Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1700 V TC = 80 C IC,nom. 400 A TC = 25 C IC 800 A Periodischer Kollektor Spitzenstrom repetitive peak collctor current tP = 1 ms, TC=80C ICRM 800 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 3120 W VGES +/- 20V V IF 400 A IFRM 800 A 2 It 45.000 A2s VISOL 3,4 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tp = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 2,6 3,2 V - 3,1 3,6 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 400A, VGE = 15V, Tvj = 25C VCE sat IC = 400A, VGE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 18mA, VCE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V ... +15V QG - 5,0 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 29 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - 1,3 - nF VCE = 1700V, VGE = 0V, Tvj = 25C ICES - 0,1 1 mA - 12 - - Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1700V, VGE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C prepared by: Regine Mallwitz date of publication: 28.11.2000 approved by: Christoph Lubke; 28.11.2000 revision: 2 (Series) 1(8) IGES mA 200 BSM400GA170DLC nA Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC Charakteristische Werte / Characteristic values min. typ. max. - 0,1 - s - 0,1 - s - 0,1 - s - 0,1 - s - 0,8 - s - 0,9 - s - 0,03 - s - 0,03 - s Eon - 170 - mWs Eoff - 135 - mWs ISC - 1600 - A LsCE - 15 - nH RCC'+EE' - 0,5 - m min. typ. max. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 400A, VCE = 900V VGE = 15V, RG = 3,9, Tvj = 25C td,on VGE = 15V, RG = 3,9, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 400A, VCE = 900V VGE = 15V, RG = 3,9, Tvj = 25C tr VGE = 15V, RG = 3,9, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 400A, VCE = 900V VGE = 15V, RG = 3,9, Tvj = 25C td,off VGE = 15V, RG = 3,9, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 400A, VCE = 900V VGE = 15V, RG = 3,9, Tvj = 25C tf VGE = 15V, RG = 3,9, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data IC = 400A, VCE = 900V, VGE = 15V RG = 3,9, Tvj = 125C, LS = 60nH IC = 400A, VCE = 900V, VGE = 15V RG = 3,9, Tvj = 125C, LS = 60nH tP 10sec, VGE 15V, RG = 3,9 TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip pro Zweig / per arm Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF = 400A, VGE = 0V, Tvj = 25C VF IF = 400A, VGE = 0V, Tvj = 125C Ruckstromspitze peak reverse recovery current IF = 400A, - diF/dt = 4000A/sec Sperrverzogerungsladung recovered charge IF = 400A, - diF/dt = 4000A/sec Abschaltenergie pro Puls reverse recovery energy IF = 400A, - diF/dt = 4000A/sec VR = 900V, VGE = -10V, Tvj = 25C IRM VR = 900V, VGE = -10V, Tvj = 125C VR = 900V, VGE = -10V, Tvj = 25C Qr VR = 900V, VGE = -10V, Tvj = 125C VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C 2(8) Erec - 2,1 2,5 V - 2,1 2,5 V - 430 - A - 500 - A - 125 - As - 200 - As - 60 - mWs - 110 - mWs BSM400GA170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC Thermische Eigenschaften / Thermal properties min. typ. - - 0,04 K/W - - 0,075 K/W RthCK - - 0,012 K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Transistor / transistor, DC Innerer Warmewiderstand thermal resistance, junction to case Diode/Diode, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per Module dPaste 50m / dgrease 50m RthJC max. Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index max. 5 terminals M4 max. 2 terminals M6 max. 5 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight G Nm Nm 420 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) BSM400GA170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 800 700 IC [A] 600 500 400 300 Tj = 25C Tj = 125C 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) Tvj = 125C 800 700 VGE = 19V VGE = 15V 600 VGE = 13V IC [A] VGE = 11V VGE = 9V 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] 4(8) BSM400GA170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 800 700 Tj = 25C Tj = 125C IC [A] 600 500 400 300 200 100 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (VF) 800 700 Tj = 25C Tj = 125C IF [A] 600 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) BSM400GA170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC Schaltverluste (typisch) Eon = f (IC) , E off = f (IC) , E rec = f (IC) Rgon = Rgoff =3,9, VCE = 900V, Tj = 125C Switching losses (typical) 700 600 Eoff Eon Erec E [mJ] 500 400 300 200 100 0 0 100 200 300 400 500 600 700 800 IC [A] Schaltverluste (typisch) Switching losses (typical) E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 400A , VCE = 900V , Tj = 125C 400 Eoff 350 Eon Erec 300 E [mJ] 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20 RG [] 6(8) BSM400GA170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 1 ZthJC [K / W] 0,1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] 1 2 4 4,46 12,91 19,24 3,39 0,0047 0,0356 0,0613 0,4669 ri [K/kW] : Diode 13,96 27,66 27,66 5,73 0,0062 0,0473 0,0473 0,2322 i [sec] : Diode Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) IC [A] 3 i ri [K/kW] : IGBT i [sec] : IGBT 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 Rg = 3,9 Ohm, T vj= 125C IC,Modul IC,Chip 0 200 400 600 800 1000 1200 1400 1600 1800 VCE [V] 7(8) BSM400GA170DLC Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 400 GA 170 DLC 8(8) BSM400GA170DLC Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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