TM UniFET FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Features Description * * * * * These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. 44A, 250V, RDS(on) = 0.069 @VGS = 10 V Low gate charge ( typical 47 nC) Low Crss ( typical 60 pF) Fast switching Improved dv/dt capability This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP44N25 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD Power Dissipation FDPF44N25T 250 (Note 1) Unit V 44 26.4 44* 26.4* A A 176 176* A 30 V (Note 2) 2055 mJ (Note 1) 44 A Repetitive Avalanche Energy (Note 1) 30.7 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25C) - Derate above 25C 307 2.45 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds 38 0.3 W W/C -55 to +150 C 300 C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP44N25 FDPF44N25T Unit RJC Thermal Resistance, Junction-to-Case 0.41 3.3 C/W RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2009 Fairchild Semiconductor Corporation FDP44N25 / FDPF44N25T Rev. B 1 www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET March 2009 Device Marking Device Package Reel Size Tape Width Quantity FDP44N25 FDP44N25 TO-220 - - 50 FDPF44N25T FDPF44N25T TO-220F - - 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A, TJ = 25C 250 -- -- V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25C -- 0.25 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.058 0.069 -- 32 -- S -- 2210 2870 pF -- 450 585 pF -- 60 90 pF -- 53 117 ns -- 402 814 ns -- 85 179 ns -- 112 234 ns -- 47 61 nC -- 18 -- nC -- 24 -- nC On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 22A gFS Forward Transconductance VDS = 40V, ID = 22A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 44A RG = 25 (Note 4, 5) VDS = 200V, ID = 44A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 44 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 44A -- -- 1.4 V trr Reverse Recovery Time 195 -- ns Reverse Recovery Charge VGS = 0V, IS = 44A dIF/dt =100A/s -- Qrr -- 1.8 -- C (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 44A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDP44N25 / FDPF44N25T Rev. B www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 2 10 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 1 10 o 150 C 1 10 o 25 C o -55 C 0 10 * Notes : 1. 250s Pulse Test * Notes : 1. VDS = 40V o 2. TC = 25 C 2. 250s Pulse Test 0 -1 0 10 10 10 10 1 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 IDR, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 0.10 0.08 VGS = 10V 0.06 VGS = 20V 0.04 o 10 1 10 o o 150 C 25 C * Notes : 1. VGS = 0V * Note : TJ = 25 C 2. 250s Pulse Test 0 10 0 25 50 75 100 125 0.2 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 3000 VGS, Gate-Source Voltage [V] Capacitances [pF] 4000 Coss Ciss 2000 * Note : 1. VGS = 0 V 1000 Crss VDS = 50V 10 Crss = Cgd 5000 2. f = 1 MHz VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 44A 0 -1 10 0 0 10 0 1 10 3 FDP44N25 / FDPF44N25T Rev. B 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 A 2.0 1.5 1.0 2. ID = 22 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 o Operation in This Area is Limited by R DS(on) 2 DC 0 10 * Notes : o 1. TC = 25 C -1 10 150 200 10 s 100 s 1 ms 1 10 ms 10 100 ms DC Operation in This Area is Limited by R DS(on) 0 10 * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 -2 10 100 10 ID, Drain Current [A] 1 10 50 Figure 9-2. Maximum Safe Operating Area for FDPF44N25 10 s 100 s 1 ms 10 ms 100 ms 2 0 TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP44N25 10 -50 o TJ, Junction Temperature [ C] ID, Drain Current [A] * Notes : 1. VGS = 10 V 0.5 10 0 1 10 2 10 0 10 10 1 10 2 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 50 ID, Drain Current [A] 40 30 20 10 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 4 FDP44N25 / FDPF44N25T Rev. B www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Typical Performance Characteristics (Continued) ZJC(t), Thermal Response Figure 11-1. Transient Thermal Response Curve for FDP44N25 D=0.5 10 -1 0.2 0.1 PDM t1 0.05 10 t2 0.02 0.01 -2 * N otes : o 1. Z JC (t) = 0.41 C /W Max. 2. D uty Factor, D=t1 /t 2 single pulse 10 -5 10 -4 3. T JM - T C = P DM * Z JC (t) 10 -3 10 -2 10 -1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF44N25 ZJC(t), Thermal Response D=0.5 10 0 0.2 0.1 PDM 0.05 t1 10 t2 -1 0.02 * Notes : 0 1. Z JC(t) = 3.3 C/W Max. 0.01 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Z JC(t) single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] 5 FDP44N25 / FDPF44N25T Rev. B www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FDP44N25 / FDPF44N25T Rev. B www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FDP44N25 / FDPF44N25T Rev. B www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters 8 FDP44N25 / FDPF44N25T Rev. B www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F Dimensions in Millimeters 9 FDP44N25 / FDPF44N25T Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I39 10 FDP44N25 / FDPF44N25T Rev. B www.fairchildsemi.com FDP44N25 / FDPF44N25T 250V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.