORD mode 1BFFFFH 1B0000H 1AFFFFH 1A0000H 19FFFFH 190000H 18FFFFH 180000H 17FFFFH 170000H 16FFFFH 160000H 15FFFFH 150000H 14FFFFH 140000H 13FFFFH 130000H 12FFFFH 120000H 11FFFFH 110000H 10FFFFH 100000H 0FFFFFH 0F0000H 0EFFFFH 0E0000H 0DFFFFH 0D0000H 0CFFFFH 0C0000H 0BFFFFH 0B0000H 0AFFFFH 0A0000H 09FFFFH 090000H 08FFFFH 080000H 07FFFFH 070000H 06FFFFH 060000H 05FFFFH 050000H 04FFFFH 040000H 03FFFFH 030000H 02FFFFH 020000H 01FFFFH 010000H 00FFFFH 00E000H 00DFFFH 00C000H 00BFFFH 00A000H 009FFFH 008000H 007FFFH 006000H 005FFFH 004000H 003FFFH 002000H 001FFFH 000000H 0DFFFFH 0D8000H 0D7FFFH 0D0000H 0CFFFFH 0C8000H 0C7FFFH 0C0000H 0BFFFFH 0B8000H 0B7FFFH 0B0000H 0AFFFFH 0A8000H 0A7FFFH 0A0000H 09FFFFH 098000H 097FFFH 090000H 08FFFFH 088000H 087FFFH 080000H 07FFFFH 078000H 077FFFH 070000H 06FFFFH 068000H 067FFFH 060000H 05FFFFH 058000H 057FFFH 050000H 04FFFFH 048000H 047FFFH 040000H 03FFFFH 038000H 037FFFH 030000H 02FFFFH 028000H 027FFFH 020000H 01FFFFH 018000H 017FFFH 010000H 00FFFFH 008000H 007FFFH 007000H 006FFFH 006000H 005FFFH 005000H 004FFFH 004000H 003FFFH 003000H 002FFFH 002000H 001FFFH 001000H 000FFFH 000000H A20 Sector Address Table Bank Address Table A19 A18 A17 A16 A15 A14 A13 A12 FSA34 0 1 1 0 1 1 x x x FSA33 0 1 1 0 1 0 x x x FSA32 0 1 1 0 0 1 x x x FSA31 0 1 1 0 0 0 x x x FSA30 0 1 0 1 1 1 x x x FSA29 0 1 0 1 1 0 x x x FSA28 0 1 0 1 0 1 x x x FSA27 0 1 0 1 0 0 x x x FSA26 0 1 0 0 1 1 x x x FSA25 0 1 0 0 1 0 x x x FSA24 0 1 0 0 0 1 x x x FSA23 0 1 0 0 0 0 x x x FSA22 0 0 1 1 1 1 x x x FSA21 0 0 1 1 1 0 x x x FSA20 0 0 1 1 0 1 x x x FSA19 0 0 1 1 0 0 x x x FSA18 0 0 1 0 1 1 x x x FSA17 0 0 1 0 1 0 x x x FSA16 0 0 1 0 0 1 x x x FSA15 0 0 1 0 0 0 x x x FSA14 0 0 0 1 1 1 x x x FSA13 0 0 0 1 1 0 x x x FSA12 0 0 0 1 0 1 x x x FSA11 0 0 0 1 0 0 x x x FSA10 0 0 0 0 1 1 x x x FSA9 0 0 0 0 1 0 x x x FSA8 0 0 0 0 0 1 x x x FSA7 0 0 0 0 0 0 1 1 1 FSA6 0 0 0 0 0 0 1 1 0 FSA5 0 0 0 0 0 0 1 0 1 FSA4 0 0 0 0 0 0 1 0 0 FSA3 0 0 0 0 0 0 0 1 1 FSA2 0 0 0 0 0 0 0 1 0 FSA1 0 0 0 0 0 0 0 0 1 FSA0 0 0 0 0 0 0 0 0 0 Data Sheet M15504EJ5V0DS PD29F032203AL-Y Sector Group Address Table [ -A85TY, -B85TY ] Sector group A20 A19 A18 A17 A16 A15 A14 A13 A12 Size Sector SGA0 0 0 0 0 0 0 x x x 64K Bytes (1 Sector) FSA0 SGA1 0 0 0 0 0 1 x x x 192K Bytes (3 Sectors) FSA1 to FSA3 1 0 1 1 SGA2 0 0 0 1 x x x x x 256K Bytes (4 Sectors) FSA4 to FSA7 SGA3 0 0 1 0 x x x x x 256K Bytes (4 Sectors) FSA8 to FSA11 SGA4 0 0 1 1 x x x x x 256K Bytes (4 Sectors) FSA12 to FSA15 SGA5 0 1 0 0 x x x x x 256K Bytes (4 Sectors) FSA16 to FSA19 SGA6 0 1 0 1 x x x x x 256K Bytes (4 Sectors) FSA20 to FSA23 SGA7 0 1 1 0 x x x x x 256K Bytes (4 Sectors) FSA24 to FSA27 SGA8 0 1 1 1 x x x x x 256K Bytes (4 Sectors) FSA28 to FSA31 SGA9 1 0 0 0 x x x x x 256K Bytes (4 Sectors) FSA32 to FSA35 SGA10 1 0 0 1 x x x x x 256K Bytes (4 Sectors) FSA36 to FSA39 SGA11 1 0 1 0 x x x x x 256K Bytes (4 Sectors) FSA40 to FSA43 SGA12 1 0 1 1 x x x x x 256K Bytes (4 Sectors) FSA44 to FSA47 SGA13 1 1 0 0 x x x x x 256K Bytes (4 Sectors) FSA48 to FSA51 SGA14 1 1 0 1 x x x x x 256K Bytes (4 Sectors) FSA52 to FSA55 SGA15 1 1 1 0 x x x x x 256K Bytes (4 Sectors) FSA56 to FSA59 SGA16 1 1 1 1 0 0 x x x 192K Bytes (3 Sectors) FSA60 to FSA62 0 1 1 0 SGA17 1 1 1 1 1 1 0 0 0 8K Bytes (1 Sector) FSA63 SGA18 1 1 1 1 1 1 0 0 1 8K Bytes (1 Sector) FSA64 SGA19 1 1 1 1 1 1 0 1 0 8K Bytes (1 Sector) FSA65 SGA20 1 1 1 1 1 1 0 1 1 8K Bytes (1 Sector) FSA66 SGA21 1 1 1 1 1 1 1 0 0 8K Bytes (1 Sector) FSA67 SGA22 1 1 1 1 1 1 1 0 1 8K Bytes (1 Sector) FSA68 SGA23 1 1 1 1 1 1 1 1 0 8K Bytes (1 Sector) FSA69 SGA24 1 1 1 1 1 1 1 1 1 8K Bytes (1 Sector) FSA70 Remark x : VIH or VIL Data Sheet M15504EJ5V0DS 11 PD29F032203AL-Y [ -A85BY, -B85BY ] Sector group A20 A19 A18 A17 A16 A15 A14 A13 A12 Size Sector SGA0 0 0 0 0 0 0 0 0 0 8K Bytes (1 Sector) FSA0 SGA1 0 0 0 0 0 0 0 0 1 8K Bytes (1 Sector) FSA1 SGA2 0 0 0 0 0 0 0 1 0 8K Bytes (1 Sector) FSA2 SGA3 0 0 0 0 0 0 0 1 1 8K Bytes (1 Sector) FSA3 SGA4 0 0 0 0 0 0 1 0 0 8K Bytes (1 Sector) FSA4 SGA5 0 0 0 0 0 0 1 0 1 8K Bytes (1 Sector) FSA5 SGA6 0 0 0 0 0 0 1 1 0 8K Bytes (1 Sector) FSA6 SGA7 0 0 0 0 0 0 1 1 1 8K Bytes (1 Sector) FSA7 SGA8 0 0 0 0 0 1 x x x 192K Bytes (3 Sectors) FSA8 to FSA10 1 0 1 1 SGA9 0 0 0 1 x x x x x 256K Bytes (4 Sectors) FSA11 to FSA14 SGA10 0 0 1 0 x x x x x 256K Bytes (4 Sectors) FSA15 to FSA18 SGA11 0 0 1 1 x x x x x 256K Bytes (4 Sectors) FSA19 to FSA22 SGA12 0 1 0 0 x x x x x 256K Bytes (4 Sectors) FSA23 to FSA26 SGA13 0 1 0 1 x x x x x 256K Bytes (4 Sectors) FSA27 to FSA30 SGA14 0 1 1 0 x x x x x 256K Bytes (4 Sectors) FSA31 to FSA34 SGA15 0 1 1 1 x x x x x 256K Bytes (4 Sectors) FSA35 to FSA38 SGA16 1 0 0 0 x x x x x 256K Bytes (4 Sectors) FSA39 to FSA42 SGA17 1 0 0 1 x x x x x 256K Bytes (4 Sectors) FSA43 to FSA46 SGA18 1 0 1 0 x x x x x 256K Bytes (4 Sectors) FSA47 to FSA50 SGA19 1 0 1 1 x x x x x 256K Bytes (4 Sectors) FSA51 to FSA54 SGA20 1 1 0 0 x x x x x 256K Bytes (4 Sectors) FSA55 to FSA58 SGA21 1 1 0 1 x x x x x 256K Bytes (4 Sectors) FSA59 to FSA62 SGA22 1 1 1 0 x x x x x 256K Bytes (4 Sectors) FSA63 to FSA66 SGA23 1 1 1 1 0 0 x x x 192K Bytes (3 Sectors) FSA67 to FSA69 0 1 1 0 1 1 x x x 64K Bytes (1 Sector) FSA70 SGA24 Remark 12 1 1 1 1 x : VIH or VIL Data Sheet M15504EJ5V0DS PD29F032203AL-Y Product ID Code (Manufacturer Code / Device Code) Product ID Code Input A20 to A6 A1 Output A0 A-1 Note1 I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9 I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 HEX A12 Manufacturer Code x VIL VIL VIL VIL 0 0 0 0 1 0 0 0 0 0010H Device BYTE code mode x VIL VIL VIH VIL A-1 High-Z 0 1 0 1 0 0 0 0 50H A-1 High-Z 0 1 0 1 0 0 1 1 53H -A85TY 0 0 0 0 0 0 0 -B85TY -A85BY -B85BY WORD -A85TY mode -B85TY x VIL VIL VIH x -A85BY 0 0 1 0 0 0 1 0 0 1 0 1 0 0 0 0 2250H 0 0 1 0 0 0 1 0 0 1 0 1 0 0 1 1 2253H 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 -B85BY Sector group protection SGA VIL VIH VIL VIL 0001H Notes 1. A-1 is valid only in the BYTE mode. I/O8 to I/O14 go into a high impedance state in the BYTE mode, and I/O15 is A-1 of the lowest address. 