1N6266A - Motorola / Freescale Semiconductor

●,’

‘“

●

ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR

Mosorb devices are designed to protect voltage sensitive compo-

nentsfrom high voltage, high energy transients. They have excellent

clamping capability, high surge capability, Iowzener impedance and

fast response time, These devices are Motorola’s exclusive, cost-

effective, highly reliable Surmetic axial leaded package and are

ideally-suited for use in communication systems, numerical con-

trols, process controls, medical equipment, business machines,

power supplies and many other industrial/consumer applications,

to protect CMOS, MOS and Bipolar integrated circuits.

SPECIFICATION FEATURES

OStandard Voltage Range —5,0 to 200 V

●Peak Power —1500 Watts @1.0 ms <1$,’

$.!l,:t,,.t.>

OMaximum Clamp Voltage @Peak Pulse Current ‘~.,~,i,

**.

~*$>;$\

OLow Leakage< 5,0 PA above 10 V;*,:~*+)L“v:

,/,;: ‘..il:

OStandard Back to Back Versions Available ‘~w. L\;

~\~...:l,,?k..

i~w

‘.~.\&sN>,.+>X

~~),$:,,,.~,.

!~.j,

.,$+’

,,,,,~$;:

,:;:.><

..s,,~

9.... ,.

~..>,i*>JiFi.

,> ,

‘>,,\>,

.**’*i$!. \

~:$F.., .*V\,..,!7:\

MAXIMUM RATINGS *:~’:<i),\!.,?,,.i~~

!(~.\$,},e

.,,i$<,}i\,..

Rating *l’@

.,?;

~~{,’%ymbol Valua Units

Peak Power Dissipation (1) ~..\.\ ,~:i

,\~>~.,,.

-*\;,l?.$\:. ppK 1500 Watts

@TL G25°C !* ,,.

:*, y.,

Steady State Power Dissipation ,~>ii’t$.,<’w” pD Watts

@T L G75°C, Lead Length ‘k~,@~~,.,k;$ 5,0

Derated above TL =75~{< ‘q 50 mWl°C

~,.., ,$:!

,:$ ,’~::?,~~

Forward Surge Current, (@$:’J’~ IFSM 200 Amps

@7A =25°C >:a !.t:,$~

.,s,..‘\\<.

Operating and St@f~~~&kperature Range TJ, Tstg -65to +175 Oc

Lead Tempera$$~@~~)ess than 1/16“ from the case for 10 seconds: 230°C

,,,.:. *..,.

MEc&&&],~rL CHARACTERISTICS

.’J.,’:.~,~~;s:.\.J.ii,.

