2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 SERIES types are complementary Silicon Power Transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current SYMBOL VCBO VCEO Thermal Resistance 60 80 UNITS V V 5.0 V 7.0 A ICM IB 15 A Continuous Base Current Operating and Storage Junction Temperature 2N6316 2N6318 80 VEBO IC Peak Collector Current Power Dissipation 2N6315 2N6317 60 2.0 A 90 W PD TJ, Tstg -65 to +200 C JC 1.95 C/W MAX 0.25 UNITS mA 0.25 mA 2.0 mA 0.50 mA 1.0 mA ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV ICEO VCE=Rated VCEO, VBE=1.5V, TC=150C VCE=1/2 Rated VCEO IEBO BVCEO VEB=5.0V IC=100mA, (2N6315, 2N6317) BVCEO VCE(SAT) IC=100mA, (2N6316, 2N6318) IC=4.0A, IB=0.4A 1.0 V VCE(SAT) VBE(SAT) IC=7.0A, IB=1.75A IC=7.0A, IB=1.75A 2.0 V 2.5 V VBE(ON) hFE VCE=4.0V, IC=2.5A VCE=4.0V, IC=0.5A 1.5 V 35 hFE VCE=4.0V, IC=2.5A VCE=4.0V, IC=7.0A 4.0 hFE hfe fT VCE=4.0V, IC=500mA, f=1.0kHz VCE=10V, IC=250mA, f=1.0MHz 60 V 80 V 20 100 20 4.0 MHz R2 (6-April 2011) 2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX Cob VCB=10V, IE=0, f=1.0MHz, (2N6315, 2N6316) 200 Cob tr toff UNITS pF VCB=10V, IE=0, f=1.0MHz, (2N6317, 2N6318) VCC=30V, IC=2.5A IB1=IB2=0.25A 300 pF 0.7 s VCC=30V, IC=2.5A IB1=IB2=0.25A 1.8 s TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (6-April 2011) w w w. c e n t r a l s e m i . c o m