IN59Q8 lN6373/lcTE=5, c MPTE-5C thru l-N6389/lCTE-45,-C MPTE-45,. c ,' ZENER OVERVOLTAGE Mosorb devices nentsfrom clamping capability, effective, to protect voltage highly reliable devices MOS SPECIFICATION axial Peak Power leaded package and Bipolar integrated and are numerical business and costcon- machines, applications, circuits. Range -- 5,0 to 200 V -- 1500 Watts Clamp Voltage O Low Leakage< @ Peak Pulse Current 5,0 PA above 10 V Back to Back Versions Available .,$+' ,,,,,~$;: ..s,, ~ ,:;:.>< 9.... ,. ~..>,i*>JiFi. ,> `>,,\>, , .**'*i$!. \ \ ~:$F.., ,..,!7: \ .*V *:~':<i),\ !.,?,,.i~~ !(~ e .,,i$<,}i\, .. .\$,}, *l'@ .,?;~~{,'%ymbol Valua RATINGS Rating Peak Power Dissipation <1$,' $.!l,:t,,.t.> `~.,~,i, **. ~*$>;$\ ;*,:~*+)L "v: ,/,;: `..il: `~w. L\; ~\~...:l,,?k.. i~w `.~.\&sN>,.+ >X ~~),$: ,,,.~, . !~.j, @ 1.0 ms ,0 MAXIMUM impedance exclusive, systems, equipment, compo- FEATURES Voltage O Standard Iowzener and many other industrial/consumer CMOS, O Maximum medical sensitive They have excellent are Motorola's Surmetic controls, supplies O Standard These for use in communication process to protect high surge capability, time, ideally-suited power are designed SUPPRESSOR high voltage, high energy transients. fast response trols, TRANSIENT ~..\.\ ,~:i ,\~>~.,,.-*\;,l?.$\:. (1) ppK !* ,,. :*, y., Steady State Power Dissipation ,~>ii't$.,<'w" @ T L G 75C, Lead Length `k~,@~~,.,k;$ I Units Watts 1500 @ TL G 25C pD Watts 5,0 Derated above TL = 75~{< `q ,$:! ,:$ ~,.., ,'~::?,~~ Forward Surge Current, (@$:'J'~ >:a !.t:,$~ @7A = 25C .,s,..`\\<. Operating and St@f~~~&kperature Lead Tempera$$~@~~)ess ,,,.:. *..,. 200 Amps -65to Oc +175 K'U C,#S,&$$:~)d-free, transfer-molded, AJI external thermosetting surfaces are corrosion plastic Lo resistant and leads are readily solderable and weldable POLARITY: Cathode indicated will be positive with MOUNTING TJ, Tstg mWlC from the case for 10 seconds: 230C CHARACTERISTICS `" ., Range than 1/16" MEc&&&],~rL .'J.,':. ~,~~;s:. \.J.ii,. ~~~: *:.?i, *, I FSM 50 NOTES: POSITION: 1, Nonrepetitive TA = 25C by polarity band. When operated respect to anode Any in zener mode, NOTE: 1. LEAD FINISH ANO DIA UNCONTROLLEDIN AREA "F': Current Pulse per Figure 4 and Derated above per Figure 2. 2, 1/2 Square Wave (or equivalent), PW = 8,3 ms, Duty Cycle = 4 Pulses per minute maximum. CASE 41.11 ,,rmati. i. , ,,s AG-., k A( RA-, -,-I. i". ) MOTOROM INC., 19a2 DS705 B *9-- ,. I ELECTRICAL CHARACTERISTICS Breekdown Voltage Davioe 1N5908 ELECTRICAL ,.-. ,, (TA = 25C unless otherwise noted] VF# VBR (volts) Min @IT (mA) Mexlmum Reverse Strrrrd.Off Voltage VRWMq** [Volta) Maximum Revar6e Leakage @ VRWM iR (gA} 6.0 1.0 6.0 300 CHARACTERISTIC (TA= 25C unlassotharwise 3,5 V mex, IF"'= 100A Maximum Reverse Voltage @ iRSMt= 120A (Clamping Voltage) VRSM [Volta) Clamping Peak Pulse Current @ lpplt= 30A Vcl [Volts max) 8.5 notad)VF#=3.5Vmax, IF'*= Voltage Peak Pulse Current @ lpp2t = G? `%:' v~${?ps;$ ,,:h;y:?