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SEMICONDUCTOR
TECHNICAL DATA
KTA1504S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
·Low Noise : NF=1dB(Typ.), 10dB(Max.).
·Complementary to KTC3875S.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE Classification O:70～140 , Y:120～240 , GR(G):200～400
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-150 mA
Base Current IB-30 mA
Collector Power Dissipation PC150 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 μA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA
DC Current Gain hFE(Note) VCE=-6V, IC=-2mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA --0.1 -0.3 V
Transition Frequency fTVCE=-10V, IC=-1mA 80 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF
Noise Figure NF VCE=-6V, IC=-0.1mA
f=1kHz, Rg=10kΩ- 1.0 10 dB
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KTA1504S
Revision No : 3
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KTA1504S
Revision No : 3
