SILICON PLASTIC POWER TRANSISTOR NPN TIP41C 6A 65W Technical Data ...designed for use in general-purpose switching and amplifier applications. F Collector-Emitter Saturation VoltageVCE(sat)=1.5Vdc(Max)@IC=6Adc F Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage V CEO 100 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CB V EB IC 100 5 6 10 2 Vdc Vdc Adc Tj,Tstg 65 0.52 -65 to +150 Watts W/C C Symbol Max. Unit R thjc 1.92 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case IB PD Adc C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage (1) [ Ic =30mAdc, IB = 0 ] Collector Cutoff Current [ VCE = 60 Vdc, IB = 0 ] Symbol Min VCEO(sus) 100 ICE0 Collector Cutoff Current [ VCE =100 Vdc,VBE = 0 ] ICES Emitter Cutoff Current [ VBE =5.0 Vdc , Ic = 0 ] IEBO * ON CHARACTERISTICS (1): DC Current Gain [ Ic =0.3 Adc , VCE = 4.0 Vdc ] [ Ic = 3 Adc , VCE = 4.0 Vdc ] C unless otherwise noted ] Typ Max Unit Vdc 0.7 mAdc 400 Adc 1 mAdc hFE 30 15 75 Collector-Emitter Saturation Voltage [ Ic = 6Adc , IB = 600mAdc ) VCE(sat) 1.5 Vdc Base-Emitter on Voltage [ Ic =6.0 Adc , VCE= 4.0. Vdc ] VBE(on) 2.0 Vdc DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [Ic=0.5Adc,VCE=10Vdc,ftest=1.0 MHz ] Small-Signal Current Gain [ IC= 0.5 Adc, VCE=10 Vdc, f=1kHz] * * fT 3 hfe 20 Indicates within JEDEC Registration Data. (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0% MHz