$ ........ ... f? ,,$.,>,, . 100 A) (C suffix denotes standard @o~WbP~versions, ,. ,$$ ,.>.:..)i, JEDEC Device Braakdown Voltage VBR @IT volts (mA] Min Davioe Meximum Reveraa Leakage @ VRWM IR [PA) 300 300 25 25 1N6374 1N6362 lcTE-5/MPTE-5 lcTE-5c/MPTE-5c lcTE-8/MPTE-8 lcTE-8c/MPTE-8c 6.0 9.4 9.4 1.0 5,0 "5.0 6.0 6,0 1N6375 1N6383 1N6376 1N6364 lCTE-10/MPTE-10 ICTE-1 OC/MPTE-l OC ICTE-12/MPTE-l 2 ICTE-12C/MPTE-l 2C 11.7 11,7 14,1 14,1 1.0 1.0 1,0 1,0 10 10 12 12 1N6377 1N6385 1N6378 1N6386 ICTE-15/MPTE-l 5 ICTE-15C/MPTE-l 5C ICTE-18/MPTE-l 8 ICTE-16C/MPTE-l 8C 17.6 17,6 21.2 21.2 1.0 1.0 1.0 1,0 15 15 18 18 1N6379 1N6387 1N6380 1N6388 lcTE,22/MPTE-22 lcTE!22c/MPTE-22c ICTE-36<MPTE-26 lCTE-36C/MPTE-36C \ lcTE-45/M~TE-45 lcTE-45c/MPTE-45c 25.9 25.9 42.4 42.4 1,0 1,0 1.0 1,0 1N6373 - 1N6381 1N6389 6.0 Maximum Reveraa Stend-Off Voltage VRWM*** (Volta) 1,0 1.0 1,0 ,.\,. 2~?;.k> ~~ .4. ~'. ? . . ++::*i> ,ij:,:. "%@ ,,. ., ... ,. 1,o~tp:, `3" $:~`~-45 52.9 52.9 q+;$:, ~ 45 .,1,. ~*:,: .,?,, <,13\ ....,.,, ,.?.!_\\,.:l. ! ,*.. ,X! 3, ~?ps .,.x,. ~v*ik!5$$W.,. ,:,,- ..,, :>},, :\$ y,t,,? }.,!!. `?.\, .,,.+.,~ ,. ` ~'>$*. , ,`J'"" ~,s ,,, >+$ ,,$.;. Breakdown Voltage A, .: ..? VgR ,\.::`~,:i) \..t\, ,t~.?y$ .<; volts JEDEC Max Min Nom Qqv?& "%C"" Device `` .,!,.<+\\, 6.12 6.8 7.48 1N6267 ~w$$ 6.~:*' 7,14 6.46 6.S 1N6267A "\ :s,l,,!tfg $~A 8,25 6.75 7.5 1N6268 ~v$ *'~~~K~7.5 7.68 J :BKE7,5A 7.13 7.5 1N6268& , ~@.f$ *$! .*S1 ,5KE82 7.38 9.02 6.2 7,79 8.2 8.61 j N8%$$&" 1.5KE8.2A 10.0 1,5 KE9.1 8.19 9.1 ~y*?@ 9.55 *,@6270A 1,5 KE9.1 A 8.66 9.1 1N6271 1N6271A 1N6272 1N6272A 1,5KE1O 1.5 KEIOA 1.5KE11 1.5KE11A 9.00 9.60 9.90 10.5, m .\ 7 10 10 11 11 MOTOROLA 11 10.5 12.1 11.6 Maximum Reverse Voltage Maximum Raverae 8urge Current lRSMt (Amps) `&~~ulse @ lR8Mt ,,i i@+@rht @ (Clampi~i>.+ ~p;~t = 10 A Volta~~~j ,,;<P Vcl ~ [Volts max) VRS~j*! "" ?" . .. J, :2, ? %p&}v01te9e 160 $:*3T 9.4~$ 160 3:.,<F;$$9%4 100 .s"$: $>:> 15.0 15.0 lgo$t,, j 2,0 4~~* 9q,. 2.0 ~+?l ,:2.0 " ~ "~i:,,,, 70 2 .o<~:a~~:tb ~~ 70 .,., *. , Z*Q>:;,,%;i 60 60 t%~:$~ 50 `,. ~i+ 2.0 50 [vo~~~fi, ~ 7.6 Peek Pulee Current IPP2;;; (Volta max) 7,1 6.1 11.3 11,4 7.5 8.3 11,5 11,6 16,7 16.7 21.2 21.2 13.7 14,1 16.1 16,7 14,1 14,5 16.5 17,1 25.0 25,0 30.0 30,0 20.1 20.8 24,2 24,8 20.6 21.4 25,2 25,5 29,8 30,6 50.6 50,6 32.0 32.0 54.3 54.3 63,3 63,3 70.0 70.0 2,0 2,0 2.0 2.0 40 40 23 23 37.5 37.5 65.2 65,2 2.0 2.0 19 19 78.9 78,9 `" Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (volts) Maximum Temperature Coefficient of VBR [%/"c) Wortirrg Peak Reverse