NORMALLY-OFF SILICON
CARBIDE POWER JFET
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Numbe
r 8965
Issue
2
Page 1 of
1
SML100M12MSF
• RDS(on)max of 0.150Ω
• High Temperature Operation Tj = 200°C
• Low Gate Charge and Intrinsic Capacitance
• Positive Temperature Coefficient and Temperature
Independent Switching Behaviour
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain-Source Blocking Voltage 1200 V
RDS(on)max Drain-Source On-resistance 0.15 Ω
ID Available Drain Current 24 A
IDM Pulsed Drain Current 34 A
PD Power Dissipation 70 W
VGS DC Gate-Source Voltage -15 to +3 V
TJ Operating Temperature -55 to +200 °C
TJstg Storage Temperature -55 to +225 °C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC
Thermal Resistance, Junction To Case, TC = 25°C 1.8 2.5 °C/W
APPLICATIONS
• SMPS
• Motor Drive
• UPS
• Induction Heating
NORMALLY-OFF SILICON
CARBIDE POWER JFET
SML100M12MSF
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8965
Issue
2
Page 2 of
2
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Blocking
Voltage VGS = 0V, ID = 1.0mA
1200 - - V
IDSS Drain-Source Leakage
Current
VDS = 1200V, VGS = 0V
- - 1.0
mA
VDS = 1200V, VGS = -5V - 0.11 -
VGS(th) Gate Threshold Voltage VDS = 1.0V, ID = 34mA
0.70 1.00 1.25 V
IGSS Gate-Source Leakage
Current
V
GS
= 2.4V
- 0.25 1.5
mA
V
GS
= -15V
- 0.1 1.5
RDS(on)
(1)
Drain-Source On-resistance
I
D
= 13A, V
GS
= 3V, T
J
= 25°C
- 0.09 0.15
Ω
I
D
= 13A, V
GS
= 3V, T
J
= 175°C
- 0.29 -
Qg Total Gate Charge
VDS = 600V, ID
= 13A,
VGS = 0V to +3V
- 28 -
nC
Qgs Gate-Source Charge - 9.3 -
ton Turn-on Delay
(Resistive Load)
V
DS
= 600V, I
D
= 13A,
CBP = 33nF, RCL = 110Ω
- 20 -
ns
toff Turn-off Delay
(Resistive Load) - 30 -
tr Rise time (Resistive Load) - 70 -
Ciss
Input Capacitance
VDS = 100V
- 642 -
pF
Coss
Output Capacitance - 69 -
Crss
Reverse Transfer
Capacitance
- 68 -
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
NORMALLY-OFF SILICON
CARBIDE POWER JFET
SML100M12MSF
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8965
Issue
2
Page 3 of
3
MECHANICAL DATA
Dimensions in mm (inches)
TO
258
(TO
-
2
58
A
A
)
Pin 1 – Gate Pin 2 - Source Pin 3 – Drain
