AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS Package Type AUIRFP4310Z TO-247AC 100V RDS(on) typ. max. 4.8m ID (Silicon Limited) 6.0m 128A ID (Package Limited) 120A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Base Part Number AUIRFP4310Z Form Tube GD S TO-247AC G D S Gate Drain Source Standard Pack Quantity 25 Orderable Part Number AUIRFP4310Z Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 90 120 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 480 278 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA Units 128 A W 1.9 20 355 See Fig.14,15, 22a, 22b 17 -55 to + 175 W/C V mJ A mJ V/ns C 300 10 lbf*in (1.1N*m) Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient --- 0.24 --- 0.54 --- 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-29 AUIRFP4310Z Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units 100 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.11 --- V/C Reference to 25C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance --- 4.8 6.0 m VGS = 10V, ID = 77A VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 150A gfs Forward Trans conductance Drain-to-Source Leakage Current --- --- --- 20 S IDSS 169 --- VDS = 50V, ID = 77A VDS =100 V, VGS = 0V --- --- 250 --- --- --- --- --- 0.7 100 -100 --- V(BR)DSS Drain-to-Source Breakdown Voltage Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG V A nA Conditions VGS = 0V, ID = 250A VDS =100V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time --- --- --- --- --- --- 125 32 37 88 22 81 188 --- --- --- --- --- ID = 77A VDS = 50V nC VGS = 10V td(off) Turn-Off Delay Time --- 58 --- tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) --- --- --- --- 83 7120 490 250 --- --- --- --- RG= 2.7 VGS = 10V --- 540 --- VGS = 0V, VDS = 0V to 80V --- 705 --- VGS = 0V, VDS = 0V to 80V Min. Typ. Max. Units --- --- 128 Coss eff.(ER) Coss eff.(TR) Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ns pF A --- --- 480 --- --- 1.3 --- --- --- --- --- 49 57 102 133 3.7 --- --- --- --- --- V VDD = 65V ID = 77A VGS = 0V VDS = 50V = 1.0MHz Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C,IS = 77A,VGS = 0V TJ = 25C VDD = 85V TJ = 125C IF = 77A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C ns Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.120mH, RG = 50, IAS = 77A, VGS =10V. Part not recommended for use above this value. ISD 77A, di/dt 1505A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C. 2 2015-9-29 AUIRFP4310Z 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 4.5V 10 100 BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 1 1 0.1 1 10 0.1 100 1 Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 100 2.8 1000 100 TJ = 175C TJ = 25C 10 VDS = 50V 60s PULSE WIDTH ID = 77A VGS = 10V 2.3 1.8 1.3 0.8 0.3 1.0 2 3 4 5 6 7 -60 8 -20 VGS, Gate-to-Source Voltage (V) C oss = C ds + C gd Ciss Coss 1000 100 140 180 14 VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED C rss = C gd 10000 60 Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 100000 20 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Crss 100 ID = 77A 12 VDS= 80V VDS= 50V VDS= 20V 10 8 6 4 2 0 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 4.5V 0 20 40 60 80 100 120 140 160 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-9-29 AUIRFP4310Z OPERATION IN THIS AREA LIMITED BY R (on) DS 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175C 100 10 TJ = 25C 1 VGS = 0V 100sec 100 10 10msec 1 Tc = 25C Tj = 175C Single Pulse 0.1 0.4 0.7 1.0 1.3 1.6 1.9 0.1 2.2 140 Limited by package ID, Drain Current (A) 120 100 80 60 40 20 0 50 75 100 125 150 10 100 Fig 8. Maximum Safe Operating Area V(BR)DSS, Drain-to-Source Breakdown Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 25 1 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 130 Id = 5.0mA 120 110 100 90 -60 175 -20 20 60 100 140 180 TJ , Temperature ( C ) TC , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 1600 EAS , Single Pulse Avalanche Energy (mJ) 2.5 2.0 Energy (J) DC 0.1 0.1 1.5 1.0 0.5 ID 15A 28A BOTTOM 77A 1400 TOP 1200 1000 800 600 400 200 0 0.0 0 25 50 75 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 1msec Limited by Package 100 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2015-9-29 AUIRFP4310Z Thermal Response ( ZthJC ) C/W 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 100 0.01 0.05 0.10 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width 400 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 77A EAR , Avalanche Energy (mJ) 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 2015-9-29 4.5 35 4.0 30 IF = 51A VR = 85V 3.5 25 TJ = 25C TJ = 125C 3.0 20 IRRM (A) VGS(th), Gate threshold Voltage (V) AUIRFP4310Z 2.5 2.0 10 ID = 150A ID = 250A ID = 1.0mA ID = 1.0A 1.5 15 5 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 TJ , Temperature ( C ) 600 800 1000 diF /dt (A/s) Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt 35 800 700 600 500 IF = 51A VR = 85V 30 IF = 77A VR = 85V TJ = 25C TJ = 125C 25 TJ = 25C TJ = 125C IRRM (A) QRR (nC) 400 400 20 15 300 10 200 5 100 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/s) diF /dt (A/s) Fig. 19 - Typical Recovery Current vs. dif/dt Fig. 18 - Typical Stored Charge vs. dif/dt 900 IF = 77A VR = 85V 800 700 TJ = 25C TJ = 125C QRR (nC) 600 500 400 300 200 100 0 0 200 400 600 800 1000 diF /dt (A/s) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2015-9-29 AUIRFP4310Z Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit I AS Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 24b. Gate Charge Waveform 2015-9-29 AUIRFP4310Z TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Part Number AUFP4310Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code TO-247AC package is not recommended for Surface Mount Application. 8 2015-9-29 AUIRFP4310Z Qualification Information Qualification Level Moisture Sensitivity Level Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247AC N/A Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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