AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 650V RDS(ON) 0.62 ID G 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-220 and TO-262 package is widely preferred for commercialindustrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. G D S G D S TO-262(R) TO-220(P) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 10 A ID@TC=100 Continuous Drain Current, V GS @ 10V 6.8 A 40 A 174 W 1.39 W/ 50 mJ 10 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 0.72 /W 62 /W 1 200811035 AP10N70R/P-A o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 3 Min. Typ. Max. Units VGS=0V, ID=1.0mA 650 - - V VGS=10V, ID=5.0A - - 0.62 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A - 16 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS= + 30V - - +100 nA ID=10A - 36 58 nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 8.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 11.5 - nC 3 td(on) Turn-on Delay Time VDD=300V - 15 - ns tr Rise Time ID=10A - 20 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 52 - ns tf Fall Time RD=30 - 23 - ns Ciss Input Capacitance VGS=0V - 1950 3120 pF Coss Output Capacitance VDS=15V - 630 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Rg Gate Resistance f=1.0MHz - 2 3 Min. Typ. IS=10A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 575 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 10.6 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25 , IAS=10A. 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP10N70P/R-A 20 16 T C =25 o C ID , Drain Current (A) ID , Drain Current (A) 16 10V 6.0V 5.0V T C =150 o C 10V 6.0V 5.0V 12 8 4.5V 12 4.5V 8 V G = 4.0V 4 4 V G =4.0V 0 0 0 5 10 15 20 0 10 V DS , Drain-to-Source Voltage (V) 20 30 40 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =5A V G =10V 1 2 1 0.9 0 0.8 -50 0 50 100 25 150 Fig 3. Normalized BVDSS v.s. Junction 75 100 125 150 Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.5 T j = 150 o C Normalized VGS(th) (V) 10 IS (A) 50 T j , Junction Temperature ( o C ) T j , Junction Temperature ( o C) T j = 25 o C 1 1 0.5 0 0.1 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP10N70P/R-A f=1.0MHz 4000 16 V DS =320V V DS =400V V DS =480V 12 3000 C (pF) VGS , Gate to Source Voltage (V) I D =10A 8 4 2000 C iss 1000 0 C oss C rss 0 0 20 40 60 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 100us ID (A) 10 1ms 1 10ms 100ms o T c =25 C Single Pulse 1S Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse DC 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4