TZM-Series Vishay Semiconductors Small Signal Zener Diodes Features * * * * * * * * Very sharp reverse characteristic Low reverse current level Very high stability Low noise TZMC - VZ-tolerance 5 % TZMB - VZ-tolerance 2 % AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17205 Applications * Voltage stabilization Mechanical Data Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS08/2.5K per 7" reel (8 mm tape), 12.5K/box GS18/10K per 13" reel (8 mm tape), 10K/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Power dissipation Test condition Symbol Value Unit RthJA 300 K/W Ptot 500 mW IZ Ptot/VZ mA Z-current Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Test condition Symbol Value Unit On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Tj 175 C Tstg - 65 to + 175 C Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Document Number 84122 Test condition Symbol IF = 200 mA VF Min. Typ. Max. Unit 1.5 V www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Apr-11 TZM-Series Vishay Semiconductors Electrical Characteristics Zener voltage range Part number Dynamic resistance rzjT at IZT VZ at IZT Test current Reverse leakage current Temperature coefficient of zener voltage TKVZ rzjK at IZK IZT IZK IR IR 1) at VR mA mA A A V V V min. max. typ . typ. TZMC2V4 2.28 2.56 < 85 < 600 5 1 < 50 < 100 1 - 0.09 - 0.06 TZMC2V7 2.5 2.9 < 85 < 600 5 1 < 10 < 50 1 - 0.09 - 0.06 TZMC3V0 2.8 3.2 < 90 < 600 5 1 <4 < 40 1 - 0.08 - 0.05 TZMC3V3 3.1 3.5 < 90 < 600 5 1 <2 < 40 1 - 0.08 - 0.05 TZMC3V6 3.4 3.8 < 90 < 600 5 1 <2 < 40 1 - 0.08 - 0.05 TZMC3V9 3.7 4.1 < 90 < 600 5 1 <2 < 40 1 - 0.08 - 0.05 TZMC4V3 4 4.6 < 90 < 600 5 1 <1 < 20 1 - 0.06 - 0.03 TZMC4V7 4.4 5 < 80 < 600 5 1 < 0.5 < 10 1 - 0.05 0.02 TZMC5V1 4.8 5.4 < 60 < 550 5 1 < 0.1 <2 1 - 0.02 0.02 TZMC5V6 5.2 6 < 40 < 450 5 1 < 0.1 <2 1 - 0.05 0.05 %/K %/K min. max. TZMC6V2 5.8 6.6 < 10 < 200 5 1 < 0.1 <2 2 0.03 0.06 TZMC6V8 6.4 7.2 <8 < 150 5 1 < 0.1 <2 3 0.03 0.07 TZMC7V5 7 7.9 <7 < 50 5 1 < 0.1 <2 5 0.03 0.07 TZMC8V2 7.7 8.7 <7 < 50 5 1 < 0.1 <2 6.2 0.03 0.08 TZMC9V1 8.5 9.6 < 10 < 50 5 1 < 0.1 <2 6.8 0.03 0.09 TZMC10 9.4 10.6 < 15 < 70 5 1 < 0.1 <2 7.5 0.03 0.1 TZMC11 10.4 11.6 < 20 < 70 5 1 < 0.1 <2 8.2 0.03 0.11 TZMC12 11.4 12.7 < 20 < 90 5 1 < 0.1 <2 9.1 0.03 0.11 TZMC13 12.4 14.1 < 26 < 110 5 1 < 0.1 <2 10 0.03 0.11 TZMC15 13.8 15.6 < 30 < 110 5 1 < 0.1 <2 11 0.03 0.11 TZMC16 15.3 17.1 < 40 < 170 5 1 < 0.1 <2 12 0.03 0.11 TZMC18 16.8 19.1 < 50 < 170 5 1 < 0.1 <2 13 0.03 0.11 TZMC20 18.8 21.2 < 55 < 220 5 1 < 0.1 <2 15 0.03 0.11 TZMC22 20.8 23.3 < 55 < 220 5 1 < 0.1 <2 16 0.04 0.12 TZMC24 22.8 25.6 < 80 < 220 5 1 < 0.1 <2 18 0.04 0,12 TZMC27 25.1 28.9 < 80 < 220 5 1 < 0.1 <2 20 0.04 0.12 TZMC30 28 32 < 80 < 220 5 1 < 0.1 <2 22 0.04 0.12 TZMC33 31 35 < 80 < 220 5 1 < 0.1 <2 24 0.04 0.12 TZMC36 34 38 < 80 < 220 5 1 < 0.1 <2 27 0.04 0.12 