C,#S,&$$:~)d-free, transfer-molded, thermosetting plastic

~~~: AJI external surfaces are corrosion resistant and leads are readily solderable

*:.?i, and weldable

POLARITY: Cathode indicated by polarity band. When operated in zener mode,

will be positive with respect to anode

MOUNTING POSITION: Any

NOTES: 1, Nonrepetitive Current Pulse per Figure 4and Derated above

TA =25°C per Figure 2.

2, 1/2 Square Wave (or equivalent), PW =8,3 ms,

Duty Cycle =4Pulses per minute maximum.

,,rmati. i. ,,,s AG-., kA( RA-, -,-I. i“.

IN59Q8

lN6373/lcTE=5,c

MPTE-5C

thru

l-N6389/lCTE-45,-C

MPTE-45,.c

K’U

NOTE:

1. LEAD FINISH ANO DIA

UNCONTROLLEDIN

AREA “F’:

CASE41.11

)MOTOROM INC., 19a2 DS705

B*9--

,, ,.-.

I,.

●ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted] VF# ❑3,5 Vmex, IF”’= 100A

Breekdown Clamping Voltage

Maximum Peak Pulse Peak Pulse

Voltage Mexlmum Reverse Maximum Reverse Voltage Current @Current @

VBR @IT Strrrrd.Off Voltage Revar6e Leakage @iRSMt= 120A lpplt= 30A lpp2t =G? ‘%:’

(volts) (mA) VRWMq** @VRWM (Clamping Voltage) Vcl v~${?ps;$

Davioe Min [Volta) iR (gA} VRSM [Volta) [Volts max) [vo~~~fi,

1N5908 6.0 1.0 6.0 300 ~

8.5 7.6 ,,:h;y:?$

........ ...

ELECTRICAL CHARACTERISTIC (TA= 25°C unlassotharwise notad)VF#=3.5Vmax, IF’*= 100 A) (Csuffix denotes standard @o~WbP~versions,

f? ,,$.,>,, .

,.,$$ . ..

,.>.:..)i, J, :2, ?

Maximum %p&}v01te9e

Maximum Maximum Reverse

Braakdown Reveraa Meximum Raverae Voltage ‘&~~ulse Peek Pulee

Voltage Stend-Off Reveraa 8urge @lR8Mt ,,i i@+@rht @

VBR @IT Current @

Voltage Leakage Current (Clampi~i>.+ ~p;~t =10 AIPP2;;; oA

JEDEC volts (mA] VRWM*** @VRWM lRSMt Volta~~~j ,,;<P Vcl

Device Davioe Min (Volta) IR [PA) (Amps) VRS~j*! ~[Volts max) (Volta max)

1N6373 lcTE-5/MPTE-5 6.0 1,0 5,0 300 160 $:*3T9.4~$ 7,1 7.5

-lcTE-5c/MPTE-5c 6.0 1.0 “5.0 300 160 3:.,<F;$$9%4

1N6374 6.1 8.3

lcTE-8/MPTE-8 9.4 1,0 6.0 25 100 .s”$:$>:> 15.0 11.3 11,5

1N6362 lcTE-8c/MPTE-8c 9.4 1.0 6,0 25 lgo$t,, j15.0 11,4 11,6

1N6375 lCTE-10/MPTE-10 11.7 1.0 10 2,0 4~~* ““ ?“ 16,7 13.7 14,1

1N6383 ICTE-1OC/MPTE-l OC 11,7 1.0 10 2.0 -9q,.

1N6376 16.7

~+?l,: 14,1 14,5

ICTE-12/MPTE-l 214,1 1,0 12 2.0 ~70

“~“i:,,,, 21.2 16.1 16.5

1N6364 ICTE-12C/MPTE-l 2C 14,1 1,0 12 2.o<~:a~~:tb ~~70 21.2 16,7 17,1

.,., *.,

1N6377 ICTE-15/MPTE-l 517.6 1.0 15 Z*Q>:;,,%;i 60 25.0 20.1 20.6

1N6385 ICTE-15C/MPTE-l 5C 17,6 1.0 15 t%~:$~ 60 25,0 20.8 21.4

1N6378 ICTE-18/MPTE-l 821.2 1.0 18 ‘,. 50 30.0 24,2 25,2

1N6386 ICTE-16C/MPTE-l 8C 21.2 1,0 18 ~i+ 2.0 50 30,0 24,8 25,5

,.\,.

1N6379 lcTE,22/MPTE-22 25.9 1,0 2~?;.k> 2,0 40 37.5 ‘“

1N6387 29,8 32.0

lcTE!22c/MPTE-22c 25.9 1,0 ~ ~ .4.

~’..?2,0 40 37.5 30,6 32.0

1N6380 ICTE-36<MPTE-26 42.4 1.0 .++::*i> 2.0 23 65.2 50.6

1,0 ,ij:,:. “%@ 54.3

1N6388 lCTE-36C/MPTE-36C

\42.4 2.0 23 65,2 50,6

,,. .,... ,. 54.3

1N6381 lcTE-45/M~TE-45 52.9 1,o~tp:, $:~‘3” ‘~-45 2.0 19 78.9 63,3 70.0

1N6389 lcTE-45c/MPTE-45c 52.9 q+;$:, ~45 2.0 19 78,9 63,3 70.0

.,1,. ~*:,:

.,?,,<,13\

....,.,,

