SILICON PLASTIC POWER TRANSISTOR
NPN TIP41C
6A 65W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F Collector-Emitter Saturation Voltage-
VCE(sat)=1.5Vdc(Max)@IC=6Adc
F Collector-Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min)
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V CEO 100 Vdc
Collector – Base Voltage V CB 100 Vdc
Emitter Base Voltage V EB 5 Vdc
Collector Current – Continuos
Peak I C 6
10 Adc
Base Current I B2 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 65
0.52 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 1.92 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
[ Ic =30mAdc, IB = 0 ] V
CEO(sus)
100 Vdc
Collector Cutoff Current
[ VCE = 60 Vdc, IB = 0 ] ICE0 0.7 mAdc
Collector Cutoff Current
[ VCE =100 Vdc,VBE = 0 ] ICES 400 µAdc
Emitter Cutoff Current
[ VBE =5.0 Vdc , Ic = 0 ] IEBO 1mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic =0.3 Adc , VCE = 4.0 Vdc ]
[ Ic = 3 Adc , VCE = 4.0 Vdc ]
hFE 30
15 75
Collector-Emitter Saturation Voltage
[ Ic = 6Adc , IB = 600mAdc ) VCE(sat) 1.5 Vdc
Base-Emitter on Voltage
[ Ic =6.0 Adc , VCE= 4.0. Vdc ] VBE(on) 2.0 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,V
CE=10Vdc,ftest=1.0 MHz
]
fT3 MHz
Small-Signal Current Gain
[ IC= 0.5 Adc, VCE=10 Vdc, f=1kHz] hfe 20
Indicates within JEDEC Registration Data.
(1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%