TDA8170
TV VERTICALDEFLECTION OUTPUT CIRCUIT
December 1997
HEPTAWATT
(PlasticPackage)
ORDER CODE : TDA8170
The functionsincorporatedare :
.POWERAMPLIFIER
.FLYBACKGENERATOR
.REFERENCE VOLTAGE
.THERMALPROTECTION
7
6
5
4
3
2
1
Tab connected to Pin 4
OUTPUT STAGE SUPPLY
OUTPUT
GROUND
FLYBACK GENERATOR
SUPPLY VOLTAGE
INVERTING INPUT
REFERENCEVOLTAGE AND NON-INVERTINGINPUT
8170-01.EPS
PIN CONNECTIONS
YOKE
POWER
AMPLIFIER
4
5
7THERMAL
PROTECTION
1
REFERENCE
VOLTAGE
+V
S
236
FLYBACK
GENERATOR
TDA8170
8170-02.EPS
BLOCKDIAGRAM
DESCRIPTION
The TDA8170 is a monolithic integrated circuit in
HEPTAWATTTM package. It is a high efficiency
powerboosterfor directdrivingof verticalwindings
of TV yokes. It is intended for use in Colour and B
&W televisionreceivers aswell as in monitorsand
displays.
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1
5
Q11
Q10 Q12
R5
D4
D5
R4
D3
Q13
Q14
Q9 D6 D7
R6
Q15
R7
Q16
R8 R9
Q17
Q18
Q19
Q22
R11
Q21
Q20 D9
6
2
3
D8
R10
Q7
Q6
Q8
R3
C2
Q4
C1
R2
Q5
R1
D1
Q3
D2
Q1 Q2
7
Q23
Q24
R13
Z1
Q25
4
R16
R19
R12
Z2
Q26
R14
R17
Q27 Q28
Q29
R18R15
8170-03.EPS
SCHEMATIC DIAGRAM
TDA8170
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ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VSSupply Voltage (pin 2) 35 V
V5,V
6Flyback Peak Voltage 60 V
V3Voltage at Pin 3 + Vs
V1,V
7Amplifier Input Voltage + Vs, – 0.5 V
IoOutput PeakCurrent (nonrepetitive, t = 2 msec) 2.5 A
IoOutput PeakCurrent at f = 50 or 60 Hz, t ≤10 µsec 3 A
IoOutput PeakCurrent at f = 50 or 60 Hz, t > 10 µsec 2 A
I3Pin 3 DC Current at V5<V
2100 mA
I3Pin 3 Peak to Peak Flyback Current at f= 50 or 60 Hz, tfly ≤1.5msec 3 A
Ptot Total Power Dissipation at Tcase =90°C20W
T
stg,T
jStorage and Junction Temperature – 40, +150 °C
8170-01.TBL
THERMAL DATA
Symbol Parameter Value Unit
Rth j–case Thermal Resistance Junction-case Max. 3 °C/W
8170-02.TBL
ELECTRICAL CHARACTERISTICS
(refer to the test circuits, VS= 35V, Tamb =25
o
C unlessotherwisespecified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit Fig.
I2Pin 2 Quiescent Current I3=0,I
5=0 8 16 mA 1a
I
6Pin 6 Quiescent Current I3=0,I
5= 0 16 36 mA 1a
I1Amplifier Input Bias Current V1= 1 V – 0.1 – 1 µA1a
V
7Reference Voltage 2.2 V 1a
∆V7
∆VSReference Voltage Drift versus Supply Voltage Vs= 15 to 30 V 1 2 mV/V 1a
V3L Pin 3 Saturation Voltage to GND I3=20mA 1 V 1c
V
5Quiescent Output Voltage Vs=35V,R
a=39k
Ω18 V 1d
Vs=15V,R
a=13kΩ7.5 V 1d
V5L Output SaturationVoltage to GND I5= 1.2 A 1 1.4 V 1c
I5= 0.7 A 0.7 1 V 1c
V5H Output SaturationVoltage to Supply – I5= 1.2 A 1.6 2.2 V 1b
–I
5= 0.7 A 1.3 1.8 V 1b
TjJunction Temperature for Thermal Shut Down 140 °C
8170-03.TBL
TDA8170
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1
2
4
5
6
7
10kΩ
S1 a
b
TDA8170
I6
I2
+VS
V71V
I1
8170-04.EPS
S1 : (a) I2 and I6; (b) I1
Figure 1a : Measurementof I1,I
2
,I
6
,V
7
,
∆V
7
/∆V
S
1
2
4
5
6
1V TDA8170
V5H
-I5
+VS
8170-05.EPS
Figure 1b : Measurementof V5H
1
2
3
4
5
6
3V
S1
a
b
TDA8170
+VS
V5L
I3or I5
V3L
8170-06.EPS
S1 : (a) V3L ; (b) V5L
Figure 1c : Measurementof V3L,V
5L
1
