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MOS FIELD EFFECT TRANSISTOR
2SK2487
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D10283EJ3V0DS00 (3rd edition)
Date Published November 2006 N CP(K)
Printed in Japan The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what." field.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
DATA SHEET
DESCRIPTION
The 2SK2487 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.
FEATURES
•Low on-state resistance
RDS (on) = 1.6 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Low input capacitance
Ciss = 2 100 pF TYP.
•High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (VGS = 0 V) VDSS 900 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current (DC) ID (DC) ±8.0 A
Drain Current (pulse)*ID (pulse) ±20 A
Total Power Dissipation (Tc = 25 ˚C) PT1 140 W
Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 8.0 A
Single Avalanche Energy** EAS 264 mJ
*PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2487
2Data Sheet D10283EJ3V0DS
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25 Ω
50 Ω
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG. RG = 10 Ω
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS VDS
BVDSS
Starting Tch
VGS
0
t = 1 us
Duty Cycle ≤ 1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 1.1 1.6 VGS = 10 V, ID = 4.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 3.0 VDS = 20 V, ID = 4.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 2100 VDS = 10 V
Output Capacitance Coss 310 VGS = 0
Reverse Transfer Capacitance Crss 60 f = 1 MHz
Turn-On Delay Time td (on) 30 ID = 4.0 A
Rise Time tr20 VGS = 10 V
Turn-Off Delay Time td (off) 130 VDD = 150 V
Fall Time tf23 RG = 10 Ω
Total Gate Charge QG65 ID = 8.0 A
Gate to Source Charge QGS 11 VDD = 450 V
Gate to Drain Charge QGD 29 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 8.0 A, VGS = 0
Reverse Recovery Time trr 770 IF = 8.0 A, VGS = 0
Reverse Recovery Charge Qrr 5.0 di/dt = 50 A/
µ
s
UNIT
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
2SK2487
3
Data Sheet D10283EJ3V0DS
TYPICAL CHARACTERISTICS (TA = 25 °C)
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
020 40 60 80 100 120 140 160
140
120
100
80
60
40
20
0.1
1
1
10
100
10 100 1 000
T
C
= 25 ˚C
Single Pulse
020 30 40
10
1.0
10
100 Pulsed
20
10
0
Pulsed
51015
R
DS(on)
Limited
Power Dissipation Limited
I
D(DC)
I
D(pulse)
PW = 100 s
µ
1 ms
10 ms
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - ˚C
dT - Percentage of Rated Power - %
020 40 60 80 100 120 140 160
20
40
60
80
100
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
2SK2487
4Data Sheet D10283EJ3V0DS
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t) - Transient Thermal Resistance - ˚C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
| yfs | - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - Ω
010
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off) - Gate to Source Cutoff Voltage - V
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - Ω
0.5
1.0
10
0.001
0.01
0.1
1
100
1 000
1 m 10 m 100 m 1 10 100 1 000 10
VDS = 20 V
Pulsed
10.1
1
10
100
10 100
1.0
20 30
Pulsed
1.0
10 100
Pulsed
VGS = 10 V
0
4
VDS = 10 V
ID = 1 mA
–50 050100 150
0
1
Single Pulse
Tc = 25 ˚C
2.0
Rth(ch-a) = 41.7(˚C/W)
Rth(ch-c) = 0.89(˚C/W)
3
2
1
1.5
µ
100
µ
TA
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C ID = 8 A
4 A
1.6 A
2SK2487
5
Data Sheet D10283EJ3V0DS
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-State Resistance - Ω
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1.0
0.1
0
–50
1.0
050 100 150
V
GS
= 10 V
I
D
= 4 A
0.1
0
1
10
100
0.5
Pulsed
10
1.0
100
1 000
10 000
10 100 1 000
V
GS
= 0
f = 1 MHz
10
100
1 000
1.0 10 100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/ s
V
GS
= 0
µ
10
0.1
100
1 000
1.0 10 100
1.0 1.5
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10 Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
020 40 60 80
200
400
600
800
2
4
6
8
10
12
14
16
0
2.0
3.0
4.0
C
iss
C
rss
C
oss
V
DD
= 450 V
300 V
150 V
V
GS
V
DS
t
r
t
d(on)
t
f
t
d(off)
V
GS
= 10 V
V
GS
= 0V
10 000
2SK2487
6Data Sheet D10283EJ3V0DS
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
1.0
0
25
10
100
µ
1 m 1 m 10 m
V
DD
= 150 V
V
GS
= 20 V → 0
R
G
= 25 Ω
20
80
120
160
50 75 100 125 150
100
60
40
140
I
AS
= 8 A
E
AS
= 264 mJ
100
V
DD
= 150 V
R
G
= 25 Ω
V
GS
= 20 V → 0
I
AS
8.0 A
<
_
2SK2487
7
Data Sheet D10283EJ3V0DS
PACKAGE DRAWING (Unit: mm)
TO-3P (MP-88)
15.7 MAX. 3.2±0.2
4.5±0.2
5.0 TYP. 1.0 TYP.
3.0±0.25
20.0±0.25
19 MIN.
2.2±0.2
5.45 TYP.5.45 TYP.
1.0±0.2
4.7 MAX.
1.5 TYP.
6.0 TYP.
2.8±0.10.6±0.1
123
4
φ
1.Gate
2.Drain
3.Source
4.Fin (Drain)
<R>
Body
Diode
Source
Drain
Gate
EQUIVALENT CIRCUIT
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
2SK2487
The information in this document is current as of November, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer’s equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics’ willingness to support a given application.
(Note)
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
