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MMBTA56 / PZTA 56 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBTA56 / PZTA56 Rev. 1.4
February 2015
MMBTA56 / PZTA56
PNP General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Figure 1. MMBTA56 Device Package Figure 2. PZTA56 Device Package
Part Number Marking Package Packing Method
MMBTA56 2G SOT-23 3L Tape and Reel
PZTA56 A56 SOT-223 4L Tape and Reel
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage -80 V
VCBO Collector-Base Voltage -80 V
VEBO Emitter-Base Voltage -4.0 V
ICCollector Current - Continuous -500 mA
TJ , TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
SOT-23
Mark: 2G
C
B
E
SOT-223
E
BC
C
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from process 73.
MMBTA56 / PZTA 56 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBTA56 / PZTA56 Rev. 1.4 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Max. Unit
MMBTA56(3) PZTA56(4)
PD
Total Device Dissipation 350 1000 mW
Derate Above 25°C 2.8 8.0 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 357 125 °C/W
Symbol Parameter Conditions Min. Max. Unit
V(BR)CEO
Collector-Emitter Breakdown
Voltage(5) IC = -1.0 mA, IB = 0 -80 V
V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -4.0 V
ICEO Collector Cut-Off Current VCE = -60 V, IB = 0 -0.1 μA
ICBO Collector Cut-Off Current VCB = -80 V, IE = 0 -0.1 μA
hFE DC Current Gain IC = -10 mA, VCE = -1.0 V 100
IC = -100 mA, VCE = -1.0 V 100
VCE(sat) Collector-Emitter Saturation
Voltage IC = -100 mA, IB = -10 mA -0.25 V
VBE(on) Base-Emitter On Voltage IC = -100 mA, VCE = -1.0 V -1.2 V
fTCurrent Gain - Bandwidth Product IC = -100 mA, VCE = -1.0 V,
f = 100 MHz 50 MHz
MMBTA56 / PZTA 56 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBTA56 / PZTA56 Rev. 1.4 3
Typical Performance Characteristics
Figure 3. Typical Pulsed Current Gain vs.
Collector Current Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage vs.
Collector Current Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature Figure 8. Input and Output Capacitance
vs. Reverse Voltage
0. 0 01 0 . 01 0. 1
50
100
150
200
250
300
I - CO L LEC TOR CU RR ENT (A)
h - TYPICAL PULSED CURRE NT GAIN
FE
- 40 °C
C
V = 1V
CE
125 °C
25 °C
10 100
0
0. 2
0. 4
0. 6
0. 8
I - COLLECTOR CURRENT (mA)
V - COLLEC TOR EM ITTE R VOLTA GE (V)
C
CESAT
β= 10
- 40 °C
125 °C
25 °C
10 100 1000
0. 4
0. 6
0. 8
1
1. 2
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
β= 10
- 40 °C
125 °C
25 °C
0. 1 1 1 0 10 0 1 00 0
0
0. 2
0. 4
0. 6
0. 8
1
1. 2
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE( ON)
V = 1V
CE
- 40 °C
125 °C
25 °C
25 50 75 100 125
0.001
0.01
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
º
V = 60V
CB
0.1 1 10 100
100
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pF)
C
f = 1.0 MHz
CE
ib
Cob
MMBTA56 / PZTA 56 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBTA56 / PZTA56 Rev. 1.4 4
Typical Performance Characteristics (Continued)
Figure 9. Collector Saturation Region Figure 10. Gain Bandwidth Product
vs. Collector Current
Figure 11. Power Dissipation vs.
Ambient Temperature
3000 5000 10000 20000 30000 50000
0
2
4
6
8
10
I - BASE CURRENT (uA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CE
B
10 mA 100 mA
1 mA
T = 25° C
I =
C
A
1 10 100
0
50
100
150
200
250
300
350
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 5V
CE
0 255075100125150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
MMBTA56 / PZTA 56 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBTA56 / PZTA56 Rev. 1.4 5
Physical Dimensions
Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
MMBTA56 / PZTA 56 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBTA56 / PZTA56 Rev. 1.4 6
Physical Dimensions (Continued)
Figure 13. MOLDED PACKAGING, SOT-223, 4-LEAD
®
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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