2. If 0001H is output, the sector group is protected. If 0000H is output, the sector group is unprotected. Remark x : VIH or VIL, SGA : Sector group address Data Sheet M15504EJ5V0DS 13 Note2 PD29F032203AL-Y Command Sequence Command sequence Bus 1st bus Cycle Cycle Address Read / Reset Note1 Read / Reset Note1 BYTE mode BYTE mode Note 2 Program Resume Note 3 BYTE mode BYTE mode 6th bus Cycle Address Data Address Data Address Data Address Data Address F0H RA RD - - - - - - - - 3 AAAH AAH 555H 55H AAAH F0H RA RD - - - - 4 AAAH 55H AAAH A0H PA PD - - - - - - - - - - - 555H 2AAH AAH 555H BA 555H 555H 2AAH B0H - Data 555H - - 1 BA 30H - - - - - - - - - - 6 AAAH AAH 555H 55H AAAH 80H AAAH AAH 555H 55H AAAH 10H 6 AAAH 55H AAAH 80H AAAH WORD mode Sector Erase 5th bus Cycle Data 1 Chip Erase 4th bus Cycle xxxH WORD mode Program Suspend 3rd bus Cycle 1 WORD mode Program 2nd bus Cycle 555H WORD mode 2AAH AAH 555H 555H 555H 2AAH 555H 555H 2AAH AAH 555H 555H 555H 55H FSA 30H 2AAH Sector Erase Suspend Note 4 1 BA B0H - - - - - - - - - - Sector Erase Resume Note 5 1 BA 30H - - - - - - - - - - 3 AAAH AAH 555H 55H AAAH 20H - - - - - - - - - - - - - - - - - - - - - - (BA) 90H IA ID - - - - Unlock Bypass Set BYTE mode WORD mode Unlock Bypass Program Unlock Bypass Reset Note 6 Note 6 Product ID BYTE mode 555H 2AAH 555H 2 xxxH A0H 2 BA 90H xxxH 00H 3 AAAH AAH 555H PA PD Note11 55H AAAH WORD mode 555H 2AAH (BA) 555H Sector Group Protection Note 7 Sector Group Unprotect Note 8 Query Note 9 BYTE mode 4 xxxH 4 1 WORD mode Extra One Time Protect BYTE mode Sector Entry WORD mode Extra One Time Protect BYTE mode Sector Program Note 10 Extra One Time Protect Sector Erase Note 10 Extra One Time Protect Sector Reset Note 10 Protection 14 SPA 40H SPA SD - - - - xxxH 60H SUA 60H SUA 40H SUA SD - - - - AAH 98H - - - - - - - - - - AAH 555H 55H AAAH 88H - - - - - - 55H AAAH A0H PA PD - - - - 80H AAAH AAH 555H 55H EOTPSA 30H AAAH 4 AAAH 555H 2AAH AAH 555H 6 AAAH 4 AAAH AAH xxxH 555H 555H 555H 55H 2AAH AAH 555H 60H EOTPSA 555H 4 555H 2AAH 555H WORD mode Extra One Time Protect Sector 60H 3 WORD mode BYTE mode SPA 55H WORD mode BYTE mode 60H AAAH 555H 55H AAAH 60H EOTPSA 2AAH 555H 2AAH 90H xxxH 00H - - - - 40H EOTPSA SD - - - - 555H Note 10 Data Sheet M15504EJ5V0DS PD29F032203AL-Y Notes 1. 2. Both these read / reset commands reset the device to the read mode. Programming is suspended if B0H is input to the bank address being programmed to in a program operation. 3. Programming is resumed if 30H is input to the bank address being suspended to in a program-suspend operation. 