TLP624,TLP624−2,TLP624−4
2014-09-08
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP624, TLP624−2, TLP624−4
Programmable Controllers
AC/DC−Input Module
Telecommunication
The TOSHIBA TLP624, −2 and −4 consist of a gallium arsenide infrared
emitting diode optically coupled to a photo−transistor.
The TLP624−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP624−4 provides four isolated channels in a sixteen plastic
DIP.
• Collector−emitter voltage: 55V (min)
• Current transfer ratio
• Isolation voltage: 5000Vrms (min)
• UL recognized: UL1577, file No.E67349
• BSI approved: BS EN60065: 2002 Certificate No.7426
BS EN60950-1: 2002 Certificate No.7427
• Note: Application type name for certification test, please use
standard product type name, i.e.
TLP624(BV): TLP624
TLP624−2(BV): TLP624−2
Pin Configurations (top view)
1. Anode
2. Cathode
3. Emitter
4. Collector
TLP624
1
2
4
3
1,3,5,7: Anode
2,4,6,8: Cathode
9,11,13,15: Emitter
10,12,14,16: Collector
TLP624
–
4
1
2
16
15
3
4
14
13
5
6
12
11
7
8
10
9
1,3 : Anode
2,4 : Cathode
5,7 : Emitter
6,8 : Collector
1
2
8
7
3
4
6
5
TLP624
–
2
TOSHIBA 11−5B2
Weight: 0.26 g (typ.)
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
TOSHIBA 11−20A3
Weight: 1.1 g (typ.)
Classification
Current Transfer Ratio(min) Marking
of
classification
Ta = 25°C Ta=−25~75°C
IF=1mA
VCE=0.5V
IF=0.5mA
VCE=1.5V
IF=1mA
VCE=0.5V
Rank BV 200% 100% 100% BV
Standard 100% 50% 50% BV, blank
Unit: mm
Start of commercial production
1986/04
TLP624,TLP624−2,TLP624−4
2014-09-08
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol
Rating
Unit
TLP624 TLP624−2
TLP624−4
LED
Forward current IF 60 50 mA
Forward current detating ∆IF / °C −0.7(Ta ≥ 39°C) −0.5(Ta ≥ 25°C) mA / °C
Pulse forward current IFP 1 (100μs, pulse, 100pps) A
Power dissipation (1 circuit) PD 100 70 mW
Power dissipation derating (Ta ≥ 25°C, 1 circuit) ∆PD / °C −1.0 −0.7 mW / °C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector
Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation (1 circuit) PC 150 100 mW
Collector power dissipation derating (Ta ≥ 25°C, 1 circuit) ∆PC / °C −1.5 −1.0 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Popr −55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation (1 circuit) PT 250 150 mW
Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ∆PT / °C −2.5 −1.5 mW / °C
Isolation voltage (Note 1) BVS 5000 (AC, 1 minute, R.H.≤60%) Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: LED side pins shorted together, and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 1.6 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 75 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP624,TLP624−2,TLP624−4
2014-09-08
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10mA 1.0 1.15 1.3 V
Reverse current IR V
R= 5V ― ― 10 μA
Capacitance CT V = 0, f = 1MHz ― 30 ― pF
Detector
Collector−emitter breakdown voltage V(BR)CEO IC = 0.5mA 55 ― ― V
Emitter−collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V
Collector dark current ICEO
VCE = 24V ― 10 100 nA
VCE = 24V, Ta = 85°C ― 2 50 μA
Capacitance collector to emitter CCE V=0 , f=1MHz ― 12 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Current transfer ratio IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
100 ― 1200
%
200 ― 1200
Low input CTR IC / IF (low)
IF = 0.5mA, VCE = 1.5V
Rank BV
50 ― ―