TZMC39 37 41 < 90 < 500 2.5 0.5 < 0.1 <5 30 0.04 0.12 TZMC43 40 46 < 90 < 600 2.5 0.5 < 0.1 <5 33 0.04 0.12 TZMC47 44 50 < 110 < 700 2.5 0.5 < 0.1 <5 36 0.04 0.12 TZMC51 48 54 < 125 < 700 2.5 0.5 < 0.1 < 10 39 0.04 0.12 TZMC56 52 60 < 135 < 1000 2.5 0.5 < 0.1 < 10 43 0.04 0.12 TZMC62 58 66 < 150 < 1000 2.5 0.5 < 0.1 < 10 47 0.04 0.12 TZMC68 64 72 < 200 < 1000 2.5 0.5 < 0.1 < 10 51 0.04 0.12 TZMC75 70 79 < 250 < 1500 2.5 0.5 < 0.1 < 10 56 0.04 0.12 Note: Additional measurement of voltage group TZMC9V1 to TZMC75, IR at 95 % VZmin 35 nA at Tj = 25 C 1) at T = 150 C j Document Number 84122 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Apr-11 TZM-Series Vishay Semiconductors Electrical Characteristics Zener voltage range Part number Dynamic resistance rzjT at IZT VZ at IZT Test current Reverse leakage current Temperature coefficient of zener voltage TKVZ rzjK at IZK IZT IZK IR IR 1) at VR mA mA A A V V V min. max. typ. typ . TZMB2V4 2.35 2.45 < 85 < 600 5 1 < 50 < 100 1 - 0.09 - 0.06 TZMB2V7 2.64 2.76 < 85 < 600 5 1 < 10 < 50 1 - 0.09 - 0.06 TZMB3V0 2.94 3.06 < 90 < 600 5 1 <4 < 40 1 - 0.08 - 0.05 TZMB3V3 3.24 3.36 < 90 < 600 5 1 <2 < 40 1 - 0.08 - 0.05 TZMB3V6 3.52 3.68 < 90 < 600 5 1 <2 < 40 1 - 0.08 - 0.05 TZMB3V9 3.82 3.98 < 90 < 600 5 1 <2 < 40 1 - 0.08 - 0.05 TZMB4V3 4.22 4.38 < 90 < 600 5 1 <1 < 20 1 - 0.06 -0.03 TZMB4V7 4.6 4.8 < 80 < 600 5 1 < 0.5 < 10 1 - 0.05 0.02 TZMB5V1 5 5.2 < 60 < 550 5 1 < 0.1 <2 1 - 0.02 0.02 TZMB5V6 5.48 5.72 < 40 < 450 5 1 < 0.1 <2 1 - 0.05 0.05 TZMB6V2 6.08 6.32 < 10 < 200 5 1 < 0.1 <2 2 0.03 0.06 TZMB6V8 6.66 6.94 <8 < 150 5 1 < 0.1 <2 3 0.03 0.07 TZMB7V5 7.35 7.65 <7 < 50 5 1 < 0.1 <2 5 0.03 0.07 TZMB8V2 8.04 8.36 <7 < 50 5 1 < 0.1 <2 6.2 0.03 0.08 TZMB9V1 8.92 9.28 < 10 < 50 5 1 < 0.1 <2 6.8 0.03 0.09 TZMB10 9.8 10.2 < 15 < 70 5 1 < 0.1 <2 7.5 0.03 0.1 TZMB11 10.78 11.22 < 20 < 70 5 1 < 0.1 <2 8.2 0.03 0.11 TZMB12 11.76 12.24 < 20 < 90 5 1 < 0.1 <2 9.1 0.03 0.11 TZMB13 12.74 13.26 < 26 < 110 5 1 < 0.1 <2 10 0.03 0.11 TZMB15 14.7 15.3 < 30 < 110 5 1 < 0.1 <2 11 0.03 0.11 0.11 %/K %/K min. max. TZMB16 15.7 16.3 < 40 < 170 5 1 < 0.1 <2 12 0.03 TZMB18 17.64 18.36 < 50 < 170 5 1 < 0.1 <2 13 0.03 0.11 TZMB20 19.6 20.4 < 55 < 220 5 1 < 0.1 <2 15 0.03 0.11 TZMB22 21.55 22.45 < 55 < 220 5 1 < 0.1 <2 16 0.04 0.12 TZMB24 23.5 24.5 < 80 < 220 5 1 < 0.1 <2 18 0.04 0,12 TZMB27 26.4 27.6 < 80 < 220 5 1 < 0.1 <2 20 0.04 0.12 TZMB30 29.4 30.6 < 80 < 220 5 1 < 0.1 <2 22 0.04 0.12 TZMB33 32.4 33.6 < 80 < 220 5 1 < 0.1 <2 24 0.04 0.12 TZMB36 35.3 36.7 < 80 < 220 5 1 < 0.1 <2 27 0.04 0.12 TZMB39 38.2 39.8 < 90 < 500 2.5 1 < 0.1 <5 30 0.04 0.12 TZMB43 42.1 43.9 < 90 < 600 2.5 0.5 < 0.1 <5 33 0.04 0.12 TZMB47 46.1 47.9 < 110 < 700 2.5 0.5 < 0.1 <5 36 0.04 0.12 TZMB51 50 52 < 125 < 700 2.5 0.5 < 0.1 < 10 39 0.04 0.12 TZMB56 54.9 57.1 < 135 < 1000 2.5 0.5 < 0.1 < 10 43 0.04 0.12 TZMB62 