4. Erasure is suspended if B0H is input to the bank address being erased in a sector erase operation. 5. Erasure is resumed if 30H is input to the bank address being suspended in a sector-erase-suspend operation. 6. Valid only in the Unlock Bypass mode. 7. Valid only in /RESET = VID (except in the Extra One Time Protect Sector mode). 8. The command sequence that protects a sector group is excluded. 9. Only A0 to A6 are valid as an address. 10. Valid only in the Extra One Time Protect Sector mode. 11. This command can be used even if this data is F0H. Remarks 1. The system should generate the following address pattern : WORD mode : 555H or 2AAH (A10 to A0) BYTE mode 2. RA : AAAH or 555H (A10 to A0, and A-1) : Read address RD : Read data IA : Address input as follows xx00H (to read the manufacturer code) xx02H (to read the device code in the BYTE mode) xx01H (to read the device code in the WORD mode) ID : Code output. For the manufacture code, device code and sector group protection information, refer to the Product ID code. PA : Program address PD : Program data FSA : Erase sector address. The sector to be erased is selected by the combination of A20 to A12. Refer to the Sector Organization / Sector Address Table. BA : Bank address. Refer to the Sector Organization / Sector Address Table. Data Sheet M15504EJ5V0DS 15 PD29F032203AL-Y SPA : Sector group address to be protected or protection-verified. Set the sector group address (SGA) and (A6, A1, A0) = (VIL, VIH, VIL). Sector group protection can be set for each sector group address. For details, refer DUAL OPRATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). For the sector group address, refer to the Sector Group Address Table. SUA : Sector group address to be unprotected or unprotection-verified. Set the sector group address (SGA) and (A6, A1, A0) = (VIH, VIH, VIL). Sector group unprotect is performed for all sector group using a single command, however, unprotect verification must be performed for each sector group address. For details, refer to DUAL OPRATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). For the sector group address, refer to the Sector Group Address Table. EOTPSA : Extra One Time Protect Sector area addresses. These addresses are 3F0000H to 3FFFFFH (BYTE mode) / 1F8000H to 1FFFFFH (WORD mode) for top boot, and 000000H to 00FFFFH (BYTE mode) / 000000H to 007FFFH (WORD mode) for bottom boot. SD : Data for verifying whether sector groups read from the address specified by SPA, SUA, EOTPSA are protected or unprotected. 3. The sector group address is don't care except when a program / erase address or read address are selected. 4. For the operation of bus, refer DUAL OPRATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). 5. x of address bit indicates VIH or VIL. BUS OPERATIONS, COMMANDS, HARDWARE SEQUENCE FLAGS, HARDWARE DATA PROTECTION Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). 