,.?.!! ,*..

_\\,.:l.

,X! 3, Maximum

~?ps .,.x,.

~v*ik!5$$W.,.

,:,,- ..,, Reverse

:>},, :\$ Wortirrg Maximum Voltage

‘?.\,y,t,,?

}.,!!. .,,.+.,~,.

‘J’””‘~’>$*.

, , Peak Maximum Reveraa @IRSM Maximum

~,s

,,,

>+$ ,,$.;.

A, .: Breakdown Voltage Reverse Reverse Surge (Clamping Temperature

..?

,\.::‘~,:i) VgR @tT Voltage Leakage Current Voltage)

JEDEC Coefficient

\..t\,

,t~.?y$ .<;volts (mA) VRWM @VRWM lRSMt

Device VRSM

Qqv?& “%C”” Min Nom Max of VBR

(volts) IR [~A) (Amps) (volts) [%/”c)

‘‘ .,!,.<+\\,

1N6267 ~w$$ 6.~:*’

“\ 6.12 6.8 7.48 10 5.50 1000 139 10,8

:s,l,,!tfg $~A 0,057

1N6267A 6.46 6.S 7,14 10 5,80 1000 143 10,5

1N6268 ~v$ *’~~~K~7.5 6.75 7.5 0.057

8,25 10 6.05 500 128 11,7 0,061

1N6268& J:BKE7,5A 7.13 7.5 7.68 10 6.40 500 132 11.3 0.061

,~@.f$ *$! .*S1,5KE82 7.38 6.2 9.02 10 6.63 200

jN8%$$&” 1.5KE8.2A 120 12,5 0.065

7,79 8.2 8.61 10 7.02 200 124

~y*?@ 12,1

1,5KE9.1 8.19 9.1 0.065

10.0 1.0 7,37 50 109 13.8

*,@6270A 0,068

1,5KE9.1 A8.66 9.1 9.55 1,0 7.78 50 112 13,4 0.066

1N6271 1,5KE1O 9.00 10 11 1.0 8.10 10 100 15,0

1N6271A 0,073

1.5KEIOA 9.60 10 10.5 1.0 8.55 10 103 14.5

1N6272 1.5KE11 9.90 11 12.1 0.073

1.0 8,92 5.0 93,0 16,2

1N6272A 1.5KE11A 10.5, 11 11.6 0,075

1,0 9.40 5.0 96,0 15.6 0.075

mMOTOROLA Semiconductor Products Inc.

.\ 7

*B*--

*ELECTRICAL CHARACTERISTICS (Continued)

1N6301 1.5 KE170 153.0 170 187.0 1.0

1N6301A I,5KE170A 162.0 170 179.0 1.0

1N6302 .l.5KE180 162.0 180 198.0 1.0

1N6302A 1.5 KE180A 171.0 160 189.0 1.0

1N6303 1.5KE200 180.0 200 220.0 1.0

1N6303A 1.5KE200A 190.0 200 210,0 1.0

tSurge Current Waveform per Figure 4and Derate per Figura 2.

●indicates JEDEC Registered Data.

Working

Peak

Reverse

Voltage

VRWM

(volts)

138.0

145.0

146.0

154.0

162.0

171.0

Maximum

Reverse

Leakage

@VRWM

iR (YA)

Meximum

Reverse

Surge

Current

iRSMt

(Amps)

6.2

6.4

5.8

6.1

5.2

5.5

Maximum

Reverse

Voltage

@lRSM

‘(Clamping

Voltage}

VRSM

(volts)

244.0

234.0

256,0

246.0

287,0

274,0 ,,,,

,,,, .*

‘~l.\)\,kY

,,.

‘t$,$ ..

**1 /2 Square Equivalent Sine Wave, PW =8.3 ms, Duty Cycle ❑4Pulses per Minute maximum. ,.?~:~,,g,::~,>

*** ATran~ient Suppressor isnormallyselected according tothe maximum reverse stand-off voltage (VRWM), which shoul,~~s<~~ua$to Orgreater than thedc

s,............

FIGURE 1 – PULSE RATING CURVE

BV, BREAKDOWNVOLTAGE(VOLTSI

:Eve

TA, AMBIENTTEMPERATURE(°C]

,rsus BREAKDOWN VOLTAGE

1N6267, A/1.5 KE6.8, A

thru

1N6303, A/1.6 KE200, A

1~ 11 1 1 11IU

II II I

II I 11IIll I I III1111

0I I I 1111111

010 100 1000

BV, BREAKOOWNVOLTAGE (VOLTS)

MOTOROLA Sernjconductor Products Inc.

FIGURE 4 – STEADY STATE POWER DERATING

TL, LEAOTEMPERATURE (oC)

“*$:,,,,

1N6373, ICTE-5, C, MPTE-5, C..

~,j;~

thru ,,. ~

@\:

1N6389, ICTE-45, c, MPTE-45, c J .:/$,

J“M III

:10 II I I

65,0 Ai1

1.0

0.3,, 5.0 7.0 10 20 30

1N6267, A/1.5 KE6.8, A

thru

1N6303, A/l .5 KE200, A

AVz, INSTANTANEOUS INCREASE IN Vz ABOVE Vz(Nom} (VOLTS)

