SEMICONDUCTOR KTA1504S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). *Low Noise : NF=1dB(Typ.), 10dB(Max.). *Complementary to KTC3875S. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -30 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A 70 - 400 - -0.1 -0.3 V 80 - - MHz - 4.0 7.0 pF - 1.0 10 dB hFE(Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Collector Output Capacitance Noise Figure Cob NF VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1kHz, Rg=10k Note : hFE Classification O:70140 , Y:120240 , GR(G):200400 2007. 6. 13 Revision No : 3 1/3 KTA1504S 2007. 6. 13 Revision No : 3 2/3 KTA1504S 2007. 6. 13 Revision No : 3 3/3