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Rev.1.00, Aug.20.2004, page 1 of 7
CR03AM-16
Thyristor
Low Power Use
REJ03G0355-0100
Rev.1.00
Aug.20.2004
Features
• IT (AV) : 0.3 A
• VDRM : 800 V
• IGT : 100 µA
• Non-Insulated Type
• Glass Passivation Type
Outline
2
1
3
TO-92
1. Cathode
2. Anode
3. Gate
3
1
2
Applications
Leakage protector, timer, and gas igniter
Maximum Ratings
Voltage class
Parameter Symbol 16 Unit
Repetitive peak reverse voltage VRRM 800 V
Non-repetitive peak reverse voltag e VRSM 960 V
DC reverse voltage VR(DC) 640 V
Repetitive peak off-state voltageNote1 VDRM 800 V
Non-repetitive peak off-state voltageNote1 VDSM 960 V
DC off-state voltageNote1 VD(DC) 640 V
CR03AM-16
Rev.1.00, Aug.20.2004, page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 0.47 A
Average on-state current IT (AV) 0.3 A Commercial frequency, sine ha lf wave
180° conduction, Ta = 47°C
Surge on-state current ITSM 20 A 60Hz sine half wave 1 full cycle,
peak value, non-repetitive
I2t for fusing I2t1.6A
2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate forward voltage VFGM 6V
Peak gate reverse voltage VRGM 6V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj – 40 to +110 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 0.23 g Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Rated value
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 0.1 mA Tj = 110°C, VRRM applied
Repetitive peak off-state current IDRM — — 0.1 mA Tj = 110°C, VDRM applied,
RGK = 1 kΩ
On-state voltage VTM — — 1.8 V Ta = 25°C, ITM = 4 A,
instantaneous value
Gate trigger voltage VGT — — 0.8 V Tj = 25°C, VD = 6 V,
IT = 0.1 ANote2
Gate non-trigger voltage VGD 0.2 — — V Tj = 110°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Gate trigger current IGT 1 — 100 µA Tj = 25°C, VD = 6 V,
IT = 0.1 ANote2
Holding current IH— 1.5 3 mA Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Thermal resistance Rth (j-a) — — 180 °C/W Junction to ambient
Notes: 2. IGT, VGT measurement circuit.
3V
DC
I
GS
I
GT
6V
DC
60
Ω
V
GT
2
1
T
UT
1
k
Ω
R
GK
A
3
A2
V1
A1
S
witc
h
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
CR03AM-16
Rev.1.00, Aug.20.2004, page 3 of 7
Performance Curves
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
× 100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
10
0
2510
1
8
4
37 10
2
425
37
4
12
16
20
6
2
10
14
18
0
10
2
10
–2
10
0
10
1
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
57 23 57
10
–1
10
2
23 57 23 52357
V
FGM
= 6V
V
GT
= 0.8V
(Tj = 25°C)
I
GT
= 100µA
(Tj = 25°C)
P
GM
= 0.5W
V
GD
= 0.2V I
FGM
= 0.3A
2310
–3
5710
–2
23 5710
–1
23 5710
0
200
0
80
100
120
140
160
180
40
60
20
2310
0
5710
1
23 5710
2
23 5710
3
60–20–40 0 20 40 80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
120
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
–60–40 –20 20 80 140120
0.2
0.5
0.9
06040 100
I
GT
(25°C) = 35µA
Ta = 25°C
Typical Example
Typical Example
Distribution
P
G(AV)
= 0.1W
CR03AM-16
Rev.1.00, Aug.20.2004, page 4 of 7
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Ambient Temperature (°C)Ambient Temperature (°C) Ambient Temperature (°C)
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
Average On-State Current (A)
160
120
60
40
20
140
100
80
000.2 0.40.1 0.3 0.5
θ = 30°
60°120°
90°180°
0.3
0.2
0.1
0.4
00.50.4
00.1 0.2 0.3
0.5
θ = 30°
60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
000.2 0.40.1 0.3 0.5
θ = 30°
60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
000.2 0.40.1 0.3 0.5
θ = 30°
60°
90°
180°270°
DC
120°
160
120
60
40
20
140
100
80
00.5
00.2 0.40.1 0.3
θ = 30°
120°
180°
DC
270°
60°
90°
160
120
60
40
20
140
100
80
000.2 0.40.1 0.3 0.5
60°120°180°θ = 30°90°
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
θ θ
360°
Resistive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
CR03AM-16
Rev.1.00, Aug.20.2004, page 5 of 7
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/µs)
× 100 (%)
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
160
120
60
40
20
140
100
80
0120
–40 04080–20 20 60 100
RGK
= 1kΩ
2310
–1
5710
0
23 5710
1
23 5710
2
160
0
80
100
120
140
40
60
20
Tj = 110°C
2310
0
5710
1
23 5710
2
23 5710
3
200
180
0
80
100
120
160
140
40
60
20
Tj = 25°C
RGK
= 1kΩ
Tj = 110°C
2310
–2
10
–1
57 2 3 5710
0
23 5710
1
0
100
200
300
400
500 160
120
60
40
20
140
100
80
0120
–40 04080–20 20 60 100
60–20–40–60 0 20 40 80 100120 140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
RGK
= 1kΩ
VD = 12V, Tj = 25°C
# 2
# 1
Junction Temperature (°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example Typical Example
Distribution
I
GT(25°C) = 35µA
Typical Example
Typical Example
IGT(25°C) IH(1kΩ)
10µA
26µA
1.0mA
1.1mA
# 1
# 2
Typical Example
CR03AM-16
Rev.1.00, Aug.20.2004, page 6 of 7
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Current Pulse Width (µs)
Gate Trigger Current (µA)
10
2
23410
0
5710
1
2435710
2
10
4
10
3
7
5
4
3
2
7
5
4
3
2
Tj = 25°C
# 1 # 2
Typical Example
IGT(DC)
16µA
65µA
# 1
# 2
CR03AM-16
Rev.1.00, Aug.20.2004, page 7 of 7
Package Dimensions
TO-92
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
Conforms 0.23 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
1.25 1.25
11.5 min
φ 5.0 max
4.4
1.1
3.6 5.0 max
Circumscribed circle φ 0.7
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 500 Type name CR03AM-16
Lead form Vinyl sack 500 Type name – Lea d forming code CR03AM-16-A6
Form A8 Taping 2000 Type name – TB CR03AM-16-TB
Note : Please confirm the specificati on about the shipping in detail.
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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