Document Number: 93513 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 25-May-09 1
Standard Recovery Diodes,
(Stud Version), 40 A
40HF(R) Series
Vishay Semiconductors
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V VRRM
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls
• Welding
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 40 A
DO-203AB (DO-5)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS 40HF(R) UNITS
10 TO 120 140/160
IF(AV)
40 40 A
TC140 110 °C
IF(RMS) 62 A
IFSM
50 Hz 570 A
60 Hz 595
I2t50 Hz 1600 A2s
60 Hz 1450
VRRM Range 100 to 1200 1400/1600 V
TJ- 65 to 190 - 65 to 160 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40HF(R)
10 100 200
9
20 200 300
40 400 500
60 600 700
80 800 900
100 1000 1100
120 1200 1300
140 1400 1500 4.5
160 1600 1700
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93513
2Revision: 25-May-09
40HF(R) Series
Vishay Semiconductors Standard Recovery Diodes,
(Stud Version), 40 A
Notes
(1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 40HF(R) UNITS
10 TO 120 140/160
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave 40 40 A
140 110 °C
Maximum RMS forward current IF(RMS) 62 A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
570
A
t = 8.3 ms 595
t = 10 ms 100 % VRRM
reapplied
480
t = 8.3 ms 500
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1600
A2s
t = 8.3 ms 1450
t = 10 ms 100 % VRRM
reapplied
1150
t = 8.3 ms 1050
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s
Value of threshold voltage
(up to 1200 V) VF(TO)
TJ = TJ maximum
0.65
V
Value of threshold voltage
(for 1400 V/1600 V) VF(TO) 0.76
Value of forward slope resistance
(up to 1200 V) rf
TJ = TJ maximum
4.29
m
Value of forward slope resistance
(for 1400 V/1600 V) rf3.8
Maximum forward voltage drop VFM Ipk = 125 A, TJ = 25 °C, tp = 400 µs rectangular wave 1.30 1.50 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 40HF(R) UNITS
10 TO 120 140/160
Maximum junction operating and
storage temperature range TJ, TStg - 65 to 190 - 65 to 160 °C
Maximum thermal resistance,
junction to case RthJC DC operation 0.95
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25
Maximum allowable mounting
torque (+ 0 %, - 10 %)
Not lubricated thread, tighting on nut (1) 3.4 (30)
N · m
(lbf · in)
Lubricated thread, tighting on nut (1) 2.3 (20)
Not lubricated thread, tighting on hexagon (2) 4.2 (37)
Lubricated thread, tighting on hexagon (2) 3.2 (28)
Approximate weight 17 g
0.6 oz.
Case style See dimensions - link at the end of datasheet DO-203AB (DO-5)
Document Number: 93513 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 25-May-09 3
40HF(R) Series
Standard Recovery Diodes,
(Stud Version), 40 A Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.14 0.10
TJ = TJ maximum K/W
120° 0.16 0.17
90° 0.21 0.22
60° 0.30 0.31
30° 0.50 0.50
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
130
140
150
160
170
180
190
0 5 10 15 20 25 30 35 40 45
30° 60° 90° 120° 180°
Conduction Angle
40HF(R) Series (100V to 1200V)
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
120
130
140
150
160
170
180
190
0 10203040506070
DC
30° 60°
90°
120°
180°
Conduction Period
40HF(R) Series (100V to 1200V)
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
100
110
120
130
140
150
160
0 5 10 15 20 25 30 35 40 45
30° 60° 90° 120°
180°
Conduction Angle
40HF(R) Series (1400V, 1600V)
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
80
90
100
110
120
130
140
150
160
0 10203040506070
DC
30°
60°
90°
120°
180°
Conduction Period
40HF(R) Series (1400V, 1600V)
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93513
4Revision: 25-May-09
40HF(R) Series
Vishay Semiconductors Standard Recovery Diodes,
(Stud Version), 40 A
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Forward Power Loss Characteristics
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
0 40 80 120 160 200
10 K/W
RthSA = 1 K/W - Delta R
1.5 K/W
2 K/W
3 K/W
5 K/W
7 K/W
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
40HF(R) Series
(100V to 1200V)
Tj = 190°C
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
0 40 80 120 160 200
10 K/W
RthSA = 1 K/W - Delta R
1.5 K/W
2 K/W
3 K/W
5 K/W
7 K/W
0
10
20
30
40
50
60
0 10203040506070
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
40HF(R) Series
(100V to 1200V)
Tj = 190°C
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
0 25 50 75 100 125 150 175 200
1.5 K/W
2 K/W
3 K/W
5 K/W
10 K/W
7 K/W
RthSA = 1 K/W - Delta R
0
5
10
15
20
25
30
35
40
45
50
0 10203040
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
40HF(R) Series
(1400V, 1600V)
Tj = 160°C
Document Number: 93513 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 25-May-09 5
40HF(R) Series
Standard Recovery Diodes,
(Stud Version), 40 A Vishay Semiconductors
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 11 - Forward Voltage Drop Characteristics
(Up To 1200 V)
Fig. 12 - Forward Voltage Drop Characteristics
(For 1400 V/1600 V)
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
04080120160
10 K/W
RthSA = 1 K/W - Delta R
1.5 K/W
2 K/W
3 K/W
5 K/W
7 K/W
0
10
20
30
40
50
60
70
0 10203040506070
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
40HF(R) Series
(1400V, 1600V)
Tj = 160°C
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
100
150
200
250
300
350
400
450
500
550
110100
40HF(R) Series
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
100
150
200
250
300
350
400
450
500
550
600
0.01 0.1 1
Maximum Non Repetitive Surge Current
40HF(R) Series
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
Versus Pulse Train Duration.
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
40HF(R) Series
up to 1200V
Tj = 25°C
Tj = Tj Max.
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93513
6Revision: 25-May-09
40HF(R) Series
Vishay Semiconductors Standard Recovery Diodes,
(Stud Version), 40 A
Fig. 13 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Square Wave Pulse Duration (s)
Transient Impedance Z
thJC
(K/W)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Steady State Value
(DC Operation)
40HF(R) .. Series
1- 40 = Standard device
41 = Not isolated lead
42 = Isolated lead with silicone sleeve
(red = Reverse polarity)
(blue = Normal polarity)
2- HF = Standard diode
3- None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
4- Voltage code x 10 = VRRM (see Voltage Ratings table)
5- None = Stud base DO-203AB (DO-5) 1/4" 28UNF-2A
M = Stud base DO-203AB (DO-5) M6 x 1
Device code
51324
40 HF R 160 M
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95344
Document Number: 95344 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 29-Sep-08 1
DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS FOR 40HF(R) SERIES in millimeters (inches)
1.20 (0.04)
1/4" 28UNF-2A
for metric devices: M6 x 1
4 (0.16) MIN.
4 (0.16)
Ø 14.6 (0.57)
6.1/7
(0.24/0.27)
25.4 (1) MAX.
17.40 (0.68)
11.1 ± 0.4
(0.44 ± 0.02)
10.8 (0.42)
11.4 (0.45)
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95344
2Revision: 29-Sep-08
Outline Dimensions
Vishay Semiconductors DO-203AB (DO-5) for 40HF(R)
and 41HF(R) Series
DIMENSIONS FOR 41HF(R) SERIES in millimeters (inches)
11 (0.43) MAX.
Ø 6.3 (0.25) MAX.
118.5 (4.67)
MAX.
107 (4.21)
MAX.
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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