16 Data Sheet M15504EJ5V0DS PD29F032203AL-Y Electrical Characteristics Before turning on power, input GND 0.2 V to the /RESET pin until VCC VCC (MIN.). Absolute Maximum Ratings Parameter Supply voltage Symbol VCC Input / Output voltage VT Condition with respect to GND Unit -0.5 to +4.0 V -0.5 with respect /WP(ACC), /RESET to GND Rating except /WP(ACC), /RESET -0.5 Note 1 Note 1 to +13.0 V to VCC + 0.4 (4.0 V MAX.) Note 2 TA -40 to +85 C Tstg -55 to +125 C Operating ambient temperature Storage temperature Notes 1. -2.0 V (MIN.) (pulse width 20 ns) 2. VCC + 2.0 V (MAX.) (pulse width 20 ns) Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Test condition -A85TY, -A85BY MIN. TYP. -B85TY, -B85BY MAX. MIN. TYP. Unit MAX. Supply voltage VCC 3.0 3.6 2.7 3.3 V Operating ambient temperature TA -40 +85 -40 +85 C Capacitance (TA = 25C, f = 1 MHz) Parameter Symbol Test condition MIN. TYP. MAX. Unit Input capacitance CIN VIN = 0 V TBD pF Input / Output capacitance CI/O VI/O = 0 V TBD pF Remarks 1. VIN : Input voltage, VI/O : Input / Output voltage 2. These parameters are not 100% tested. Data Sheet M15504EJ5V0DS 17 PD29F032203AL-Y DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Symbol Test condition MIN. TYP. MAX. Unit High level input voltage VIH 2.4 VCC+0.3 V Low level input voltage VIL - 0.3 +0.5 V High level output voltage VOH IOH = -500 A, VCC = VCC (MIN.) Low level output voltage VOL IOL = +1.0 mA, VCC = VCC (MIN.) 2.4 V 0.4 V Input leakage current ILI -1.0 +1.0 A I/O leakage current ILO -1.0 +1.0 A mA Power Read BYTE mode ICC1 supply current VCC = VCC (MAX.), tCYCLE = 5 MHz 10 16 /CE = VIL, /OE = VIH tCYCLE = 1 MHz 2 4 tCYCLE = 5 MHz 10 16 tCYCLE = 1 MHz 2 4 WORD mode Program, Erase ICC2 VCC = VCC (MAX.), /CE = VIL, /OE = VIH 15 30 mA Standby ICC3 VCC = VCC(MAX.), /CE = /RESET = 0.2 5 A /WP(ACC) = VCC 0.3 V, /OE = VIL Standby / Reset ICC4 VCC = VCC (MAX.), /RESET = GND 0.2 V 0.2 5 A Automatic sleep mode ICC5 VIH = VCC 0.2 V, VIL = GND 0.2 V 0.2 5 A Read during programming ICC6 VIH = VCC 0.2 V, VIL = GND 0.2 V 21 45 mA Read during erasing ICC7 VIH = VCC 0.2 V, VIL = GND 0.2 V 21 45 mA Programming ICC8 /CE = VIL, /OE = VIH, 17 35 mA /WP (ACC) pin 5 10 mA VCC 15 30 during suspend Accelerated Automatic programming during suspend IACC programming /RESET high level input voltage VID High Voltage is applied 11.5 12.5 V Accelerated programming voltage VACC High Voltage is applied 8.5 9.5 V Low VCC lock-out voltageNote VLKO 1.7 V Note When VCC is equal to or lower than VLKO, the device ignores all write cycles. Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). Remark 18 These DC characteristics are in common regardless of product classification. Data Sheet M15504EJ5V0DS PD29F032203AL-Y AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions Input Waveform (Rise and Fall Time 5 ns) 3.0 V 1.5 V Test points 1.5 V 1.5 V Test points 1.5 V 0V Output Waveform Output Load 1 TTL + 30 pF Data Sheet M15504EJ5V0DS 19 PD29F032203AL-Y Read Cycle Parameter Symbol Test Condition MIN. TYP. MAX. 85 Unit Read cycle time tRC ns Address access time tACC /CE = /OE = VIL 85 ns /CE access time tCE /OE = VIL 85 ns /OE access time tOE /CE = VIL 40 ns Output disable time tDF /OE = VIL or /CE = VIL 30 ns Output hold time tOH 0 ns /RESET pulse width tRP 500 ns /RESET hold time before read tRH 50 ns /RESET low to read mode tREADY 20 s /CE low to /BYTE low, high tELFL/tELFH 5 ns /BYTE low output disable time tFLQZ 30 ns /BYTE high access time tFHQV 85 ns tOEH 20 ns /OE low level time from /WE high level Remark 20 tDF is the time from inactivation of /CE or /OE to high impedance state output. Data Sheet M15504EJ5V0DS Note PD29F032203AL-Y Write Cycle (Program / Erase) (1/2) Parameter Symbol MIN. Write cycle time tWC 85 ns Address setup time (/WE to address) tAS 0 ns Address setup time (/CE to address) tAS 0 ns Address hold time (/WE to address) tAH 45 ns Address hold time (/CE to address) tAH 45 ns Input data setup time tDS 35 ns Input data hold time tDH 0 ns tOEH 0 ns /OE hold time Read Toggle bit, Data polling TYP. MAX. Unit 10 Read recovery time before write (/OE to /CE) tGHEL 0 ns Read recovery time before write (/OE to /WE) tGHWL 0 ns tWS 0 ns /CE setup time (/WE to /CE) tCS 0 ns /WE hold time (/CE to /WE) tWH 0 ns /CE hold time (/WE to /CE) tCH 0 ns Write pulse width tWP 35 ns /CE pulse width tCP 35 ns Write pulse width high tWPH 30 ns /CE pulse width high tCPH 30 ns Byte programming operation time tBPG 9 200 s Word programming operation time tWPG 11 200 s tSER 0.3 1.0 s 32K words sector 0.5 1.5 4K words sector 0.5 3.0 32K words sector 0.7 5.0 33.9 102.5 48.1 339 7 150 /WE setup time (/CE to /WE) Sector erase operation time 4K words sector Chip erase operation time tCER Accelerated programming time Note tACCPG Program / erase cycle 1,2 1,3 s 1,2 1,3 s 300,000 cycle VCC setup time tVCS 50 s RY (/BY) recovery time tRB 0 ns /RESET pulse width tRP 500 ns /RESET high-voltage (VID) hold time from high of RY(/BY) tRRB 20 s tRH 50 ns when sector group is temporarily unprotect /RESET hold time Notes 1. The preprogramming time prior to the erase operation is not included. 2. Program / erase cycle : 100,000 cycles 3. Program / erase cycle : 300,000 cycles Data Sheet M15504EJ5V0DS 21 PD29F032203AL-Y Write Cycle (Program / Erase) (2/2) Parameter Symbol MAX. Unit tEOE 85 ns RY (/BY) delay time from valid program or erase operation tBUSY 90 ns Address setup time to /OE low in toggle bit tASO 15 ns Address hold time to /CE or /OE high in toggle bit tAHT 0 ns /CE pulse width high for toggle bit tCEPH 20 ns /OE pulse width high for toggle bit tOEPH 20 ns Voltage transition time tVLHT 4 s 1 Rise time to VID (/RESET) tVIDR 500 ns 2 From