GaAs-IR-Lumineszenzdioden (950 nm) in SMR(R) Gehause GaAs Infrared Emitters (950 nm) in SMR(R) Package Lead (Pb) Free Product - RoHS Compliant SFH 4510 SFH 4515 SFH 4510 SFH 4515 Wesentliche Merkmale Features * * * * * GaAs-LED mit sehr hohem Wirkungsgrad SMR(R) (Surface Mount Radial) Gehause Fur Oberflachenmontage geeignet Gegurtet lieferbar Gehausegleich mit Fotodiode SFH 2500/ SFH 2505 * Hohe Zuverlassigkeit * Gute spektrale Anpassung an Si-Fotoempfanger * * * * * Anwendungen Applications * IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Lichtdimmern * Geratefernsteuerungen fur Gleich- und Wechsellichtbetrieb * Sensorik * Diskrete Lichtschranken * Diskrete Optokoppler * IR remote control of hi-fi and TV-sets, video tape recorders, dimmers * Remote control for steady and varying intensity * Sensor technology * Discrete interrupters * Discrete optocouplers Very highly efficient GaAs-LED SMR(R) (Surface Mount Radial) package Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 * High reliability * Spectral match with silicon photodetectors Typ Type Bestellnummer Ordering Code Gehause Package SFH 4510 Q65110A2630 SFH 4515 Q65110A2633 5-mm-SMR(R)-Gehause (T 1 3/4), schwarzes EpoxyGieharz, Anschlusse (SFH 4510 gebogen, SFH 4515 gerade) im 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: siehe Mazeichnung. 5 mm SMR(R) package (T 1 3/4), black-colored epoxy resin, solder tabs (SFH 4510 bent, SFH 4515 straight) lead spacing 2.54 mm (1/10''), cathode marking: see package outline. 2007-04-02 1 SFH 4510, SFH 4515 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 5 V Durchlassstrom Forward current IF (DC) 100 mA Stostrom, tp = 10 s, D = 0 Surge current IFSM 3 A Verlustleistung Power dissipation Ptot 150 mW 300 K/W Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 20 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 20 mm2 each Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA peak 950 nm Spektrale Bandbreite bei 50% von max Spectral bandwidth at 50% of max IF = 100 mA 55 nm Abstrahlwinkel Half angle 14 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.3 x 0.3 mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr , tf 0.5 s 2007-04-02 2 SFH 4510, SFH 4515 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kapazitat Capacitance VR = 0 V, f = 1 MHz Co 25 pF VF VF 1.30 ( 1.5) 2.30 ( 2.8) V V Sperrstrom Reverse current VR = 5 V IR 0.01 ( 1) A Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e 22 mW Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA TCI - 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV -2 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s 2007-04-02 3 SFH 4510, SFH 4515 Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie typ Ie min 50 25 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ 450 mW/sr 2007-04-02 4 SFH 4510, SFH 4515 Relative Spectral Emission Irel = f () Single pulse, tp = 20 s 10 2 A OHRD1938 100 OHR01551 80 Max. Permissible Forward Current IF = f (TA) 125 OHF01534 I F mA e e 100 mA % rel e = f (IF) e 100 mA Radiant Intensity 100 10 1 75 60 10 0 50 40 10 -1 20 25 0 880 920 960 nm 1000 10 -2 10 -3 1060 Forward Current IF = f (VF), single pulse, tp = 20 s F 10 0 A F 10 4 10 1 tp 0 D= tp T F D = 0.005 T 0.01 0.02 10 -1 10 3 5 0.1 0.05 0.2 10 -2 0.5 10 -3 0 1 2 3 4 5 6 V VF DC 10 2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp 8 Radiation Characteristics rel = f () 40 30 20 10 0 OHF00265 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2007-04-02 0.8 0.6 0.4 0 20 40 60 80 5 100 0 0 10 20 30 40 50 60 70 80 C 100 T OHR00860 F mA 5 A 10 10 -1 Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter OHR01554 10 1 10 -2 120 SFH 4510, SFH 4515 Mazeichnung Package Outlines SFH 4510 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) 14.7 (0.579) 13.1 (0.516) 2.54 (0.100) spacing 3.3 (0.130) -0.1...0.2 (-0.004...0.008) 3.7 (0.146) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 4.4 (0.173) 2.05 (0.081) R 1.95 (0.077) 4.8 (0.189) 7.5 (0.295) 2.7 (0.106) 2.4 (0.094) Chip position 4.5 (0.177) 3.9 (0.154) 6.0 (0.236) 5.4 (0.213) 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) Cathode/ Collector GEOY6968 SFH 4515 Cathode/ Collector 4.8 (0.189) 4.4 (0.173) 2.54 (0.100) spacing 15.5 (0.610) 14.7 (0.579) 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) GEOY6969 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-02 -0.15...0.15 (-0.006...0.006) 7.4 (0.291) 2.7 (0.106) 2.4 (0.094) 8.0 (0.315) Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) 6 SFH 4510, SFH 4515 5.3 (0.209) 2.54 (0.100) SFH 4510 1.3 (0.051) Empfohlenes Lotpaddesign Recommended Solder Pad Bauteil positioniert Component Location on Pad Padgeometrie fur verbesserte Warmeableitung Lotpad Paddesign for improved heat dissipation 3 (0.118) Lotstopplack Solder resist 7 (0.276) 5.9 (0.232) 2.54 (0.100) SFH 4515 1.3 (0.051) Cu-Flache > 20 mm 2 Cu-area > 20 mm 2 OHFY2449 Bauteil positioniert Component Location on Pad Lotpad Padgeometrie fur verbesserte Warmeableitung (1 (0.039)) 1.5 (0.059) Paddesign for improved heat dissipation 5.2 (0.205) 3 (0.118) Lotstopplack Solder resist Aussparung 4.85 (0.191) 0.05 (0.002) 7 (0.276) Cu-Flache > 20 mm 2 Cu-area > 20 mm 2 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-02 7 OHF02450 SFH 4510, SFH 4515 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T Vorbehandlung nach JEDEC Level 3 Preconditioning acc. to JEDEC Level 3 (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 min. condition for IR Reflow Soldering: solder point temperature 235 C for at least 10 sec. 25 C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-02 8