Voltage VRWM (volts) Maximum Reverse Leakage @ VRWM IR [~A) 10 10 10 10 5.50 5,80 6.05 6.40 1000 1000 500 500 139 143 128 132 10,8 10,5 11,7 11.3 0,057 0.057 0,061 0.061 10 10 1.0 1,0 6.63 7.02 7,37 7.78 200 200 50 50 120 124 109 112 12,5 12,1 13.8 13,4 0.065 0.065 0,068 0.066 1.0 1.0 1.0 1,0 8.10 8.55 8,92 9.40 10 10 5.0 5.0 100 103 93,0 96,0 15,0 14.5 16,2 15.6 0,073 0.073 0,075 0.075 @ tT (mA) Maximum Reveraa Surge Current lRSMt (Amps) @ o A Semiconductor Products Inc. ,. * B*-- *ELECTRICAL CHARACTERISTICS (Continued) Maximum Reverse Working Peak Reverse 1.5 KE170 153.0 170 1N6302 1N6302A I,5KE170A .l.5KE180 1.5 KE180A 162.0 162.0 171.0 170 180 160 1N6303 1N6303A 1.5KE200 1.5KE200A 180.0 190.0 200 1N6301 1N6301A 1.0 187.0 179.0 200 198.0 189.0 1.0 1.0 1.0 220.0 210,0 1.0 1.0 Maximum Reverse Voltage Leakage VRWM (volts) @ VRWM iR (YA) Meximum Reverse Surge Voltage @ lRSM `(Clamping Voltage} Current iRSMt (Amps) VRSM (volts) 138.0 145.0 6.2 6.4 244.0 146.0 154.0 5.8 6.1 256,0 246.0 162.0 5.2 5.5 287,0 274,0 171.0 234.0 ,,,, ,,,, .* tSurge Current Waveform per Figure 4 and Derate per Figura 2. `~l.\)\,kY ,,. indicates JEDEC Registered Data. `t$,$ .. **1 /2 Square Equivalent Sine Wave, PW = 8.3 ms, Duty Cycle 4 Pulses per Minute maximum. ,.?~:~,,g ,::~,> s,............ *** ATran~ient Suppressor isnormallyselected according to the maximum reverse stand-off voltage (VRWM), which shoul,~~s<~~ua$to Orgreater than thedc FIGURE 1 - PULSE RATING CURVE TA, AMBIENT TEMPERATURE(C] :Eve ,rsus BREAKDOWN VOLTAGE 1 N6267, A/1.5 KE6.8, A thru 1N6303, A/1.6 KE200, A 1~ II I I II 0 BV, BREAKDOWNVOLTAGE (VOLTSI MOTOROLA I 1 1I I I 0 10 1 1 I I I I 1111 I Ill I I 1111111 100 BV, BREAKOOWNVOLTAGE (VOLTS) Sernjconductor Products Inc. 1 1 1 IU 1 1000 FIGURE 4 - STEADY STATE POWER DERATING TL, LEAOTEMPERATURE 1 N6373, 1 N6389, (oC) ICTE-5, C, MPTE-5, C thru ICTE-45, c, MPTE-45, c " *$:,,,, ,,. @\: J .:/$, J "M : 6 II 10 N 5,0 A ~,j;~ ~ . 1 N6267, 1 N6303, I I I I A/1.5 KE6.8, A thru A/l .5 KE200, A I i 1 1.0 0.3,, 5.0 7.0 10 20 30 AVz, INSTANTANEOUS INCREASE IN Vz ABOVE Vz(Nom} (VOLTS) Motorola reserves the right to make changes to anv products herein to improve reliability, function or design. Motorola does not assume any Iiabilitvarising out of the explication or use of anv product or circuit described herein; neither does it convev any license under its patent rights nor the rights of others, MO~OROLA @ Semiconductor Products Inc. ,-, *ELECTRICAL CHARACTERISTICS (Continued) 0 Breakdown Voltage VBR JEDEC Device 0 Min Max @IT (mA} 1.0 1N6273 1N6273A 1N6274 1N6274A 1.5KE12 1.5 KE12A 1.5KE13 12.4 10,8 11.4 11,7 13 12 12 13 13.7 13.2 12.6 14.3 1.0 1N6275 1N6275A 1N6276 1N6276A 1.5KE15 1.5 KE15A 1.5KE16 1.5 KE16A 13,5 14.3 14,4 15,2 