completion of automatic program / erase to data MIN. TYP. Note output time Rise time to VACC (/WP(ACC)) tVACCR 500 ns 1 Erase timeout time tTOW 50 s 3 Erase suspend transition time tSPD s 3 20 Notes 1. Sector group protection and accelerated mode only. 2. Sector group protection only. 3. Table only. Write operation (Erase / Program) Performance Parameter Sector erase time Chip erase time Description MIN. TYP. MAX. Unit Note s 1 s 2 s 1 The preprogramming time prior 4K words sector 0.3 1.0 to the erase operation 32K words sector 0.5 1.5 is not included 4K words sector 0.5 3.0 32K words sector 0.7 5.0 The preprogramming time prior 33.9 102.5 to the erase operation is not included 48.1 339 2 Byte programming time Excludes system-level overhead 9 200 s Word programming time Excludes system-level overhead 11 200 s Chip programming time Accelerated programming time Excludes system-level BYTE mode 40 overhead WORD mode 25 Excludes system-level overhead Program / erase cycle 7 300,000 Notes 1. Program / erase cycle : 100,000 cycles 2. Program / erase cycle : 300,000 cycles TIMING CHARTS, FLOW CHARTS Refer to DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information (M14914E). 22 Data Sheet M15504EJ5V0DS s 150 s cycle PD29F032203AL-Y CFI Code List (1/2) Address A6 to A0 Data I/O15 to I/O0 Description 10H 0051H 11H 0052H 12H 0059H 13H 0002H Main command set 14H 0000H 2 : AMD/FJ standard type 15H 0040H Start address of PRIMARY table 16H 0000H 17H 0000H Auxiliary command set 18H 0000H 00H : Not supported 19H 0000H Start address of auxiliary algorithm table 1AH 0000H 1BH 0027H "QRY" (ASCII code) Minimum VCC voltage (program / erase) I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 1CH 0036H Maximum VCC voltage (program / erase) I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 1DH 0000H Minimum VPP voltage 1EH 0000H Maximum VPP voltage 1FH 0004H Typical word program time (2 N s) 20H 0000H Typical buffer program time (2 N s) 21H 000AH Typical sector erase time (2 N ms) 22H 0000H Typical chip erase time (2 N ms) 23H 0005H Maximum word program time (typical time x 2 N) 24H 0000H Maximum buffer program time (typical time x 2 N) 25H 0004H Maximum sector erasing time (typical time x 2 N) 26H 0000H Maximum chip erasing time (typical time x 2 N) 27H 0016H Capacity (2 N Bytes) 28H 0002H I/O information 29H 0000H 2 : x8/x16-bit organization 2AH 0000H Maximum number of bytes when two banks are programmed (2 N) 2BH 0000H 2CH 0002H Type of erase block 2DH 0007H Information about erase block 1 2EH 0000H bit0 to bit15 : y = number of sectors 2FH 0020H bit16 to bit31 : z = size 30H 0000H (Z x 256 Bytes) Data Sheet M15504EJ5V0DS 23 PD29F032203AL-Y CFI Code List (2/2) Address A6 to A0 Data I/O15 to I/O0 31H 003EH Description Information about erase block 2 32H 0000H bit0 to bit15 : y = number of sectors 33H 0000H bit16 to bit31 : z = size 34H 