FDN352AP Single P-Channel, PowerTrench(R) MOSFET Features General Description -1.3 A, -30V -1.1 A, -30V RDS(ON) = 180 m @ VGS = -10V RDS(ON) = 300 m @ VGS = -4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. High performance trench technology for extremely low RDS(ON). High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Applications Notebook computer power management D D S G G S SuperSOTTM-3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage 25 V ID Drain Current -1.3 A - Continuous (Note 1a) - Pulsed PD -10 Power Dissipation for Single Operation TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 C C/W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 RJC Thermal Resistance, Junction-to-Case (Note 1) 75 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7'' 8mm 3000 units (c)2005 Fairchild Semiconductor Corporation FDN352AP Rev. C1 1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET August 2005 Symbol Parameter Test Conditions Min Typ Max Units -17 mV/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 A IGSS Gate-Body Leakage VGS = 25 V, VDS = 0 V 100 nA -30 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) TJ Gate Threshold Voltage Temperature Coefficient ID = -250 A, Referenced to 25C RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.3 A VGS = -4.5 V, ID = -1.1 A VGS = -4.5 V, ID = -1.1 A, TJ = 125C 150 250 330 gFS Forward Transconductance VDS = -5 V, ID = -0.9 A 2.0 VDS = -15 V, VGS = 0 V, f = 1.0 MHz -0.8 -2.0 -2.5 V mV/C 4 180 300 400 m S Dynamic Characteristics Ciss Input Capacitance 150 pF Coss Output Capacitance 40 pF Crss Reverse Transfer Capacitance 20 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf 4 8 ns 15 28 ns Turn-Off Delay Time 10 18 ns Turn-Off Fall Time 1 2 ns 1.4 1.9 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -10 V, RGEN = 6 VDS = -10V, ID = -0.9 A, VGS = -4.5 V nC 0.5 nC 0.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = -3.9 A, dIF/dt = 100 A/s (Note 2) -0.8 -0.42 A -1.2 V 17 ns 7 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 250C/W when mounted on a 0.02 in2 pad of 2oz. copper. (b) RJA = 270C/W when mounted on a 0.001 in2 pad of 2oz. copper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2 FDN352AP Rev. C1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted 10 2.4 VGS = -4.0V -ID, DRAIN CURRENT (A) 8 -6.0V 6 -4.5V 4 -4.0V 2 2.2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -3.5V 2.0 -4.5V 1.8 -5.0V 1.6 -6.0V 1.4 -7.0V -8.0V -10V 1.2 1.0 -3.0V 0 0.8 0 1 2 3 -VDS , DRAIN TO SOURCE VOLTAGE (V) 4 5 0 Figure 1. On-Region Characteristics. 8 10 0.7 I D = -0.45A I D = -0.9A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 6 -ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1 0.8 0.6 0.6 0.5 0.4 T A = 125 oC 0.3 T A = 25 oC 0.2 0.1 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE ( oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 8 -I S , REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 2 TA = -55 oC o 125 C 6 o 25 C 4 2 VGS = 0V 10 1 TA = 125 oC 0.1 25 oC 0.01 -55 oC 0.001 0.0001 0 1 2 3 4 5 6 -VGS , GATE TO SOURCE VOLTAGE (V) 7 0.0 8 Figure 5. Transfer Characteristics. 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDN352AP Rev. C1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET Typical Characteristics 10 200 f = 1 MHz VGS = 0 V 8 V DS = -10V 150 CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) I D = -0.9A -20V 6 -15V 4 Ciss 100 Coss 50 2 Crss 0 0 0 0.5 1 1.5 2 Q g, GATE CHARGE (nC) 2.5 0 3 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 5 100s 10 RDS(ON) LIMIT 1ms 10ms 1 100ms 1s 10s DC VGS = -10V SINGLE PULSE R JA = 270 o C/W 0.1 o TA = 25 C 1 10 -V DS , DRAIN-SOURCE VOLTAGE (V) 30 20 10 0 0.0001 0.01 0.1 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE RJA = 270C/W T A = 25C 40 0.001 0.01 0.1 1 t 1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R JA(t) = r(t) * R JA 0.2 0.1 R JA = 270C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - TA = P * R JA(t) Duty Cycle, D = t 1 / t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 4 FDN352AP Rev. C1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 5 FDN352AP Rev. C1 www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET TRADEMARKS