15 15 16 16 16,5 15.8 17,6 16.8 1.0 1N6277 1N6277A 1N6278 1N6278A 1.5KE18 1.5 KE18A 1,5KE20 1,5KE20A 16,2 17,1 18,0 19,0 18 18 19,8 20 20 1.0 1.0 1.0 1N6279 1N6279A 1N6280 1N6280A 1,5KE22 1.5KE22A 1.5KE24 1.5KE24A 19,8 20,9 21,6 22,8 22 22 24 24 24.2 23,1 26,4 1N6281 1N6281A 1N6282 1N6282A 1.5KE27 1.5KE27A 1,5KE30 1.5 KE30A 24.3 25.7 27.0 28.5 27 27 30 30 29,7 1N6283 1N6283A 1N6284 1N6284A 1,5KE33 1.5 KE33A 1,5KE36 1.5KE36A 29.7 31.4 32.4 34.2 33 33 36 36 36.3 34,7 39.6 37.8 1N6285 1N6285A 1N6286 1N6286A 1,5KE39 1.5KE39A 1,5KE43 1,5 KE43A 35.1 37.1 38.7 40.9 39 39 43 43 1N6287 1N6287A 1N6286 1N6266A 1,5KE47 1.5 KE47A 1.5KE51 1.5KE51 A 42.3 44.7 45.9 48.5 47 47, %$f 1N6289 1N6289A 1N6290 1N6290A 1.5KE56 1.5KE56 1.5KE62 1.5KE62A 50.4 5&9$ ,g,@@l,, ~~s" 1N6291 1N6291A 1N6292 1N6292A 1.5KE68 .+$ 1.5KE68A~;> $:{' 1.5 KE74$,''$N.{! 18,9 22.0 21,0 25.2 28.4 33,0 31,5 1.0 1.0 11.1 1.0 1.0 1.0 Maximum Temperature (Volta) Leakege @ VRWM IR (PA) lRSMt {Amps} 9,72 10.2 10.5 5,0 5.0 5.0 5.0 82.0 87.0 90.0 79.0 18.2 12.1 12.8 12.9 13.6 5.0 5.0 5.0 5.0 68.0 71.0 64.0 67.0 17.3 16.7 ~, `&&Q\$d 19.0 ~ ::$.061 `-,~: 0.081 $ `$ ~*F .r.:!~$ ,,. ~+.. 22.6\$"' 0.064 $~++ y$ 0.064 $'Q,@ 0.086 ;: 22'% 0.086 14.5 5,0 5.0 56,~:its M+ 26.5 q::,: `a T)+:p: `$:3 yggg,$ 25.2 29.1 27.7 `37,0 49.0 43,0 45,0 31.9 30.6 34.7 33.2 0.092 0.092 0,094 0,094 :F~"5.0 `"~~5.0 5.0 5.0 38,5 40,0 34.5 36.0 39.1 37.5 43.5 41.4 0,096 0.096 0.097 0.097 31,5 33.0 29,0 0.098 0.098 0.099 0.099 1,0 15.3 16.2 17.1 1.0 1.0 1.0 1.0 17.8 18,8 19.4 20.5 1.0 1.0 1.0 1.0 21,8 23.1 ,,>, #v ., 24.9 `y .$g,~, "~.~, `:J fi$:tb$g~ 1,0 1.0 1.0 Maximum Reve rse Surga 5.0 5.0 5.0 .*a ~,.? 5.0 `%~,,f<, ,$G:B%3+"; ,:? +~$,:j Coaticient Of VB R'i+>?, (%(eq~lt~:: ;$";;+G,:. 0.088 0.088 0.090 0.090 ~1.0 ,$ 30.8 5.0 5.0 5.0 5.0 30,0 47.7 45.7 52.0 49.9 :+~.o ?'% 1,0 31.6 33.3 34.8 36.8 5.0 5.0 5.0 5.0 26,5 28.0 24,0 25,3 56.4 53.9 61.9 59.3 0.100 0.100 0.101 0.101 1,0 1.0 1.0 1.0 38.1 40.2 41,3 43.6 5.0 5.0 5.0 5.0 22.2 23.2 20.4 21.4 67.8 64.8 73.5 70.1 0.101 0.101 0.102 0.102 62 62 61.6 58.8 68.2 65.1 1.0 1.0 1.0 1,0 45.4 47.8 50.2 53.0 5.0 5.0 5.0 5.0 18.6 19.5 16.9 17.7 80.5 77.0 89.0 85.0 0.103 0.103 0.104 0.104 \@T.2 64.6 67.5 71.3 68 68 75 75 74.6 71.4 82.5 78.8 1,0 1.0 55.1 58.1 60.7 64.1 5.0 5,0 5.0 5,0 15.3 16.3 13.9 14.6 98.0 92.0 108.0 103,0 0.104 0.104 0.105 0.105 &$ K@B2A 73.8 77.9 1.