0001H (z x 256 Bytes) 40H 0050H "PRI" (ASCII code) 41H 0052H 42H 0049H 43H 0031H Main version (ASCII code) 44H 0032H Minor version (ASCII code) 45H 0000H Address during command input 00H : Necessary 01H : Unnecessary 46H 0002H Temporary erase suspend function 00H : Not supported 01H : Read only 02H : Read / Program 47H 0001H Sector group protection 00H : Not supported 01H : Supported 48H 0001H Temporary sector group protection 00H : Not supported 01H : Supported 49H 0004H Sector group protection algorithm 4AH 00xxH Number of sectors of bank 2 00H : Not supported 30H : PD29F032203AL-Y 4BH 0000H Burst mode 00H : Not supported 4CH 0000H Page mode 4DH 0085H Minimum VACC voltage 00H : Not supported I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 4EH 0095H Maximum VACC voltage I/O7 to I/O4 : 1 V/bit I/O3 to I/O0 : 100 mV/bit 4FH 00xxH Boot organization 02H : Bottom boot ( -A85BY, -B85BY ) 03H : Top boot ( -A85TY, -B85TY ) 50H 0001H Temporary program suspend function 00H : Not supported 01H : Supported 24 Data Sheet M15504EJ5V0DS PD29F032203AL-Y Package Drawings 48-PIN PLASTIC TSOP (I) (12x20) detail of lead end 1 48 F G R Q 24 L 25 S E P I A J C S K N S NOTES 1) Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 2) "A" excludes mold flash. (Includes mold flash : 12.4 mm MAX.) B D M M ITEM A MILLIMETERS 12.00.1 B 0.45 MAX. C 0.5 (T.P.) D 0.220.05 E 0.10.05 F 1.2 MAX. G 1.00.05 I 18.40.1 J 0.80.2 K 0.1450.05 L 0.5 M 0.10 N 0.10 P 20.00.2 Q 3+5 -3 R 0.25 S 0.600.15 S48GZ-50-MJH-1 Data Sheet M15504EJ5V0DS 25 PD29F032203AL-Y 63-PIN TAPE FBGA (11x7) w E ZD S B ZE B 8 7 6 5 4 3 2 1 A D ML K J HGF EDCBA w INDEX MARK S A A y1 A2 S S y e S b x A1 M S AB ITEM D MILLIMETERS 7.000.10 E 11.000.10 w 0.20 A 0.970.10 A1 0.270.05 A2 e 0.70 0.80 b x 0.450.05 0.08 y y1 0.10 0.20 ZD 0.70 ZE 1.10 P63F9-80-BS2 26 Data Sheet M15504EJ5V0DS PD29F032203AL-Y Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the PD29F032203AL-Y. Types of Surface Mount Device PD29F032203ALGZ-MJH : 48-pin PLASTIC TSOP(I) (12 x 20) (Normal bent) PD29F032203ALF9-BS2 : 63-pin TAPE FBGA (11 x 7) Data Sheet M15504EJ5V0DS 27 PD29F032203AL-Y Revision History Edition/ Date Page Type of This Previous edition edition Location Description revision (Previous edition -> This edition) 5th edition/ p.13 p.13 Modification Product ID Code Device code(Byte mode):I/O15 = Hi-ZA-1 Sep.2002 p.16 p.15 Modification Command Sequence Remark 2 : SPA, SUA p.20 p.19 Addition Read Cycle tOEH 28 Data Sheet M15504EJ5V0DS PD29F032203AL-Y [ MEMO ] Data Sheet M15504EJ5V0DS 29 PD29F032203AL-Y [ MEMO ] 30 Data Sheet M15504EJ5V0DS PD29F032203AL-Y NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet M15504EJ5V0DS 31 PD29F032203AL-Y Related Documents Document Name DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information Document Number M14914E * The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4