Motorola reserves the right to make changes to anv products herein to improve reliability, function or design. Motorola does not assume any Iiabilitvarising

out of the explication or use of anv product or circuit described herein; neither does it convev any license under its patent rights nor the rights of others,

@MO~OROLA Semiconductor Products Inc.

,-,

*ELECTRICAL CHARACTERISTICS (Continued)

JEDEC

Device

1N6273

1N6273A

1N6274

1N6274A

1N6275

1N6275A

1N6276

1N6276A

1N6277

1N6277A

1N6278

1N6278A

1N6279

1N6279A

1N6280

1N6280A

1N6281

1N6281A

1N6282

1N6282A

1N6283

1N6283A

1N6284

1N6284A

1N6285

1N6285A

1N6286

1N6286A

1N6287

1N6287A

1N6286

1N6266A

1N6289

1N6289A

1N6290

1N6290A

1N6291

1N6291A

1N6292

1N6292A

1N6293

1N6293A,,CJ

1N6294 y

1N6$&@:~,t

$*~,.<t

lN#&$~ “-“-

~@$~*A

T~~296

1N6296A

1N6297

1N6297A

1N6298

1N6298A

1N6299

1N6299A

1N6300

1N6300A

Device

1.5KE12

1.5 KE12A

1.5KE13

12.4

1.5KE15

1.5 KE15A

1.5KE16

1.5 KE16A

1.5KE18

1.5 KE18A

1,5KE20

1,5KE20A

1,5KE22

1.5KE22A

1.5KE24

1.5KE24A

1.5KE27

1.5KE27A

1,5KE30

1.5KE30A

1,5KE33

1.5KE33A

1,5KE36

1.5KE36A

1,5KE39

1.5KE39A

1,5KE43

1,5KE43A

1,5KE47

1.5KE47A

1.5KE51

1.5KE51 A

1.5KE56

1.5KE62

1.5KE62A

1.5KE68 .+$

1.5KE68A~;> $:{’

1.5KE74$,’’$N.{!

1.5.49$$.,

,:%;+

&$ K@B2A

1.$kE9 1

f.5KE91A

1.5 KE1OO

1.5 KE1OOA

1.5KE110

1.5 KE11OA

1.5 KE120

1.5 KE120A

1.5 KE130

1.5KE1 30A

1.5 KE150

1.5 KE150A

1.5 KE160

1.5 KE160A

Min

10,8

11.4

11,7

13,5

14.3

14,4

15,2

16,2

17,1

18,0

19,0

19,8

20,9

21,6

22,8

24.3

25.7

27.0

28.5

29.7

31.4

32.4

34.2

35.1

37.1

38.7

40.9

42.3

44.7

45.9

48.5

50.4

5&9$

,g,@@l,,

~~s”

\@T.2

64.6

67.5

71.3

73.8

77.9

81.9

86,5

90.0

95.0

99.0

105.0

108,0

114.0

117.0

124,0

135,0

143,0

144,0

152.0

Breakdown Voltage

VBR

volts

Nom

13.7

47, %$f

~;5l~$’:h

,P‘*$,3$

,i,g

100

110

120

130

150

160

Max

13.2

12.6

14.3

1.0

16,5

15.8

17,6

16.8

19,8

18,9

22.0

21,0

24.2

23,1

26,4

25.2

29,7

28.4

33,0

31,5

36.3

34,7

39.6

37.8

42,9

41,0 “

~$.%t:

~g5,3 ?

,,,} .$\\.,

:,5V$F

$;$3.4

“56.1

53.6

61.6

58.8

68.2

65.1

74.6

71.4

82.5

78.8

90.2

86.1

100.0

95.50

110.0

105.0

121.0

116.0

132.0

126.0

143.0

137.0

165.0

158.0

176.0

168.0

@IT

(mA}

1.0

11.1

1.0

1,0

1.0

1,0

1.0

~1.0 ,$

:+~.o

?’%

?1,0

1,0

1.0

1,0

1.0

Worting

Peak

Reverse

Voltage

VRWM

(Volta)

9,72

10.2

10.5

5,0

12.1

12.8

12.9

13.6

14.5

15.3

16.2

17.1

17.8

18,8

19.4

20.5

21,8

23.1 #v

,,>,.,

24.9 ‘y

.$g,~,

“~.~, ‘:J

fi$:tb$g~

::*..\:#.2

‘~i+29.1

30.8

31.6

33.3

34.8

36.8

38.1

40.2

41,3

43.6

45.4

47.8

50.2

53.0

55.1

58.1

60.7

64.1

66.4

70.1

73.7

77.8

81.0

85.5

89.2

94.0

97,2

102.0

105.0

111,0

121,0

128,0

130,0

136.0

Leakege

@VRWM

IR (PA)

5.0

82.0

5.0

5,0

5.0

5.0 .*a

~,.?

5.0 ‘%~,,f<,

,$G:B%3+”;

,:? +~$,:j

:F~”5.0

‘“~~5.0

5.0

5,0

5.0

5,0

5.0

5,0

5.0

5,0

5.0

5,0

5.0

5,0

Maximum

Reve rse

Surga