$kE9 1 f.5KE91A 81.9 86,5 82 82 91 91 90.2 86.1 100.0 95.50 1.0 1.0 1.0 1.0 66.4 70.1 73.7 77.8 5.0 5,0 5.0 5.0 12.7 13.3 11.4 12.0 118,0 113.0 131,0 125,0 0.105 0.105 0.106 0.106 1.5 KE1OO 1.5 KE1OOA 1.5KE110 1.5 KE11OA 90.0 95.0 99.0 105.0 100 100 110 110 110.0 105.0 121.0 116.0 1.0 ~@$~*A T~~296 1N6296A 1.0 1.0 1.0 81.0 85.5 89.2 94.0 5.0 5,0 5.0 5.0 10.4 11.0 9.5 9.9 144,0 137.0 158,0 152,0 0,106 0.106 0.107 0.107 1N6297 1N6297A 1N6298 1.5 KE120 1.5 KE120A 1.5 KE130 108,0 114.0 117.0 124,0 120 120 130 130 132.0 126.0 143.0 97,2 102.0 105.0 111,0 5,0 5.0 5.0 5.0 8.7 9.1 8.0 8.4 173.0 165,0 187,0 0.107 0,107 0,107 137.0 1.0 1.0 1.0 1.0 179,0 0,107 135,0 143,0 144,0 150 150 160 5.0 5.0 5.0 7.0 7.2 6.5 160 1.0 1.0 1.0 1.0 121,0 128,0 130,0 152.0 165.0 158.0 176.0 168.0 136.0 5,0 6.8 215.0 207.0 230.0 219.0 0,106 0,108 0.108 0,108 1N6293 1N6293A,,CJ 1N6294 y 1N6$&@:~,t $* ~,.<t lN#&$~ " -"- e Device volts Nom Worting Peak Reverse Voltage VRWM Maximum Reverse Voltage @ lRsM (Clampling Voltage) VRSM (volts) 1.5.49$$., , :%;+ 1N6298A 1.5KE1 30A 1N6299 1N6299A 1N6300 1.5 KE150 1.5 KE150A 1.5 KE160 1.5 KE160A 1N6300A ~;5 l~$':h ,P `*$,3$ ,. ,i,g 42,9 41,0 " ~$.%t: ~g5,3 ? ,,,} .$\\., :,5V$F $;$3.4 "56.1 53.6 MOTOROLA ?1,0 1.0 1.0 ::*..\:#.2 `~i+ 29.1 Semiconductor Products Inc. .,, ,. ,' ,, APPLICATION SPECIAL ,, DEVICES Matched sets bidirectional request. NOTES and back-to-back applications Contact configurations can be ordered your nearest Motorola upon for special turn-on time (time required current to full current) tive effect the equipment in Figure representative. in the RESPONSE TIME ., in parallel the transient with Suppressor the equipment device or component to be protected. In this situation, there is a time associated the of the device with capacitance overshoot condition the, device and the inductance The capacitive protection The scheme as shown inductive with the B, Minimizing because it only produces from the operating delay of method. in the parallel in the device external `inductive Proper and placing being protected the main is to clamp excellent range overshoot. response and negligible effects circuit could is very im~~~$nt purPose voltage ~@:i~w~n9 ~f~eg,$~hese time, ,,/~>~&~FYin the ~p-,, .. ind~t%~c~. However, prd~.w$~ unacceptable layoutV;~~~@m the suppressor across as s~own lead lengths d~vlc&$$& close as possible to the equipment or compw~hts to be protected . ..::>.:l ":":;$ mlnl mize this overshoot..<* {,~,.;$ a time delay Some to the clamp to prevent are due to actual the circuit voltage in Figure A. effects have This induc- in the voltage thi,k overshoot since suppressor picosecond and an inductance of the connection effect is of minor importance in, the transition voltage associated devices an overshoot or component application, a transient In most applications, is placed produces for the device to go from zero and lead inductance. dance will input impedan$&~~~rese nted by Zin is essential *:,,t overstre~&l~~$~&protection device. This impe- should beNas'R~tias possible, without restricting ope~~~~~ .?,!.,W , ...e Vin (Transient) n Inductive Effects 1 t FIGURE B t