60.8 63.2 < 150 < 1000 2.5 0.5 < 0.1 < 10 47 0.04 0.12 TZMB68 66.6 69.4 < 200 < 1000 2.5 0.5 < 0.1 < 10 51 0.04 0.12 TZMB75 73.5 76.5 < 250 < 1500 2.5 0.5 < 0.1 < 10 56 0.04 0.12 Note: Additional measurement of voltage group TZMB9V1 to TZMB75, IR at 95 % VZmin 35 nA at Tj = 25 C 1) at T = 150 C j Document Number 84122 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Apr-11 TZM-Series Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified 15 TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) 600 500 400 300 200 100 0 5 IZ = 5 mA 0 -5 80 120 160 200 40 Tamb - Ambient Temperature (C) 0 95 9602 Figure 1. Total Power Dissipation vs. Ambient Temperature 0 20 30 40 50 VZ - Z-Voltage (V) Figure 4. Temperature Coefficient of VZ vs. Z-Voltage CD - Diode Capacitance (pF) 200 Tj = 25 C 100 IZ = 5 mA 10 150 VR = 2 V Tj = 25 C 100 50 0 1 0 10 5 15 25 20 VZ - Z-Voltage (V) 95 9598 0 5 10 15 20 25 VZ - Z-Voltage (V) 95 9601 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb = 25C Figure 5. Diode Capacitance vs. Z-Voltage 1.3 100 VZtn = VZt/VZ (25 C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10 /K -4 2 x 10-4/K 0 1.0 - 2 x 10-4/K - 4 x 10-4/K 0.9 0.8 0 - 60 95 9599 60 120 180 240 Tj - Junction Temperature (C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature Document Number 84122 IF - Forward Current (mA) VZtn - Relative Voltage Change 10 95 9600 1000 VZ - Voltage Change (mV) 10 10 Tj = 25 C 1 0.1 0.01 0.001 0 95 9605 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Apr-11 TZM-Series Vishay Semiconductors 1000 rZ - Differential Z-Resistance () 100 IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 C 60 40 20 0 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 C 1 0 4 6 12 8 20 5 0 VZ - Z-Voltage (V) 95 9604 Figure 7. Z-Current vs. Z-Voltage 10 15 20 25 VZ - Z-Voltage (V) 95 9606 Figure 9. Differential Z-Resistance vs. Z-Voltage 50 Ptot = 500 mW Tamb = 25 C IZ - Z-Current (mA) 40 30 20 10 0 15 20 25 35 30 VZ - Z-Voltage (V) 95 9607 Zthp - Thermal Resistance for Pulse Cond. (KW) Figure 8. Z-Current vs. Z-Voltage 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse RthJA = 300 K/W T = Tjmax - Tamb 10 tp/T = 0.01 tp/T = 0.1 tp/T = 0.02 tp/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 tp - Pulse Length (ms) 102 95 9603 Figure 10. Thermal Response Document Number 84122 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Apr-11 TZM-Series Vishay Semiconductors Package Dimensions in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 1.25 (0.49) min. 2 (0.079) min. 2.5 (0.098) max. 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 84122 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 6 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.5, 19-Apr-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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