lRSMt

{Amps}

87.0

90.0

79.0

18.2

68.0

71.0

64.0

67.0

56,~:its

q::,:

‘a T)+:p:

‘$:3

yggg,$

‘37,0

49.0

43,0

45,0

38,5

40,0

34.5

36.0

31,5

33.0

29,0

30,0

26,5

28.0

24,0

25,3

22.2

23.2

20.4

21.4

18.6

19.5

16.9

17.7

15.3

16.3

13.9

14.6

12.7

13.3

11.4

12.0

10.4

11.0

9.5

9.9

8.7

9.1

8.0

8.4

7.0

7.2

6.5

6.8

Maximum

Reverse

Voltage

@lRsM

(Clampling

Voltage)

VRSM

(volts)

17.3

16.7

19.0 ~

0.081 $‘$

.r.:!~$,,.

22.6\$”’

$~++ y$

$’Q,@

;: 22’%

M+ 26.5

25.2

29.1

27.7

31.9

30.6

34.7

33.2

39.1

37.5

43.5

41.4

47.7

45.7

52.0

49.9

56.4

53.9

61.9

59.3

67.8

64.8

73.5

70.1

80.5

77.0

89.0

85.0

98.0

92.0

108.0

103,0

118,0

113.0

131,0

125,0

144,0

137.0

158,0

152,0

173.0

165,0

187,0

179,0

215.0

207.0

230.0

219.0

Maximum

Temperature

Coaticient

Of VB R’i+>?,

(%(eq~lt~::

;$”;;+G,:.

~, ‘&&Q\$d

::$.061

~‘-,~:

~+.. 0.064

0.064

0.086

0.088

0.090

0.092

0,094

0,096

0.096

0.097

0.098

0.099

0.100

0.101

0.102

0.103

0.104

0.105

0.106

0,106

0.106

0.107

0,107

0,106

0,108

0.108

0,108

MOTOROLA Semiconductor Products Inc.

.,,

,’

APPLICATION NOTES

SPECIAL DEVICES

Matched sets and back-to-back configurations for

bidirectional applications can be ordered upon special

request. Contact your nearest Motorola representative.

RESPONSE TIME

In most applications, the transient Suppressor device

is placed in parallel with the equipment or component

to be protected. In this situation, there is atime delay

associated with the capacitance of the device and an

overshoot condition associated with the inductance of

the, device and the inductance of the connection method.

The capacitive effect is of minor importance in the parallel

protection scheme because it only produces atime delay

in, the transition from the operating voltage to the clamp

voltage as shown in Figure A.

The inductive effects in the device are due to actual

turn-on time (time required for the device to go from zero

current to full current) and lead inductance. This induc-

tive effect produces an overshoot in the voltage across

the equipment or component being protected as s~own

in Figure B, Minimizing thi,k overshoot is very im~~~$nt

in the application, since the main purPose ~@:i~w~n9

atransient suppressor is to clamp voltage ~f~eg,$~hese

devices have excellent response time, ,,/~>~&~FYin the

~p-,,..

picosecond range and negligible ind~t%~c~. However,

external ‘inductive effects could prd~.w$~ unacceptable

overshoot. Proper circuit layoutV;~~~@m lead lengths

and placing the suppressor d~vlc&$$& close as possible

to the equipment or compw~hts to be protected will

...::>.:l “:“:;$

mlnl mize this overshoot..<* {,~,.;$

Some input impedan$&~~~rese nted by Zin is essential

*:,,t

to prevent overstre~&l~~$~&protection device. This impe-

dance should beNas’R~tias possible, without restricting

the circuit ope~~~~~

.?,!.,W,...e

Vin (Transient)

Inductive Effects

FIGURE Bt