2
4
5
6
2V
5.6kΩ
12kΩTDA8170
Ra
V5
+VS
8170-07.EPS
Figure 1d : Measurementof V5
1
4
5
1N4001
D1
63
2
7
R1
RT1 10kΩ
4.7kΩ
R3 R4
12kΩ8.2kΩC5
2200µF
Iy
R5 Iy
to
Vi
to
GND
IN
to
tfly
V7
TDA8170
C3
220µF
C2
470µF
C1
0.1µF
VS
Ly
24.6mH
C4
0.22µF
R7
1.5ΩR6
330ΩRy
9.6Ω
R5
1Ω
R2
5.6kΩ
C6
4.7µF
C7 1µF
8170-08.EPS
Figure 2 : Application Schematic
TDA8170
4/7
R11
C6
R7
R1
C3
D1
R3
R4
R6
R2
C5
C2
R5
C1 TDA8170
GND YOKE YOKE GND IN
VSV7
VO
()
8170-09.EPS
Figure 3 : PC Boardand Componentlayout of theCircuit of fig.2(1 : 1 scale)
COMPONENTS LIST FOR TYPICALAPPLICATIONS
Component 110 °TVC
5.9 Ω/10 mH
1.95 App
110 °TVC
9.6 Ω/24.6 mH
1.2 App
90 °TVC
15 Ω/30 mH
0.82 App Unit
RT1 10 4.7 10 kΩ
R1 12 10 12 kΩ
R2 10 5.6 5.6 kΩ
R3 27 12 18 kΩ
R4 12 8.2 5.6 kΩ
R5 0.82 1 1 Ω
R6 270 330 330 Ω
R7 1.5 1.5 1.5 Ω
D1 1N 4001 1N 4001 1N 4001 –
C1 0.1 0.1 0.1 µF
C2 eI. 1000/25 V 470/25 V 470/25 V µF
C3 eI. 220/25V 220/25 V 220/25 V µF
C4 0.22 0.22 0.22 µF
C5 eI. 200/25V 2200/25 V 1000/16 V µF
C6 eI. 4.7/16 V 4.7/16 V 10/16 V µF
C7 1.0/16V 1.0/16V 1.0/16V µF
8170-04.TBL
TDA8170
5/7
TYPICALPERFORMANCES
Parameter 110 °TVC
5.9 Ω/10 mH 110 °TVC
9.6 Ω/27 mH 90 °TVC
15 Ω/30 mH Unit
Vs- Supply Voltage 24 22.5 25 V
Is- Current 280 175 125 mA
tfly - FlybackTime 0.6 1 0.7 ms
Ptot - Power Dissip. 4.2 2.5 2.05 W
Rtho-a - Heatsink 7 13 16 °C/W
Tamb 60 60 60 °C
Tj max 110 110 110 °C
To20 20 20 ms
VI2.5 2.5 2.5 Vpp
V72.5 2.5 2.5 Vp
8170-05.TBL
The power dissipated in the circuit must be re-
movedby addingan externalheatsink.
Thanks to the HEPTAWATTTM package attaching
theheatsinkis verysimple,a screwa compression
spring (clip)being sufficient.Betweenthe heatsink
andthepackageit isbettertoinsertalayerofsilicon
grease,to optimizethe thermalcontact;no electri-
cal isolation is needed between the two surfaces.
MOUNTING INSTRUCTIONS
8170-10.EPS
Figure 4 : Mounting Examples
TDA8170
6/7
PM-HEPTV.EPS
PACKAGE MECHANICAL DATA : 7 PINS- PLASTICHEPTAWATT
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsibility
for the consequencesof useof suchinformation nor for anyinfringement of patents or other rights of third parties whichmay result
fromits use. No licenceis granted by implicationor otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as criticalcomponents in life
support devices or systems without expresswritten approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics - AllRights Reserved
Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent.Rights to use these components in a I2C system,is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France- Germany- Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands- Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A.
Dimensions Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.6 08 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 16.97 0.668
L1 14.92 0.587
L2 21.54 0.848
L3 22.62 0.891
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 2.8 0.110
M1 5.08 0.200
Dia. 3.65 3.85 0.144 0.152
HEPTV.TBL
TDA8170
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