KOM 2125
KOM 2125 FA
2fach-Silizium-PIN Fotodiode in SMT
2-Chip Silicon PIN Photodiode in SMT
KOM 2125 KOM 2125 FA
2001-02-21 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm und bei 880 nm
(KOM 2125 FA)
• Kurze Schaltzeit (typ. 25 ns)
• geeignet für Vapor-Phase Löten und
IR-Reflow-Löten
• SMT-fähig
Anwendungen
• Nachlaufsteuerungen
• Kantenführung
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
KOM 2125 Q62702-K0047
KOM 2125 FA Q62702-P5313
Features
• Especially suitable for applications from
400 nm to 1100 nm and of 880 nm
(KOM 2125 FA)
• Short switching time (typ. 25 ns)
• Suitable for vapor-phase and IR-reflow
soldering
• Suitable for SMT
Applications
• Follow-up controls
• Edge drives
• Industrial electronics
• For control and drive circuits
2001-02-21 2
KOM 2125, KOM 2125 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg –40 …+80 °C
Sperrspannung
Reverse voltage VR60 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C)
Characteristics (TA = 25 °C)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
KOM 2125 KOM 2125 FA
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A
T = 2856 K, Ev = 1000 Ix
VR = 5 V, λ = 870 nm,Ee = 1mW/cm2
Diode A
Diode B
Diode A
Diode B
IP
IP
40 (> 30)
100 (> 75)
–
–
–
–
26 (> 20)
70 (> 50)
µA
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 …1100 750 ... 1100 nm
Bestrahlungsempfindl iche Fläche Diode A
Radiant sensitive area Diode B A4
10 4
10 mm2
Abmessung der
bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area Diode A
Diode B L×B
L×W2×2
2×52×2
2×5mm ×mm
mm ×mm
Abstand Chipoberfläche zu Vergußoberfläche
Distance chip front to case seal H0.3 0.3 mm
Halbwinkel
Half angle ϕ±60 ±60 Grad
deg.
Dunkelstrom, VR = 10 V Diode A
Dark current Diode B IR5 (≤ 30)
10 (≤ 30) 5 (≤ 30)
10 (≤ 30) nA
KOM 2125, KOM 2125 FA
2001-02-21 3
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A
Ee = 1 mW/cm2, λ = 850 nm VO
VO
350 (> 300)
––
350 (> 300) mV
mV
Kurzschlussstrom
Shor t-circuit curre nt
Normlicht/standard light A
T = 2856 K, Ev = 1000 Ix
λ = 870 nm, Ee = 1 mW/cm2
Diode A
Diode B
Diode A
Diode B
ISC
ISC
38
95
–
–
–
–
24
66
µA
µA
Anstiegszeit/Abfallzeit Diode A
Rise and fall time Diode B
RL = 50 Ω; VR = 5 V;
λ = 850 nm; IP = 800 µA
tr, tf18
25 18
25 ns
Durchlassspannung, IF = 100 mA; E = 0
Forward voltage VF1.0 1.0 V
Kapazität Diode A
Capacitance Diode B
VR = 0 V; f = 1 MHz ; E = 0
C040
100 40
100 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 – 2.6 mV/K
Temperaturkoeffizient von IP
Temperature coefficient of IP
Normlicht/standard light A
λ = 850 nm TCI0.18
– –
0.2 %/K
Rauschäquivalente
Strahlungsleistung Diode A
Noise equivalent power Diode B
VR = 10 V
NEP 6.4 ×10– 14
9.1 ×10– 14 6.4 ×10– 14
9.1 ×10– 14
Nachweisgrenze, VR = 10 V Diode A
Detection limit Diode B D* 3.1 ×1012
3.5 ×1012 3.1 ×1012
3.5 ×1012
Kennwerte (TA = 25 °C)
Characteristics (TA = 25 °C) (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
KOM 2125 KOM 2125 FA
W
Hz
------------
cm Hz×
W
--------------------------
KOM 2125, KOM 2125 FA
2001-02-21 4
Relati ve Sp ectral Sen si ti vi ty
KOM 2125, Srel = f (λ)
Dark Current, IR = f (VR), E = 0
norma liz ed t o 10 V/ 25 °C
Directional Cha ra cter i sti cs
Srel = f (ϕ)
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Relative Spectral Sensitivity
KOM 2125 FA, Srel = f (λ)
Capacitance
C = f (VR), f = 1 MHz, E = 0
λ
OHF01430
400
rel
S
0600 800 1000 nm 1200
10
20
30
40
50
60
70
80
%
100
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Vol t age VO = f (Ev)
Dark Current IR = f (TA), VR = 10 V,
E = 0, normalized to TA = 25 °C
Total Power Di ssip at i on
Ptot = f (TA)
KOM 2125, KOM 2125 FA
2001-02-21 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dimensions are s pecified as follo w s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention ple ase!
The inform at ion describes the type of co m ponent and sha ll not be c ons idered as assured char ac te ristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail, it is reasonab le t o as su me that the health of the user m ay be endangered.
1.4 (0.055) ±0.2 (0.008)
4.5 (0.177)
4.3 (0.169)
8.5 (0.335)
8.2 (0.323)
0.9 (0.035)
0.7 (0.028)
GEOY6860
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
0...0.1 (0...0.004)
5.2 (0.205)
5.0 (0.197) 23
1
AB
Photosensitive area
B = 5 (0.197) x 2 (0.079)
A = 2 (0.079) x 2 (0.079)
Cathode
Active area
Chip position