%
100 ― ―
Collector−emitter saturation voltage VCE (sat)
IC = 0.5mA, IF = 1mA ― ― 0.4
V
IC = 1mA, IF = 1mA
Rank BV
― 0.2 ―
― ― 0.4
Coupled Electrical Characteristics (Ta = −25°C~75°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Current transfer ratio IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
50 ― ―
%
100 ― ―
Low input CTR IC / IF (low)
IF = 0.5mA, VCE = 1.5V
Rank BV
― 50 ―
%
― 100 ―
TLP624,TLP624−2,TLP624−4
2014-09-08
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance input to output CS VS = 0, f = 1MHz ― 0.8 ― pF
Isolation resistance RS V
S = 500 V, R.H. ≤ 60% 5×1010 1014 ― Ω
Isolation voltage BVS
AC, 1minute 5000 ― ―
Vrms
AC, 1second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10V, IC = 2mA
RL = 100Ω
― 8 ―
μs
Fall time tf ― 8 ―
Turn−on time ton ― 10 ―
Turn−off time toff ― 8 ―
Turn−on time tON
RL = 4.7 kΩ (Fig.1)
VCC = 5 V, IF = 1.6mA
― 10 ―
μs
Storage time tS ― 50 ―
Turn−off time tOFF ― 300 ―
Fig. 1 Switching time test circuit
IF
RL
VCC
VCE VCE
tON
IF
tOFF
VCC
4.5V
0.5V
tS
TLP624,TLP624−2,TLP624−4
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∆VF / ∆Ta – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ∆VF / ∆Ta (mV / °C)
－2.8
－0.4
0.3 50
0.1
－0.8
－1.2
－1.6
－2.0
－2.4
0.5 1 3 5 10 30
1
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
0
500
300
100
50
30
10
5
3
0.4 0.8 1.2 1.6 2.0 2.4
Pulse width ≦ 10 μs
Repetitive
Frequency = 100 Hz
Ta = 25 °C
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
0
–20
80
60
40
20
0 20 40 60 80 100 120
TLP624
TLP624－2,－4
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.4
50
30
10
5
3
1
0.5
0.3
0.6 0.8 1.0 1.2 1.4 1.6
Ta = 25 °C
Duty cycle ratio DR
Allowable pulse forward current
IFP (mA)
IFP – DR
5000
10
3
3000
1000
500
300
100
50
30
10－3 3 10－2 3 10－1 3 100
Pulse width ≦ 100 μs
Ta = 25 °C
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
PC – Ta
200
0
160
120
80
40
－20 0 20 40 60 80 100 120
TLP624
TLP624－2,－4
TLP624,TLP624−2,TLP624−4
2014-09-08
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IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
1000
10
0.1
500
300
50
30
0.3 0.5 1 3 5 10
100
IC – IF
Forward current IF (mA)
Collector current IC (mA)
50
0.01
0.1
0.5
0.3
0.05
0.03
0.3 0.5 1 3 5 10
0.1
Ta = 25 °C
VCE = 5 V
VCE = 1.5 V
VCE = 0.5 V
30
10
5
3
1
Ambient temperature Ta (°C)
Collector current IC (mA)
IC – Ta
0.03 －20
30
10
5
3
1
0.5
0.3
0 20 40 60 80 100
0.1
0.05
VCE = 1.5 V
VCE = 0.5 V
0.2 mA
0.5 mA
1 mA
2mA
IF = 2 mA
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
4.0
0
0.1
3.5
2.0
1.0
0.5
0.3 0.5 1 3 5 10
1.5
Ta = 25 °C
3.0
2.5
IF = 1.0 mA
0.8 mA
0.6 mA
0.5 mA
0.4 mA
0.2 mA
Ta = 25 °C
VCE = 5 V
VCE = 1.5 V
VCE = 0.5 V
TLP624,TLP624−2,TLP624−4
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Ambient temperature Ta (°C)
Collector dark current ID (ICEO) (μA)
ID – Ta
10－5
0
101
100
10－1
10－2
10－3
20 40 60 80 100 120
10－4
5 V
VCE = 24 V
10 V
Load resistance RL (kΩ)
Switching time (μs)
Switching Time – RL
3
3000
1000
500
300
100
50
30
10
5
1 3 5
10 30 50 100
Ta = 25 °C
IF = 1.6 mA
VCC = 5 V
tOFF
ts
tON
TLP624,TLP624−2,TLP624−4
2014-09-08
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for
such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.
Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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