31 fo 1 egaP 00.3 .veR 0030JE6300SD90R
Jun 20, 2012
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teehS ataD
NESG2101M05
NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW)
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
•The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
•Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
•High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
•Flat-lead 4-pin thin-type super minimold (M05) package
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
scp 05 A-50M1012GSEN 50M1012GSEN
(Non reel)
NESG2101M05-T1 NESG2101M05-T1-A
Flat-lead 4-pin thin-type
supper minimold
(M05, 2012 PKG)
(Pb-Free) 3 kpcs/reel
•8 mm wide embossed taping
•Pin 3 (Collector), Pin 4
(Emitter) face the perforation
side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Total Power Dissipation Ptot
Note 500 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg−65 to +150 °C
Note: Mounted on 38 cm2× 0.4 mm (t) polyimide PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
<R>
R09DS0036EJ0300
Rev. 3.00
Jun 20, 2012
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ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 100 nA
DC Current Gain hFE
Note 1 VCE = 2 V, IC = 5 mA 130 190 260 −
scitsiretcarahC FR
Gain Bandwidth Product fT VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 − GHz
Insertion Power Gain S21e2 VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 − dB
Noise Figure (1) NF VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
− 0.9 1.2 dB
Noise Figure (2) NF VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
− 0.6 − dB
Associated Gain (1) Ga VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
11.0 13.0 − dB
Associated Gain (2) Ga VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
− 19.0 − dB
Reverse Transfer Capacitance Cre
Note 2 VCB = 2 V, IE = 0, f = 1 MHz − 0.4 0.5 pF
Maximum Stable Power Gain MSG Note 3 VCE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0 − dB
Gain 1 dB Compression Output
Power
PO (1 dB) VCE = 3.6 V, ICq = 10 mA, f = 2 GHz − 21 − dBm
G niaG raeniL L VCE = 3.6 V, ICq = 10 mA, f = 2 GHz − 15 − dB
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank FB/YFB
Marking T1J
hFE Value 130 to 260
S21
S12
<R>
<R>
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TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
f = 1 MHz
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.6
0.8
0.2
0.4
0 2 4 6 8 10
VCE = 1 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 3 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 2 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 4 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.6 0.19.08.04.0
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
700
500
600
400
200
300
100
025 50 75 100 125 150
Total Power Dissipation Ptot (mW)
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Polyimide PCB
(38 × 38 mm, t = 0.4 mm)
Remark The graph indicates nominal characteristics.
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1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
1 000
100
10 1 001011.0
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 4 V
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
40
50
60
70
80
90
10
20
30
0 1 2 3 4 56
I
B
= 50 A
μ
300 A
μ
500 A
μ
350 A
μ
400 A
μ
450 A
μ
200 A
μ
150 A
μ
100 A
μ
250 A
μ
Remark The graph indicates nominal characteristics.
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VCE = 1 V
f = 2 GHz
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
5
10
15
010 0011
VCE = 2 V
f = 2 GHz
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
5
10
15
010 0011
VCE = 3 V
f = 2 GHz
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
5
10
15
010 0011
VCE = 4 V
f = 2 GHz
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
5
10
15
010 0011
Remark The graph indicates nominal characteristics.
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V
CE
= 2 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 1 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 4 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 3 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
Remark The graph indicates nominal characteristics.
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Jun 20, 2012
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAG
MSG
|S21e|2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S21e|2
VCE = 1 V
f = 3 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
0
–5
–101 10 100
MAG
MSG
|S21e|2
VCE = 2 V
f = 3 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
0
–5
–101 10 100
MAG
MSG
|S21e|2
VCE = 2 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S21e|2
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAG
MSG
|S21e|2
Remark The graph indicates nominal characteristics.
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V
CE
= 3 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 3 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
0
–5
–101 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 4 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
0
–5
–101 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 4 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 4 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAG
MSG
|S
21e
|
2
Remark The graph indicates nominal characteristics.
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V
CE
= 3.6 V, f = 1 GHz
I
cq
= 10 mA
30
25
20
15
10
5
0
120
20
40
60
100
80
0
–20 –5–10–15 0 5 10
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.6 V, f = 2 GHz
I
cq
= 10 mA
25
20
15
10
5
0
–5
120
20
40
60
100
80
0
–15 0–5–10 5 10 15
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.6 V, f = 3 GHz
I
cq
= 10 mA
25
20
15
10
5
0
–5
120
20
40
60
100
80
0
–15 0–5–10 5 10 15
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.6 V, f = 5.2 GHz
I
cq
= 10 mA
25
20
15
10
5
0
–5
120
20
40
60
100
80
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
Remark The graph indicates nominal characteristics.
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NESG2101M05
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5
4
3
2
1
0
25
10
5
20
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1 GHz
G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 2 GHz
G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 3 GHz
G
a
NF
5
4
3
2
1
0
25
10
5
20
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz
G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 3 GHz
G
a
NF
RemarkThe graphs indicate nominal characteristics.
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5
4
3
2
1
0
25
10
5
20
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 1 GHz G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 2 GHz
G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 3 GHz
G
a
NF
5
4
3
2
1
0
25
10
5
20
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 4 V
f = 1 GHz G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 4 V
f = 2 GHz
G
a
NF
4
3
2
1
0
20
5
10
15
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 4 V
f = 3 GHz
G
a
NF
RemarkThe graphs indicate nominal characteristics.
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S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
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PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
0.59±0.05
0.11
+0.1
–0.05
(Bottom View)
(0.65)0.65
1.30
2.0±0.1
4 3
1 2
1.25±0.1
2.05±0.1
0.30
+0.1
–0.05
(Top View)
Remark
( )
:
Reference value
0.5
(1.05)
T1J
PIN CONNENTION
1. Base
2. Emitter
3. Collector
4. Emitter
<R>
A Business Partner of Renesas Electronics Corporation.
DISCONTINUED
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NESG2101M05 Data Sheet
Description
Rev. Date Page Summary
− Mar 2003 − Previous No. : PU10190EJ02V0DS
p.1 Modification of ORDERING INFORMATION
p.2 Modification of ELECTRICAL CHARACTERISTICS
Modification of hFE CLASSIFICATION
p.12 Modification of S-PARAMETERS
3.00 Jun 20, 2012
p.13 Modification of PACKAGE DIMENSIONS
DISCONTINUED
